AVAILABLE OPTIONS PACKAGED DEVICES CHIP CARRIER (FK) CERAMIC DIP (JG) TL7702ACD TL7715ACD TL7702ACP TL7715ACP TL7702ACY TL7715ACY

Size: px
Start display at page:

Download "AVAILABLE OPTIONS PACKAGED DEVICES CHIP CARRIER (FK) CERAMIC DIP (JG) TL7702ACD TL7715ACD TL7702ACP TL7715ACP TL7702ACY TL7715ACY"

Transcription

1 Power-On Reset Generator Automatic Reset Generation After Voltage Drop Wide Supply Voltage Range Precision Voltage Sensor Temperature-Compensated Voltage Reference True and Complement Reset Outputs Externally Adjustable Pulse Duration description The TLxxA family of monolithic integrated circuit supply voltage supervisors are specifically designed for use as reset controllers in microcomputer and microprocessor systems. The supply voltage supervisor monitors the supply for undervoltage conditions at the input. During power up, the output becomes active (low) when V CC attains a value approaching. V. At this point (assuming that is above V IT+ ), the delay timer function activates a time delay after which outputs and TL0A, TL0A, TL09A, TLA, TLA RESIN D, JG, OR P PACKAGE (TOP VIEW) REF RESIN go inactive (high and low respectively). When an undervoltage condition occurs during normal operation, outputs and go active. To ensure that a complete reset occurs, the reset outputs remain active for a time delay after the voltage at the input exceeds the positive-going threshold value. The time delay is determined by the value of the external capacitor C T : t d =. x 0 x C T, where C T is in farads (F) and t d is in seconds (s). During power down (assuming that is below V IT ), the outputs remain active until the V CC falls below a maximum of V. After this, the outputs are undefined. An external capacitor (typically 0.µF for the TLxxAC and TLxxAI and typically 0.0 µf for the TLxxAM) must be connected to REF to reduce the influence of fast transients in the supply voltage. The TLxxAC series are characterized for operation from 0 C to 0 C. The TLxxAI series are characterized for operation from 0 C to C. The TL0AM and TL0AM are characterized for operation over the full military range of C to C. FK PACKAGE (TOP VIEW) REF V CC No internal connection V CC TA 0 C to 0 C 0 C to C C to C SMALL OUTLINE (D) AVAILABLE OPTIONS PACKAGED DEVICES CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) CHIP FORM (Y) TL0ACD TLACD TL0ACP TLACP TL0ACY TLACY TL0AID TLAID TL0AMFK TL0AMFK TL0AMJG TL0AMJG TL0AIP TLAIP PRODUION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 99, Texas Instruments Incorporated On products compliant to MIL-STD-, Class B, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters. POST OFFICE BOX 0 DALLAS, TEXAS

2 TLxxAY chip information This chip, when properly assembled, displays characteristics similar to the TLxxAC. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS () () () () REF RESIN () () () () TLxxAY () () () () () () () () CHIP THICKNESS: MILS TYPICAL BONDING PADS: MILS MINIMUM TJmax = 0 C TOLERAES ARE ±0% ALL DIMENSIONS ARE IN MILS POST OFFICE BOX 0 DALLAS, TEXAS

3 functional block diagram The functional block diagram is shown for illustrative purposes only; the actual circuit includes a trimming network to adjust the reference voltage and sense comparator trip point. Reference Voltage 00 µa R (see Note A) R (see Note A) RESIN NOTES: A. TL0A: R = 0 Ω, R = open TL0A: R =. kω, R = 0 kω TL09A: R = 9. kω, R = 0 kω TLA: R =. kω, R = 0 kω TLA: R =. kω, R = 0 kω B. Terminal numbers shown are for the D, JG, or P package. C. Resistor values shown are nominal. timing diagram and REF Threshold Voltage. V V ÎÎ t d td Output Undefined Output Undefined POST OFFICE BOX 0 DALLAS, TEXAS

