MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, 8 BIT, DIGITAL-TO-ANALOG CONVERTERS, MONOLITHIC SILICON

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1 NCHPOUND October, 2011 SUPERSEDNG MLM8510/11B 21 June 2005 MLTARY SPECFCATON MCROCRCUTS, LNEAR, 8 BT, DGTALTOANALOG CONVERTERS, MONOLTHC SLCON This specification is approved for use by all Departments and Agencies of the Department of Defense. Reactivated for new design as of 10 February May be used for either new or existing design acquisition. The requirements for acquiring the product herein shall consist of this specification sheet and MLPRF SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, 8 bit, digitaltoanalog converters. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MLM8510 have been superseded by MLPRF855, (see Part or dentifying Number (PN. The PN is in accordance with MLPRF855, and as specified herein Device types. The device types are as follows: Device type Circuit 01 D/A Converter, 8 bit, 0.19% linearity 02 D/A Converter, 8 bit, 0.11% linearity Device class. The device class is the product assurance level as defined in MLPRF Case outline. The case outlines are as designated in 185 and as follows: Outline letter Descriptive designator Terminals Package style E GDP1T16 or CDP2T16 16 Dualinline 1. Absolute maximum ratings. Supply voltage [V CC CC]... 6 Vdc Voltage, digital input to negative supply [V logic CC]... 0 to 6 Vdc Voltage, logic control LC... V CC to V CC Reference voltage input 14, V V CC to V CC Reference input current ( ma Reference input differential voltage [ 14 V 15]... ±18 Vdc Lead temperature (soldering, 60 sec C. Junction temperature (T J C Storage temperature C to 150 C Comments, suggestions, or questions on this document should be addressed to: DLA Land Maritime, ATTN: DLA Land Maritime VAS, P.O. Box 990, Columbus, OH , or ed to linear@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSST Online database at AMSC N/A C 5962

2 1.4 Recommended operating conditions. Supply voltage range... ±5 Vdc to ±15 Vdc 1/ 2/ Ambient temperature range C to 125 C 1.5 Power and thermal characteristics. Case outline Package Maximum allowable maximum θ JC maximum θ JA power dissipation E Dualinline 400 T A = 125 C 5 C/W 120 C/W 2. APPLCABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents Specifications, standards, and handbooks. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the solicitation or contract. DEPARTMENT OF DEFENSE SPECFCATONS MLPRF855 ntegrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS Test Method Standard for Microelectronics. nterface Standard Electronic Component Case Outlines. (Copies of these documents are available online at or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA Order of precedence. n the event of a conflict between the text of this specification and the references cited herein the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.. REQUREMENTS.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4. and tem requirements. The individual item requirements shall be in accordance with MLPRF855 and as specified herein or as modified in the device manufacturer's Quality Management (QM plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.. Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MLPRF855 and herein. 1/ A slight degradation in linearity can occur when the supply is near the ±5 V end of the recommended operating range. 2/ Sequence of power supply turnon must be V CC prior to V CC unless the positive supply has current limiting resistance of 100 Ω ±10%. f a current limiting resistance is used, a slight degradation in linearity will occur. 2

3 ..1 Terminal connections and functional block diagram. The terminal connections and functional block diagram shall be as specified on figure Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing activity upon request... Case outlines. The case outlines shall be as specified in Lead material and finish. The lead material and finish shall be in accordance with MLPRF855 (see Electrical performance characteristics. The electrical performance characteristics are as specified in table, and apply over the full recommended ambient operating temperature range, unless otherwise specified..6 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in table. The electrical tests for each subgroup are described in table..7 Marking. Marking shall be in accordance with MLPRF Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 56 (see MLPRF855, appendix A. 4. VERFCATON. 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MLPRF855 or as modified in the device manufacturer s Quality Management (QM plan. The modification in the QM plan shall not effect the form, fit, or function as function as described herein. 4.2 Screening. Screening shall be in accordance with MLPRF855, and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burnin test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MLPRF855. The burnin test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB in accordance with MLPRF855 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of 88. NOTE: f accelerated hightemperature test conditions are used, the device manufacturer shall ensure that at least 85 percent of the applied voltage is dropped across the device at temperature. The device is not considered functional under accelerated test conditions. b. nterim and final electrical test parameters shall be as specified in table, except interim electrical parameters test prior to burnin is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MLPRF Qualification inspection. Qualification inspection shall be in accordance with MLPRF Technology Conformance inspection (TC. Technology conformance inspection shall be in accordance with MLPRF855 and herein for groups A, B, C, and D inspections (see through

4 TABLE. Electrical performance characteristics. Characteristics Symbol Conditions 1/ 55 C T A 125 C (table and figures 2,, and 4 unless otherwise indicated Device type Min Max Units Supply current from V CC CC All input bits high All ma Supply current from CC All input bits high All ma V CC Full scale current All input bits high, ma Measure O All input bits low, Measure O ma Zero scale current ZS All input bits low, measure O µa Power supply sensitivity from V CC Power supply sensitivity from V CC Power supply sensitivity from V CC Power supply sensitivity from V CC ZS All input bits high, measure O µa P SS 1 All input bits high, measure O All µa V CC = 4.5 V to 5.5 V, V CC = 18 V PSS 1 All input bits low, measure O All µa V CC = 4.5 V to 5.5 V, V CC = 18 V P SS 2 All input bits high, measure O All µa V CC = 12 V to 18 V, V CC = 18 V PSS 2 All input bits low, measure O All µa V CC = 12 V to 18 V, V CC = 18 V P SS 1 All input bits high, measure O All µa V CC = 18 V, V CC = 12 V to 18 V PSS 1 All input bits low, measure O All µa V CC = 18 V, V CC = 12 V to 18 V P SS 2 All input bits high, measure O All µa V CC = 18 V, V CC = 4.5 V to 5.5 V, REF = 1 ma PSS 2 All input bits low, measure O, V CC = 18 V, V CC = 4.5 V to 5.5 V Output current range R 1 All input bits high, measure O V CC = 10 V, V REF = 15 V R1 All input bits low, measure O V CC = 10 V, V REF = 15 V Output current range R 2 All input bits high, measure O V CC = 12 V, V REF = 25 V See footnote at end of table. R2 All input bits low, measure O V CC = 12 V, V REF = 25 V All µa All 2.1 ma All 2.1 ma All 4.2 ma All 4.2 ma 4

5 TABLE. Electrical performance characteristics Continued. Characteristics Symbol Conditions 1/ 55 C T A 125 C (table and figures 2,, and 4 unless otherwise indicated Device type Min Max Units Reference bias current REF All input bits low All.0 0 µa High level input current H All input bits V N = 18 V, each input All µa measured separately Low level input current L All input bits V N = 10 V, each input All 10.0 µa measured separately Full scale current at All input bits high, measure O, ma 18 V compliance V O = 18 V Full scale current at 10 V compliance Change in full scale current due to voltage compliance Positive bit errors NL Negative bit errors See footnote at end of table. All input bits low, measure O, V O = 18 V All input bits high, measure O, V O = 10 V All input bits low, measure O, V O = 10 V C All input bits high, measure O, V O = 18 V to 10 V All input bits low, C measure O, NL NL NL ma ma ma C T A 125 C All µa T A = 55 C C T A 125 C All µa T A = 55 C V O = 18 V to 10 V Positive bit errors % Measure O, Positive bit errors % Measure O, Negative bit errors % Measure O, Negative bit errors % Measure O,

6 TABLE. Electrical performance characteristics Continued. Characteristics Symbol Conditions 1/ 55 C T A 125 C (table and figures 2,, and 4 unless otherwise indicated Positive and negative bit NL error difference Measure O, Σ Measure O, Device type Min Max Units NL % % Positive relative accuracy NL Measure O, Σ NL % Negative relative accuracy NL Measure O, Σ NL % NL Measure O, Σ NL % NL Measure O, Σ NL Monotonicity (i Measure O, ( ON ON1 0 at each major carry point % All µa (i Measure O, ( ON ON 1 0 at each All µa major carry point Output symmetry µa Full scale current temperature coefficient T C( All input bits high, measure O All ppm/ C TC ( All input bits low, measure O All ppm/ C Propagation delay time, hightolow level Propagation delay time, lowtohigh level Reference amplifier input slew rate t PHL Figure, measure V O All ns t PLH Figure, measure V O All ns d O/dt Figure 4, measure V O, T A = 25 C Settling time hightolow t SHL Figure, output within 1/2 LSB of final value of O,T A = 25 C Settling time lowtohigh t SLH Figure, output within 1/2 LSB of final value of O,T A = 25 C All 1.5 ma/µs All ns All ns 1/ The following electrical performance characteristics apply unless otherwise stated in table : ±V CC = ±15 Vdc, source resistance = 50 Ω, REF = 2.0 ma. 6

