Reactivated after 17 Jan and may be used for new and existing designs and acquisitions.

Transcription

1 C-POUND MI-M-38510/ January 2006 SUPERSEDG MI-M-38510/ January 1988 MIITRY SPECIFICTION MICROCIRCUITS, DIGIT, IG-SPEED CMOS, FIP-FOPS, MONOITIC SIICON, POSITIVE OGIC This specification is approved for use by all Departments and gencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MI-PRF SCOPE Reactivated after 17 Jan and may be used for new and existing designs and acquisitions. 1.1 Scope. This specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part or identifying number (P). For this product, the requirements of MI-M have been superseded by MI-PRF (see 6.3). 1.2 Part or identifying number (P). The P is in accordance with MI-PRF and as specified herein Device types. The device types are as follows: Device type Circuit 01 Dual JK flip-flop with clear 02 Dual D positive-edge triggered flip-flop with clear and preset 03 Dual JK negative-edge triggered flip-flop with clear 04 Dual JK positive-edge triggered flip-flop with clear and preset 05 Dual JK negative-edge triggered flip-flop with clear and preset 06 Quad D-type flip-flop with 3-state outputs and clear 07 ex D-type flip-flop with clear 08 Quad D-type flip-flop with clear 52 Dual D-type positive-edge triggered flip-flop with clear and preset, TT compatible inputs Device class. The device class is the product assurance level as defined in MI-PRF Case outlines. The case outlines are as designated in MI-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, TTN: DSCC-VC, P.O. ox 3990, Columbus, O , or CMOS@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the SSIST Online database at MSC N/ FSC 5962

2 MI-M-38510/ bsolute maximum ratings. Supply voltage range (V CC ) V dc to +7.0 V dc DC input voltage range (V ) V dc to V CC V dc DC output voltage range (V ) V dc to V CC V dc Clamp diode current (I IK, I OK )... ±20 m DC output current per pin (I )... ±25 m (±35 m for device type 06) DC V CC or current per pin (I CC, I )... ±50 m (±70 m for device type 06) Storage temperature range (T STG ) C to +150 C Maximum power dissipation (P D ): Device types 01-05, 07, 08, mw Device type mw ead temperature (soldering, 10 seconds) C Thermal resistance, junction to case (θ JC )... See MI-STD-1835 Junction temperature (T J ) C 1.4 Recommended operating conditions. Device types 01 to 08: Maximum input low voltage (V I ) V at V CC = 2.0 V 0.9 V at V CC = 4.5 V 1.2 V at V CC = 6.0 V Minimum input high voltage (V I ) V at V CC = 2.0 V 3.15 V at V CC = 4.5 V 4.2 V at V CC = 6.0 V Supply voltage range (V CC ) V dc to 6.0 V dc Output voltage range (V ) V to V CC Operating temperature range (T C ) C to +125 C Maximum input rise and fall times (t r, t f ): V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Width of clock pulse (t p clock) V CC = 4.5 V: Device types 01, 03, 04, 06, ns minimum Device types 02, ns minimum Device type ns minimum Width of clear pulse (t p clear): Device types 01, 02, 03, 04, 05, ns minimum Device types 07, ns minimum Width of preset pulse (t p preset): Device types 02, 04, ns minimum Data setup time before clock (t setup ): Device types ns minimum Clear or preset setup time before clock (t rem ): Device types 01, 03, 04, 05, 07, ns minimum Device type ns minimum Device type ns minimum old time (t hold ): Device types ns minimum 2

3 1.4 Recommended operating conditions Continued. Device type 52: MI-M-38510/653 Maximum input low voltage (V I ) V at V CC = 4.5 V to 5.5 V Minimum input high voltage (V I ) V at V CC = 4.5 V to 5.5 V Supply voltage range (V CC ) V dc to 5.5 V dc Output voltage range (V ) V dc to V CC Operating ambient temperature range (T ) C to +125 C Width of clock pulse (t p clock) ns minimum Width of clear pulse (t p clear) ns minimum Width of preset pulse (t p preset) ns minimum Data setup time before clock (t setup ) ns minimum t rem setup time before clock (t su clear or t su preset) ns minimum old time (t hold )... 3 ns minimum Input rise and fall times (t r, t f ): V CC = 4.5 V ns maximum 2. PPICE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPRTMENT OF DEFENSE SPECIFICTION MI-PRF Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPRTMENT OF DEFENSE STNDRDS MI-STD Test Method Standard Microcircuits. MI-STD Interface Standard Electronic Component Case Outlines. (Copies of these documents are available online at or or from the Standardization Document Order Desk, 700 Robbins venue, uilding 4D, Philadelphia, P ) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3

4 MI-M-38510/ REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.4). 3.2 Item requirements. The individual item requirements shall be in accordance with MI-PRF and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MI-PRF and herein ogic diagrams and terminal connections. The logic diagrams and terminal connections shall be as specified on figure Truth tables. The truth tables shall be as specified on figure Switching test circuit and waveforms. The switching test circuit and waveforms shall be as specified on figure Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity or preparing activity upon request Case outlines. The case outlines shall be as specified in and MI-STD ead material and finish. The lead material and finish shall be in accordance with MI-PRF (see 6.6). 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in table I, and apply over the full recommended ambient operating temperature range. 3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MI-PRF Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 38 (see MI-PRF-38535, appendix ). 4. VERIFICTION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MI-PRF or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MI-PRF and shall be conducted on all devices prior to qualification and conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MI-PRF The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review oard (TR) in accordance with MI-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MI-STD-883. b. Delete the sequence specified as interim (pre-burn-in) electrical parameters through interim (post-burn-in) electrical parameters of table I of MI-PRF and substitute lines 1 through 7 of table II herein. c. urn-in (method 1015 of MI-STD-883). 4