4 absolute maximum ratings over operating free-air temperature (unless otherwise noted) Supply voltage, V CC (see Note ) V Input voltage range, V I, RESIN V to 0 V Input voltage range, V I, : TL0A (see Note ) V to V TL0A V to 0 V TL09A V to 0 V TLA, TLA V to 0 V High-level output current, I OH, ma Low-level output current, I OL, ma Continuous total power dissipation See Dissipation Rating Table Operating free-air temperature range, T A : TLxxAC C to 0 C TLxxAl C to C TL0AM, TL0AM C to C Storage temperature range, T stg C to 0 C Case temperature for 0 seconds, T C : FK package C Lead temperature, mm (/ inch) from case for 0 seconds: D or P package C Lead temperature, mm (/ inch) from case for 0 seconds: JG package C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE : All voltage values are with respect to the network ground terminal. PACKAGE TA C POWER RATING DISSIPATION RATING TABLE DERATING FAOR ABOVE TA = C TA = 0 C POWER RATING TA = C POWER RATING TA = C POWER RATING D mw. mw/ C mw mw mw FK mw.0 mw/ C 0 mw mw mw JG 00 mw. mw/ C mw mw 0 mw P 000 mw.0 mw/ C 0 mw 0 mw 00 mw recommended operating conditions TLxxAC, TLxxAI TLxxAM MIN MAX MIN MAX Supply voltage,.. 0 V High-level input voltage at RESIN, VIH V Low-level input voltage at RESIN, VIL V TL0A 0 See Note 0 See Note TL0A Input voltage,, VI TL09A 0 V TLA 0 0 TLA 0 0 High-level output current,, IOH ma Low-level output current,, IOL ma Timing capacitor, 0 0 µf TLxxAC 0 0 Operating free-air temperature range, TA TLxxAI 0 C TL0AM, TL0AM NOTE : For proper operation of the TL0A, the voltage applied to the terminal should not exceed V or V, whichever is less. POST OFFICE BOX 0 DALLAS, TEXAS

5 electrical characteristics over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS TLxxAC, TLxxAI MIN TYP MAX VOH High-level output voltage, IOH = ma. V VOL Low-level output voltage, IOL = ma 0. V Vref Reference voltage TA = C... V VIT Negative-going i input threshold h voltage, TL0A... TL0A... TL09A TA = C... V TLA TLA... TL0A 0 TL0A Vhysy Hysteresis, (VIT + VIT ) TL09A TA = C 0 mv TLA II Input current, RESIN TLA VI =. V to 0 VI = 0. V 00 II Input current, TL0A Vref < VI <. V 0. µa IOH High-level output current, VO = V 0 µa IOL Low-level output current, VO = 0 0 µa ICC Supply current All inputs and outputs open. ma All electrical characteristics are measured with 0.-µF capacitors connected at REF,, and to. switching characteristics over recommended operating conditions (unless otherwise noted) tw(s) PARAMETER TEST CONDITIONS TLxxAC, TLxxAI MIN TYP MAX Output pulse duration = 0. µf 0... µs Input pulse duration at RESIN 0. µs Pulse duration at input to switch outputs VIH = VIT + 00 mv, VIL = VIT 00 mv µa µs tpd Propagation delay time from RESIN to = V µs 0. tr. = V, See Note. tf 0. All switching characteristics are measured with 0.-µF capacitors connected at REF and to. NOTE : The rise and fall times are measured with a.-kω load resistor at and. µs µs POST OFFICE BOX 0 DALLAS, TEXAS

6 electrical characteristics over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS TL0AM, TL0AM MIN TYP MAX VOH High-level output voltage, IOH = ma. V VOL Low-level output voltage, IOL = ma 0. V Vref Reference voltage... V VIT Negative-going g g input threshold voltage, TL0AM =Vto0V TL0AM V CC. V Vhys Hysteresis (VIT + VIT ) II Input current, RESIN TL0AM TL0AM V CC =Vto0V. V VI =. V to 0 VI = 0. V 00 II Input current, TL0AM Vref < VI <. V 0. µa IOH High-level output current, VO = 0 V 0 µa IOL Low-level output current, VO = 0 0 µa ICC Supply current All inputs and outputs open. ma All electrical characteristics are measured with 0.0-µF capacitors connected at REF,, and to. switching characteristics over recommended operating conditions (unless otherwise noted) tw(s) PARAMETER TEST CONDITIONS Pulse duration at input to switch outputs VIH = VIT + 00 mv, VIL = VIT 00 mv 0 TL0AM, TL0AM MIN TYP MAX V mv µa * µs tpd Propagation delay time, RESIN to = V. µs tr tf 0.* = V, See Note 0.* * On products compliant to MIL-STD-, Class B, this parameter is not production tested. All switching characteristics are measured with 0.0-µF capacitors connected at REF and to. NOTE : The rise and fall times are measured with a.-kω load resistor at and..*.* µs µs POST OFFICE BOX 0 DALLAS, TEXAS

