74HC1G125; 74HCT1G125

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1 Rev December 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed, Si-gate CMOS device. The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (pin OE). HIGH level at pin OE causes the output to assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC125 and 74HCT125. Wide supply voltage range from 2.0 V to 6.0 V Symmetrical output impedance High noise immunity Low power consumption Balanced propagation delays ESD protection: HBM EI/JESD C exceeds 2000 V MM EI/JESD exceeds 200 V Very small 5 pins packages Specified from 40 C to+85 C and 40 C to +125 C Table 1: Quick reference data GND = 0 V; T amb =25 C; t r =t f 6.0 ns. delay to Y V CC =5V; C L =15pF ns Symbol Parameter Conditions Min Typ Max Unit 74HC1G125 t PHL, propagation t PLH C i input capacitance pf C PD power dissipation capacitance V I = GND to V CC [1] pf

2 4. Ordering information Table 1: Quick reference data continued GND = 0 V; T amb =25 C; t r =t f 6.0 ns. Symbol Parameter Conditions Min Typ Max Unit delay to Y V CC =5V; C L =15pF ns 74HCT1G125 t PHL, propagation t PLH C i input capacitance pf C PD power dissipation capacitance V I = GND to V CC 1.5 V [1] pf [1] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+Σ(C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; Σ(C L V 2 CC f o ) = sum of the outputs. Table 2: Ordering information Type number Package Temperature range Name Description Version 74HC1G125 74HC1G125GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; SOT353-1 body width 1.25 mm 74HC1G125GV 40 C to +125 C SC-74 plastic surface mounted package; 5 leads SOT753 74HCT1G125 74HCT1G125GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; SOT353-1 body width 1.25 mm 74HCT1G125GV 40 C to +125 C SC-74 plastic surface mounted package; 5 leads SOT Marking Table 3: Marking Type number 74HC1G125GW 74HC1G125GV 74HCT1G125GW 74HCT1G125GV Marking code HM H25 TM T25 Product data sheet Rev December of 16

3 6. Functional diagram 2 1 OE Y EN 4 mna118 mna119 Fig 1. Logic symbol Fig 2. IEC logic symbol Y OE mna120 Fig 3. Logic diagram 7. Pinning information 7.1 Pinning 74HC1G125GW 74HCT1G125GW 74HC1G125GV 74HCT1G125GV OE 1 5 V CC OE 1 5 V CC 2 2 GND 3 4 Y GND 3 4 Y 001aad aad949 Fig 4. Pin configuration TSSOP5 Fig 5. Pin configuration SC Pin description Table 4: Pin description Symbol Pin Description OE 1 output enable input (active LOW) 2 data input GND 3 ground (0 V) Y 4 data output V CC 5 supply voltage Product data sheet Rev December of 16

4 8. Functional description 9. Limiting values 8.1 Function table Table 5: Function table [1] Control Input Output OE Y L L L L H H H X Z [1] H = HIGH voltage level; L = LOW voltage level; X = don t care; Z = high-impedance OFF-state. Table 6: Limiting values In accordance with the bsolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage V I IK input clamping current V I < 0.5 V or V I >V CC V [1] - ±20 m I OK output clamping current V O < 0.5 V or [1] - ±20 m V O >V CC V I O output current V O = 0.5 V to (V CC V) [1] - ±35 m I CC quiescent supply - 70 m current I GND ground current - 70 m T stg storage temperature C P tot total power dissipation T amb = 40 C to +125 C [2] mw [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] bove 55 C the value of P tot derates linearly with 2.5 mw/k. Product data sheet Rev December of 16

5 10. Recommended operating conditions 11. Static characteristics Table 7: Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit 74HC1G125 V CC supply voltage V V I input voltage 0 - V CC V V O output voltage 0 - V CC V T amb ambient temperature C t r, t f input rise and fall times V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns 74HCT1G125 V CC supply voltage V V I input voltage 0 - V CC V V O output voltage 0 - V CC V T amb ambient temperature C t r, t f input rise and fall times V CC = 4.5 V ns Table 8: Static characteristics 74HC1G125 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C [1] V IH HIGH-state input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-state input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V Product data sheet Rev December of 16

6 Table 8: Static characteristics 74HC1G125 continued t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit I LI input leakage current V I = V CC or GND; V CC = 6.0 V µ I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; µ V CC = 6.0 V I CC quiescent supply current V I = V CC or GND; I O =0; µ V CC = 6.0 V C i input capacitance pf T amb = 40 C to +125 C V IH HIGH-state input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V IL LOW-state input voltage V CC = 2.0 V V V CC = 4.5 V V V CC = 6.0 V V V OH HIGH-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V V OL LOW-state output voltage V I = V IH or V IL I O = 20 µ; V CC = 2.0 V V I O = 20 µ; V CC = 4.5 V V I O = 20 µ; V CC = 6.0 V V I O = 6.0 m; V CC = 4.5 V V I O = 7.8 m; V CC = 6.0 V V I LI input leakage current V I = V CC or GND; V CC = 6.0 V µ I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; µ V CC = 6.0 V I CC quiescent supply current V I = V CC or GND; I O =0; V CC = 6.0 V µ [1] ll typical values are measured at T amb = 25 C. Product data sheet Rev December of 16

