EE 505. Lecture 11. Offset Voltages DAC Design

Size: px
Start display at page:

Download "EE 505. Lecture 11. Offset Voltages DAC Design"

Transcription

1 EE 505 Lecture 11 Offset Voltages DC Design

2 Offset Voltages ll DCs have comparators and many DCs and DCs have operational amplifiers The offset voltages of both amplifiers and comparators are random variables and invariably are key factors affecting the performance of a data converter Operational mplifiers: Generally differential amplifiers whose offset is dominantly determined by randomness in the first stage Comparators: High Gain Operational mplifiers Latching Structures (often clocked) Combination of High Gain mplifiers and Latching Structures Offset voltages of high-gain amplifiers well understood Offset voltage of Latching Structures often difficult to determine and can be very large

3 Consider First Offset in Operational mplifiers V 1 V Differential mplifier Input-referred Offset Voltage: Differential Voltage that must be applied to the input to make the output assume its desired value Note: With a good design, a designer will have at the desired value if the components assume the values used in the design ny difference in the output from what is desired when components assume the nominal values used in a design is attributable to a systematic offset voltage

4 nalysis of Offset Voltage Review from previous lecture: but VT 0 Cox L W V T R C OXR L R W R WL WL WL WL W L C L W N OXN N N So the offset variance can be expressed as L VTn0 p 1 VTp0 V OS W1L 1 nw1 L3 plw n p VEB3 Cox W L nl3w 1 W3L3 W1L 1 W3L3 W1L 1 W3 L3 W1 L1 W1L 1 W3L3 Often this can be approximated by 0 pl1 VTp 0 plw VTn 1 1 n p V V OS EB3 Cox W1L 1 nw1 L3 nl3w 1 W3L3 W1L 1 W3L3 W1L 1 Or even approximated by L VTn0 p 1 VTp0 V OS W1L 1 nw1 L3

5 Offset Voltage Two types of offset voltage: Systematic Offset Voltage Random Offset Voltage V ICQ Definition: The output offset voltage is the difference between the desired output and the actual output when V id =0 and V ic is the quiescent commonmode input voltage. OFF = - VOUTDES Note: OFF is dependent upon V ICQ although this dependence is usually quite weak and often not specified

6 Offset Voltage V OFF V ICQ Definition: The input-referred offset voltage is the differential dc input voltage that must be applied to obtain the desired output when V ic is the quiescent common-mode input voltage. Note: V OFF is usually related to the output offset voltage by the expression V V OUTOFF OFF= C Note: V OFF is dependent upon V ICQ although this dependence is usually quite weak and often not specified

7 Offset Voltage Two types of offset voltage: Systematic Offset Voltage Random Offset Voltage V ICQ fter fabrication it is impossible (difficult) to distinguish between the systematic offset and the random offset in any individual op amp Measurements of offset voltages for a large number of devices will provide mechanism for identifying systematic offset and statistical Characteristics of the random offset voltage

8 Systematic Offset Voltage Offset voltage that is present if all device and model parameters assume their nominal value Easy to simulate the systematic offset voltage lmost always the designer s responsibility to make systematic offset voltage very small Generally easy to make the systematic offset voltage small Can tweak out systematic offset after design is almost done Random Offset Voltage Due to random variations in process parameters and device dimensions Random offset is actually a random variable at the design level but deterministic after fabrication in any specific device Distribution of native offset nearly Gaussian (If offset compensation is not employed) Has zero mean Characterized by its standard deviation or variance Often strongly layout dependent

9 Offset Voltage V OS Can be modeled as a dc voltage source in series with the input

10 Offset Voltage Effects of Offset Voltage - an example V IN R 1 R Desired I/O relationship V M t V IN

11 Effects of Offset Voltage - an example Desired I/O relationship Offset Voltage V IN R 1 R V M t ctual I/O relationship due to offset V IN V M t V IN V M t V IN

12 Offset Voltage V OS V OS Effects can be reduced or eliminated by adding equal amplitude opposite phase DC signal (many ways to do this) One such technique is dynamic offset compensation Widely used in offset-critical applications Comes at considerable effort and expense Prefer to have designer make V OS small in the first place though penalty for making it sufficiently small without correction is often unacceptable