7 electrical characteristics over recommended operating conditions, T A = C (unless otherwise noted) PARAMETER TEST CONDITIONS TLxxAY MIN TYP MAX Vref Reference voltage. V VIT Negative-going i input threshold h voltage, TL0A. TL0A. TL09A. V TLA 0. TLA. TL0A 0 TL0A Vhys Hysteresis, (VIT + VIT ) TL09A 0 mv TLA TLA II Input current, TL0A Vref < VI <. V 0. µa ICC Supply current All inputs and outputs open. ma All electrical characteristics are measured with 0.-µF capacitors connected at REF,, and to. switching characteristics over recommended operating conditions, T A = C (unless otherwise noted) PARAMETER TEST CONDITIONS TLxxAY MIN TYP MAX Output pulse duration = 0. µf. µs All switching characteristics are measured with 0.-µF capacitors connected at REF and to. POST OFFICE BOX 0 DALLAS, TEXAS 9

8 PARAMETER MEASUREMENT INFORMATION Voltage Drop tw(s) VIT+ VIT VIT+ 0 V VIH RESIN Undefined tf 90% 0% tr 90% 0. V tpd 0% V 90% ÎÎ t d VIL VOH () td tf td 90% 0% 0% 0% 0% 0% VOL() tr Figure. Voltage Waveforms 0 POST OFFICE BOX 0 DALLAS, TEXAS

9 TYPICAL CHARAERISTICS ASSERTION TIME vs LOAD RESISTAE DEASSERTION TIME vs LOAD RESISTAE t Assertion Time ns 0 tr = V = 0. µf CL = 0 pf TA = C µ s t Deassertion Time tf = V = 0. µf CL = 0 pf TA = C tf tr 0 0 RL Load Resistance kω RL Load Resistance kω Figure Figure ASSERTION TIME vs LOAD CAPACITAE DEASSERTION TIME vs LOAD CAPACITAE. t Assertion Time ns 0 = V = 0. µf RL =. kω TA = C tr t Deassertion Time µ s.... = V = 0. µf RL =. kω TA = C tf tr tf CL Load Capacitance pf CL Load Capacitance pf Figure Figure For proper operation both and should be terminated with resistors of similar value. Failure to do so may cause unwanted plateauing in either output waveform during switching. POST OFFICE BOX 0 DALLAS, TEXAS

10 APPLICATION INFORMATION V V RESIN TLA REF 0. µf 0 kω 0 kω kω RESIN TL0A REF 0. µf 0 kω System Reset 0 kω RESIN TLA REF 0 kω (F) = td(s). x 0 0. µf V Figure. Multiple Power Supply System Reset Generation V RESIN TL0A REF 0 kω 0 kω 0. µf TMS000 VSS (F) = td(s). x 0 Figure. Reset Controller for TMS000 System Terminal numbers shown are for the D, JG, and P packages. POST OFFICE BOX 0 DALLAS, TEXAS

11 APPLICATION INFORMATION V Input µa0 INPUT OUTPUT COMMON CI CO TL0A REF 0. µf. kω G. kω S D kω Q N99 System Figure. Eliminating Undefined States Using a P-Channel JFET 0 kω 0 Ω Input TLxxA RESIN. kω Q N0 System REF 0 kω kω 0. µf Figure 9. Eliminating Undefined States Using a pnp Transistor Terminal numbers shown are for the D, JG, and P packages. POST OFFICE BOX 0 DALLAS, TEXAS

12 POST OFFICE BOX 0 DALLAS, TEXAS

13 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ( Critical Applications ). TI SEMICONDUOR PRODUS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright 99, Texas Instruments Incorporated

TL7702B, TL7702BY, TL7705B, TL7705BY SUPPLY VOLTAGE SUPERVISORS

TL7702B, TL7702BY, TL7705B, TL7705BY SUPPLY VOLTAGE SUPERVISORS Power-On Reset Generator Automatic Reset Generation After Voltage Drop Output Defined From V CC 1 V Precision Voltage Seor Temperature-Compeated Voltage Reference True and Complement Reset Outputs Externally