5 MI-M-38510/653 (1) Unless otherwise specified in the manufacturers QM plan for static tests (test condition ), ambient temperature (T ) shall be +125 C minimum. Test duration for each static test shall be 24 hours minimum for class S devices and in accordance with table I of method 1015 for class devices. i. For static burn-in I, all inputs shall be connected to. Outputs shall be open or connected to V CC /2. Resistors are optional on outputs if open. Resistors are required on inputs and on outputs connected to V CC /2. R = 470Ω to 47 kω. ii. For static burn-in II, all inputs shall be connected through a resistor to V CC. Outputs shall be open or connected to V CC /2. Resistors are optional on outputs if open. Resistors are required on inputs and on outputs connected to V CC /2. R = 470Ω to 47 kω. (2) Unless otherwise specified in the manufacturers QM plan for dynamic test (test condition D), ambient temperature shall be +125 C minimum. Test duration shall be in accordance with table I of method i. For dynamic burn-in, the generator shall be connected to the clock and J K or D (depending on device type) inputs and reset shall be connected to clock/2. Outputs shall be connected to V CC / V through the resistors. R = 680Ω to 1 kω for outputs, 470Ω to 47 kω for inputs. ii. CP = 25 kz to 1 Mz square wave; duty cycle = 50% ±15%; V I = 4.5 V to V CC ; V I = 0.0 V ±0.5 V; transition time 0.5 µs. iii. V CC = 6.0 V +0.0 V, -0.5 V. V CC = 5.5 V +0.0 V, -0.5 V for device type 52. d. Interim and final electrical test parameters shall be as specified in table II. e. For class S devices, post dynamic burn-in, or class devices, post static burn-in, electrical parameter measurements may, at the manufacturer s option, be performed separately or included in the final electrical parameter requirements Percent defective allowable (PD). a. The PD for class S devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the exact number of devices submitted to each separate burn-in. b. Static burn-in I and II failure shall be cumulative for determining the PD. c. The PD for class devices shall be in accordance with MI-PRF for static burn-in. Dynamic burn-in is not required. d. Those devices whose measured characteristics, after burn-in, exceed the specified delta ( ) limits or electrical parameter limits specified in table III, subgroup 1, are defective and shall be removed from the lot. The verified failures divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PD. 5

6 igh-level output voltage ow-level output Voltage MI-M-38510/653 TE I. Electrical performance characteristics. Test Symbol Conditions T C = +125 C V O1 2/ V O2 2/ V O3 V O4 2/ V O5 V O6 V O7 V O1 2/ V O2 2/ V O3 V O4 2/ V O5 unless otherwise specified V I = 1.5 V; V I = 0.3 V I O = -20 µ V I = 3.15 V; V I = 0.9 V I O = -20 µ V I = 4.2 V; V I = 1.2 V I O = -20 µ V I = 3.15 V; V I = 0.9 V I O = -4.0 m V I = 4.2 V V I = 1.2 V I O = -5.2 m Device type V CC imits Min Max Unit ll 2.0 V 1.95 V ll 4.5 V 4.45 V ll 6.0 V 5.95 V ll 4.5 V 3.7 V 01,02 03,04 05,07,08 I O = -7.8 m 06 V I = 2.0 V; V I = 0.8 V I O = -20 µ V I = 2.0 V; V I = 0.8 V I O = -4.0 m V I = 0.3 V; V I = 1.5 V I O = 20.0 µ V I = 0.9 V; V I = 3.15 V I O = 20.0 µ V I = 1.2 V; V I = 4.2 V I O = 20.0 µ V I = 0.9 V; V I = 3.15 V I O = 4.0 m V I = 1.2 V V I = 4.2 V I O = 5.2 m 6.0 V 5.2 V V 4.40 V V 3.70 V ll 2.0 V 0.05 V ll 4.5 V 0.05 V ll 6.0 V 0.05 V ll 4.5 V 0.4 V 01,02 03,04 05,07, V 0.4 V I O = 7.8 m 06 V O6 V I = 0.8 V; V I = 2.0 V V 0.05 V I O = 20 µ V O7 V I = 0.8 V; V I = 2.0 V V 0.4 V I O = 4.0 m Positive input clamp V IC+ I = 1 m ll 1.5 V voltage Negative input clamp V IC- I = -1 m ll OPEN -1.5 V voltage Input current low I I V = V -0.1 µ V Input current high I I V = V CC V 0.1 µ V See footnotes at end of table. 6