7 TABLE. Electrical test requirements. MLPRF855 test requirements Subgroups (see table Class S Class B devices devices nterim electrical parameters 1 1 Final electrical test parameters 1*, 2, 1*, 2, Group A test requirements 1, 2,, 9, 10, 11, 12 Group B electrical test parameters when 1, 2, and using the method 5005 QC option table V delta Group C endpoint electrical parameters Group D endpoint electrical parameters *PDA applies to subgroup 1. limits 1, 2, and table V delta limits 1, 2,, 9, 10, 11, 12 N/A 1 and table V delta limits 1, 2, 1 7

8 Terminal connections. Functional block diagram. Figure 1. Terminal connections and functional block diagram. 8

9 NOTES: 1/ The reference D/A converter selected should have a resolution of 8 bits or more, and a linearity of 0.015% or better. 2/ The voltage reference should have an accuracy of ±0.02% or better. / All relays are shown in their unexcited state. FGURE 2. Test circuit for static tests. 9

10 NOTES: 1. For turnon, V L = 2.7 V; for turnoff, V L = 0.7 V. 2. Minimize capacitance at this node, by using short runs and adequate spacing between runs.. Diodes must be Schottky type (MBD 501 or equivalent. 4. Bandwidth of oscilloscope used for waveform measurement should be 50 MHz minimum; saturation of preamp must be avoided. FGURE. Test circuit for propagation delay and settling time, device type 01 and

11 FGURE. Test circuit for propagation delay and settling time, device type 01 and 02 Continued. 11

12 FGURE 4. Test circuit for slew rate, device types 01 and

13 1 Subgroup Symbol 88 method Test No. TABLE. Group A inspection for device types 01 and 02. Energized relays No. Value Unit Min Max Min Max V 10 V 11 V 12 V 1 V 14 V 15 V 1 CC ma CC = ma T A = 25 C CC ma CC = / E 1 V = E ma K2 24 E 2 V = E 2 ZS K4 24 E V ZS = 10E µa K2, K4 24 E ZS 4 V ZS = 10E P SS E 5 V P SS 1 = 10(E 5E µa E 6 V PSS K2 24 E 7 V PSS 1 = 10(E 7E µa K2 24 E 8 V P SS E 9 V P SS 2 = 10(E 9E µa E 10 V PSS K2 24 E 11 V PSS 2 = 10(E 11E µa K2 24 E 12 V P SS E 1 V P SS 1= 10(E 1E µa PSS K2 24 E 14 V PSS 1 = 10(E 14E µa P SS K5 24 E 15 V P SS 2= 10(E 15E µa K5 24 E 16 V PSS K2, K5 24 E 17 V PSS 2 = 10(E 17E µa K2, K5 24 E 18 V R K1, K4 26 E 19 V R 1 = 0.2E ma R K1, K2, K4 26 E 20 V R1 = 0.2E 20 R K1, K4 26 E 21 V R 2 = 0.2E ma R K1, K2, K4 26 E 22 V R2 = 0.2E 22 REF K 10 A REF = X µa H1 26 2/ A H1 = 4 X µa H2 27 2/ A 6 H2 = 5 X µa H 28 2/ A H = 6 X µa H4 29 2/ A H4 = 7 X µa H5 0 2/ A H5 = 8 X µa H6 1 2/ A H6 = 9 X µa H7 2 2/ A H7 = 10 X µa H8 2/ A H8 = 11 X µa L1 4 2/ A L1 = 12 X µa L2 5 2/ A L2 = 1 X µa L 6 2/ A L = 14 X µa L4 7 2/ A L4 = 15 X µa L5 8 2/ A L5 = 16 X µa L6 9 2/ A L6 = 17 X µa L7 40 2/ A L7 = 18 X µa L8 41 2/ A L8 = 19 X µa See footnotes at end of table.

14 14 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V 1 V CAL K 24 E 2 V V CAL1 = E 2 V T A = 25 C E 24 V = (E 24 E ma K2 24 E 25 V = (E 25 E ma V CAL K 24 E 26 V V CAL2 = E 26 V E 27 V = (E 27 E ma K2 24 E 28 V = (E 28 E ma C 48 C = 1000( µa C µa C =1000 ( V CAL E 29 V V CAL = E 29 V V E 0 V V = E 0 V V K2 24 E 1 V V = E 1 V V K2 24 E 2 V V = E 2 V NL E V ( E V % CAL NL 1 = NL E 4 V NL E 5 V NL E 6 V NL E 7 V See footnotes at end of table. (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 V CAL ( E4 VCAL V CAL ( E5 VCAL V CAL ( E6 VCAL V CAL ( E7 VCAL V CAL % % % %

15 15 Subgroup 1 T A = 25 C TABLE. Group A inspection for device types 01 and 02. Continued. Symbol 88 Test Energized relays method No V 10 V 11 V 12 V 1 V 14 V 15 V 162 No. Value Unit Min Max Min Max NL E 8 V ( E V % 8 CAL NL 6 = NL E 9 V NL E 40 V NL 1 NL 2 NL NL 4 NL 5 NL 6 See footnotes at end of table E 41 V E 42 V E 4 V E 44 V E 45 V E 46 V (4 NL 7 = (2 NL 8 = (1 NL 1 = (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 NL 6 = (4 V CAL ( E9 VCAL V CAL ( E40 VCAL V CAL ( E41 V V ( E42 V V ( E4 V V ( E44 V V ( E45 V V ( E46 V V % % % % % % % %

16 16 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V E NL 47 V 7 ( E V % 47 T A = 25 C NL 7 = (2 V 10 NL E 8 48 V ( E V % 48 NL 8 = (1 V = NL i NL K. (i, k, bits having positive errors = NL i NL k. (i, k, bits having positive errors 72 = NL m NL n. (m, n, bits having negative errors % % 1 1 = NL m NL n. (m, n, bits having negative errors 74 = % Σ NL 75 NL 76 NL 77 Σ NL = NL = NL = Σ NL Σ NL % MLM8510/G NL 78 NL = Σ NL NL 79 NL = Σ NL ( 01 a E 49 V ( 01 b E 50 V 128 ( 01 a = X 0.01(E ( 01 b = X 0.01(E50 ma ma ( ( 01 = [( 01 a ( 01 b] x µa See footnotes at end of table.

17 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V 1 ( 02 a E 51 V 64 ma T A = 25 C ( 02 a = X 0.01(E51 ( 02 b E 52 V 6 ma ( 02 b = X 0.01(E52 ( ( 02 = [( 02 a ( 02 b] x µa ( 0 a E 5 V 2 ma ( 0 a = X 0.01(E5 ( 0 b E 54 V 1 ( 0 b = X 0.01(E54 ma ( 0 88 ( 0 = [( 0 a ( 0 b] x µa ( 04 a E 55 V 16 ma ( 04 a = X 0.01(E55 ( 04 b E 56 V 15 ( 04 b = X 0.01(E56 ma 17 ( ( 04 = [( 04 a ( 04 b] x µa ( 05 a E 57 V 8 ma ( 05 a = X 0.01(E57 ( 05 b E 58 V 7 ma ( 05 b = X 0.01(E58 ( ( 05 = [( 05 a ( 05 b] x µa ( 06 a E 59 V 4 ma ( 06 a = X 0.01(E59 ( 06 b E 60 V ma ( 06 b = X 0.01(E60 ( ( 06 = [( 06 a ( 06 b] x µa ( 07 a E 61 V 2 ma ( 07 a = X 0.01(E61 ( 07 b E 62 V 1 ( 07 b = X 0.01(E62 ma ( ( 07 = [( 07 a ( 07 b] x µa ( 08 b E 6 V ( 08 b = 0.01(E 6 ma ( ( 08 = [( 07 b ( 08 b] x µa 10 = µa See footnotes at end of table.

18 18 Subgroup Symbol 88 method Test No. TABLE. Group A inspection for device types 01 and 02 Continued. Energized relays No. Value Unit Min Max Min Max V 10 V 11 V 12 V 1 V 14 V 15 V 2 CC ma CC = ma T A = 125 C CC ma CC = / E 64 V = E ma K2 24 E 65 V = E 65 ZS K4 24 E 66 V ZS = 10E µa K2, K4 24 E ZS 67 V ZS = 10E P SS E 68 V P SS 1 = 10(E 68E µa E 69 V PSS K2 24 E 70 V PSS 1 = 10(E 70E µa K2 24 E 71 V P SS E 72 V P SS 2 = 10(E 72E µa E 7 V PSS K2 24 E 74 V PSS 2 = 10(E 74E µa K2 24 E 75 V P SS E 76 V P SS 1= 10(E 76E µa PSS K2 24 E 77 V PSS 1 = 10(E 77E µa P SS K5 24 E 78 V P SS 2= 10(E 78E µa K5 24 E 79 V PSS K2, K5 24 E 80 V PSS 2 = 10(E 80E µa K2, K5 24 E 81 V R K1, K4 26 E 82 V R 1 = 0.2E ma R K1, K2, K4 26 E 8 V R1 = 0.2E 8 R K1, K4 26 E 84 V R 2 = 0.2E ma R K1, K2, K4 26 E 85 V R2 = 0.2E REF K A REF = 22 X µa H / A H1 = 2 X µa H2 10 2/ A H2 = 24 X µa H 11 2/ A H = 25 X µa H4 12 2/ A H4 = 26 X µa H5 1 2/ A H5 = 27 X µa H6 14 2/ A H6 = 28 X µa H7 15 2/ A H7 = 29 X µa H8 16 2/ A H8 = 0 X µa L1 17 2/ A L1 = 1 X µa L2 18 2/ A L2 = 2 X µa L 19 2/ A L = X µa L / A L4 = 4 X µa L / A L5 = 5 X µa L / A L6 = 6 X µa L7 14 2/ A L7 = 7 X µa L / A L8 = 8 X µa See footnotes at end of table.

19 19 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V 2 V CAL K 24 E 86 V V CAL1 = E 86 V T A = 125 C E 87 V = (E 87 E ma K2 24 E 88 V = (E 88 E ma V CAL K 24 E 89 V V CAL2 = E 89 V E 90 V = (E 90 E ma K2 24 E 91 V = (E 91 E ma C 151 C = 1000( µa C µa C =1000 ( V CAL E 92 V V CAL = E 92 V V E 9 V V = E 9 V V K2 24 E 94 V V = E 94 V V K2 24 E 95 V V = E 95 V NL E 96 V ( E V % 96 CAL NL 1 = NL E 97 V NL E 98 V NL E 99 V NL E 100 V See footnotes at end of table. (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 V CAL ( E97 VCAL V CAL ( E98 VCAL V CAL ( E99 VCAL V CAL ( E100 VCAL V CAL % % % %

20 20 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized relays method No V 10 V 11 V 12 V 1 V 14 V 15 V 162 No. Value Unit Min Max Min Max 2 NL E 101 V ( E V % 101 CAL T A = 125 C NL 6 = NL E 102 V NL E 10 V NL 1 NL 2 NL NL 4 NL 5 NL 6 See footnotes at end of table E 104 V E 105 V E 106 V E 107 V E 108 V E 109 V (4 NL 7 = (2 NL 8 = (1 NL 1 = (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 NL 6 = (4 V CAL ( E102 VCAL V CAL ( E10 VCAL V CAL ( E104 V V ( E105 V V ( E106 V V ( E107 V V ( E108 V V ( E109 V V % % % % % % % %

21 21 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V E NL 110 V 7 ( E V % 110 T A = 125 C NL 7 = (2 V 10 NL E V ( E V % 111 NL 8 = (1 V = NL i NL K. (i, k, bits having positive errors = NL i NL k. (i, k, bits having positive errors 175 = NL m NL n. (m, n, bits having negative errors % % 1 1 = NL m NL n. (m, n, bits having negative errors 177 = % Σ NL 178 Σ NL = % NL 179 NL = Σ NL NL 180 NL = Σ NL NL 181 NL = Σ NL NL 182 NL = Σ NL ( 01 a E 112 V ( 01 b E 11 V 128 ( 01 a = X 0.01(E ( 01 b = X 0.01(E11 ma ma ( ( 01 = [( 01 a ( 01 b] x µa See footnotes at end of table.

22 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V 2 ( 02 a E 114 V 64 ma T A = 125 C ( 02 a = X 0.01(E114 ( 02 b E 115 V 6 ( 02 b = X 0.01(E115 ma ( ( 02 = [( 02 a ( 02 b] x µa ( 0 a E 116 V 2 ma ( 0 a = X 0.01(E116 ( 0 b E 117 V 1 ( 0 b = X 0.01(E117 ma 22 ( ( 0 = [( 0 a ( 0 b] x µa ( 04 a E 118 V 16 ma ( 04 a = X 0.01(E118 ( 04 b E 119 V 15 ma ( 04 b = X 0.01(E119 ( ( 04 = [( 04 a ( 04 b] x µa ( 05 a E 120 V 8 ma ( 05 a = X 0.01(E120 ( 05 b E 121 V 7 ma ( 05 b = X 0.01(E121 ( ( 05 = [( 05 a ( 05 b] x µa ( 06 a E 122 V 4 ma ( 06 a = X 0.01(E122 ( 06 b E 12 V ( 06 b = X 0.01(E12 ma ( ( 06 = [( 06 a ( 06 b] x µa ( 07 a E 124 V 2 ma ( 07 a = X 0.01(E124 ( 07 b E 125 V 1 ( 07 b = X 0.01(E125 ma ( ( 07 = [( 07 a ( 07 b] x µa ( 08 b E 126 V 1 ma ( 08 b = X 0.01(E126 ( ( 08 = [( 07 b ( 08 b] x µa 206 = µa See footnotes at end of table.

23 2 Subgroup Symbol 88 method Test No. TABLE. Group A inspection for device types 01 and 02 Continued. Energized relays No. Value Unit Min Max Min Max V 10 V 11 V 12 V 1 V 14 V 15 V CC ma CC = ma T A = 55 C CC ma CC = / E 127 V = E ma K2 24 E 128 V = E 128 ZS K4 24 E 129 V ZS = 10E µa K2, K4 24 E ZS 10 V ZS = 10E P SS E 11 V P SS 1 = 10(E 11E µa E 12 V PSS K2 24 E 1 V PSS 1 = 10(E 1E µa K2 24 E 14 V P SS E 15 V P SS 2 = 10(E 15E µa E 16 V PSS K2 24 E 17 V PSS 2 = 10(E 17E µa K2 24 E 18 V P SS E 19 V P SS 1= 10(E 19E µa PSS K2 24 E 140 V PSS 1 = 10(E 140E µa P SS K5 24 E 141 V P SS 2= 10(E 141E µa K5 24 E 142 V PSS K2, K5 24 E 14 V PSS 2 = 10(E 14E µa K2, K5 24 E 144 V R K1, K4 26 E 145 V R 1 = 0.2E ma R K1, K2, K4 26 E 146 V R1 = 0.2E 146 R K1, K4 26 E 147 V R 2 = 0.2E ma R K1, K2, K4 26 E 148 V R2 = 0.2E REF K A REF = 41 X µa H1 22 2/ A H1 = 42X µa H2 2 2/ A H2 = 4X µa H 24 2/ A H = 44X µa H4 25 2/ A H4 = 45X µa H5 26 2/ A H5 = 46X µa H6 27 2/ A H6 = 47X µa H7 28 2/ A H7 = 48 X µa H8 29 2/ A H8 = 49 X µa L / A L1 = 50 X µa L / A L2 = 51 X µa L 242 2/ A L = 52 X µa L4 24 2/ A L4 = 5 X µa L / A L5 = 54 X µa L / A L6 = 55 X µa L / A L7 = 56 X µa L / A L8 = 57 X µa See footnotes at end of table.

24 24 Subgroup T A = 55 C TABLE. Group A inspection for device types 01 and 02. Continued. Symbol 88 Test Energized method No relays No. Value Unit Min Max Min Max 9 V 10 V 14 V 15 V V V V V CAL K 24 E 149 V V CAL1 = E 149 V E 150 V = (E 150 E ma K2 24 E 151 V = (E ma V CAL K 24 E 152 V V CAL2 = E 152 V E 15 V = (E 15 E ma K2 24 E 154 V = (E ma C 254 C = 1000( µa C µa E 149 E 152 C =1000 ( V CAL E 155 V V CAL = E 155 V V E 156 V V = E 156 V V K2 24 E 157 V V = E 157 V V K2 24 E 158 V V = E 158 V NL E 159 V ( E V % 159 CAL NL 1 = NL E 160 V NL E 161 V NL E 162 V NL E 16 V See footnotes at end of table. (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 V CAL ( E160 VCAL V CAL ( E161 VCAL V CAL ( E162 VCAL V CAL ( E16 VCAL V CAL % % % %