More information

SN54HC682, SN74HC682 8-BIT MAGNITUDE COMPARATORS

SN54HC682, SN74HC682 8-BIT MAGNITUDE COMPARATORS SCLS0C MARCH 9 REVISED MAY 99 Compare Two -Bit Words 00-kΩ Pullup Resistors Are on the Q Inputs Package Options Include Plastic Small-Outline (DW) and Ceramic Flat (W) Packages, Ceramic Chip Carriers (FK),

More information

SN54HC20, SN74HC20 DUAL 4-INPUT POSITIVE-NAND GATES

SN54HC20, SN74HC20 DUAL 4-INPUT POSITIVE-NAND GATES SNHC0, SN7HC0 DUAL -INPUT POSITIVE-NAND GATES SCLS0C DECEMBER REVISED MAY 7 Package Options Include Plastic Small-Outline (D) and Ceramic Flat (W) Packages, Ceramic Chip Carriers (FK), and Standard Plastic

More information

SN54F109, SN74F109 DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET

SN54F109, SN74F109 DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET Package Optio Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 00-mil DIPs description These devices contain two independent J-K positive-edge-triggered flip-flops.

More information

SN54HC153, SN74HC153 DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

SN54HC153, SN74HC153 DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS Permit Multiplexing from n Lines to One Line Perform Parallel-to-Serial Conversion Strobe (Enable) Line Provided for Cascading (N Lines to n Lines) Package Options Include Plastic Small-Outline (D), Thin

More information

SN54HC273, SN74HC273 OCTAL D-TYPE FLIP-FLOPS WITH CLEAR SCLS136B DECEMBER 1982 REVISED MAY 1997

SN54HC273, SN74HC273 OCTAL D-TYPE FLIP-FLOPS WITH CLEAR SCLS136B DECEMBER 1982 REVISED MAY 1997 ontain Eight Flip-Flops With Single-ail Outputs Direct lear Input Individual Data Input to Each Flip-Flop Applications Include: Buffer/Storage egisters Shift egisters Pattern Generators Package Options

More information

SN54F175, SN74F175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR

SN54F175, SN74F175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR Contain Four Flip-Flops With Double-ail Outputs Buffered Clock and Direct Clear Inputs Applicatio Include: Buffer/Storage egisters Shift egisters Pattern Generators Package Optio Include Plastic Small-Outline

More information

SN54HC259, SN74HC259 8-BIT ADDRESSABLE LATCHES

SN54HC259, SN74HC259 8-BIT ADDRESSABLE LATCHES SN4H29, SN4H29 8-BIT ARESSABLE LATHES 8-Bit Parallel-Out Storage Register Performs Serial-to-Parallel onversion With Storage Asynchronous Parallel lear Active-High ecoder Enable Input Simplifies Expansion

More information

SN54HC138, SN74HC138 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS

SN54HC138, SN74HC138 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS SNH8, SNH8 -LINE TO 8-LINE DEODERS/DEMULTIPLEXERS Designed Specifically for High-Speed Memory Decoders and Data Transmission Systems Incorporate Three Enable Inputs to Simplify ascading and/or Data Reception

More information

SN54HC42, SN74HC42 4-LINE TO 10-LINE DECODERS (1 of 10)

SN54HC42, SN74HC42 4-LINE TO 10-LINE DECODERS (1 of 10) SNH, SNH -LINE TO -LINE EOERS ( of ) SLS EEMER REVISE MY Full ecoding of Input Logic ll Outputs re High for Invalid onditions lso for pplications as -Line to -Line ecoders Package Options Include Plastic

More information

SN54HC151, SN74HC151 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

SN54HC151, SN74HC151 8-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SNH, SNH 8-Line to -Line Multiplexers an Perform as: oolean Function enerators Parallel-to-Serial onverters Data Source Selectors Package Options Include Plastic Small-Outline (D) and eramic Flat () Packages,

More information

SN54HC393, SN74HC393 DUAL 4-BIT BINARY COUNTERS

SN54HC393, SN74HC393 DUAL 4-BIT BINARY COUNTERS Dual 4-Bit Binary Counters With Individual Clocks Direct Clear for Each 4-Bit Counter Can Significantly Improve System Densities by educing Counter Package Count by 0 Percent Package Options Include Plastic

