STANDARD MICROCIRCUIT DRAWING MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, ANALOG MULTIPLEXER/ DEMULTIPLEXER, MONOLITHIC SILICON

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1 REVISIONS LTR ESCRIPTION TE (YR-MO-) PPROVE Changes in accordance with NOR 5962-R Raymond Monnin B C Incorporate revision. Update boilerplate to MIL-PRF requirements. Editorial changes throughout. LTG Correct the unit for the I OZL and I OZH tests in table I. Editorial changes throughout. - LTG Update boilerplate to current MIL-PRF requirements. Correct the input voltage range in paragraph 1.4 from V maximum to V V maximum. - CFS Thomas M. Hess Thomas M. Hess Thomas M. Hess REV REV REV STTUS REV OF S PMIC N/ STNR MICROCIRCUIT RWING THIS RWING IS VILBLE FOR USE BY LL EPRTMENTS N GENCIES OF THE EPRTMENT OF EFENSE PREPRE BY Rick O. Officer CHECKE BY PPROVE BY Monica L. Poelking Monica L. Poelking RWING PPROVL TE EFENSE SUPPLY CENTER COLUMBUS MICROCIRCUIT, IGITL, RITION HRENE CMOS, NLOG MULTIPLEXER/ EMULTIPLEXER, MONOLITHIC SILICON MSC N/ CGE COE SCC FORM 2233 PR 97 1 OF E065-07

2 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness ssurance (RH) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R V X C Federal stock class designator RH designator (see 1.2.1) evice type (see 1.2.2) evice class designator \ / (see 1.2.3) \/ rawing number Case outline (see 1.2.4) Lead finish (see 1.2.5) RH designator. evice classes Q and V RH marked devices meet the MIL-PRF specified RH levels and are marked with the appropriate RH designator. evice class M RH marked devices meet the MIL-PRF-38535, appendix specified RH levels and are marked with the appropriate RH designator. dash (-) indicates a non-rh device evice type(s). The device type(s) identify the circuit function as follows: evice type Generic number Circuit function B Radiation hardened CMOS, single 8-channel multiplexer B Radiation hardened CMOS, differential 4-channel multiplexer B Radiation hardened CMOS, triple 2-channel multiplexer BN Radiation hardened CMOS, single 8-channel multiplexer with neutron irradiated die BN Radiation hardened CMOS, differential 4-channel multiplexer with neutron irradiated die BN Radiation hardened CMOS, triple 2-channel multiplexer with neutron irradiated die evice class designator. The device class designator is a single letter identifying the product assurance level as follows: evice class M Q or V evice requirements documentation Vendor self-certification to the requirements for MIL-ST-883 compliant, non- JN class level B microcircuits in accordance with MIL-PRF-38535, appendix Certification and qualification to MIL-PRF Case outline(s). The case outline(s) are as designated in MIL-ST-1835 and as follows: Outline letter escriptive designator Terminals Package style E CIP2-T16 16 ual-in-line package X CFP4-F16 16 Flat package Lead finish. The lead finish is as specified in MIL-PRF for device classes Q and V or MIL-PRF-38535, appendix for device class M. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 2 SCC FORM 2234 PR 97