7 Short circuit output current dditional supply current quiescent per input pin (one unit load) Quiescent supply current MI-M-38510/653 TE I. Electrical performance characteristics Continued. Test Symbol Conditions T C = +125 C I OS1 2/ I OS2 2/ I OS3 2/ I OS4 I OS5 2/ I CC 3/ I CC unless otherwise specified V O = V I = For all inputs, V I = 0.4 V and V I = 2.4 V Test pin at V = 2.4 V When not being tested, control pins at V I = V CC and V I = I O = 0 µ V = 6.0 V Device type , ,08, , ,08,52 06 V CC 2.0 V V V V -10 imits Min Max V Unit m V 3.0 m V I CCZ V = 6.0 V V 10 µ µ Three-state output leakage current low Three-state output leakage current high Control input capacitance I OZ I OZ V = OC = V I V = V CC OC = V I V -2.0 µ V +2.0 µ C C ll 15 pf Input capacitance C I ll 10 Three-state output capacitance C O V 20 Power dissipation C PD capacitance 2/ Maximum clock f MX C = 50 pf ± 10% 01, V 23 frequency 6/ 04, , pf Mz See footnotes at end of table. 7

8 MI-M-38510/653 TE I. Electrical performance characteristics Continued. Test Symbol Conditions T C = +125 C Propagation delay time, low to high level, CK to Q Propagation delay time, high to low level, CK to Q Propagation delay time, low to high level, CK or PRE to Q or Q Propagation delay time, high to low level, CK or PRE to Q or Q Enable time to high or low level Disable time to high or low level Transition time, low to high level or high to low level t P1 t P1 t P2 t P2 t PZ or t PZ t PZ or t PZ t T or t T unless otherwise specified C = 50 pf ± 10% 8/ Device type V CC imits Min Max 02, V , , , , , ,08, Unit ns Complete terminal conditions shall be as specified in table III. 2/ Guaranteed but not tested. 3/ Total supply current = I CC + I CC. I OZ sets internal D flip-flops to high state. I OZ sets internal D flip-flops to low state. Power dissipation capacitance (C PD ) per flip-flop. 6/ See the formula for determining maximum frequencies shown in table I. Tested at V CC = 4.5 V at +125 C for sample testing and V CC = 4.5 V and +25 C for screening. Guaranteed at other V CC voltages and temperatures. See tables I and I (as appropriate) and the exception in 4.4.1d. 8/ For propagation and transition delay times at V CC = 2.0 V, increase limit by a factor of 5. For propagation and transition delay times at V CC = 6.0 V, decrease limit by a factor of

9 MI-M-38510/653 TE I. Calculated f MX at -55 C /+25 C case temperature. V CC 2.0 V 4.5 V 6.0 V +125 C 0.2X X = X T C -55 C /+25 C 0.2Y 1.33X = Y 1.18Y NOTE: Normalized numbers (+125 C = 1). The 2.0 V and 6.0 V numbers are derived from their 4.5 V integer value (rounding off according 4). TE I. Calculated dynamic values at 55 C/+25 C, case temperature. V CC 2.0 V 4.5 V 6.0 V +125 C T C -55 C or +25 C 5 x x 0.75 NOTE: Normalized numbers (+125 C = 1). The 2.0 V and 6.0 V numbers are derived from their 4.5 V integer value (rounding off according 4). 9

10 ine no. MI-PRF test requirements Ref. par. MI-M-38510/653 Class S device Class device Table III Table IV Ref. Table III subgroups delta limits par. subgroups 2/ 3/ 2/ 1 1 Table IV delta 3/ 1 Interim electrical parameters 2 Static burn-in I 4.2c Req d Not req d (method 1015) Same as line 1 1* 4 Static burn-in II 4.2c Req d 4.2c (method 1015) req d 5 Same as line 1 4.2e 1* 4.2e 1* 6 Dynamic burn-in 4.2c Req d Not req d (method 1015) Same as line 1 4.2e 1 8 Final electrical * 1, 2, 3, 7, 8, 1*, 2, 7, 9 parameters 9 9 Group test , 2, 3, 4, 7, , 2, 3, 4, 7, 8, requirements 8, 9, 10, 11 9, 10, Group test , 2, 3, 7, 8, when using 9, 10, 11 method 5005 QCI option 11 Group C endpoint electrical parameters 12 Group D endpoint electrical parameters , 2, 3, 7, 8, 9, 10, 11 lank spaces indicate tests are not applicable. 2/ * indicates PD applies to subgroup 1 (see 4.2.1) , , 2, , 2 3/ indicates delta limits shall be required only on table III subgroup 1, where specified, and the delta values shall be computed with reference to the previous interim electrical parameters. The device manufacturer may, at his option, either complete subgroup 1 electrical parameter measurements, including delta measurements, within 96 hours after burn-in completion (removal of bias); or may complete subgroup 1 electrical measurements without delta measurements within 24 hours after burn-in completion (removal of bias). 10

11 MI-M-38510/653 FIGURE 1. ogic diagrams and terminal connections (top views). 11

12 MI-M-38510/653 FIGURE 1. ogic diagrams and terminal connections (top views) Continued. 12

13 MI-M-38510/653 FIGURE 1. ogic diagrams and terminal connections (top views) Continued. 13

14 MI-M-38510/653 FIGURE 1. ogic diagrams and terminal connections (top views) Continued. 14

15 MI-M-38510/653 Device type 01 Inputs Outputs CR CK J K Q Q X X X Q0 Q0 Toggle X X Q0 Q0 Device types 02 and 52 Inputs Outputs PRE CR CK D Q Q X X X X X X * * X X Q0 Q0 Device type 03 Inputs Outputs CR CK J K Q Q X X X Q0 Q0 Toggle X X Q0 Q0 Device type 04 Inputs Outputs PRE CR CK J K Q Q X X X X X X X X X * * Toggle Q0 Q0 X X Q0 Q0 * = This configuration is nonstable X = Pins have no effect on output = igh level voltage = ow level voltage = ow-to-high transition of the clock = igh-to-low transition of the clock Q0 (Q0) = The level of Q (Q) before the indicated steady-state input conditions were established FIGURE 2. Truth tables. 15