25 25 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized relays method No V 10 V 11 V 12 V 1 V 14 V 15 V 162 No. Value Unit Min Max Min Max NL E 164 V ( E V % 164 CAL T A = 55 C NL 6 = NL E 165 V NL E 166 V NL 1 NL 2 NL NL 4 NL 5 NL 6 See footnotes at end of table E 167 V E 168 V E 169 V E 170 V E 171 V E 172 V (4 NL 7 = (2 NL 8 = (1 NL 1 = (128 NL 2 = (64 NL = (2 NL 4 = (16 NL 5 = (8 NL 6 = (4 V CAL ( E165 VCAL V CAL ( E166 VCAL V CAL ( E167 V V ( E168 V V ( E169 V V ( E170 V V ( E171 V V ( E172 V V % % % % % % % %

26 26 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V E NL 17 V 7 ( E V % 17 T A = 55 C NL 7 = (2 V 10 NL E V ( E V % 174 NL 8 = (1 V = NL i NL K. (i, k, bits having positive errors = NL i NL k. (i, k, bits having positive errors 278 = NL m NL n. (m, n, bits having negative errors % % 1 1 = NL m NL n. (m, n, bits having negative errors 280 = % Σ NL 281 Σ NL = % NL 282 NL = Σ NL NL 28 NL = Σ NL NL 284 NL = Σ NL NL 285 NL = Σ NL ( 01 a E 175 V ( 01 b E 176 V 128 ( 01 a = X 0.01(E ( 01 b = X 0.01(E176 ma ma ( ( 01 = [( 01 a ( 01 b] x µa See footnotes at end of table.

27 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V ( 02 a E 177 V 64 ma T A = 55 C ( 02 a = X 0.01(E177 ( 02 b E 178 V 6 ma ( 02 b = X 0.01(E178 ( ( 02 = [( 02 a ( 02 b] x µa ( 0 a E 179 V 2 ma ( 0 a = X 0.01(E179 ( 0 b E 180 V 1 ( 0 b = X 0.01(E180 ma 27 ( ( 0 = [( 0 a ( 0 b] x µa ( 04 a E 181 V 16 ma ( 04 a = X 0.01(E181 ( 04 b E 182 V 15 ma ( 04 b = X 0.01(E182 ( ( 04 = [( 04 a ( 04 b] x µa ( 05 a E 18 V 8 ma ( 05 a = X 0.01(E18 ( 05 b E 184 V 7 ma ( 05 b = X 0.01(E184 ( ( 05 = [( 05 a ( 05 b] x µa ( 06 a E 185 V 4 ma ( 06 a = X 0.01(E185 ( 06 b E 186 V ( 06 b = X 0.01(E186 ma ( 06 0 ( 06 = [( 06 a ( 06 b] x µa ( 07 a E 187 V 2 ma ( 07 a = X 0.01(E187 ( 07 b E 188 V 1 ( 07 b = X 0.01(E188 ma ( ( 07 = [( 07 a ( 07 b] x µa ( 08 b E 189 V 1 ma ( 08 b = X 0.01(E189 ( ( 08 = [( 07 b ( 08 b] x µa 09 = µa See footnotes at end of table.

28 28 TABLE. Group A inspection for device types 01 and 02. Continued. Subgroup Symbol 88 Test Energized method No. relays No. Value Unit Min Max Min Max 9 V 10 V 11 V 12 V 1 V 14 V 15 V 9 TC( 10 ( E1 E T A = 25 C TC( = X 10 4 PPM/ C E1 TC( 11 ( E1 E TC( = X 10 4 PPM/ C 0.8E1 TC( 12 ( E2 E PPM/ C TC( = X 10 4 E2 TC( 1 ( E2 E TC( = X 10 4 PPM/ C 0.8E2 t PHL 14 See figure. V L = 2.7 V, V OUT hightolow transition, ns S1OFF N lowtohigh t PLH 15 See figure. V L = 0.7 V, V OUT lowtohigh transition, ns S1OFF N hightolow 10 t PHL 16 See figure. V L = 2.7 V, V OUT hightolow transition, ns T A = 125 C S1OFF N lowtohigh t PLH 17 See figure. V L = 0.7 V, V OUT lowtohigh transition, ns S1OFF N hightolow 11 t PHL 18 See figure. V L = 2.7 V, V OUT hightolow transition, ns T A = 55 C S1OFF N lowtohigh t PLH 19 See figure. V L = 0.7 V, V OUT lowtohigh transition, ns S1OFF N hightolow 12 do 20 See figure 4. V N lowtohigh transition, do ma T A = 25 C dt V L = 5 Vdc = dt t µ sec t SHL 21 See figure. V L = 2.7 V, V OUT hightolow transition, ns S1OFF N lowtohigh t SLH 22 See figure. V L = 0.7 V, V OUT lowtohigh transition, ns S1OFF N hightolow NOTES: 1/ E The measurement of and can be made directly as a voltage measurement at pin 26 ( = pin 26 ma 5000 provided that measurement accuracy is ±0.1% or better. f the measurement is made in accordance with table, the reference D/A converter must be calibrated for a full scale current of 2.0 ma ±0.1%. 2/ For tests 26, 12916, and 2229, the logic input voltage shall be 18 V. For tests 441, 17144, and , the logic input voltage shall be 10.0 V.