3 1.3 bsolute maximum ratings. 1/ 2/ 3/ Supply voltage range (V ) V dc to +20 V dc Input voltage range (V IN ) V dc to V V dc C input current, any one input... ±10 m evice dissipation per output transistor mw Storage temperature range (T STG ) C to +150 C Lead temperature (soldering, 10 seconds) C Thermal resistance, junction-to-case (θ JC ): Case E C/W Case X C/W Thermal resistance, junction-to-ambient (θ J ): Case E C/W Case X C/W Junction temperature (T J ) C Maximum power dissipation at T = +125 C (P ): 4/ Case E W Case X W 1.4 Recommended operating conditions. Supply voltage range (V ) V dc to +18 V dc Case operating temperature range (T C ) C to +125 C Input voltage range (V IN )... 0 V to V Output voltage range (V OUT )... 0 V to V Radiation features: Total dose... 1 x 10 5 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see )... > 75 MeV/(cm 2 /mg) 5/ ose rate upset (20 ns pulse)... > 5 x 10 8 Rads(Si)/s 5/ ose rate latch-up... > 2 x 10 8 Rads(Si)/s 5/ ose rate survivability... > 5 x Rads(Si)/s 5/ Neutron irradiated... > 1 x neutrons/cm 2 6/ 2. PPLICBLE OCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. EPRTMENT OF EFENSE SPECIFICTION MIL-PRF Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to V SS. 3/ The limits for the parameters specified herein shall apply over the full specified V range and case temperature range of -55 C to +125 C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on θ J ) at the following rate: Case E mw/ C Case X mw/ C 5/ Guaranteed by design or process but not tested. 6/ evice types 04, 05, and 06 only. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 3 SCC FORM 2234 PR 97

4 EPRTMENT OF EFENSE STNRS MIL-ST Test Method Standard Microcircuits. MIL-ST Interface Standard Electronic Component Case Outlines. EPRTMENT OF EFENSE HNBOOKS MIL-HBK MIL-HBK List of Standard Microcircuit rawings. Standard Microcircuit rawings. (Copies of these documents are available online at or or from the Standardization ocument Order esk, 700 Robbins venue, Building 4, Philadelphia, P ) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix for non-jn class level B devices and as specified herein Microcircuit die. For the requirements for microcircuit die, see appendix to this document. 3.2 esign, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and herein for device classes Q and V or MIL-PRF-38535, appendix and herein for device class M Case outlines. The case outlines shall be in accordance with herein Terminal connections. The terminal connections shall be as specified on figure Truth tables. The truth tables shall be as specified on figure Radiation test connections. The radiation test connections shall be as specified in table III herein. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SM PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RH product using this option, the RH designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF Marking for device class M shall be in accordance with MIL-PRF-38535, appendix Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 4 SCC FORM 2234 PR 97

5 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML listed manufacturer in order to supply to the requirements of this drawing (see herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HBK-103 (see herein). The certificate of compliance submitted to SCC-V prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF and herein or for device class M, the requirements of MIL-PRF-38535, appendix and herein. 3.7 Certificate of conformance. certificate of conformance as required for device classes Q and V in MIL-PRF or for device class M in MIL-PRF-38535, appendix shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to SCC-V of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, SCC, SCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer Microcircuit group assignment for device class M. evice class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix ). STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 5 SCC FORM 2234 PR 97

6 TBLE I. Electrical performance characteristics. Test Symbol Conditions -55 C T C +125 C unless otherwise specified evice type Group subgroups Min Limits Max Units Supply current I V = 5 V V IN = 0.0 V or V ll 1, 3 1/ / 150 µ V = 10 V V IN = 0.0 V or V ll 1, 3 1/ / 300 V = 15 V V IN = 0.0 V or V ll 1, 3 1/ / 600 V = 20 V, V IN = 0.0 V or V ll M,, P, L, R 2/ ll 1 25 V = 18 V, V IN = 0.0 V or V ll 3 10 Input voltage, low V IL V = 5 V = V IS through 1 kω V EE = V SS R L = 1 kω to V SS I IS < 2 µ, off channels ll 1, 2, V V = V IS = 10 V V EE = V SS R L = 1 kω to V SS I IS < 2 µ, on/off channels 1, 2, 3 3 V = 15 V = V IS through 1 kω V EE = V SS R L = 1 kω to V SS I IS < 2 µ, on all off channels 1, 2, 3 4 Input voltage, high V IH V = 5 V = V IS through 1 kω V EE = V SS R L = 1 kω to V SS I IS < 2 µ, off channels ll 1, 2, V V = V IS = 10 V V EE = V SS R L = 1 kω to V SS I IS < 2 µ, on/off channels 1, 2, 3 7 V = 15 V = V IS through 1 kω V EE = V SS R L = 1 kω to V SS I IS < 2 µ, on all off channels 1, 2, 3 11 See footnotes at end of table. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 6 SCC FORM 2234 PR 97

