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1 INTEGRATED CIRCUITS DATA SEET F a complete data sheet, please also download: The IC6 74C/CT/CU/CMOS ogic Family Specifications The IC6 74C/CT/CU/CMOS ogic Package Infmation The IC6 74C/CT/CU/CMOS ogic Package Outlines 74C/CT451 8-channel analog multiplexer/demultiplexer File under Integrated Circuits, IC6 December 199
2 8-channel analog multiplexer/demultiplexer 74C/CT451 FEATURES Wide analog input voltage range: ± 5V. ow ON resistance: 8 (typ.) at = V 7 (typ.) at = 6. V 6 (typ.) at = 9. V ogic level translation: to enable 5 V logic to communicate with ± 5 V analog signals Typical break befe make built in Output capability: non-standard I CC categy: MSI GENERA DESCRIPTION The 74C/CT451 are high-speed Si-gate CMOS devices and are pin compatible with the 451 of the QUICK REFERENCE DATA = GND = V; T amb =25 C; t r =t f = 6 ns 4B series. They are specified in compliance with JEDEC standard no. 7A. The 74C/CT451 are 8-channel analog multiplexers/demultiplexers with three digital select inputs (S to S 2 ), an active OW enable input (E), eight independent inputs/outputs (Y to Y 7 ) and a common input/output (Z). With E OW, one of the eight switches is selected (low impedance ON-state) by S to S 2. With E IG, all switches are in the high impedance OFF-state, independent of S to S 2. and GND are the supply voltage pins f the digital control inputs (S to S 2, and E). The to GND ranges are 2. to 1. V f C and to 5.5 V f CT. The analog inputs/outputs (Y to Y 7, and Z) can swing between as a positive limit and as a negative limit. may not exceed 1. V. F operation as a digital multiplexer/demultiplexer, is connected to GND (typically ground). TYPICA SYMBO PARAMETER CONDITIONS C CT UNIT t PZ / t PZ turn ON time C = 15 pf; R =1k; E to V os =5V ns S n to V os 2 24 ns t PZ / t PZ turn OFF time E to V os ns S n to V os 19 2 ns C I input capacitance pf C PD power dissipation capacitance per switch notes 1 and pf C S max. switch capacitance independent (Y) 5 5 pf common (Z) pf Notes 1. C PD is used to determine the dynamic power dissipation (P D in µw): P D =C PD V 2 CC f i + { (C +C S ) V 2 CC f o } where: f i = input frequency in Mz f o = output frequency in Mz {(C + C S ) V 2 CC f o } = sum of outputs C = output load capacitance in pf C S = max. switch capacitance in pf = supply voltage in V 2. F C the condition is V I = GND to F CT the condition is V I = GND to 1.5 V December 199 2
3 74C/CT451 ORDERING INFORMATION See 74C/CT/CU/CMOS ogic Package Infmation. PIN DESCRIPTION PIN NO. SYMBO NAME AND FUNCTION 3 Z common input/output 6 E enable input (active OW) 7 negative supply voltage 8 GND ground ( V) 11, 1, 9 S to S 2 select inputs 13, 14, 15, 12, 1, 5, 2, 4 Y to Y 7 independent inputs/outputs 16 positive supply voltage Fig.1 Pin configuration. Fig.2 ogic symbol. Fig.3 IEC logic symbol. December 199 3
4 74C/CT451 APPICATIONS Analog multiplexing and demultiplexing Digital multiplexing and demultiplexing Signal gating FUNCTION TABE INPUTS E S 2 S 1 S Notes 1. = IG voltage level = OW voltage level X = don t care channel ON Y Z Y 1 Z Y 2 Z Y 3 Z Y 4 Z Y 5 Z Y 6 Z Y 7 Z X X X none Fig.4 Functional diagram. Fig.5 Schematic diagram (one switch). December 199 4