29 TABLE V. Group C end point electrical parameters. T A = 25 C; ±V CC = ±15 V Test Symbol Device type 01 Device type 02 no. Min Max Delta Units Min Max Delta Units ma ma ma ma 5 ZS µa µa 6 ZS µa µa Group A inspection. Group A inspection shall be in accordance with table of MLPRF855 and as follows: a. Tests shall be as specified in table herein. b. Subgroups 4, 5, 6, 7, and 8 shall be omitted. c. Subgroup 12 shall be added to group A inspection for all classes and it shall consist of the conditions and limits as specified in table. The sample size series number shall be 5 for all classes (accept on Group B inspection. Group B inspection shall be in accordance with table of MLPRF Group C inspection. Group C inspection shall be in accordance with table V of MLPRF855 and as follows: a. End point electrical parameters shall be as specified in table herein. b. The steadystate life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MLPRF855. The burnin test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB in accordance with MLPRF855 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of Group D inspection. Group D inspection shall be in accordance with table V of MLPRF855. End point electrical parameters shall be as specified in table herein. 4.5 Methods of inspection. Methods of inspection shall be specified and as follows Voltage and current. All voltage values given except the input offset voltage (or differential voltage are referenced to the external zero reference level of the supply voltage. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PACKAGNG 5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2. When packaging of materiel is to be performed by DoD or inhouse contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the nventory Control Point's packaging activity within the Military Service or Defense Agency, or within the military service's system command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CDROM products, or by contacting the responsible packaging activity. 29

30 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. 6.1 ntended use. Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of the specification. b. PN and compliance identifier, if applicable (see 1.2. c. Requirements for delivery of one copy of the conformance inspection data pertinent to the device inspection lot to be supplied with each shipment by the device manufacturer, if applicable. d. Requirements for certificate of compliance, if applicable. e. Requirements for notification of change of product or process to acquiring activity in addition to notification of the qualifying activity, if applicable. f. Requirements for failure analysis (including required test condition of 88, method 500, corrective action and reporting of results, if applicable. g. Requirements for product assurance options. h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by or direct shipment to the Government. i. Requirements for "JAN" marking. j. Packaging requirements (see Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML855 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. nformation pertaining to qualification of products may be obtained from DSCCVQ, 990 E. Broad Street, Columbus, Ohio Superseding information. The requirements of MLM8510 have been superseded to take advantage of the available Qualified Manufacturer Listing (QML system provided by MLPRF855. Previous references to MLM8510 in this document have been replaced by appropriate references to MLPRF855. All technical requirements now consist of this specification and MLPRF855. The MLM8510 specification sheet number and PN have been retained to avoid adversely impacting existing government logistics systems and contractor's parts lists. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MLPRF855 and Logistic support. Lead materials and finishes (see. are interchangeable. Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2, lead material and finish A (see.4. Longer length leads and lead forming should not affect the part number. 0

31 6.7 Substitutability. The crossreference information below is presented for the convenience of users. Microcircuits covered by this specification will functionally replace the listed genericindustry type. Genericindustry microcircuit types may not have equivalent operational performance characteristics across military temperature ranges or reliability factors equivalent to MLM 8510 device types and may have slight physical variations in relation to case size. The presence of this information should not be deemed as permitting substitution of genericindustry types for MLM8510 types or as a waiver of any of the provisions of MLPRF855. Military device type Genericindustry type 01 DAC08 02 DAC08A 6.8 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians: Preparing activity: Army CR DLA CC Navy EC Air Force 85 Project NASA NA DLA CC Review activities: Army M, SM Navy AS, CG, MC, SH Air Force 0, 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSST Online database at 1