7 TBLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55 C T C +125 C unless otherwise specified evice type Group subgroups Min Limits Max Units On-state resistance R L = 10 kω, returned to (V V SS )/2 R ON V IS = V SS to V, V = 5 V ll Ω V IS = V SS to V, V = 10 V ll V IS = V SS to V, V = 15 V ll Input leakage current, low I IL V IN = V or GN, V = 20 V ll V IN = V or GN, V = 20 V n V IN = V or GN, V = 18 V Input leakage current, high I IH V IN = V or GN, V = 20 V ll V IN = V or GN, V = 20 V V IN = V or GN, V = 18 V N threshold voltage V NTH V = 10 V, I SS = -10 µ ll V M,, P, L, R 2/ ll N threshold voltage, delta V NTH V = 10 V, I SS = -10 µ M,, P, L, R 2/ ll 1 ±1.0 P threshold voltage V PTH V SS = 0.0 V, I = 10 µ ll M,, P, L, R 2/ ll P threshold voltage, delta V PTH V SS = 0.0 V, I = 10 µ M,, P, L, R 2/ ll 1 ±1.0 See footnotes at end of table. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 7 SCC FORM 2234 PR 97

8 TBLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55 C T C +125 C unless otherwise specified evice type Group Subgroups Min Limits Max Units Off channel leakage current, any channel off or all channels off (common out/in) I OZL V IN = V or GN, V = 20 V V OUT = 0 V V IN = V or GN, V = 20 V V OUT = 0 V V IN = V or GN, V = 18 V V OUT = 0 V ll V IN = V or GN, V = 20 V ll V OUT = V V IN = V or GN, V = 20 V V OUT = V V IN = V or GN, V = 18 V V OUT = V Input capacitance C IN 1/ ny input, See 4.4.1c ll pf Functional tests I OZH V = 2.8 V, V IN = V or GN ll 7 V = 20 V, V IN = V or GN V = 18 V, V IN = V or GN ll 8 M,, P, L, R 2/ ll 7 V = 3.0 V, V IN = V or GN ll 8B M,, P, L, R 2/ ll 7 7 V OH > V /2 V OL < V /2 µ V Propagation delay time, address to signal out, channels on or off 3/ t PHL, t PLH V = 5.0 V, V IN = V or GN V EE = V SS = 0 V ll , M,, P, L, R 2/ ll ns V = 10 V, V IN = V or GN V EE = V SS = 0 V V = 15 V, V IN = V or GN V EE = V SS = 0 V V = 5 V, V IN = V or GN V EE = -5 V, V SS = 0 V ll 9 1/ / / 450 See footnotes at end of table. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 8 SCC FORM 2234 PR 97

9 TBLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55 C T C +125 C unless otherwise specified evice type Group Subgroups Min Limits Max Units Propagation delay time, inhibit to signal out, channel turning on 3/ t PZH, t PZL V = 5.0 V, V IN = V or GN V EE = V SS = 0 V V = 10 V, V IN = V or GN V EE = V SS = 0 V ll , / 320 ns V = 15 V, V IN = V or GN V EE = V SS = 0 V 9 1/ 240 V = 5 V, V IN = V or GN V EE = -5 V, V SS = 0 V 9 1/ 400 t PHZ, t PLZ V = 5.0 V, V IN = V or GN V EE = V SS = 0 V ll , ns V = 10 V, V IN = V or GN V EE = V SS = 0 V 9 1/ 210 V = 15 V, V IN = V or GN V EE = V SS = 0 V 9 1/ 160 V = 5 V, V IN = V or GN V EE = -5 V, V SS = 0 V 9 1/ 300 1/ These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. 2/ evices supplied to this drawing will meet all levels M,, P, L, and R of irradiation. However, these devices are only tested at the 'R' level. When performing post irradiation electrical measurements for any RH level, T = +25 C. 3/ C L = 50 pf, R L = 10kΩ, input t r, t f < 20 ns. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 9 SCC FORM 2234 PR 97