5 74C/CT451 RATINGS imiting values in accdance with the Absolute Maximum System (IEC 134) Voltages are referenced to = GND (ground =V) SYMBO PARAMETER MIN. MAX. UNIT CONDITIONS DC supply voltage V ±I IK DC digital input diode current 2 ma f V I <.5 V V I > +.5 V ±I SK DC switch diode current 2 ma f V S <.5 V V S > +.5 V ±I S DC switch current 25 ma f.5 V < V S < +.5 V ±I EE DC current 2 ma ±I CC ; ±I GND DC GND current 5 ma T stg stage temperature range C P tot power dissipation per package f temperature range: 4 to +125 C 74C/CT plastic DI 75 mw above +7 C: derate linearly with 12 mw/k plastic mini-pack (SO) 5 mw above +7 C: derate linearly with 8 mw/k P S power dissipation per switch 1 mw Note to ratings 1. To avoid drawing current out of terminal Z, when switch current flows in terminals Y n, the voltage drop across the bidirectional switch must not exceed.4 V. If the switch current flows into terminal Z, no current will flow out of terminals Y n. In this case there is no limit f the voltage drop across the switch, but the voltages at Y n and Z may not exceed. RECOMMENDED OPERATING CONDITIONS SYMBO PARAMETER 74C 74CT min. typ. max. min. typ. max. UNIT CONDITIONS DC supply voltage GND V see Figs 6 and 7 DC supply voltage V see Figs 6 and 7 V I DC input voltage range GND GND V V S DC switch voltage range V T amb T amb t r, t f operating ambient temperature range operating ambient temperature range input rise and fall times C C ns see DC and AC CARACTERISTICS = 2. V = V = 6. V = 1. V December 199 5
6 74C/CT451 Fig.6 Guaranteed operating area as a function of the supply voltages f 74C451. Fig.7 Guaranteed operating area as a function of the supply voltages f 74CT451. DC CARACTERISTICS FOR 74C/CT F 74C: GND = 2.,, 6. and 9. V F 74CT: GND = and 5.5 V; = 2.,, 6. and 9. V SYMBO PARAMETER R ON ON resistance (peak) R ON ON resistance (rail) R ON ON resistance (rail) R ON maximum ON resistance between any two channels T amb ( C) 74C/CT to to +125 min. typ. max. min. max. min. max UNIT TEST CONDITIONS I S (µa) V is to to V I V I V I V I V I V I V I V I V I Notes to DC characteristics 1. At supply voltages ( ) approaching 2. V the analog switch ON-resistance becomes extremely non-linear. Therefe it is recommended that these devices be used to transmit digital signals only, when using these supply voltages. 2. F test circuit measuring R ON see Fig.8. December 199 6
7 74C/CT451 DC CARACTERISTICS FOR 74C Voltages are referenced to GND (ground = V) T amb ( C) TEST CONDITIONS SYMBO PARAMETER 74C to to +125 UNIT V i OTER min. typ. max. min. max. min. max. V I IG level input voltage V V I OW level input voltage V ± I I input leakage current µa GND ± I S analog switch OFF-state current per channel µa 1. V I V I V S = Fig.1 ± I S analog switch OFF-state current all channels µa 1. V I V I V S = Fig.1 ± I S analog switch ON-state current µa 1. V I V I V S = Fig.11 I CC quiescent supply current µa GND V is = ; V os = December 199 7
8 74C/CT451 AC CARACTERISTICS FOR 74C GND = V; t r =t f = 6 ns; C =5pF T amb ( C) TEST CONDITIONS SYMBO PARAMETER 74C to to +125 min. typ. max. min. max. min. max. UNIT OTER t P / t P t PZ / t PZ t PZ / t PZ t PZ / t PZ t PZ / t PZ propagation delay 14 V is to V os turn ON time 72 E to V os turn ON time 66 S n to V os turn OFF time 58 E to V os turn OFF time 61 S n to V os ns ns ns ns ns R = ; C =5pF (see Fig.17) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) December 199 8
9 74C/CT451 DC CARACTERISTICS FOR 74CT Voltages are referenced to GND (ground = ) T amb ( C) TEST CONDITIONS SYMBO PARAMETER 74CT to to +125 UNIT V i OTER min. typ. max. min. max. min. max. V I V I IG level input voltage OW level input voltage ± I I input leakage current ± I S analog switch OFF-state current per channel ± I S analog switch OFF-state current all channels ± I S analog switch ON-state current I CC quiescent supply current I CC additional quiescent supply current per input pin f unit load coefficient is 1 (note 1) V to V to µa 5.5 GND µa 1. V I V I µa 1. V I V I µa 1. V I V I µa µa to GND 2.1 V V S = (see Fig.1) V S = (see Fig.1) V S = (see Fig.11) V is = ; V os = other inputs at GND Note to CT types 1. The value of additional quiescent supply current ( I CC ) f a unit load of 1 is given here. To determine I CC per input, multiply this value by the unit load coefficient shown in the table below. INPUT S n E UNIT OAD COEFFICIENT.5.5 December 199 9