13 Dynamic Offset Compensation V OS V OS Most basic dynamic offset compensation at input

14 Effects of Offset Voltage Deviations in performance will change from one instantiation to another due to the random component of the offset Particularly problematic in high-gain circuits major problem in many other applications Not of concern in many applications as well

15 Offset Voltage Distribution number Offset Voltage Bins Typical histogram of native offset voltage (binned) after fabrication

16 Offset Voltage Distribution Gaussian (Normal) pdf number Offset Voltage Bins Typical histogram of offset voltage (binned) after fabrication Mean is nearly 0 (actually the systematic offset voltage)

17 Offset Voltage Distribution number Offset Voltage Bins Typical histogram of offset voltage (binned) in shipped parts when entire population used for a single produce Extreme offset parts have been sifted at test

18 Offset Voltage Distribution number Offset Voltage Bins Typical histogram of offset voltage (binned) in shipped parts Low-offset parts sold at a premium Extreme offset parts have been sifted at test

19 Source of Random Offset Voltages Consider as an example: R 1 R M 1 M V SS Ideally R 1 =R =R N, M 1 and M are matched I V = V - T R OUT DD N ssume this is the desired output voltage

20 Source of Random Offset Voltages Consider as an example: R 1 R M 1 M If everything ideal except R 1 =and R I V T OUT-R = - R V SS R 1 =R N +R R1 R =R N +R R Thus at the design stage, is also a random variable IT V OUT = VDD- R N +RR R

21 Source of Random Offset Voltages Consider as an example: R 1 R R 1 R M 1 M -V d / M 1 M V d / V SS V SS g m VN = - R N

22 Source of Random Offset Voltages Determine the offset voltage i.e. value of V X needed to obtain desired output R N +R R1 R N +R R V X M 1 M g m V = - R N IT I V T OUT= VDD - RN - R R - VVX I V T OUT-DES= VDD - RN Setting =-DES and solving for V X, we obtain V SS -1 I V =V T R X OFF R V

23 Source of Random Offset Voltages Determine the offset voltage i.e. value of V X needed to obtain desired output R N +R R1 R N +R R V X M 1 M V SS g m V = - R -1 I V =V T R X OFF R V I I R I R R V X= R R = VEB g R g R I /V R R T T R T R R m N m N T EB N N V = V OS EB R R R N

24 Source of Random Offset Voltages Determine the offset voltage i.e. value of V X needed to obtain desired output R N +R R1 R N +R R V X M 1 M V SS If resistors are integrated and is the resistor area R R R N = R V = V OS VOS EB = V R R R N R EB R R N where R is the Pelgrom parameter Thus VOS = V EB R

25 Source of Random Offset Voltages The random offset voltage is almost entirely that of the input stage in most op amps V X M 3 M 4 V X M 3 M 4 V 1 M 1 M V S V V 1 M 1 M V V S (a) (b)

26 Random Offset Voltages Bulk Source Gate Drain Bulk Source n-channel MOSFET Gate Drain n-channel MOSFET Impurities vary randomly with position as do edges of gate, oxide and diffusions Model and design parameters vary throughout channel and thus the corresponding equivalent lumped model parameters will vary from device to device

27 Random Offset Voltages The random offset is due to missmatches in the four transistors, dominantly missmatches in the parameters {V T, μ,c OX,W and L} V X M 3 M 4 The relative missmatch effects become more pronounced as devices become smaller V 1 M 1 M V S V V Ti =V TN +V TRi C OXi =C OXN +C OXRi μ i =μ N +μ Ri W i =W N +W Ri L i =L N +L Ri Each design and model parameter is comprised of a nominal part and a random component

