STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, LINEAR, 4-CHANNEL DIFFERENTIAL, ANALOG MULTIPLEXER, MONOLITHIC SILICON

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1 REVISIONS LTR DESCRIPTION DTE (YR-MO-D) PPROVED Update boilerplate paragraphs to current MIL-PRF requirements. Delete references to device class M requirements. - ro C. SFFLE REV REV REV STTUS REV OF S PMIC N/ STNDRD MICROCIRCUIT DRWING THIS DRWING IS VILBLE FOR USE BY LL DEPRTMENTS ND GENCIES OF THE DEPRTMENT OF DEFENSE PREPRED BY DN WONNELL CHECKED BY RYMOND MONNIN PPROVED BY RYMOND MONNIN DRWING PPROVL DTE DL LND ND MRITIME MICROCIRCUIT, LINER, 4-CHNNEL DIFFERENTIL, NLOG MULTIPLEXER, MONOLITHIC SILICON MSC N/ CGE CODE OF 10 DSCC FORM 2233 PR E348-12

2 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness ssurance (RH) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: Q E Federal stock class designator RH designator (see 1.2.1) type (see 1.2.2) class designator \ / (see 1.2.3) \/ Drawing number Case outline (see 1.2.4) Lead finish (see 1.2.5) RH designator. classes Q and V RH marked devices meet the MIL-PRF specified RH levels and are marked with the appropriate RH designator. dash (-) indicates a non-rh device type(s). The device type(s) identify the circuit function as follows: type Generic number Circuit function 01 HI channel differential analog multiplexer class designator. The device class designator is a single letter identifying the product assurance level as follows: class Q or V requirements documentation Certification and qualification to MIL-PRF Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier Lead finish. The lead finish is as specified in MIL-PRF for device classes Q and V. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

3 1.3 bsolute maximum ratings. 1/ Voltage between supply pins V +V SUPPLY to ground V -V SUPPLY to ground V V L to ground V nalog input voltage: +V S... +V SUPPLY + 2 V -V S... -V SUPPLY - 2 V Digital input voltage: +V EN +V... +V SUPPLY -V EN V... -V SUPPLY Continuous current, S or D m Peak current, S or D (pulsed at 1 ms, 10% duty cycle max) m Junction temperature (T J ) C Power dissipation (P D ) at +75 C : Case E mw Case mw Power dissipation (P D ) derating factor above +75 C : Case E mw/ C Case mw/ C Storage temperature range C to +150 C Lead temperature (soldering, 10 seconds) C Thermal resistance, junction-to-case (θ JC ) : Case E C/W Case C/W Thermal resistance, junction-to-ambient (θ J ) : Case E C/W Case C/W 1.4 Recommended operating conditions. Operating supply voltage (±V SUPPLY )... ±15 V mbient operating temperature range (T ) C to +125 C nalog input voltage (V S )... ±V SUPPLY Logic low level (V L )... 0 V to 0.4 V Logic high level (V H ) V to +V SUPPLY +5.0 V supply (V L ) V RMS current S or D max m 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

4 2. PPLICBLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPRTMENT OF DEFENSE SPECIFICTION MIL-PRF Integrated Circuits, Manufacturing, General Specification for. DEPRTMENT OF DEFENSE STNDRDS MIL-STD Test Method Standard Microcircuits. MIL-STD Interface Standard Electronic Component Case Outlines. DEPRTMENT OF DEFENSE HNDBOOKS MIL-HDBK MIL-HDBK List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at or from the Standardization Document Order Desk, 700 Robbins venue, Building 4D, Philadelphia, P ) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and herein for device classes Q and V Case outlines. The case outlines shall be in accordance with herein Terminal connections. The terminal connections shall be as specified on figure Truth table. The truth table shall be as specified on figure Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RH product using this option, the RH designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

5 TBLE I. Electrical performance characteristics. Test Symbol Conditions -55 C T +125 C +V SUPPLY = +15 V, -V SUPPLY = -15 V, V L = +5 V, +V EN = 0.4 V unless otherwise specified Input leakage current I IH Measure inputs sequentially, Leakage current into the source terminal of an OFF switch Leakage current into the drain terminal of an OFF switch Leakage current from an ON driver into the switch (drain) I IL +I S (OFF) -I S (OFF) connect all unused inputs to GND Measure inputs sequentially, connect all unused inputs to 5 V V S = +10 V, V D = -10 V, V EN = 4 V, Group subgroups type Min Limits Max 1,2, µ n all unused inputs = -10 V 2, V S = -10 V, V D = +10 V, V EN = 4 V, all unused inputs = +10 V 2, I D V D = +10 V, V EN = 4 V, n (OFF) all unused inputs = -10 V 2, I D V D = -10 V, V EN = 4 V, (OFF) all unused inputs = +10 V 2, I D (ON) -I D (ON) V S = V D = +10 V, V EN = 0.4 V, n all unused inputs = -10 V 2, V S = V D = -10 V, V EN = 0.4 V, Positive supply current I(+) V L = 0.4 V, V H = 4.0 V, all unused inputs = +10 V 2, V EN = 0.4 V 1,2, m Unit Negative supply current I(-) V L = 0.4 V, V H = 4.0 V, 1,2, m V EN = 0.4 V Logic supply current I L V L = 0.4 V, V H = 4.0 V, 1,2, m V EN = 0.4 V See footnotes at end of table. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

6 TBLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55 C T +125 C +V SUPPLY = +15 V, -V SUPPLY = -15 V, V L = +5 V, +V EN = 0.4 V unless otherwise specified Group subgroups type Switch ON resistance +R DS1 V S = 10 V, I D = 1 m Ω Min Limits Max 2, R DS1 V S = -10 V, I D = -1 m ,3 500 Logic level voltage V L Low digital input for all dc tests 1,2, V Break before make time delay V H High digital input for all dc tests 4.0 t OPEN R L = 200 Ω, C L = 12.5 pf, see figure ns Propagation delay times t R L = 10 MΩ, C L = 12.5 pf, ns Unit address inputs to I/O channel times, see figure 3 10, Enable to I/O t ON(EN) R L = 200 Ω, C L = 12.5 pf, ns t OFF(EN) see figure 3 10, ddress capacitance C V+ = V- = 0 V, f = 1 MHz 1/ pf Output switch capacitance C OS V+ = V- = 0 V, f = 1 MHz 1/ pf Input switch capacitance C IS V+ = V- = 0 V, f = 1 MHz 1/ pf Charge transfer error V CTE V S = GND, V GEN = 0 V to 5 V 1/ mv Off isolation V ISO V EN = 4 V, R L = 1 kω, 1/ db C L = 15 pf, V S = 7 V rms, f = 100 khz 1/ These parameters are controlled by design or process parameters and are not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML listed manufacturer in order to supply to the requirements of this drawing (see herein). The certificate of compliance submitted to DL Land and Maritime-V prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF and herein. 3.7 Certificate of conformance. certificate of conformance as required for device classes Q and V in MIL-PRF shall be provided with each lot of microcircuits delivered to this drawing. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

7 type 01 Case outline E 2 Terminal number Terminal symbol 1 DDRESS 1 NC 2 +5 V SUPPLY DDRESS 1 3 ENBLE +5 V SUPPLY 4 OUT 5 THRU 8 ENBLE 5 IN 8 OUT 5 THRU 8 6 IN 7 NC 7 IN 6 IN 8 8 IN 5 IN 7 9 IN 4 IN 6 10 IN 3 IN 5 11 IN 2 NC 12 OUT 1 THRU 4 IN 4 13 IN 1 IN V SUPPLY IN V SUPPLY OUT 1 THRU 4 16 DDRESS 0 NC IN V SUPPLY V SUPPLY DDRESS 0 FIGURE 1. Terminal connections. DDRESS ON 1 0 EN CHNNELS L L L 1 and 5 L H L 2 and 6 H L L 3 and 7 H H L 4 and 8 X X H NONE FIGURE 2. Truth table. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

8 FIGURE 3. Timing waveforms. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

9 4. VERIFICTION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection dditional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. dditional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF Inspections to be performed shall be those specified in MIL-PRF and herein for groups, B, C, D, and E inspections (see through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF including groups, B, C, D, and E inspections and as specified herein Group inspection. a. Tests shall be as specified in table II herein. b. Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 parameters are controlled by design or process parameters and are not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein dditional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF for the RH level being tested. ll device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at T = +25 C ±5 C, after exposure, to the subgroups specified in table II herein. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

10 TBLE II. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) class Q 1 1 1,2,3,9 1/ 10,11 1,2,3,4,9, 2/ 10, class V 1,2,3,9, 1/ 10,11 1,2,3,4,9, 2/ 10, / PD applies to subgroup 1. 2/ See 4.4.1c. 5. PCKGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF for device classes Q and V. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.2 Configuration control of SMD's. ll proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DL Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DL Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DL Land and Maritime -V, telephone (614) Comments. Comments on this drawing should be directed to DL Land and Maritime -V, Columbus, Ohio , or telephone (614) bbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF and MIL-HDBK Sources of supply Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in MIL-HDBK-103 and QML The vendors listed in QML have submitted a certificate of compliance (see 3.6 herein) to DL Land and Maritime -V and have agreed to this drawing. PR 97 STNDRD MICROCIRCUIT DRWING DL LND ND MRITIME

11 STNDRD MICROCIRCUIT DRWING BULLETIN DTE: pproved sources of supply for SMD are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML during the next revision. MIL-HDBK-103 and QML will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DL Land and Maritime -V. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML DL Land and Maritime maintains an online database of all current sources of supply at Standard microcircuit drawing PIN 1/ Vendor CGE number Vendor similar PIN 2/ QE 3/ HI1-1828/ Q2 3/ HI4-1828/883 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. The last approved source is listed below. Vendor CGE number Vendor name and address Intersil Corporation 1001 Murphy Ranch Road Milpitas, C The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.