CMOS BCD-to-7-Segment Latch Decoder Drivers IW4511B TECHNICAL DATA PIN ASSIGNMENT. Rev. 00
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1 TECNICAL DATA CMOS CDto7Segment Latch Decoder Drivers IW4511 ICs IW4511 is usen in highperformance computing systems with low power consumption in portable measuring equipments, communication devices with power supply from telephone networks, instruments using alternative power supplies (solar batteries, thermal elements) etc. Standard symmetrical output characteristic Operating Voltage Range: 3. to 18 V % testing for quiescent current at 2V Maximum input current of 1 μa at 18 V over full packagetemperature range; na at 18 V and 25 C Noise margin (over full package temperature range): 1. V V supply 2. V V supply 2.5 V V supply N SUFFIX Plastic DIP D SUFFIX SOIC ORDERIN INFORMATION IW4511N Plastic DIP IW4511D SOIC T A = 55 to 125 C for all packages PIN ASSINMENT 1 16 С 2 f LT 3 14 g L 4 13 a LE/ STROE 5 12 b D 6 11 c A 7 d V SS 8 9 e Rev.
2 TRUT TALE Inputs Outputs Display LE L LT D C A a b c d e f g X X L X X X X 8 X L X X X X L L L L L L L blank L L L L L L L L L L L L L L L 1 L L L L L L 2 L L L L L 3 L L L L L L L 4 L L L L L 5 L L L L L 6 L L L L L L 7 L L L L 8 L L L L L 9 L L L L L L L L L L blank L L L L L L L L L blank L L L L L L L L L L blank L L L L L L L L L blank L L L L L L L L L blank L L L L L L L L blank X X X X * * * Depends on CD code previously, applied when LE=L X Don't Care Rev.
3 MAXIMUM RATINS Recommended Symbol Parameter Maximum ratings Unit operating conditions min max min max DC Supply Voltage V V I Input Voltage Range V V O Output Voltage Range V I I DC Input Current ± mа P D P tot Power dissipation per package Power Dissipation per Output Transistor 5* mw mw *P D for IW4511N for temperature range 55 + С and for ICs IW4511D for temperature range С P D for IW4511N derate linearity at 12 mw/ C for temperature range C. P D for IW4511D derate linearity at 7 mw/ C for temperature range C. Rev.
4 STATIC ELECTRICAL CARACTERISTIC, uaranteed Limits Symbol Parameter Test conditions V 55 C 25 C 125 C min max min max min max Units V I V IL Minimum igh Level Input Voltage Maximum Low Level Input Voltage V O ighlevel Output Voltage V OL I IL I I I DD I OL I O LowLevel Output Voltage Low Level Input Current igh Level Input Current Quiescent Devices Current Output Low (Sink) Current V O =.5 V or 1.2 V V V O = 1. V or 1.2 V V O = 1.5 V or 1.2 V V O =.5 V or 1.2 V V V O = 1. V or 1.2 V V O = 1.5 V or 1.2 V V I = V SS or V V I = V SS or V I = V SS μа V I = μа V I = V SS or 2 V I = V SS or V OL =.4 V V OL =.5 V V OL = 1.5 V Output igh V I = V SS or (Source) Current V O = 2.5 V V O = 4.6 V V O = 9.5 V V O = 13.5 V V μа mа mа Rev.
5 DYNAMIC ELECTRICAL CARACTERISTICS (C L =5 pf, R L = 2 kohm, t L = t L 2 ns),, uaranteed Limits Symbol Parameter Test conditions V 55 C 25 C 125 C min max min max min max Unit t PL ightolow Level Input (AD) ightolow Level Input L ightolow Level Input LT t PL Lowtoigh Level Input (AD) Lowtoigh Level Input L Lowtoigh Level Input LT t TL Transition ightolow Level t TL Transition Lowtoigh Level t SU SetUp (AD) as per LE t old (A D) after LE t WL LE Pulse Width Rev.
6 CAPACITANCE, uaranteed Limits Symbol Parameter Unit v min max C Input Capacitance 7.5 pf IN.9 t L t L.9 LE V t WL t L t SU t.9.9 t L V t PL t PL.9.9 V O ag ttl ttl V OL diagram when taking dynamic parameters Rev.
7 N SUFFIX PLASTIC DIP (MS 1) 16 1 A F.25 (.) M T NOTES: 1. Dimensions A, do not include mold flash or protrusions. Maximum mold flash or protrusions.25 mm (.) per side. 9 8 D N T C T K SEATIN PLANE M L J Dimension, mm Symbol MIN MAX A C 5.33 D F J K L M.2.36 N.38 D SUFFIX SOIC (MS 12AC) 16 1 D A.25 (.) M T C M 9 8 K P C SEATIN PLANE Symbol MIN MAX A C D F J 8 NOTES: K Dimensions A and do not include mold flash or protrusion. M Maximum mold flash or protrusion. mm (.6) per side P for A; for.25 mm (.) per side. R.25.5 J R x 45 F M Dimension, mm Rev.
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