28 Random Offset Voltages V Ti =V TN +V TRi V X M 3 M 4 C OXi =C OXN +C OXRi μ i =μ N +μ Ri V 1 M 1 M V S V W i =W N +W Ri L i =L N +L Ri For each device, the device model is often expressed as μn μri COXN COXRi W N+WRi L L I = V -(V V ) 1+ λ +λ V Di GSi TN TRi N Ri DS N Ri Because of the random components of the parameters in every device, matching from the left-half circuit to the right half-circuit is not perfect This mismatch introduces an offset voltage which is a random variable

29 Offset Voltages V X M 3 M 4 I 3 I 4 I 1 I V OFF V INC M 1 M V S V INC R L V XX ssume currents at output node must satisfy relation I =I 4 Strategy: 1) Obtain expression for V OFF (referred to input) that forces I =I 4 ) Linearize expression in terms of design variables and decorrelate 3) Obtain σ VOS

30 nalysis of Offset Voltage μ C W I = V +V -V -V n1 OX1 1 D1 OFF INC S TH1 L1 μ C W I = V -V -V n OX D INC S TH L μ C W I = V -V -V p3 OX3 3 D3 X DD TH3 L3 μ C W I = V -V -V p4 OX4 4 D4 X DD TH4 L4 V X M 3 M 4 I 3 I 4 I 1 I M 1 M V OFF V S V INC V INC R L V XX Since I I D1 D3 μ C W L V +V -V -V = V -V -V OFF p3 OX3 3 1 INC S TH1 X DD TH3 μn1cox1w1 L3 Since I I D D4 μ C W L V -V -V = V -V -V p4 OX4 4 INC S TH X DD TH4 μncoxw L4

31 nalysis of Offset Voltage Define: L1 p3cox 3W3 a L C W 3 n1 OX1 1 b L C W p4 OX 4 4 L C W 4 n OX V X M 3 M 4 I 3 I 4 Substituting for a and b, it follows on eliminating V S that I 1 I ssume V V V X XN XR a a a N b b b N R R VTni VTnN VTnRi i 1, V V V i 3,4 Tpi TpN TpRi V V V a b V -V bv av OFF TH1 TH X DD TH4 TH3 V OFF V INC M 1 M V S V INC R L V XX Observe a N =b N and V XN - -V TpN =V EB3 Since the random part of V X multiplies only a-b which is small, it follows that V V an V VEB 3N V OFF TnR TpR ar br Will now obtain a R and b R V V V a b V bv av OFF TH1 TH EB3N TH4 TH3 V V V a b V a V V OFF THR1 THR R R EB3N N THR 4 THR3

32 nalysis of Offset Voltage V V V b a V a V V OFF TnR TnR R R EB3 N TpR 3 TpR 4 V X M 3 M 4 I 3 I 4 a LN 1 LR1 Np3 R3 COXN3 COXR3 WN 3 WR 3 L L C C W W N3 R3 Nn1 R1 OXN1 OXR1 N1 R1 x Recall for x small, 1 x 1 Likewise b R x x L W 1 L L C C W W a 1 L W L L C C W W Thus L 1 3W 3 N Np N 1 LR1 L R R R C C W W a OXR OXR R R R LN Nn WN LN 1 LN 3 N 3 N1 COXN 3 COXN1 WN 3 WN 3 a N N 1 Np 3 N 3 R1 R 3 R 3 R1 OXR 3 OXR 1 R 3 R 3 N3 Nn1 N1 N1 N3 Np3 Nn1 OXN 3 OXN1 N3 N3 L L W N1 Np3 N 3 W N 3 Nn1 N1 M 1 M L W 1 L L C C W W L W L L C C W W N1 Np3 N 3 R R 4 R 4 R OXR 4 OXR R 4 R V OFF N 3 Nn1 N1 N N 4 Np4 Nn OXN 4 OXN N 4 N V INC I 1 I V S V INC R L V XX