More information

SN54HC4060, SN74HC STAGE ASYNCHRONOUS BINARY COUNTERS AND OSCILLATORS

SN54HC4060, SN74HC STAGE ASYNCHRONOUS BINARY COUNTERS AND OSCILLATORS -SAGE ASYHONOUS BINAY COUNES AND OSCILLAOS SCLSB DECEMBE 82 EVISED MAY Allow Design of Either C or Crystal Oscillator Circuits Package Options Include Plastic Small-Outline (D) and Ceramic Flat (W) Packages,

More information

SN54HC164, SN74HC164 8-BIT PARALLEL-OUT SERIAL SHIFT REGISTERS

SN54HC164, SN74HC164 8-BIT PARALLEL-OUT SERIAL SHIFT REGISTERS SNH, SN7H -IT PLLEL-OUT SEIL SHIFT EGISTES SCLS DECEME 92 EVISED MY 997 ND-Gated (Enable/ Disable) Serial Inputs Fully uffered Clock and Serial Inputs Direct Clear Package Options Include Plastic Small-Outline

More information

SN54HCT273, SN74HCT273 OCTAL D-TYPE FLIP-FLOPS WITH CLEAR

SN54HCT273, SN74HCT273 OCTAL D-TYPE FLIP-FLOPS WITH CLEAR Inputs Are TTL-Voltage ompatible ontain Eight D-Type Flip-Flops Direct lear Input Applicatio Include: Buffer/Storage egisters Shift egisters Pattern Generators Package Optio Include Plastic Small-Outline

More information

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches with supplementary switches Rev. 03 16 December 2009 Product data sheet 1. General description 2. Features 3. Applications 4. Ordering information The is a dual 3-channel analog multiplexer/demultiplexer

More information

STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications

STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications Voltage detector with sense input and external delay capacitor Features Voltage monitored on separate sense input V SEN Factory-trimmed voltage thresholds in 100 mv increments from 1.6 V to 5.7 V ±2% voltage

More information

TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES

TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES TL0, TL0, TL0, TL0 P-MO NLOG WITCHE L0 D, JUNE 9 REVIED OCTOBER 9 witch ± 0-V nalog ignals TTL Logic Capability -to 0-V upply Ranges Low (00 Ω) On-tate Resistance High (0 Ω) Off-tate Resistance -Pin Functions

More information

SN54F251B, SN74F251B 1-OF-8 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS

SN54F251B, SN74F251B 1-OF-8 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS -State Versio of SNFB and SNFB -State Outputs Interface Directly ith System Bus Performs Parallel-to-Serial onversion omplementary Outputs Provide True and Inverted Data Package Optio Include Plastic Small-Outline

More information

CD74HC109, CD74HCT109

CD74HC109, CD74HCT109 Data sheet acquired from Harris Semiconductor SCHS140 March 1998 CD74HC109, CD74HCT109 Dual J-K Flip-Flop with Set and Reset Positive-Edge Trigger [ /Title (CD74H C109, CD74H CT109) /Subject Dual J- Fliplop

More information

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

CD74HC147, CD74HCT147

CD74HC147, CD74HCT147 Data sheet acquired from Harris Semiconductor SCHS149 September 1997 CD74HC147, CD74HCT147 High Speed CMOS Logic 10-to-4 Line Priority Encoder [ /Title (CD74 HC147, CD74 HCT14 7) /Subject (High Speed CMOS

More information

CD54/74AC153, CD54/74ACT153

CD54/74AC153, CD54/74ACT153 CD4/74AC13, CD4/74ACT13 Data sheet acquired from Harris Semiconductor SCHS237A September 1998 - Revised May 2000 Dual 4-Input Multiplexer Features Description [ /Title (CD74 AC13, CD74 ACT1 3) /Subject

More information

CD74HC151, CD74HCT151

CD74HC151, CD74HCT151 Data sheet acquired from Harris Semiconductor SCHS150 September 1997 CD74HC151, CD74HCT151 High Speed CMOS Logic 8-Input Multiplexer [ /Title (CD74H C151, CD74H CT151) /Subject High peed MOS ogic 8- nput

More information

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device. 74HC1G09 Rev. 02 18 December 2007 Product data sheet 1. General description 2. Features 3. Ordering information The 74HC1G09 is a high-speed Si-gate CMOS device. The 74HC1G09 provides the 2-input ND function

