April 2004 AS7C3256A

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Briana Benson
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1 pril 2004 S7C V 32K X 8 CMOS SRM (Common I/O) Features Pin compatible with S7C3256 Industrial and commercial temperature options Organization: 32,768 words 8 bits High speed - 10/12/15/20 ns address access time - 5, 6, 7, 8 ns output enable access time Very low power consumption: CTIVE - 180mW 10 ns Very low power consumption: STNDBY mw max CMOS I/O Easy memory expansion with and OE inputs TTL-compatible, three-state I/O 28-pin JEDEC standard packages mil SOJ mm TSOP 1 ESD protection 2000 volts Latch-up current 200 m Logic block diagram Pin arrangement V CC 28-pin TSOP 1 ( mm) 28-pin SOJ (300 mil) Row decoder 8 9 Input buffer 256 X 128 X 8 rray (262,144) Column decoder Sense amp Control circuit I/O7 I/O0 OE OE V CC S7C I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O I/O0 I/O1 I/O S7C V CC OE 10 I/O7 I/O6 I/O5 I/O4 I/O3 Selection guide Unit Maximum address access time ns Maximum output enable access time ns Maximum operating current m Maximum CMOS standby current m 4/23/04; v.2.0 lliance Semiconductor P. 1 of 9 Copyright lliance Semiconductor. ll rights reserved.

2 S7C3256 Functional description The S7C3256 is a 3.3V high-performance CMOS 262,144-bit Static Random-ccess Memory (SRM) device organized as 32,768 words 8 bits. It is designed for memory applications requiring fast data access at low voltage, including Pentium TM, PowerPC TM, and portable computing. lliance s advanced circuit design and process techniques permit 3.3V operation without sacrificing performance or operating margins. The device enters standby mode when is high. CMOS standby mode consumes 7.2 mw. Normal operation offers 75% power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode. Equal address access and cycle times (t, t RC, t WC ) of 10/12/15/20 ns with output enable access times (t OE ) of 5, 6, 7, 8 ns are ideal for high-performance applications. The chip enable () input permits easy memory expansion with multiple-bank memory organizations. write cycle is accomplished by asserting chip enable () and write enable () LOW. Data on the input pins I/O0-I/O7 is written on the rising edge of (write cycle 1) or (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (). read cycle is accomplished by asserting chip enable () and output enable (OE) LOW, with write enable () high. The chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write enable is low, output drivers stay in high-impedance mode. ll chip inputs and outputs are TTL-compatible. Operation is from a single 3.3 ±0.3V supply. The S7C3256 is packaged in high volume industry standard packages. bsolute maximum ratings Parameter Symbol Min Max Unit Voltage on V CC relative to V t V Voltage on any pin relative to V t2 0.5 V CC V Power dissipation P D 1.0 W Storage temperature (plastic) T stg o C mbient temperature with V CC applied T bias o C DC current into outputs (low) I OUT 20 m Stresses greater than those listed under bsolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table OE Data Mode H X X High Z Standby (I SB, I SB1 ) L H H High Z Output disable (I CC ) L H L D OUT Read (I CC ) L L X D IN Write (I CC ) Key: X = Don t care, L = Low, H = High 4/23/04; v.2.0 lliance Semiconductor P. 2 of 9

3 S7C3256 Recommended operating conditions Parameter Symbol Min Typical Max Unit Supply voltage V CC V Input voltage mbient operating temperature * VIL min = 1.0V for pulse width less than 5ns. ** VIH max = V CC + 2.0V for pulse width less than 5ns. DC operating characteristics (over the operating range) 1 Parameter Sym Test conditions Input leakage current Output leakage current Operating power supply current Standby power supply current I LI I LO I CC I SB I SB1 V ** IH 2.0 V CC +0.5 V * V IL V commercial T 0 70 o C industrial T o C Min Max Min Max Min Max Min Max V CC = Max, V in = to V CC µ V CC = Max, V OUT = to V CC µ V CC = Max, V IL f = f Max, I OUT = 0m Unit m V CC = Max, > V IH f = f Max m V CC = Max, > V CC 0.2V V IN < 0.2V or V IN > V CC 0.2V, f = m Output voltage V OL I OL = 8 m, V CC = Min V V OH I OH = 4 m, V CC = Min V Capacitance (f = 1MHz, T a = room temperature, V CC = NOMINL) 2 Parameter Symbol Signals Test conditions Max Unit Input capacitance C IN,,, OE V in = 0V 5 pf I/O capacitance C I/O I/O V in = V out = 0V 7 pf 4/23/04; v.2.0 lliance Semiconductor P. 3 of 9