16 MI-M-38510/653 Device type 05 Inputs Ouputs PRE CR CK J K Q Q X X X X X X X X X * * Q0 Q0 Toggle X X Q0 Q0 Device type 06 Inputs Data enable Data Output CR CK E1 E2 D Q X X X X X X X Q0 X X Q0 X X Q0 For device type 06: When either OE1 or OE2 (or both) is (are) high, the output is disabled to the high-z state; however, sequential operation of the flip-flops is not affected. Device type 07 Inputs Output CR CK D Q X X X Q0 Device type 08 Inputs Outputs CR CK D Q Q X X X Q0 Q0 * = This configuration is nonstable X = Pins have no effect on output = igh level voltage = ow level voltage = ow-to-high transition of the clock = igh-to-low transition of the clock Q0 (Q0) = The level of Q (Q) before the indicated steady-state input conditions were established FIGURE 2. Truth tables Continued. 16

17 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 27 ns. 2. J or K input pulse characteristics: t r = t f 6 ns; t setup 30ns; t hold 8 ns; t p (data) 38 ns. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 22 ns; PRR 23 Mz. 4. C = 50 pf ±10 % (includes test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T2 t T1 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 01). 17

18 MI-M-38510/653 NOTES: 1. CER pulses dominate regardless of the state of the other inputs. 2. CER input pulse characteristics are as follows: t r = t f 6 ns; t p (clear) 30 ns; t REM 30 ns. 3. C = 50 pf ±10 % (includes test jig and probe capacitance). 4. Clock pulse prior to test with inputs biased to place output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER switching test circuit and waveforms (device type 01) Continued. 18

19 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 30 ns. 2. Data input pulse characteristics: : t r = t f 6 ns; t p (data) 38 ns; (for device type 52), t p (data) 33 ns; t setup 30 ns; t hold 8 ns. (for device type 52), t hold 3 ns; PRR 1 Mz. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 24 ns; PRR 21 Mz. 4. C = 50 pf ±10% (including test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. The input signal(s) for CT device type 52 will be 0 V to 3 V; however, the 50 % V CC measuring point is 1.3 V for input and output. 6. t T = t T1 t T2 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device types 02 and 52) - Continued. 19

20 MI-M-38510/653 NOTES: 1. CER and PRESET pulses are active low and dominate regardless of the state of the clock and data inputs. 2. CER or PRESET input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) = t p (PRESET) 30 ns; t REM 38 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. While testing the CER input at a logic 0 level, PRESET will have a logic 1 level applied. While testing the PRESET input at a logic level 0, CER will have a logic 1 applied. 5. Voltage measurements are to be made with respect to the network ground terminal. The input signal(s) for CT device type 52 will be 0 V to 3 V; however, the 50 % measurements point is 1.3 V for inputs and outputs. FIGURE 3. CER switching test circuit and waveforms (device types 02 and 52) - Continued. 20

21 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 27 ns. 2. J or K input pulse characteristics: t r = t f 6 ns; t p (J or K) 38 ns; t hold 8 ns; t setup 30 ns; PRR 1 Mz. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 22 ns; PRR 23 Mz. 4. C = 50 pf ±10% (including test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T2 t T1 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 03) - Continued. 21

22 MI-M-38510/653 NOTES: 1. CER pulses dominate regardless of the state of the other inputs. 2. CER input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) 30 ns; t REM 30 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. Clock pulse prior to test with inputs biased to place the output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER switching test circuit and waveforms (device type 03) - Continued. 22

23 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 27 ns. 2. J or K input pulse characteristics: t r = t f 6 ns; t p (J or K) 38 ns; t hold 8 ns; t setup 30 ns. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 22 ns; PRR 23 Mz. 4. C = 50 pf ±10% (including jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T2 t T1 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 04) - Continued. 23

24 MI-M-38510/653 NOTES: 1. CER and PRESET pulses are active low and dominate regardless of the state of the other inputs. 2. CER and PRESET input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) = t p (PRESET) 30 ns; t REM 30 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. May be pulsed prior to test with inputs biased to place output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER and PRESET switching test circuit and waveforms (device type 04) - Continued. 24

25 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 30 ns. 2. J or K input pulse characteristics: t r = t f 6 ns; t p (J or K) 38 ns; t hold 8 ns; t setup 30 ns. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 24 ns; PRR 21 Mz. 4. C = 50 pf ±10 % (including test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T2 t T1 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 05) - Continued. 25

26 MI-M-38510/653 NOTES: 1. CER and PRESET pulses are active low and dominate regardless of the state of the other inputs. 2. CER and PRESET input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) = t p (PRESET) 30 ns; t REM 30 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. May be pulsed prior to test with inputs biased to place output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER and PRESET switching test circuit and waveforms (device type 05) - Continued. 26

27 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 27 ns. 2. Data input pulse characteristics: t r = t f 6 ns; t p (data) 38 ns; t setup 30 ns; t hold 8 ns; PRR 1 Mz. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 22 ns; PRR 23 Mz. 4. C = 50 pf ±10 % (including test jig and probe capacitance). 5. t T = t T1 t T2 ; t T = t T2 - t T1. 6. Voltage measurements are to be made with respect to network ground terminal. FIGURE 3. Synchronous switching test circuit and waveforms (device type 06) - Continued. 27

28 MI-M-38510/653 NOTES: 1. OE1 and OE2 pulses are active low and one or both must be active to enable the outputs. 2. OE1 and OE2 input pulse characteristics are as follows: t r = t f 6 ns; t poe1 = t poe2 200 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. OE1 or OE2 does not affect the sequential operation of the flip-flop. 5. For t PZ and t PZ, a 1 kω resistor is connected between the output and the terminal. For t PZ and t PZ, a 1 kω resistor is connected between the output and the V CC terminal. V S1 = V O +0.1 V (V O -V O ). V S2 = V O 0.1 V (V O -V O ). FIGURE 3. Three-state switching test circuit and waveforms (device type 06) - Continued. 28

29 MI-M-38510/653 NOTES: 1. CER pulses are active high and dominate regardless of the state of the clock and data inputs. 2. CER input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) 30 ns; t REM 27 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. Clock pulse prior to test with inputs biased to place output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER switching test circuit and waveforms (device type 06) - Continued. 29

30 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 27 ns. 2. Data input pulse characteristics: t r = t f 6 ns; t p (data) 38 ns; t setup 30 ns; t hold 8 ns. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 22 ns; PRR 23 Mz. 4. C = 50 pf ±10 % (including test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T1 t T2 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 07) - Continued. 30

31 MI-M-38510/653 NOTES: 1. CER pulses are active low and dominate regardless of the state of the clock and data inputs. 2. CER input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) 24 ns; t REM 30 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. Clock pulse prior to test with inputs biased to place the output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER switching test circuit and waveforms (device type 07) - Continued. 31

32 MI-M-38510/653 NOTES: 1. Clock input pulse characteristics: t r = t f 6 ns; t p (clock) 24 ns. 2. Data input pulse characteristics: t r = t f 6 ns; t p (data) 38 ns; t setup 30 ns; t hold 8 ns. 3. The clock input characteristics for f MX are as follows: t r = t f 6 ns; t p (clock) 19 ns; PRR 26 Mz. 4. C = 50 pf ±10 % (including test jig and probe capacitance). 5. Voltage measurements are to be made with respect to network ground terminal. 6. t T = t T1 t T2 ; t T = t T2 - t T1. FIGURE 3. Synchronous switching test circuit and waveforms (device type 08) - Continued. 32

33 MI-M-38510/653 NOTES: 1. CER pulses are active low and dominate regardless of the state of the clock and data inputs. 2. CER input pulse characteristics are as follows: t r = t f 6 ns; t p (CER) 24 ns; t REM 30 ns. 3. C = 50 pf ±10 % (including test jig and probe capacitance). 4. Clock pulse prior to test with inputs biased to place the output at the appropriate level for test. 5. Voltage measurements are to be made with respect to the network ground terminal. FIGURE 3. CER switching test circuit and waveforms (device type 08) - Continued. 33

34 34 TE III. Group inspection for device type 01. Symbol MI- Case Terminal conditions Measured Test limits Unit STD terminal Subgroup 1 Subgroup 2 Subgroup method Cases C,D T C = +125 C T C = -55 C Test 1CK 1CR 1K V CC 2CK 2CR 2J 2K 1J no. V IC 1 1m 1CK 1.5 V (pos) 2 1m 1CR 3 1m 1K 4 1m 2CK 5 1m 2CR 6 1m 2J 7 1m 2K 8 1m 1J V IC 9-1m 1CK -1.5 (neg) 10-1m 1CR 11-1m 1K 12-1m 2CK 13-1m 2CR 14-1m 2J 15-1m 2K 16-1m 1J I CC / 2/ V CC V CC µ µ V O µ V 20-20µ 21 2/ -20µ 22 2/ -20µ 23 2/ -20µ 24 2/ -20µ V O Same terminal conditions as specified above for V O3 except I O = -5.2 m V O µ µ 33 2/ 20µ 34 2/ 20µ 35 2/ 20µ 36 2/ 20µ V O Same terminal conditions as specified above for V O3 except I O = 5.2 m I OS / 4.0V 4.0V 4.0V m 44 3/ 4.0V 4.0V 4.0V 45 3/ 4.0V 4.0V 46 3/ 4.0V 4.0V See footnotes at end of table. MI-M-38510/653

35 TE III. Group inspection for device type 01 Continued. 35 Symbol MI- STD- 883 method I I I I C I Truth table tests 6/ Case Terminal conditions Cases C,D Test no. 1CK 1CR 1K V CC 2CK 2CR 2J 2K 1J 54 Measured terminal 1CK 1CR 1K 2CK 2CR 2J 2K 1J 1CK 1CR 1K 2CK 2CR 2J 2K 1J 1CK 1CR 1K 2CK 2CR 2J 2K 1J ll outputs Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Subgroup 4 Min Max 10 Subgroup Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Unit µ pf MI-M-38510/653 See footnotes at end of table.

36 TE III. Group inspection for device type 01 Continued. 36 Symbol Truth table tests 6/ f MX 9/ t P1 t P1 t P2 t P2 t T t T MI- STD- 883 method Case Terminal conditions Cases C,D Test no. 1CK 1CR 1K V CC 2CK 2CR 2J 2K 1J / 10/ 10/ 10/ Measured terminal ll outputs 1CK to 1CK to 2CK to 2CK to 1CK to 1CK to 2CK to 2CK to 1CR to 2CR to 1CR to 2CR to Subgroup 7 Test limits Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Test limits 8/ Subgroup 9 Subgroup 10 Subgroup 11 T C = +125 C T C = -55 C Unit Mz ns MI-M-38510/653 See footnotes at end of table.

37 37 TE III. Group inspection for device type 02. Symbol MI- Case Terminal conditions Measured Test limits Unit STD terminal Subgroup 1 Subgroup 2 Subgroup method Cases C,D T C = +125 C T C = -55 C Test 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR V CC no. V IC 1 1m 1CR 1.5 V (pos) 2 1m 1D 3 1m 1CK 4 1m 1PRE 5 1m 2PRE 6 1m 2CK 7 1m 2D 8 1m 2CR V IC 9-1m 1CR -1.5 (neg) 10-1m 1D 11-1m 1CK 12-1m 1PRE 13-1m 2PRE 14-1m 2CK 15-1m 2D 16-1m 2CR I CC V CC V CC µ µ V O µ V 20-20µ 21-20µ 22-20µ 23 2/ -20µ 24 2/ -20µ 25-20µ 2/ 26-20µ 2/ V O Same terminal conditions as specified above for V O3 except I O = -5.2 m V O µ µ 37 20µ 38 20µ 39 2/ 20µ 40 2/ 20µ 41 20µ 2/ 42 20µ 2/ V O Same terminal conditions as specified above for V O3 except I O = 5.2 m I OS V 4.0V m V V V See footnotes at end of table. MI-M-38510/653

38 TE III. Group inspection for device type 02 Continued. 38 Symbol MI- STD- 883 method I I I I C I Truth table tests 6/ Case Terminal conditions Cases C,D Test no. 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR V CC 62 Measured terminal 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR ll outputs Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Subgroup 4 Min Max 10 Subgroup Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Unit µ pf MI-M-38510/653 See footnotes at end of table.

39 TE III. Group inspection for device type 02 Continued. 39 Symbol Truth table tests 6/ f MX 9/ t P1 t P1 t P2 t P2 t T t T MI- STD- 883 method Case Terminal conditions Cases C,D Test no. 1CR 1D 1CK 1PRE 2PRE 2CK 2D 2CR V CC Measured terminal ll outputs 1CK to 2CK to 1CK to 2CK to 1CK to 2CK to 1CK to 2CK to 1CR to 1PRE to 2CR to 2PRE to 1CR to 1PRE to 2CR to 2PRE to Subgroup 7 Test limits Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Test limits 8/ Subgroup 9 Subgroup 10 T C = +125 C Subgroup 11 T C = -55 C Unit Mz ns MI-M-38510/653 See footnotes at end of table.

40 40 TE III. Group inspection for device type 03. Symbol MI- Case Terminal conditions Measured Test limits Unit STD terminal Subgroup 1 Subgroup 2 Subgroup method Cases C,D T C = +125 C T C = -55 C Test 1J 1K 2J 2CK 2CR 2K 1CK 1CR V CC no. V IC 1 1m 1J 1.5 V (pos) 2 1m 1K 3 1m 2J 4 1m 2CK 5 1m 2CR 6 1m 2K 7 1m 1CK 8 1m 1CR V IC 9-1m 1J -1.5 (neg) 10-1m 1K 11-1m 2J 12-1m 2CK 13-1m 2CR 14-1m 2K 15-1m 1CK 16-1m 1CR I CC / 2/ V CC V CC µ µ V O µ V 20-20µ µ -20µ 2/ 2/ 23-20µ 2/ 24-20µ 2/ V O Same terminal conditions as specified above for V O3 except I O = -5.2 m V O µ µ 33 20µ 2/ 34 20µ 2/ 35 20µ 2/ 36 20µ 2/ V O Same terminal conditions as specified above for V O3 except I O = 5.2 m I OS V 4.0V 3/ 3/ 4.0V 4.0V 4.0V m V 3/ 4.0V 46 3/ 4.0V 4.0V See footnotes at end of table. MI-M-38510/653

41 TE III. Group inspection for device type 03 Continued. 41 Symbol MI- STD- 883 method I I I I C I Truth table tests 6/ Case Terminal conditions Cases C,D Test no. 1J 1K 2J 2CK 2CR 2K 1CK 1CR V CC 54 Measured terminal 1J 1K 2J 2CK 2CR 2K 1CK 1CR 1J 1K 2J 2CK 2CR 2K 1CK 1CR 1J 1K 2J 2CK 2CR 2K 1CK 1CR ll outputs Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Subgroup 4 Min Max 10 Subgroup Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Unit µ pf MI-M-38510/653 See footnotes at end of table.