33 nalysis of Offset Voltage V X M 3 M 4 I 3 I 4 I 1 I V OFF V INC M 1 M V S V INC R L V XX a R b R LR1 LR LR 4 LR3 R3 R4 R R1 LN 1Np3W N3 1 LN 1 LN LN 4 LN 3 Np3 Np4 Nn Nn1 L W C C C C W W W W C C C C W W W W N3 Nn1 N1 OXR3 OXR 4 OXR OXR1 R3 R4 R R3 OXN3 OXN 4 OXN OXN1 N 3 N 4 N N 3 L W 1 N1 Np3 N3 a b L L C C W W N3 Nn1 N1 L L C C W W L W R R R R R R OXR OXR R R N1 N 3 Np3 Nn OXN 3 OXN 1 N 3 N1 Thus L N1 Np3WN 3 V V V L W OFF TnR TpR 3 N3 Nn1 N1 L W 1 V N 3 Np 3 OXN 3 OXN 1 N 3 N1 Np3 N3 EB3 L L C C W W LN 3Nn1WN 1 L L C C W W R1 R 3 R 3 R OXR 3 OXR1 R 3 R1 N1 Nn N1

34 nalysis of Offset Voltage but VT 0 Cox L W V T R C OXR L R W R WL WL WL WL W L C L W N OXN N N So the offset variance can be expressed as V OFF V INC V X M 3 M 4 I 3 I 4 I 1 I M 1 M V S V INC R L V XX pl VTn W L W L 0 1 VTp0 VOFF 1 1 n 1 3 plw n p VEB3 Cox W L nl3w 1 W3L3 W1L 1 W3L3 W1L 1 W3 L3 W1 L1 W1L 1 W3L3 Often this can be approximated by 0 pl1 VTp 0 plw VTn 1 1 n p V V 3 OFF EB Cox W1L 1 nw1 L3 nl3w 1 W3L3 W1L 1 W3L3 W1L 1 Or even approximated by pl VTn W L W L 0 1 VTp0 VOFF 1 1 n 1 3

35 Random Offset Voltages Since V EBn and V EBp are related, this is often expressed in simpler form as: μ μ COX + VTO n μ W L W L W L W L p L n V EB n σ + + VOS VTO p W nl n μ n W nl 4 p L + + w + W n L n W p L p L n W n L p W p n p n n p p n n p p where the terms VT0, μ, COX, L, and W are process parameters 1mV μ (n-ch) VT0 5mV μ (p-ch) μ+ C OX.016μ (n-ch).03μ (p-ch) V X M 3 M 4 L=W 0.017μ VTO n μ p L n VOS W VTO p n L n μ n W n L p σ + 3 Usually the VT0 terms are dominant, thus the variance simplifies to V 1 M 1 M V S V

36 Correspondingly: Random Offset Voltages V OS Wn L VTOn n p n L n n p W L VTOp V EBn 4 1 Wn L n L n 1 Wn L n 1 W L p p 1 p W L p p COX w L 1 W L n 1 n W n n L 1 W L p 1 p W p p which again simplifies to VTO n μ p L n VOS W VTO p n L n μ n W n L p σ + V X M 3 M 4 V 1 M 1 M V V S Note these offset voltage expressions are identical!

37 Random Offset Voltages Example: Determine the 3σ value of the input offset voltage for The MOS differential amplifier is a) M 1 and M 3 are minimum-sized and b) the area of M 1 and M 3 are 100 times minimum size V X a) VTO n μ p L n VOS W VTO p n L n μ n W n L p σ + μ p σ V + OS W VTO n VTO p n L n μ n 1 σ OS V σ V OS 7mV M 3 M 4 V 1 M 1 M V V S 3 σ 16mV V OS Note this is a very large offset voltage!

38 Random Offset Voltages Example: Determine the 3σ value of the input offset voltage for The MOS differential amplifier is a) M 1 and M 3 are minimum-sized and b) the area of M 1 and M 3 are 100 times minimum size VTO n μ p L n VOS W VTO p n L n μ n W n L p μ p σ + VOS W VTO n VTO p n L n μ n σ + b) 1 σ VOS V X M 3 M 4 V 1 M 1 M V V S σ V OS 7.mV 3 σ 1.6mV V OS Note this is much lower but still a large offset voltage! The area of M 1 and M 3 needs to be very large to achieve a low offset voltage