10 evice types 01 and 04 Case outlines Terminal number E and X Terminal symbol CHNNELS IN/OUT 4 CHNNELS IN/OUT 6 COMMON OUT/IN CHNNELS IN/OUT 7 CHNNELS IN/OUT 5 INHIBIT V EE V SS C B CHNNELS IN/OUT 3 CHNNELS IN/OUT 0 CHNNELS IN/OUT 1 CHNNELS IN/OUT 2 V evice types 02 and 05 Case outlines Terminal number E and X Terminal symbol Y CHNNELS IN/OUT 0 Y CHNNELS IN/OUT 2 Y COMMON OUT/IN Y CHNNELS IN/OUT 3 Y CHNNELS IN/OUT 1 INHIBIT V EE V SS B X CHNNELS IN/OUT 3 X CHNNELS IN/OUT 0 X COMMON IN/OUT 0 X CHNNELS IN/OUT 1 X CHNNELS IN/OUT 2 V FIGURE 1. Terminal connections. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 10 SCC FORM 2234 PR 97

11 evice types 03 and 06 Case outlines Terminal number E and X Terminal symbol by IN/OUT bx IN/OUT cy OUT/IN CX or CY IN/OUT CX IN/OUT INHIBIT V EE V SS C B ax IN/OUT ay IN/OUT ax or ay IN/OUT bx or by IN/OUT V FIGURE 1. Terminal connections - Continued. evice types 01 and 04 Input states ON channel INHIBIT C B X X X None FIGURE 2. Truth tables. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 11 SCC FORM 2234 PR 97

12 evice types 02 and 05 Input states ON channel INHIBIT B x, 0y x, 1y x, 2y x, 3y 1 X X none evice types 03 and 06 Input states ON channel INHIBIT or B or C 0 0 ax or bx or cx 0 1 ay or by or cy 1 X none X = Irrelevant FIGURE 2. Truth tables Continued. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 12 SCC FORM 2234 PR 97

13 4. VERIFICTION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-ST-883, and shall be conducted on all devices prior to quality conformance inspection dditional criteria for device class M. a. Burn-in test, method 1015 of MIL-ST-883. (1) Test condition, B, C, or. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method (2) T = +125 C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein dditional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-ST-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. dditional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer s quality management (QM) plan. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF Inspections to be performed shall be those specified in MIL-PRF and herein for groups, B, C,, and E inspections (see through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF including groups, B, C,, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-ST-883 and herein for groups, B, C,, and E inspections (see through 4.4.4) Group inspection. a. Tests shall be as specified in table II herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. c. Subgroup 4 (C IN measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. C IN shall be measured between the designated terminal and GN at a frequency of 1 MHz. Tests shall be sufficient to validate the limits defined in table I herein. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 13 SCC FORM 2234 PR 97

14 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein dditional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-ST-883: a. Test condition, B, C, or. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-ST-883. b. T = +125 C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-ST dditional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-ST Group inspection. The group inspection end-point electrical parameters shall be as specified in table II herein Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF for the RH level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix for the RH level being tested. ll device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at T = +25 C ±5 C, after exposure, to the subgroups specified in table II herein Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-ST-883, method 1019 and as specified herein ccelerated aging test. ccelerated aging tests shall be performed on all devices requiring a RH level greater than 5k rads(si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25 C ±5 C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RH response of the device Neutron irradiation. Neutron irradiation for devices 04, 05, and 06 shall be conducted in wafer form using a neutron fluence of approximately 1 x neutrons/cm ose rate induced latchup testing. ose rate induced latchup testing shall be performed in accordance with method 1020 of MIL-ST-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may affect the RH capability of the process ose rate upset testing. ose rate upset testing shall be performed in accordance with method 1021 of MIL-ST-883 and herein (see 1.4 herein). a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the RH performance of the devices. Test 10 devices with 0 defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 14 SCC FORM 2234 PR 97

15 TBLE II. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-ST-883, method 5005, table I) Subgroups (in accordance with MIL-PRF-38535, table III) evice class M evice class Q evice class V Interim electrical parameters (see 4.2) 1,7,9 1,7,9 1,7,9 Final electrical parameters (see 4.2) 1,2,3,7,8,9,10,11 1/ 1,2,3,7,8,9,10,11 1/ 1,2,3,7,8,9,10,11 2/ 3/ Group test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1,2,3,4,7,8,9,10,11 1,2,3,4,7,8,9,10,11 1,2,3,4,7,8,9,10,11 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 1,2,3,7,8,9,10,11 3/ 1,7,9 1,7,9 1,7,9 1,7,9 1,7,9 1,7,9 1/ P applies to subgroups 1 and 7. 2/ P applies to subgroups 1, 7, 9, and deltas. 3/ elta limits, as specified in table IIB, shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see table I). TBLE IIB. Burn-in and operating life test elta parameters (+25 C). Parameter Symbol elta Limits Supply current I ±1.0 µ ON resistance V = 10 V R ONEL ±20% STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 15 SCC FORM 2234 PR 97

16 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). No shadowing of the ion beam due to fixturing or package related effects is allowed. b. The fluence shall be 100 errors or 10 6 ions/cm 2. c. The flux shall be between 10 2 and 10 5 ions/cm 2 /s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be 20 microns in silicon. e. The test temperature shall be +25 C and the maximum rated operating temperature ±10 C. f. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. TBLE III. Irradiation test connections. 1/ evice types Open Ground V = 10 V ±0.5 V 01 and , 8 1, 2, 4, 5, 6, 9, 10, 11, 12, 13, 14, 15, 16 evice types Open Ground V = 10 V ±0.5 V 02 and 05 3, 13 7, 8 1, 2, 4, 5, 6, 9, 10, 11, 12, 14, 15, 16 evice types Open Ground V = 10 V ±0.5 V 03 and 06 4, 14, 15 7, 8 1, 2, 3, 5, 6, 9, 10, 11, 12, 13, 16 1/ Each pin except V and GN will have a series resistor of 47KΩ ±5%, for irradiation testing. 4.5 Methods of inspection. Methods of inspection shall be as specified as follows: Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GN terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PCKGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF for device classes Q and V or MIL-PRF-38535, appendix for device class M. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 16 SCC FORM 2234 PR 97

17 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing Substitutability. evice class Q devices will replace device class M devices. 6.2 Configuration control of SM's. ll proposed changes to existing SM's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform efense Supply Center Columbus (SCC) when a system application requires configuration control and which SM's are applicable to that system. SCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact SCC-V, telephone (614) Comments. Comments on this drawing should be directed to SCC-V, Columbus, Ohio , or telephone (614) bbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF and MIL-HBK Sources of supply Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML The vendors listed in QML have submitted a certificate of compliance (see 3.6 herein) to SCC-V and have agreed to this drawing pproved sources of supply for device class M. pproved sources of supply for class M are listed in MIL-HBK-103. The vendors listed in MIL-HBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by SCC-V. 6.7 dditional information. copy of the following additional data shall be maintained and available from the device manufacturer: a. RH upset levels. b. Test conditions (SEP). c. Number of upsets (SEP). d. Number of transients (SEP). e. Occurrence of latchup (SEP). STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 17 SCC FORM 2234 PR 97