7 Table 9: Static characteristics 74HCT1G125 t recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C [1] V IH HIGH-state input voltage V CC = 4.5 V to 5.5 V V V IL LOW-state input voltage V CC = 4.5 V to 5.5 V V V OH HIGH-state output voltage V I = V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6.0 m V V OL LOW-state output voltage V I = V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6.0 m V I LI input leakage current V I = V CC or GND; V CC = 5.5 V µ I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; µ V CC = 5.5 V I CC quiescent supply current V I = V CC or GND; I O =0; V CC = 6.0 V µ I CC additional quiescent supply current [1] ll typical values are measured at T amb = 25 C. V I = V CC 2.1 V; I O =0; V CC = 4.5 V to 5.5 V µ C i input capacitance pf T amb = 40 C to +125 C V IH HIGH-state input voltage V CC = 4.5 V to 5.5 V V V IL LOW-state input voltage V CC = 4.5 V to 5.5 V V V OH HIGH-state output voltage V I = V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6.0 m V V OL LOW-state output voltage V I = V IH or V IL ; V CC = 4.5 V I O = 20 µ V I O = 6.0 m V I LI input leakage current V I = V CC or GND; V CC = 5.5 V µ I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; µ V CC = 5.5 V I CC quiescent supply current V I = V CC or GND; I O =0; V CC = 6.0 V µ I CC additional quiescent supply current V I = V CC 2.1 V; I O =0; V CC = 4.5 V to 5.5 V µ Product data sheet Rev December of 16

8 12. Dynamic characteristics Table 10: Dynamic characteristics 74HC1G125 Voltages are referenced to GND (ground = 0 V); CL = 50 pf unless otherwise specified; for test circuit see Figure 8 Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C [1] t PHL, t PLH propagation delay to Y see Figure 6 V CC = 2.0 V ns V CC = 4.5 V ns V CC =5V; ns C L =15pF V CC = 6.0 V ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time OE to Y 3-state output disable time OE to Y [1] ll typical values are measured at T amb = 25 C. [2] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+Σ(C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; Σ(C L V 2 CC f o ) = sum of the outputs. see Figure 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns see Figure 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns C PD power dissipation capacitance V I = GND to V CC [2] pf T amb = 40 C to +125 C t PHL, propagation delay t PLH V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns t PZH, t PZL t PHZ, t PLZ 3-state output enable time OE to Y 3-state output disable time OE to Y see Figure 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns see Figure 7 V CC = 2.0 V ns V CC = 4.5 V ns V CC = 6.0 V ns Product data sheet Rev December of 16

9 Table 11: Dynamic characteristics 74HCT1G125 Voltages are referenced to GND (ground = 0 V); CL = 50 pf unless otherwise specified; for test circuit see Figure 8 Symbol Parameter Conditions Min Typ Max Unit T amb = 40 C to +85 C [1] t PHL, propagation delay to Y see Figure 6 t PLH V CC = 4.5 V ns V CC =5V; C L =15pF ns t PZH, t PZL t PHZ, t PLZ C PD 3-state output enable time OE to Y 3-state output disable time OE to Y power dissipation capacitance [1] ll typical values are measured at T amb = 25 C. [2] C PD is used to determine the dynamic power dissipation (P D in µw). P D =C PD V 2 CC f i N+Σ(C L V 2 CC f o ) where: f i = input frequency in MHz; f o = output frequency in MHz; C L = output load capacitance in pf; V CC = supply voltage in V; N = number of inputs switching; Σ(C L V 2 CC f o ) = sum of the outputs. V CC = 4.5 V; see Figure ns V CC = 4.5 V; see Figure ns V I = GND to V CC 1.5 V [2] pf T amb = 40 C to +125 C t PHL, propagation delay to Y V CC = 4.5 V; see Figure ns t PLH t PZH, t PZL t PHZ, t PLZ 3-state output enable time OE to Y 3-state output disable time OE to Y V CC = 4.5 V; see Figure ns V CC = 4.5 V; see Figure ns Product data sheet Rev December of 16