More information

2-input EXCLUSIVE-OR gate

2-input EXCLUSIVE-OR gate Rev. 01 7 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. Symmetrical output

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1. Rev. 01 3 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input OR function. Symmetrical output impedance

More information

SN54F280B, SN74F280B 9-BIT PARITY GENERATORS/CHECKERS

SN54F280B, SN74F280B 9-BIT PARITY GENERATORS/CHECKERS SN0, SN70 -T PRTY NRTORS/KRS SS00 3, PRL RVS OTOR 3 enerates ither Odd or ven Parity for Nine ata Lines ascadable for N-its Parity Package Options nclude Plastic Small-Outline Packages, eramic hip arriers,

More information

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers.

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers. Rev. 01 6 October 2006 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. The provides two buffers. Wide supply voltage range from 2.0

More information

XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger

XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger Rev. 01 31 ugust 2009 Product data sheet 1. General description 2. Features 3. pplications is a high-speed Si-gate CMOS device. It provides an inverting buffer function with Schmitt trigger action. This

More information

HEF4028B. 1. General description. 2. Features. 3. Applications. 4. Ordering information. BCD to decimal decoder

HEF4028B. 1. General description. 2. Features. 3. Applications. 4. Ordering information. BCD to decimal decoder Rev. 06 25 November 2009 Product data sheet 1. General description 2. Features 3. Applications The is a 4-bit, a 4-bit BCO to octal decoder with active LOW enable or an 8-output (Y0 to Y7) inverting demultiplexer.

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline

More information

CD74HC195. High Speed CMOS Logic 4-Bit Parallel Access Register. Features. Description. Ordering Information. PInout. [ /Title (CD74 HC195 ) /Subject

CD74HC195. High Speed CMOS Logic 4-Bit Parallel Access Register. Features. Description. Ordering Information. PInout. [ /Title (CD74 HC195 ) /Subject Data sheet acquired from Harris Semiconductor SCHS165 September 1997 High Speed CMOS Logic 4-Bit Parallel Access Register [ /Title (CD74 HC195 ) /Subject High peed MOS ogic -Bit aralel ccess egiser) /Autho

More information

The 74LV08 provides a quad 2-input AND function.

The 74LV08 provides a quad 2-input AND function. Quad 2-input ND gate Rev. 03 6 pril 2009 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC0

More information

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86. Rev. 04 20 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G86 and 74HCT1G86 are high-speed Si-gate CMOS devices. They provide a 2-input EXCLUSIVE-OR function.

More information

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1. Rev. 2 8 June 26 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2

More information

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02. Rev. 04 11 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a 2-input NOR function. The HC

More information

The 74LV32 provides a quad 2-input OR function.

The 74LV32 provides a quad 2-input OR function. Rev. 03 9 November 2007 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC32 and 74HCT32.

More information

CD74HC165, CD74HCT165

CD74HC165, CD74HCT165 Data sheet acquired from Harris Semiconductor SCHS156 February 1998 CD74HC165, CD74HCT165 High Speed CMOS Logic 8-Bit Parallel-In/Serial-Out Shift Register Features [ /Title (CD74H C165, CD74H CT165) /Subject

More information

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted

More information

74VHC08; 74VHCT08. The 74VHC08; 74VHCT08 provide the quad 2-input AND function.

74VHC08; 74VHCT08. The 74VHC08; 74VHCT08 provide the quad 2-input AND function. Rev. 0 30 June 2009 Product data sheet. General description 2. Features 3. Ordering information The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They

More information

CD74HC93, CD74HCT93. High Speed CMOS Logic 4-Bit Binary Ripple Counter. Description. Features. Pinout. Ordering Information

CD74HC93, CD74HCT93. High Speed CMOS Logic 4-Bit Binary Ripple Counter. Description. Features. Pinout. Ordering Information Data sheet acquired from Harris Semiconductor SCHS138 August 1997 CD74HC93, CD74HCT93 High Speed CMOS Logic 4-Bit Binary Ripple Counter [ /Title (CD74 HC93, CD74 HCT93 ) /Subject High peed MOS ogic -Bit

More information

The 74LVC1G02 provides the single 2-input NOR function.

The 74LVC1G02 provides the single 2-input NOR function. Rev. 07 18 July 2007 Product data sheet 1. General description 2. Features The provides the single 2-input NOR function. Input can be driven from either 3.3 V or 5 V devices. These features allow the use

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

5-stage Johnson decade counter

5-stage Johnson decade counter Rev. 06 5 November 2009 Product data sheet 1. General description The is a with ten spike-free decoded active HIGH outputs (Q0 to Q9), an active LOW carry output from the most significant flip-flop (Q5-9),

More information

The 74LVC1G11 provides a single 3-input AND gate.

The 74LVC1G11 provides a single 3-input AND gate. Rev. 0 September 200 Product data sheet 1. General description 2. Features The is a high-performance, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. The input

More information

INTEGRATED CIRCUITS. 74ALS138 1-of-8 decoder/demultiplexer. Product specification 1996 Jul 03 IC05 Data Handbook

INTEGRATED CIRCUITS. 74ALS138 1-of-8 decoder/demultiplexer. Product specification 1996 Jul 03 IC05 Data Handbook INTEGRATED CIRCUITS 1996 Jul 03 IC05 Data Handbook FEATURES Demultiplexing capability Multiple input enable for easy expansion Ideal for memory chip select decoding DESCRIPTION The decoder accepts three

More information

SN54HC74, SN74HC74 DUAL D-TYPE POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET SCLS094B DECEMBER 1982 REVISED MAY 1997

SN54HC74, SN74HC74 DUAL D-TYPE POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET SCLS094B DECEMBER 1982 REVISED MAY 1997 Package Optio Include Plastic Small-Outline (D), Shrink Small-Outline (DB), Thin Shrink Small-Outline (PW), and eramic Flat (W) Packages, eramic hip arriers (FK), and Standard Plastic (N) and eramic (J)

More information

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET Rev. 1 22 April 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This

More information

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide

More information

CD54/74HC393, CD54/74HCT393

CD54/74HC393, CD54/74HCT393 CD54/74HC393, CD54/74HCT393 Data sheet acquired from Harris Semiconductor SCHS186A September 1997 - Revised May 2000 High Speed CMOS Logic Dual 4-Stage Binary Counter /Title CD74 C393 D74 CT39 ) Subect

More information

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

More information

CD54/74HC151, CD54/74HCT151

CD54/74HC151, CD54/74HCT151 CD54/74HC151, CD54/74HCT151 Data sheet acquired from Harris Semiconductor SCHS150A September 1997 - Revised May 2000 High Speed CMOS Logic 8-Input Multiplexer [ /Title (CD74H C151, CD74H CT151) /Subject

More information

PHB108NQ03LT. N-channel TrenchMOS logic level FET

PHB108NQ03LT. N-channel TrenchMOS logic level FET Rev. 4 2 February 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

The 74HC21 provide the 4-input AND function.

The 74HC21 provide the 4-input AND function. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL).

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

INTEGRATED CIRCUITS. 74LV00 Quad 2-input NAND gate. Product specification Supersedes data of 1998 Apr 13 IC24 Data Handbook.

INTEGRATED CIRCUITS. 74LV00 Quad 2-input NAND gate. Product specification Supersedes data of 1998 Apr 13 IC24 Data Handbook. INTEGRATED CIRCUITS Supersedes data of 1998 Apr 13 IC24 Data Handbook 1998 Apr 20 FEATURES Wide operating voltage: 1.0 to 5.5 V Optimized for low voltage applications: 1.0 to 3.6 V Accepts TTL input levels

More information

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1. Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low

More information

N-channel TrenchMOS ultra low level FET. Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers

N-channel TrenchMOS ultra low level FET. Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers Rev. 4 24 February 29 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G) Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting

74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance

More information

BUK B. N-channel TrenchMOS standard level FET

BUK B. N-channel TrenchMOS standard level FET Rev. 4 24 September 28 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

74AHC1G00; 74AHCT1G00

74AHC1G00; 74AHCT1G00 74HC1G00; 74HCT1G00 Rev. 06 30 May 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G00 and 74HCT1G00 are high-speed Si-gate CMOS devices. They provide a 2-input

More information

CD54/74HC164, CD54/74HCT164

CD54/74HC164, CD54/74HCT164 Data sheet acquired from Harris Semiconductor SCHS155A October 1997 - Revised May 2000 CD54/74HC164, CD54/74HCT164 High Speed CMOS Logic 8-Bit Serial-In/Parallel-Out Shift Register Features Description