18 PPENIX PPENIX FORMS PRT OF SM.1 SCOPE.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness ssurance (RH) levels are reflected in the PIN..1.2 PIN. The PIN is as shown in the following example: 5962 R V 9 Federal stock class designator RH designator (see.1.2.1) evice type (see.1.2.2) evice class designator \ / (see.1.2.3) \/ rawing number ie code ie details (see.1.2.4) RH designator. evice classes Q and V RH identified die meet the MIL-PRF specified RH levels. dash (-) indicates a non-rh die evice type(s). The device type(s) identify the circuit function as follows: evice type Generic number Circuit function B Radiation hardened CMOS, single 8-channel multiplexer B Radiation hardened CMOS, differential 4-channel multiplexer B Radiation hardened CMOS, triple 2-channel multiplexer BN Radiation hardened CMOS, single 8-channel multiplexer with neutron irradiated die BN Radiation hardened CMOS, differential 4-channel multiplexer with neutron irradiated die BN Radiation hardened CMOS, triple 2-channel multiplexer with neutron irradiated die evice class designator. evice class Q or V evice requirements documentation Certification and qualification to the die requirements of MIL-PRF STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 18 SCC FORM 2234 PR 97

19 PPENIX PPENIX FORMS PRT OF SM ie details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix ie physical dimensions. ie type Figure number 01, , , ie bonding pad locations and electrical functions. ie type Figure number Interface materials. 01, , , 06-3 ie type Figure number ssembly related information. 01, , , 06-3 ie type Figure number 01, , , bsolute maximum ratings. See paragraph 1.3 herein for details..1.4 Recommended operating conditions. See paragraph 1.4 herein for details..2 PPLICBLE OCUMENTS..2.1 Government specifications, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. EPRTMENT OF EFENSE SPECIFICTION MIL-PRF Integrated Circuits, Manufacturing, General Specification for. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 19 SCC FORM 2234 PR 97

20 EPRTMENT OF EFENSE STNR PPENIX PPENIX FORMS PRT OF SM MIL-ST Test Method Standard Microcircuits. EPRTMENT OF EFENSE HNBOOKS MIL-HBK List of Standard Microcircuit rawings. MIL-HBK Standard Microcircuit rawings. (Copies of these documents are available online at or or from the Standardization ocument Order esk, 700 Robbins venue, Building 4, Philadelphia, P ).2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained..3 REQUIREMENTS.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF and as specified herein or as modified in the device manufacturer s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein..3.2 esign, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF and the manufacturer s QM plan, for device classes Q and V and herein ie physical dimensions. The die physical dimensions shall be as specified in and on figures -1, -2, and ie bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in and on figures -1, -2, and Interface materials. The interface materials for the die shall be as specified in and on figures -1, -2, and ssembly related information. The assembly related information shall be as specified in and on figures -1, -2, and Truth tables. The truth tables shall be as defined in paragraph herein Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph herein..3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document..3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I..3.5 Marking. s a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer s identification and the PIN listed in.1.2 herein. The certification mark shall be a QML or Q as required by MIL-PRF Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML listed manufacturer in order to supply to the requirements of this drawing (see.6.4 herein). The certificate of compliance submitted to SCC-V prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer s product meets, for device classes Q and V, the requirements of MIL-PRF and the requirements herein..3.7 Certificate of conformance. certificate of conformance as required for device classes Q and V in MIL-PRF shall be provided with each lot of microcircuit die delivered to this drawing. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 20 SCC FORM 2234 PR 97

21 PPENIX PPENIX FORMS PRT OF SM.4 VERIFICTION.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF or as modified in the device manufacturer s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein..4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer s QM plan. s a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-ST-883, method b. 100% wafer probe (see paragraph.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-ST-883, method 2010 or the alternate procedures allowed in MIL-ST-883, method Conformance inspection Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see.3.5 herein). RH levels for device classes Q and V shall be as specified in MIL-PRF End point electrical testing of packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs herein..5 IE CRRIER.5.1 ie carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection..6 NOTES.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF or MIL-PRF for government microcircuit applications (original equipment), design applications, and logistics purposes..6.2 Comments. Comments on this appendix should be directed to SCC-V, Columbus, Ohio, or telephone (614) bbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF and MIL-HBK Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML The vendors listed within QML have submitted a certificate of compliance (see.3.6 herein) to SCC-V and have agreed to this drawing. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 21 SCC FORM 2234 PR 97