10 74C/CT451 AC CARACTERISTICS FOR 74CT GND = V; t r =t f = 6 ns; C =5pF T amb ( C) TEST CONDITIONS SYMBO PARAMETER 74CT to to +125 min. typ. max. min. max. min. max. UNIT OTER t P / t P t PZ / t PZ t PZ / t PZ t PZ / t PZ t PZ / t PZ propagation 5 delay V is to V os 4 turn ON time 26 E to V os 16 turn ON time 28 S n to V os 16 turn OFF 19 time E to V os 16 turn OFF 23 time S n to V os ns ns ns ns ns R = ; C =5pF (see Fig.17) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) R =1k; C =5pF (see Fig.18, 19 and 2) Fig.8 Test circuit f measuring R ON. Fig.9 Typical R ON as a function of input voltage V is f V is = to. December 199 1
11 74C/CT451 Fig.1 Test circuit f measuring OFF-state current. Fig.11 Test circuit f measuring ON-state current. December
12 74C/CT451 ADDITIONA AC CARACTERISTICS FOR 74C/CT Recommended conditions and typical values GND = V; T amb =25 C SYMBO PARAMETER typ. UNIT V is(pp) CONDITIONS V (pp) f max C S sine-wave disttion f = 1 kz sine-wave disttion f = 1 kz switch OFF signal feed-through crosstalk voltage between control and any switch (peak-to-peak value) minimum frequency response (3dB) maximum switch capacitance independent (Y) common (Z) % % % % db db mv mv Mz Mz pf pf note 1 note 2 R =1k; C =5pF (see Fig.14) R =1k; C =5pF (see Fig.14) R = 6 ; C =5pF (see Figs 12 and 15) R = 6 ; C = 5 pf; f = 1 Mz (E S n, square-wave between and GND, t r =t f = 6 ns) (see Fig.16) R =5;C = 1 pf (see Fig.13 and 14) Notes to AC characteristics 1. Adjust input voltage V is to dbm level ( dbm = 1 mw into 6 ). 2. Adjust input voltage V is to dbm level at V os f 1 Mz ( dbm = 1 mw into 5 ). General note V is is the input voltage at a Y n Z terminal, whichever is assigned as an input. V os is the output voltage at a Y n Z terminal, whichever is assigned as an output. Test conditions: = V; GND = V; = V; R =5; R source =1k Fig.12 Typical switch OFF signal feed-through as a function of frequency. December
13 74C/CT451 Test conditions: = V; GND = V; = V; R =5; R source =1k Fig.13 Typical frequency response. Fig.14 Test circuit f measuring sine-wave disttion and minimum frequency response. Fig.15 Test circuit f measuring switch OFF signal feed-through. The crosstalk is defined as follows (oscilloscope output): Fig.16 Test circuit f measuring crosstalk between control and any switch. December
14 74C/CT451 AC WAVEFORMS Fig.17 Wavefms showing the input (V is ) to output (V os ) propagation delays. (1) C : V M = 5%; V I = GND to. CT: V M = 1.3 V; V I = GND to 3 V. Fig.18 Wavefms showing the turn-on and turn-off times. December
15 74C/CT451 TEST CIRCUIT AND WAVEFORMS Conditions t PZ t PZ t PZ t PZ others TEST SWITC V is open pulse t r ; t f FAMIY AMPITUDE V M f max ; PUSE WIDT 74C 74CT 3. V 5% 1.3 V < 2ns <2ns OTER 6ns 6ns C = load capacitance including jig and probe capacitance (see AC CARACTERISTICS f values). R T = termination resistance should be equal to the output impedance Z O of the pulse generat. t r =t f = 6 ns; when measuring f max, there is no constraint to t r, t f with 5% duty fact. Fig.19 Test circuit f measuring AC perfmance. Conditions t PZ t PZ t PZ t PZ others TEST SWITC V is open pulse t r ; t f FAMIY AMPITUDE V M f max ; PUSE WIDT 74C 74CT 3. V 5% 1.3 V < 2ns <2ns OTER 6ns 6ns C = load capacitance including jig and probe capacitance (see AC CARACTERISTICS f values). R T = termination resistance should be equal to the output impedance Z O of the pulse generat. t r =t f = 6 ns; when measuring f max, there is no constraint to t r, t f with 5% duty fact. Fig.2 Input pulse definitions. December
16 74C/CT451 PACKAGE OUTINES See 74C/CT/CU/CMOS ogic Package Outlines. December
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