More information

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC

TIL308, TIL309 NUMERIC DISPLAYS WITH LOGIC SOLI-STTE ISPLYS WITH INTEGRL TTL MSI IRUIT HIP FOR USE IN LL SYSTEMS REQUIRING ISPLY OF B T 6,9-mm (0.270-Inch) haracter Height TIL308 Has Left ecimal TIL309 Has Right ecimal Easy System Interface Wide

More information

HIGH SPEED TRANSISTOR OPTOCOUPLERS

HIGH SPEED TRANSISTOR OPTOCOUPLERS DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection

More information

CD54/74HC30, CD54/74HCT30

CD54/74HC30, CD54/74HCT30 CD/7HC0, CD/7HCT0 Data sheet acquired from Harris Semiconductor SCHSA August 997 - Revised May 000 High Speed CMOS Logic 8-Input NAND Gate [ /Title (CDH C0, CD7H C0, CD7H CT0) /Subject High peed MOS ogic

More information

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING

More information

INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook.

INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook. INTEGRATED CIRCUITS Supersedes data of 1997 May 15 IC24 Data Handbook 1998 Jun 23 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for low voltage applications: 1.0V to 3.6V Accepts TTL input levels

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

74AHC1G14; 74AHCT1G14

74AHC1G14; 74AHCT1G14 Rev. 6 18 May 29 Product data sheet 1. General description 2. Features 3. pplications 74HC1G14 and 74HCT1G14 are high-speed Si-gate CMOS devices. They provide an inverting buffer function with Schmitt

More information

BUK A. N-channel TrenchMOS standard level FET

BUK A. N-channel TrenchMOS standard level FET Rev. 2 31 July 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

74AHC02; 74AHCT02. The 74AHC02; 74AHCT02 provides a quad 2-input NOR function.

74AHC02; 74AHCT02. The 74AHC02; 74AHCT02 provides a quad 2-input NOR function. Rev. 04 2 May 2008 Product data sheet. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). It is specified

More information

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 2 6 July 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17 DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS

More information

74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting

74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting 3-to-8 line decoder, demultiplexer with address latches; inverting Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible

More information

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 2 15 December 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS

More information

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces

More information

74AHC259; 74AHCT259. The 74AHC259; 74AHCT259 has four modes of operation:

74AHC259; 74AHCT259. The 74AHC259; 74AHCT259 has four modes of operation: Rev. 02 15 May 2008 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance

More information

PSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET

PSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET Rev. 1 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a

More information

60 V, 0.3 A N-channel Trench MOSFET

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package

More information

N-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage

N-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage Rev. 2 12 March 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

74AHC14; 74AHCT14. Hex inverting Schmitt trigger

74AHC14; 74AHCT14. Hex inverting Schmitt trigger Rev. 05 4 May 2009 Product data sheet. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). It is specified in compliance with

More information

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors Rev. 1 16 November 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS

More information

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced

More information

CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238

CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238 Data sheet acquired from Harris Semiconductor SCHS147C October 1997 - Revised August 2001 CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238 High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer

More information

8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground).

8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground). Rev. 04 12 January 2005 Product data sheet 1. General description 2. Features The is an with three address inputs (0 to 2), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and

More information

BCM857BV; BCM857BS; BCM857DS

BCM857BV; BCM857BS; BCM857DS BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated

More information

INTEGRATED CIRCUITS. 74LV273 Octal D-type flip-flop with reset; positive-edge trigger. Product specification 1997 Apr 07 IC24 Data Handbook

INTEGRATED CIRCUITS. 74LV273 Octal D-type flip-flop with reset; positive-edge trigger. Product specification 1997 Apr 07 IC24 Data Handbook INTEGRATED CIRCUITS Octal D-type flip-flop with reset; positive-edge trigger 1997 Apr 07 IC24 Data Handbook FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for Low Voltage applications: 1.0 to 3.6V

More information

PSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses

PSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses Rev. 1 16 June 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide

More information

April 2004 AS7C3256A

April 2004 AS7C3256A pril 2004 S7C3256 3.3V 32K X 8 CMOS SRM (Common I/O) Features Pin compatible with S7C3256 Industrial and commercial temperature options Organization: 32,768 words 8 bits High speed - 10/12/15/20 ns address

More information

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V

More information

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability

More information