22 PPENIX PPENIX FORMS PRT OF SM ie physical dimensions. ie size: ie thickness: 2261 x 2591 microns. 20 ±1 mils. ie bonding locations and electrical functions. NOTE: Pad numbers reflect terminal numbers when placed in case outlines E, X (see figure 1). FIGURE -1 STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 22 SCC FORM 2234 PR 97

23 PPENIX PPENIX FORMS PRT OF SM Interface materials. Top metallization: l 11.0kÅ 14.0kÅ Backside metallization: Glassivation. Type: Thickness: Substrate: None PSG 10.4kÅ 15.6kÅ Single Crystal Silicon. ssembly related information. Substrate potential: Floating or tied to V. Special assembly instructions: Bond pad #16 (V ) first. FIGURE -1 Continued. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 23 SCC FORM 2234 PR 97

24 PPENIX PPENIX FORMS PRT OF SM ie physical dimensions. ie size: ie thickness: 2159 x 2235 microns. 20 ±1 mils. ie bonding locations and electrical functions. NOTE: Pad numbers reflect terminal numbers when placed in case outlines E, X (see figure 1). FIGURE -2 STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 24 SCC FORM 2234 PR 97

25 PPENIX PPENIX FORMS PRT OF SM Interface materials. Top metallization: l 11.0kÅ 14.0kÅ Backside metallization: Glassivation. Type: Thickness: Substrate: None PSG 10.4kÅ 15.6kÅ Single Crystal Silicon. ssembly related information. Substrate potential: Floating or tied to V. Special assembly instructions: Bond pad #16 (V ) first. FIGURE -2 Continued. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 25 SCC FORM 2234 PR 97

26 PPENIX PPENIX FORMS PRT OF SM ie physical dimensions. ie size: ie thickness: 2286 x 2108 microns. 20 ±1 mils. ie bonding locations and electrical functions. NOTE: Pad numbers reflect terminal numbers when placed in case outlines E, X (see figure 1). FIGURE -3 STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 26 SCC FORM 2234 PR 97

27 PPENIX PPENIX FORMS PRT OF SM Interface materials. Top metallization: l 11.0kÅ 14.0kÅ Backside metallization: Glassivation. Type: Thickness: Substrate: None PSG 10.4kÅ 15.6kÅ Single Crystal Silicon. ssembly related information. Substrate potential: Floating or tied to V. Special assembly instructions: Bond pad #16 (V ) first. FIGURE -3 Continued. STNR MICROCIRCUIT RWING EFENSE SUPPLY CENTER COLUMBUS 27 SCC FORM 2234 PR 97

28 STNR MICROCIRCUIT RWING BULLETIN TE: pproved sources of supply for SM are listed below for immediate acquisition information only and shall be added to MIL-HBK-103 and QML during the next revision. MIL-HBK-103 and QML will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by SCC-V. This information bulletin is superseded by the next dated revision of MIL-HBK-103 and QML SCC maintains an online database of all current sources of supply at Standard microcircuit drawing PIN 1/ Vendor CGE number Vendor similar PIN 2/ 5962R VEC C4051BMSR 5962R VXC C4051BKMSR 5962R V C4051BHSR 5962R VEC C4052BMSR 5962R VXC C4052BKMSR 5962R V C4052BHSR 5962R VEC C4053BMSR 5962R VXC C4053BKMSR 5962R V C4053BHSR 5962R VEC 3/ C4051BNSR 5962R VXC C4051BKNSR 5962R V9 3/ C4051BHNSR 5962R VEC 3/ C4052BNSR 5962R VXC 3/ C4052BKNSR 5962R V9 3/ C4052BHNSR 5962R VEC 3/ C4053BNSR 5962R VXC 3/ C4053BKNSR 5962R V9 3/ C4053BHNSR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. o not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CGE number Vendor name and address Intersil Corporation 2401 Palm Bay Blvd P O Box 883 Melbourne, FL The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.