8-Input NAND Gate IN74HCT30A TECHNICAL DATA LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE. Rev. 00

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1 TENIL T IN74T3 8-Input NN ate The IN74T3 is high-speed Si-gate MOS device and is pin compatible with low power Schottky TTL (LSTTL). The device provide the 8-input NN function. Outputs irectly Interface to MOS, NMOS, and TTL Operating oltage Range: to Low Input urrent:. µ igh Noise Immunity haracteristic of MOS evices ORERIN INORMTION IN74T3N Plastic IN74T3 SOI T = for all packages LOI IRM E Y UNTION TLE PIN SSINMENT E N 7 8 Y PIN 4 = PIN 7 = N Inputs Output С E Y L X X X X X X X X L X X X X X X X X L X X X X X X X X L X X X X X X X X L X X X X X X X X L X X X X X X X X L X X X X X X X X L L X = don t care

2 IN74T3 MXIMUM RTINS* Symbol Parameter alue Unit Supply oltage (Referenced to N) -.5 to +7. IN Input oltage (Referenced to N) -.5 to +.5 OUT Output oltage (Referenced to N) -.5 to +.5 I IN Input urrent, per Pin ±2 m I OUT Output urrent, per Pin ±25 m I Supply urrent, and N Pins ±5 m P Power issipation in Still ir, Plastic IP** SOI Package** Tstg Storage Temperature -65 to +5 T L Lead Temperature, mm from ase for Seconds (Plastic IP or SOI Package) *Maximum Ratings are those values beyond which damage to the device may occur. unctional operation should be restricted to the Recommended Operating onditions. **erating - Plastic IP: - mw/ from 65 to 25 SOI Package: : - 7 mw/ from 65 to mw 26 REOMMENE OPERTIN ONITIONS Symbol Parameter Min Max Unit Supply oltage (Referenced to N) IN, OUT Input oltage, Output oltage (Referenced to N) T Operating Temperature, ll Package Types t r, t f Input Rise and all Time (igure ) = = = ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. owever, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. or proper operation, IN and OUT should be constrained to the range N ( IN or OUT ). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either N or ). Unused outputs must be left open.

3 IN74T3 ELETRIL RTERISTIS (oltages Referenced to N) Symbol Parameter Test onditions uaranteed Limit Unit 25 to I IL O OL I IL I I I I T Minimum igh-level Input oltage Maximum Low -Level Input oltage Minimum igh-level Output oltage Maximum Low-Level Output oltage Maximum Low-Level Input Leakage urrent Maximum igh-level Input Leakage urrent Maximum Quiescent Supply urrent (per Package) Maximum dditional Quiescent Supply urrent OUT or OUT - I OUT 2 µ OUT or OUT - I OUT 2 µ IN = I or IL I OUT - 2 µ IN = I or IL I OUT - 4. m IN = I or IL I OUT 2 µ IN = I or IL I OUT 4. m IN = µ IN =.. µ IN = or I OUT = µ IN =2.4 any one input, IN = or, others inputs I OUT = µ 2 4 µ mа

4 IN74T3 ELETRIL RTERISTIS ( L =5p,Input t r =t f =6. ns) Symbol Parameter 25 to -55 uaranteed Limit Unit t PL, t PL Maximum Propagation elay (igure ) ns t TL, t TL Maximum Output Transition Time (igure ) ns IN Maximum Input apacitance 5. p P Power issipation apacitance (Per ate) Used to determine the no-load dynamic power consumption: P = P 2 f+i T =25, =5. 27 p t f t r Input N t PL t PL Output t TL t TL = 3 =.3 2 igure. Switching Waveforms PULSE ENERTOR I R T EIE UNER TEST O L 5 p Termination resistance R T should be equal to Z OUT of pulse generators igure 2. Test ircuit

5 IN74T3 N SUIX PLSTI IP (MS - ) NOTES: 4.25 (.) M T. imensions, do not include mold flash or protrusions. Maximum mold flash or protrusions.25 mm (.) per side. 8 7 N -T- SETIN 5.27 PLNE K M J J 8.25 (.) M T M NOTES: K.25. imensions and do not include mold flash or protrusion. M Maximum mold flash or protrusion 5 mm (.6) per side P for ; for.25 mm (.) per side. R T- K SETIN PLNE M L J imension, mm Symbol MIN MX J K L M.2.36 N.38 SUIX SOI (MS - 2) P Symbol MIN MX R x 45 imension, mm.27

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