42 TE III. Group inspection for device type 03 Continued. 42 Symbol Truth table tests 6/ f MX 9/ t P1 t P1 t P2 t P2 t T t T MI- STD- 883 method Case Terminal conditions Cases C,D Test no. 1J 1K 2J 2CK 2CR 2K 1CK 1CR V CC / 10/ 10/ 10/ Measured terminal ll outputs 1CK to 1CK to 2CK to 2CK to 1CK to 1CK to 2CK to 2CK to 1CR to 2CR to 1CR to 2CR to Subgroup 7 Test limits Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Test limits 8/ Subgroup 9 Subgroup 10 Subgroup 11 T C = +125 C T C = -55 C Unit Mz ns MI-M-38510/653 See footnotes at end of table.

43 TE III. Group inspection for device type Symbol MI-STD- 883 method V IC (pos) V IC (neg) Case Terminal conditions Cases E,F Test no. 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR V CC m -1m 1m -1m 1m -1m 1m -1m 1m -1m I CC V O / 28 2/ V O V O / 2/ 2/ 2/ -20µ -20µ -20µ -20µ -5.2m -5.2m -5.2m -5.2m 20µ 20µ 20µ 20µ -20µ -20µ -20µ -20µ -5.2m -5.2m -5.2m -5.2m 20µ 20µ 20µ 20µ 1m -1m 1m -1m 2/ 2/ 2/ 2/ 2/ 2/ 1m -1m 1m -1m 1m -1m Measured terminal 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR V CC V CC Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V µ µ V MI-M-38510/653 See footnotes at end of table.

44 TE III. Group inspection for device type 04 Continued. 44 Symbol MI- STD- 883 method V O I OS I I I I C I Case Terminal conditions Cases E,F Test no. 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR V CC 5.2m 5.2m 5.2m 5.2m 2/ 5.2m 2/ 5.2m 5.2m 2/ m 2/ 4.0 V 4.0V 4.0V 4.0V V 68 Measured terminal 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Subgroup 4 Min Max Unit V m n pf MI-M-38510/653 See footnotes at end of table.

45 TE III. Group inspection for device type 04 Continued. 45 Symbol Truth table tests 6/ f MX 9/ t P1 t P1 t P2 MI- STD- 883 method Case Terminal conditions Cases E,F Test no. 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR V CC Measured terminal ll outputs 1CK to 1CK to 2CK to 2CK to 1CK to 1CK to 2CK to 2CK to 1CR to 1PRE to 2PRE to 2CR to Subgroup 7 Test limits Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Test limits 8/ Subgroup 9 Subgroup 10 Subgroup 11 T C = +125 C T C = -55 C Unit Mz ns MI-M-38510/653 See footnotes at end of table.

46 TE III. Group inspection for device type 04 Continued. Symbol t P2 t T t T MI- STD- 883 method Case Terminal conditions Measured Test limits 8/ terminal Subgroup 9 Subgroup 10 Subgroup 11 Cases E,F T C = +125 C T C = -55 C Test 1CR 1J 1K 1CK 1PRE 2PRE 2CK 2K 2J 2CR V CC no PRE to CR to 131 2CR to 132 2PRE to Unit ns See footnotes at end of table. MI-M-38510/653 46

47 TE III. Group inspection for device type Symbol MI- Case Terminal conditions STD Cases method E,F Test no. 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR V CC V IC 1 1m (pos) 2 1m 3 1m 4 1m 5 1m 6 1m 7 1m 8 1m 9 1m 10 1m V IC 11-1m (neg) 12-1m 13-1m 14-1m 15-1m 16-1m 17-1m 18-1m 19-1m 20-1m I CC V O µ 24-20µ 25-20µ 26-20µ 27 2/ -20µ 28 2/ -20µ 29-20µ 2/ 30-20µ 2/ V O m m m m 35 2/ -5.2m 36 2/ -5.2m m 2/ m 2/ Measured terminal 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR V CC V CC Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V µ µ V MI-M-38510/653 See footnotes at end of table.

48 TE III. Group inspection for device type 05 Continued. 48 Symbol MI- Case Terminal conditions STD Cases method E,F Test no. 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR V CC V O µ 40 20µ 41 20µ 42 20µ 43 2/ 20µ 44 2/ 20µ 45 20µ 2/ 46 20µ 2/ V O m m m m 51 2/ 5.2m 52 2/ 5.2m m 2/ m 2/ I OS V 4.0V V V V I I I I Measured terminal 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V m n n MI-M-38510/653 See footnotes at end of table.

49 TE III. Group inspection for device type 05 Continued. Terminal conditions Test limits Case Cases E,F Subgroup 4 Symbol MI- STD- 883 method Test no. 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR V CC Measured terminal Min Max Unit C I CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR 10 pf Subgroup 7 Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Truth table tests 6/ ll outputs See footnotes at end of table. MI-M-38510/653 49

50 TE III. Group inspection for device type 05 Continued. 50 Symbol f MX 9/ t P1 t P1 t P2 t P2 t T t T MI- STD- 883 method Case Terminal conditions Measured Test limits 8/ terminal Subgroup 9 Subgroup 10 Subgroup 11 Cases E,F T C = +125 C T C = -55 C Test 1CK 1K 1J 1PRE 2PRE 2J 2K 2CK 2CR 1CR V CC no See footnotes at end of table. 1CK to 1CK to 2CK to 2CK to 1CK to 1CK to 2CK to 2CK to 1CR to 1PRE to 2CR to 2PRE to 1PRE to 1CR to 2PRE to 2CR to Unit Mz ns MI-M-38510/653

51 TE III. Group inspection for device type Symbol V IC (pos) V IC (neg) MI- Case Terminal conditions STD Cases method E,F Test no. OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC 1 1m 2 1m 3 1m 4 1m 5 1m 6 1m 7 1m 8 1m 9 1m 10 1m 11-1m 12-1m 13-1m 14-1m 15-1m 16-1m 17-1m 18-1m 19-1m 20-1m I CC I CCZ V O V O V O µ -20µ -20µ -20µ -7.8m -7.8m -7.8m -7.8m 20µ 20µ 20µ 20µ 20µ 20µ 20µ 20µ 2/ 2/ 2/ Measured terminal OE1 OE2 CK E1 E2 4D 3D 2D 1D CR OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V µ V MI-M-38510/653 See footnotes at end of table.

52 TE III. Group inspection for device type 06 Continued. 52 Symbol MI- STD- 883 method V O I OS I OZ I OZ I I I I Case Terminal conditions Cases E,F Test no. OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC 7.8m 7.8m 7.8m 7.8m 7.8m 2/ 7.8m 7.8m m 4.0V 4.0V 4.0V 4.0V 4.0V Measured terminal OE1 OE2 CK E1 E2 4D 3D 2D 1D CR OE1 OE2 CK E1 E2 4D 3D 2D 1D CR Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V m µ n MI-M-38510/653 See footnotes at end of table.

53 TE III. Group inspection for device type 06 Continued. Terminal conditions Test limits Case Cases E,F Subgroup 4 Symbol MI- STD- 883 method Test no. OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC Measured terminal Min Max Unit C I OE1 OE2 CK E1 E2 4D 3D 2D 1D CR 10 pf C O Subgroup 7 Subgroup 8 T C = +125 C Subgroup 8 T C = -55 C Truth table tests 6/ ll outputs See footnotes at end of table. MI-M-38510/653 53

54 TE III. Group inspection for device type 06 Continued. 54 Symbol f MX 6/ 9/ t P1 t P1 t P2 t PZ t PZ t PZ MI- STD- 883 method Case Terminal conditions Measured Test limits 8/ terminal Subgroup 9 Subgroup 10 Subgroup 11 Cases E,F T C = +125 C T C = -55 C Test OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC no CK to CK to 129 CK to 130 CK to 131 CK to 132 CK to 133 CK to 134 CK to / CR to CR to 137 CR to 138 CR to / OE1 to OE1 to 141 OE1 to 142 OE1 to 143 OE2 to 144 OE2 to 145 OE2 to 146 OE2 to / OE1 to OE1 to 149 OE1 to 150 OE1 to 151 OE2 to 152 OE2 to 153 OE2 to 154 OE2 to / OE1 to 156 OE1 to 157 OE1 to 158 OE1 to 159 OE2 to 160 OE2 to 161 OE2 to 162 OE2 to Unit Mz ns ns MI-M-38510/653 See footnotes at end of table.

55 TE III. Group inspection for device type 06 Continued. Symbol t PZ t T t T MI- STD- 883 method Case 2 Terminal conditions Cases E,F Test no. OE1 OE2 CK E1 E2 4D 3D 2D 1D CR V CC / / / Measured terminal OE1 to OE1 to OE1 to OE1 to OE2 to OE2 to OE2 to OE2 to Subgroup 9 Test limits 8/ Subgroup 10 T C = +125 C Subgroup 11 T C = -55 C Unit ns See footnotes at end of table. MI-M-38510/653 55

56 TE III. Group inspection for device type Symbol MI- Case Terminal conditions STD Cases method E,F Test no. CR 1D 2D 3D CK 4D 5Q 5D 6D 6Q V CC V IC 1 1m (pos) 2 1m 3 1m 4 1m 5 1m 6 1m 7 1m 8 1m V IC 9-1m (neg) 10-1m 11-1m 12-1m 13-1m 14-1m 15-1m 16-1m I CC / V O µ 20-20µ 21-20µ 22-20µ 23-20µ 24-20µ V O m m m m m m V O µ 32 20µ 33 20µ 34 20µ 35 20µ 36 20µ 37 20µ 2/ 38 20µ 39 20µ 40 20µ 41 20µ 42 20µ Measured terminal CR 1D 2D 3D CK 4D 5D 6D CR 1D 2D 3D CK 4D 5D 6D V CC V CC 5Q 6Q 5Q 6Q 5Q 6Q 5Q 6Q Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Unit V µ V MI-M-38510/653 See footnotes at end of table.

57 TE III. Group inspection for device type 07 Continued. 57 Symbol MI- STD- 883 method V O I OS I I I I C I Case Terminal conditions Cases E,F Test no. CR 1D 2D 3D CK 4D 5Q 5D 6D 6Q V CC 5.2m 5.2m 5.2m 5.2m 5.2m 5.2m 5.2m 2/ 5.2m 5.2m 5.2m 5.2m m 4.0V 4.0V 4.0V 4.0V 4.0V 4.0V 4.0V 4.0V Measured terminal 5Q 6Q 5Q 6Q 5Q 6Q CR 1D 2D 3D CK 4D 5D 6D CR 1D 2D 3D CK 4D 5D 6D CR 1D 2D 3D CK 4D 5D 6D Subgroup 1 Test limits Subgroup 2 T C = +125 C Subgroup 3 T C = -55 C Subgroup 4 Min Max Unit V m n pf MI-M-38510/653 See footnotes at end of table.