10 13. Waveforms V I input GND t PHL t PLH Y output 001aad070 Fig 6. Measurement points are given in Table 12. Propagation delay data input () to output (Y) V I OE input GND t PLZ t PZL output LOW-to-OFF OFF-to-LOW V CC V OL V X t PHZ t PZH V OH output HIGH-to-OFF OFF-to-HIGH GND outputs enabled V Y outputs disabled outputs enabled mna644 Fig 7. Measurement points are given in Table 12. Logic levels: V OL and V OH are typical output voltage drop that occur with the output load. Enable and disable times Table 12: Measurement points Type Input Output V X V Y 74HC1G V CC 0.5V CC V OL V V OH 0.3 V 74HCT1G V 1.3 V V OL V V OH 0.3 V Product data sheet Rev December of 16

11 V I negative pulse 0 V 90 % 10 % t W t f t r t r t f V I positive pulse 0 V 10 % 90 % t W V CC V CC PULSE GENERTOR VI DUT VO RL S1 open RT CL 001aad983 Fig 8. Test data is given in Table 13. Definitions for test circuit: R T = Termination resistance should be equal to the output impedance Z o of the pulse generator C L = Load capacitance including jig and probe capacitance R L = Load resistor S1 = Test selection switch Load circuitry for measuring switching times Table 13: Test data Type Input Load S1 position V I t r, t f C L R L t PLH, t PHL t PZH, t PHZ t PZL, t PLZ 74HC1G125 V CC 6 ns 15 pf, 50 pf 74HCT1G125 3 V 6 ns 15 pf, 50 pf 1 kω open GND V CC 1 kω open GND V CC Product data sheet Rev December of 16

12 14. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 D E X c y H E v M Z ( 3 ) θ 1 3 e b p e 1 w M detail X L p L mm scale DIMENSIONS (mm are the original dimensions) UNIT max. 1 mm b p c D (1) E (1) e e 1 H E L L p v w y Z (1) θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT353-1 MO-203 SC-88 EUROPEN PROJECTION ISSUE DTE Fig 9. Package outline SOT353-1 (TSSOP5) Product data sheet Rev December of 16

13 Plastic surface mounted package; 5 leads SOT753 D B E X y H E v M 5 4 Q 1 c Lp e bp w M B detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 bp c D E e H E L p Q v w y mm OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT753 SC Fig 10. Package outline SOT753 (SC-74) Product data sheet Rev December of 16

14 15. bbreviations Table 14: cronym CMOS ESD HBM TTL MM bbreviations Description Complementary Metal Oxide Semiconductor ElectroStatic Discharge Human Body Model Transistor-Transistor Logic Machine Model 16. Revision history Table 15: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes Product data sheet ECN05_085-74HC_HCT1G125_4 Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. In Table 6 Limiting values I O : changed max value ±12.5 into ±35 I CC : changed max value 25 into 70 I GND : changed max value 25 into 70 In Table 8 Static characteristics 74HC1G125 ; T amb = 40 C to+85 C V OH : changed condition I O = 2.0 m into I O = 6.0 m and min value from 4.13 into 3.84 V OH : changed condition I O = 2.6 m into I O = 7.8 m and min value from 5.63 into 5.34 V OL : changed condition I O = 2.0 m into I O = 6.0 m V OL : changed condition I O = 2.6 m into I O = 7.8 m In Table 8 Static characteristics 74HC1G125 ; T amb = 40 C to +125 C V OH : changed condition I O = 2.0 m into I O = 6.0 m V OL : changed condition I O = 2.0 m into I O = 6.0 m In Table 9 Static characteristics 74HCT1G125 ; T amb = 40 C to+85 C V OH : changed condition I O = 2.0 m into I O = 6.0 m and min value from 4.13 into 3.84 V OL : changed condition I O = 2.0 m into I O = 6.0 m and typ value from 0.15 into 0.16 In Table 9 Static characteristics 74HCT1G125 ; T amb = 40 C to +125 C V OH : changed condition I O = 2.0 m into I O = 6.0 m V OL : changed condition I O = 2.0 m into I O = 6.0 m 74HC_HCT1G125_ Product specification HC_HCT1G125_3 74HC_HCT1G125_ Product specification HC_HCT1G125_2 74HC_HCT1G125_ Product specification HC_HCT1G125_1 74HC_HCT1G125_ Product specification Product data sheet Rev December of 16

15 17. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 18. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information pplications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 19. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 20. Trademarks Notice ll referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 21. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Product data sheet Rev December of 16

16 22. Contents 1 General description Features Quick reference data Ordering information Marking Functional diagram Pinning information Pinning Pin description Functional description Function table Limiting values Recommended operating conditions Static characteristics Dynamic characteristics Waveforms Package outline bbreviations Revision history Data sheet status Definitions Disclaimers Trademarks Contact information Koninklijke Philips Electronics N.V ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 December 2005 Document number: Published in The Netherlands

The 74HC21 provide the 4-input AND function.

The 74HC21 provide the 4-input AND function. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL).