TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT
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- Polly Wade
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1 T4H40,40P/F/FT,40P/F/FN/FT TOSHI MOS Digital Integrated ircuit Silicon Monolithic T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FN,T4H40FT T4H40P/F/FT 8-hannel nalog Multiplexer/Demulitiplexer T4H40P/F/FT Dual 4-hannel nalog Multiplexer/Demultiplexer T4H40P/F/FN/FT Triple -hannel nalog Multiplexer/Demultiplexer Note: xxxfn (JEDE SOP) is not available in Japan. T4H40P, T4H40P, T4H40P The T4H40/40/40 are high speed MOS NLOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the MOS low power dissipation. The T4H40 has an 8 channel configuration, the T4H40 has a 4 channel configuration and the T4H40 has a channel configuration. The digital signal to the control terminal turns ON the corresponding switch of each channel a large amplitude signal (V VEE) can then be switched by the small logical amplitude (V ) control signal. For example, in the case of V = V, = 0 V, VEE = V, signals between V and + V can be switched from the logical circuit with a single power supply of V. s the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. ll inputs are equipped with protection circuits against static discharge or transient excess voltage. Features High speed: tpd = ns (typ.) at V = V, VEE = 0 V Low power dissipation: I = 4 µ (max) at Ta = High noise immunity: VNIH = VNIL = 8% V (min) Low ON resistance: RON = 0 Ω (typ.) at V VEE = 9 V High noise immunity: THD = 0.0% (typ.) at V VEE = 9 V Pin and function compatible with 40/40/40 T4H40F, T4H40F, T4H40F T4H40FN T4H40FT, T4H40FT, T4H40FT Weight DIP6-P :.00 g (typ.) SOP6-P-00-. : 0.8 g (typ.) SOP6-P-00-. : 0.8 g (typ.) SOL6-P-0-. : 0. g (typ.) TSSOP6-P : 0.06 g (typ.)
2 T4H40,40P/F/FT,40P/F/FN/FT Pin ssignment T4H40 T4H Y 6 6 Y X OM 4 Y-OM 4 X 4 0 Y 4 X-OM Y 0X 6 6 X (top view) (top view) T4H40 Y 6 0Y Y-OM Z 4 X-OM Z-OM 4 X 0Z 0X (top view)
3 T4H40,40P/F/FT,40P/F/FN/FT IE Logic Symbol T4H40 MUXDMUX () 0 0 (0) 8 (9) (6) G8 () OM () (4) () () () () () (4) T4H40 MUXDMUX (0) 0 0 (9) 4 (6) G4 0 () X-OM 0... () Y-OM () (4) () () () () () (4) 0X X X X 0Y Y Y Y T4H40 (6) MUXDMUX G X-OM Z-OM () (4) (0) Y-OM () (9) 0 0, () () () () () (4) () 0 0X X 0Y Y 0Z Z Truth Table ontrol Inputs ON hannel Inhibit * H40 H40 H40 L L L L 0 0X, 0Y 0X, 0Y, 0Z L L L H X, Y X, 0Y, 0Z L L H L X, Y 0X, Y, 0Z L L H H X, Y X, Y, 0Z L H L L 4 0X, 0Y, Z L H L H X, 0Y, Z L H H L 6 0X, Y, Z L H H H X, Y, Z H X X X None None None X: Don t care *: Except H40
4 T4H40,40P/F/FT,40P/F/FN/FT System Diagram T4H40 OUT c IN OM 0 Logic Level onverter 4 6 OUT c IN T4H40 OUT c IN X-OM 0X Logic Level onverter X X X 0Y Y Y OUT c IN Y Y-OM T4H40 Y-OM X-OM OUT c IN 0X Logic Level onverter X 0Y Y 0Z OUT c IN Z Z-OM 4
5 bsolute Maximum Ratings (Note ) T4H40,40P/F/FT,40P/F/FN/FT haracteristics Symbol Rating Unit Supply voltage range 0. to V Supply voltage range - 0. to V ontrol input voltage V IN 0. to + 0. V Switch I/O voltage V I/O 0. to + 0. V ontrol input diode current I IK ±0 m I/O diode current I OK ±0 m Switch through current I T ± m D or ground current I ±0 m Power dissipation P D 00 (DIP) (Note )/80 (SOP, TSSOP) mw Storage temperature T stg 6 to 0 Note : Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in I performance or even destruction. Note : 00 mw in the range of Ta = 40 to 6. From Ta = 6 to 8 a derating factor of 0 mw/ should be applied up to 00 mw. Recommended Operating onditions (Note) haracteristics Symbol Rating Unit Supply voltage range to 6 V Supply voltage range 6 to 0 V Supply voltage range - to V ontrol input voltage V IN 0 to V Switch I/O voltage V I/O to V Operating temperature T opr 40 to 8 0 to 000 ( =.0 V) ontrol input rise and fall time t r, t f 0 to 00 ( = V) ns 0 to 400 ( = V) Note: The recommended operating conditions are required to ensure the normal operation of the device. Unused inputs must be tied to either V or.
6 T4H40,40P/F/FT,40P/F/FN/FT Electrical haracteristics D haracteristics haracteristics Symbol Test ondition Ta = Ta = 40 to 8 (V) (V) Min Typ. Max Min Max Unit High-level control input voltage V IH V Low-level control input voltage V IL V V IN = V IL or V IH 8 80 V I/O = to 0 0 I I/O m 0 00 ON resistance R ON V IN = V IL or V IH V I/O = or I I/O m Ω Difference of ON resistance between switches R ON V IN = V IL or V IH V I/O = to I I/O m Ω Input/output leakage current (switch off) I OFF V OS = or V IS = or V IN = V IL or V IH ±60 ±00 ±600 ±000 n Switch input leakage current (switch on) I IZ V OS = or V IN = V IL or V IH ±60 ±00 ±600 ±000 ontrol input current I IN V IN = or ±0. ±.0 µ Quiescent supply I current V IN = or µ n 6
7 T4H40,40P/F/FT,40P/F/FN/FT haracteristics ( L = 0 pf, input: t r = t f = 6 ns, = 0 V) haracteristics Phase difference between input and output Output enable time Output disable time ontrol input capacitance OMMON terminal capacitance SWITH terminal capacitance Feedthrough capacitance Power dissipation capacitance Symbol φ I/O t pzl t pzh t plz t phz Test ondition Ta = Ta = 40 to 8 (V) (V) Min Typ. Max Min Max.0 60 ll types (Note ) (Note ) (Note ) (Note ) (Note ) (Note ) IN ll types 0 0 pf IS OS IOS PD (Note ) Unit ns ns ns pf pf pf pf Note : R L = kω Note : PD is defined as the value of the internal equivalent capacitance of I which is calculated from the operating current consumption without load. verage operating current can be obtained by the equation: I (opr) = PD f IN + I
8 T4H40,40P/F/FT,40P/F/FN/FT nalog Switch haracteristics ( = 0 V, Ta = ) (Note ) haracteristics Symbol Test ondition (V) (V) Typ. Unit Sine wave distortion (T.H.D) R L = 0 kω, L = 0 pf f IN = khz V IN = 4.0 V p-p V IN = 8.0 V p-p V IN =.0 V p-p % ll (Note ) 0 40 (Note ) djust f IN voltage to obtain 0dm at V OS 40 9 ll (Note ) 90 Frequency responce (switch on) f max Increase f IN frequency until d meter reads d R L = 0 Ω, L = 0 pf f IN = MHz, sine wave 40 (Note ) ll (Note ) 00 MHz 40 (Note ) Feed through attenuation (switch off) V IN is centered at ( )/ djust input for 0dm R L = 600 Ω, L = 0 pf f IN = MHz, sine wave d rosstalk (control input to signal output) R L = 600 Ω, L = 0 pf f IN = MHz, square wave (t r = t f = 6 ns) mv rosstalk (between any switches) djust V IN to obtain 0dm at input R L = 600 Ω, L = 0 pf f IN = MHz, sine wave d Note : These characteristics are determined by design of devices. Note : Input OMMON terminal, and measured at SWITH terminal. Note : Input SWITH terminal, and measured at OMMON terminal. 8
9 Switching haracteristics Test ircuits. t plz, t phz, t pzl, t pzh T4H40,40P/F/FT,40P/F/FN/FT 6 ns 6 ns from P.G S I/O O/I kω 0 pf S V V O/I (S =, S = ) 90% 0% t pzh V O/I (S =, S = ) t pzl 0% 0% 0% 90% t phz 0% t plz V OH V OL V OH V OL. ross Talk (control input-switch output) f IN = MHz duty = 0% t r = t f = 6 ns from P.G I/O O/I 600 Ω 600 Ω 0 pf. Feedthrough ttenuation 0. µf I/O O/I V IN 600 Ω 600 Ω 0 pf 9
10 T4H40,40P/F/FT,40P/F/FN/FT 4. IOS, IS, OS IOS SWITH I/O O/I OMMON OS IS. ross Talk (between any two switches) V IN I/O O/I 0. µf 600 Ω 600 Ω 0 pf I/O O/I 600 Ω 600 Ω 0 pf 6. Frequency Response (switch on) V IN I/O O/I 0. µf 0 Ω 0 pf 0
11 T4H40,40P/F/FT,40P/F/FN/FT Package Dimensions Weight:.00 g (typ.)
12 T4H40,40P/F/FT,40P/F/FN/FT Package Dimensions Weight: 0.8 g (typ.)
13 T4H40,40P/F/FT,40P/F/FN/FT Package Dimensions Weight: 0.8 g (typ.)
14 Package Dimensions (Note) T4H40,40P/F/FT,40P/F/FN/FT Note: This package is not available in Japan. Weight: 0. g (typ.) 4
15 T4H40,40P/F/FT,40P/F/FN/FT Package Dimensions Weight: 0.06 g (typ.)
16 T4H40,40P/F/FT,40P/F/FN/FT Note: Lead (Pb)-Free Packages DIP6-P SOP6-P-00-. SOL6-P-0-. TSSOP6-P RESTRITIONS ON PRODUT USE 0606E The information contained herein is subject to change without notice. 00_D TOSHI is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHI products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHI products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHI products are used within specified operating ranges as set forth in the most recent TOSHI products specifications. lso, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHI Semiconductor Reliability Handbook etc. 00_ The TOSHI products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHI products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHI products listed in this document shall be made at the customer s own risk. 00_ The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations _Q The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHI for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHI or others. 00_ The products described in this document are subject to the foreign exchange and foreign trade laws. 00_E 6
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