4 S7C3256 Read cycle (over the operating range) 3, Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes Read cycle time t RC ns ddress access time t ns 3 Chip enable () access time t ns 3 Output enable (OE) access time t OE ns Output hold from address change t OH ns 5 LOW to output in low Z t CLZ ns 4, 5 HIGH to output in high Z t CHZ ns 4, 5 OE LOW to output in low Z t OLZ ns 4, 5 OE HIGH to output in high Z t OHZ ns 4, 5 Power up time t PU ns 4, 5 Power down time t PD ns 4, 5 Key to switching waveforms Rising input Falling input Undefined output/don t care Read waveform 1 (address controlled) 3,6,7,9 ddress t RC t t OH Data valid Read waveform 2 ( controlled) 3,6,8,9 t 1 RC t OE OE t t OLZ Data valid t OHZ t CHZ t CLZ Supply current t PU t PD I CC I SB 50% 50% 4/23/04; v.2.0 lliance Semiconductor P. 4 of 9

5 S7C3256 Write cycle (over the operating range) 11 Write waveform 1 ( controlled) 10, Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes Write cycle time t WC ns Chip enable to write end t CW ns ddress setup to write end t W ns ddress setup time t S ns Write pulse width t WP ns Write recovery time t WR ns ddress hold from end of write t H ns Data valid to write end t DW ns Data hold time t DH ns 4, 5 Write enable to output in high Z t WZ ns 4, 5 Output active from write end t OW ns 4, 5 ddress D in t S t WC t W t WP t DW Data valid t H t WR t DH t WZ t OW Write waveform 2 ( controlled) 10,11 ddress t W t WC t H t S t CW t WP t WR D in t WZ t DW Data valid t DH 4/23/04; v.2.0 lliance Semiconductor P. 5 of 9

6 S7C3256 C test conditions - Output load: see Figure B - Input pulse level: to 3.0V. See Figure. - Input rise and fall times: 2 ns. See Figure. - Input and output timing reference levels: 1.5V. +3.0V 90% 10% 2 ns Figure : Input pulse 90% 10% +3.3V 320Ω 350Ω C 13 Figure B: Output load Thevenin equivalent 168Ω +1.72V Notes 1 During V CC power-up, a pull-up resistor to V CC on is required to meet I SB specification. 2 This parameter is sampled, but not 100% tested. 3 For test conditions, see C Test Conditions, Figures, B. 4 These parameters are specified with CL = 5pF, as in Figures B. Transition is measured ±500mV from steady-state voltage. 5 This parameter is guaranteed, but not tested. 6 is High for read cycle. 7 and OE are Low for read cycle. 8 ddress valid prior to or coincident with transition Low. 9 ll read cycle timings are referenced from the last valid address to the first transitioning address. 10 N/ 11 ll write cycle timings are referenced from the last valid address to the first transitioning address. 12 N/ 13 C=30pF, except on High Z and Low Z parameters, where C=5pF. 4/23/04; v.2.0 lliance Semiconductor P. 6 of 9

7 S7C3256 Package diagrams 28-pin SOJ e Pin 1 28-pin TSOP1 D E1 2 E2 E 1 c B b Seating Plane 28-pin SOJ Min Max in inches B b c D E E E e BSC b e c L pin TSOP mm Min Max D Hd α b c D e 0.55 nominal E E Hd L α 0 5 4/23/04; v.2.0 lliance Semiconductor P. 7 of 9

8 S7C3256 Ordering information Package / ccess time Temperature 10 ns 12 ns 15 ns 20 ns Plastic SOJ, 300 mil TSOP 8x13.4mm Commercial S7C JC S7C JC S7C JC S7C JC Industrial S7C JI S7C JI S7C JI S7C JI Commercial S7C TC S7C TC S7C TC S7C TC Industrial S7C TI S7C TI S7C TI S7C TI Note: dd suffix N to the above part number for lead free parts. (Ex. S7C JIN) Part numbering system S7C XX X C or I X Voltage: Packages: Temperature range: SRM prefix 3 = 3.3V supply Device number ccess time J = SOJ 300 mil T = TSOP 8x13.4mm C = 0 o C to 70 0 C I = -40C to 85C N= Lead Free Part 4/23/04; v.2.0 lliance Semiconductor P. 8 of 9

9 S7C3256 lliance Semiconductor Corporation 2575, ugustine Drive, Santa Clara, C Tel: Fax: Copyright lliance Semiconductor ll Rights Reserved Part Number: S7C3256 Document Version: v.2.0 Copyright 2003 lliance Semiconductor Corporation. ll rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of lliance. ll other brand and product names may be the trademarks of their respective companies. lliance reserves the right to make changes to this document and its products at any time without notice. lliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents lliance's best data and/or estimates at the time of issuance. lliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. lliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of lliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in lliance's Terms and Conditions of Sale (which are available from lliance). ll sales of lliance products are made exclusively according to lliance's Terms and Conditions of Sale. The purchase of products from lliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of lliance or third parties. lliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of lliance products in such lifesupporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify lliance against all claims arising from such use.

5.0 V 256 K 16 CMOS SRAM

February 2006 5.0 V 256 K 16 CMOS SRAM Features Pin compatible with AS7C4098 Industrial and commercial temperature Organization: 262,144 words 16 bits Center power and ground pins High speed - 10/12/15/20