39 Random Offset Voltages V CC V CC Q 3 V X Q 4 Q 3 V X Q 4 V 1 Q 1 Q V V 1 Q 1 Q V V E V E (a) (b) It can be shown that V OS where very approximately V Jn t + En = = 0.1μ Jn Jp Jp Ep

40 Random Offset Voltages V CC Example: Determine the 3σ value of the offset voltage of a the bipolar input stage if E1 = E3 =10μ Q 3 V X Q 4 V OS Jn V t + En Jp Ep V 1 Q 1 V E Q V V OS V t J E 1 5mV 0.1μ 1.6mV V OS 10μ 3 4.7mV V OS Note this value is much smaller than that for the MOS input structure!

41 Random Offset Voltages Typical offset voltages: MOS - 5mV to 50MV BJT - 0.5mV to 5mV These can be scaled with extreme device dimensions Often more practical to include offset-compensation circuitry

42 Offset voltage difficult to determine in come classes of comparators 1 1 M 13 M 5 M 6 M 14 V V 1 C 1 M 11 M 1 1 C 1 M 3 M 4 V IN M 7 M 8 V REF Dynamic clocked comparator When φ 1 is low, V 1 and V are precharged to and no static power is dissipated When φ 1 is high, enters evaluate state and no static power is dissipated

43 Offset voltage difficult to determine in come classes of comparators VDD Very small, very fast, low power 1 1 V C 1 M13 M5 M6 M11 M1 M14 1 V1 C1 But offset voltage can be large (100mV or more) M3 M4 VIN M7 M8 VREF Dynamic clocked comparator H V 1 or V Metastable Output L V or V 1 CLK Transition Decision is being made shortly after clock transition when devices are deep in weak inversion and signal levels are very small

44 dditional details about offset voltage, statistical circuit analysis, and matching can be found in the draft document Statistical Characterization of Circuit Functions by R.L. Geiger

45 Summary of Offset Voltage Issues Random offset voltage is generally dominant and due to mismatch in device and model parameters MOS Devices have large V OS if area is small σ decreases approximately with Multiple fingers for MOS devices 1/ offer benefits for common centroid layouts but too many fingers will ultimately degrade offset because perimeter/area ration will increase ( W and L will become of concern) Offset voltage of dynamic comparators is often large and analysis not straightforward Offset compensation often used when low offsets important MOS: Bipolar: VTO n μ p L n VOS W VTO p n L n μ n W n L p σ + V OS Jn V t + En Jp Ep

46 End of Lecture 11

EE 435. Lecture 22. Offset Voltages Common Mode Feedback

EE 435. Lecture 22. Offset Voltages Common Mode Feedback EE 435 Lecture Offset Voltages Common Mode Feedback Review from last lecture Offset Voltage Two types of offset voltage: Systematic Offset Voltage Random Offset Voltage V ICQ Definition: The output offset

More information

EE 435. Lecture 22. Offset Voltages

EE 435. Lecture 22. Offset Voltages EE 435 Lecture Offset Voltages . Review from last lecture. Offset Voltage Definition: The input-referred offset voltage is the differential dc input voltage that must be applied to obtain the desired output

More information

EE 435. Lecture 23. Common Mode Feedback Data Converters

EE 435. Lecture 23. Common Mode Feedback Data Converters EE 435 Lecture 3 Common Mode Feedback Data Converters Review from last lecture Offset Voltage Distribution Pdf of zero-mean Gaussian distribution f(x) -kσ kσ x Percent between: ±σ 68.3% ±σ 95.5% ±3σ 99.73%

More information

EE 505 Lecture 11. Statistical Circuit Modeling. R-string Example Offset Voltages

EE 505 Lecture 11. Statistical Circuit Modeling. R-string Example Offset Voltages EE 505 Lecture 11 Statistical Circuit Modeling -string Example Offset oltages eview from previous lecture: Current Steering DAC Statistical Characterization Binary Weighted IL b= 1 1 IGk 1 1 I

More information

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )

More information

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow EE 330 Lecture 16 MOSFET Modeling CMOS Process Flow Model Extensions 300 Id 250 200 150 100 50 300 0 0 1 2 3 4 5 Vds Existing Model 250 200 Id 150 100 50 Slope is not 0 0 0 1 2 3 4 Actual Device Vds Model

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)

Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B) 1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed

More information

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow

EE 330 Lecture 16. MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow EE 330 Lecture 16 MOS Device Modeling p-channel n-channel comparisons Model consistency and relationships CMOS Process Flow Review from Last Time Operation Regions by Applications Id I D 300 250 200 150

More information

EE 330 Lecture 17. MOSFET Modeling CMOS Process Flow

EE 330 Lecture 17. MOSFET Modeling CMOS Process Flow EE 330 Lecture 17 MOSFET Modeling CMOS Process Flow Review from Last Lecture Limitations of Existing Models V DD V OUT V OUT V DD?? V IN V OUT V IN V IN V DD Switch-Level Models V DD Simple square-law

More information

EE 434 Lecture 33. Logic Design

EE 434 Lecture 33. Logic Design EE 434 Lecture 33 Logic Design Review from last time: Ask the inverter how it will interpret logic levels V IN V OUT V H =? V L =? V LARGE V H V L V H Review from last time: The two-inverter loop X Y X

More information

EE 505. Lecture 14. Offset Voltages DAC Design

EE 505. Lecture 14. Offset Voltages DAC Design EE 505 Lecture 14 Offset Voltages DAC Desig Review from previous lecture: Cosider First Offset i Operatioal Amplifiers Iput-referred Offset Voltage: Differetial Voltage that must be applied to the iput

More information

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar

More information

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: n-channel MOSFET Source Gate L Drain W L EFF Poly Gate oxide n-active p-sub depletion region (electrically

More information

EE 330 Lecture 31. Current Source Biasing Current Sources and Mirrors

EE 330 Lecture 31. Current Source Biasing Current Sources and Mirrors EE 330 Lecture 31 urrent Source Biasing urrent Sources and Mirrors eview from Last Lecture Basic mplifier Gain Table DD DD DD DD in B E out in B E out E B BB in E out in B E E out in 2 D Q EE SS E/S /D

More information

EECS240 Spring Lecture 21: Matching. Elad Alon Dept. of EECS. V i+ V i-

EECS240 Spring Lecture 21: Matching. Elad Alon Dept. of EECS. V i+ V i- EECS40 Spring 010 Lecture 1: Matching Elad Alon Dept. of EECS Offset V i+ V i- To achieve zero offset, comparator devices must be perfectly matched to each other How well-matched can the devices be made?

More information

ECE 342 Electronic Circuits. 3. MOS Transistors

ECE 342 Electronic Circuits. 3. MOS Transistors ECE 342 Electronic Circuits 3. MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to

More information

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices

EE 330. Lecture 35. Parasitic Capacitances in MOS Devices EE 330 Lecture 35 Parasitic Capacitances in MOS Devices Exam 2 Wed Oct 24 Exam 3 Friday Nov 16 Review from Last Lecture Cascode Configuration Discuss V CC gm1 gm1 I B VCC V OUT g02 g01 A - β β VXX Q 2

More information

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics Lena Peterson 2015-10-13 Outline (1) Why is the CMOS inverter gain not infinite? Large-signal

More information

EE 330 Lecture 18. Small-signal Model (very preliminary) Bulk CMOS Process Flow

EE 330 Lecture 18. Small-signal Model (very preliminary) Bulk CMOS Process Flow EE 330 Lecture 18 Small-signal Model (very preliminary) Bulk CMOS Process Flow Review from Last Lecture How many models of the MOSFET do we have? Switch-level model (2) Square-law model Square-law model

More information

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR

EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX = - 4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3

More information

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2

More information

Design of Analog Integrated Circuits

Design of Analog Integrated Circuits Design of Analog Integrated Circuits Chapter 11: Introduction to Switched- Capacitor Circuits Textbook Chapter 13 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

EECS 105: FALL 06 FINAL

EECS 105: FALL 06 FINAL University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 2-3:30 Wednesday December 13, 12:30-3:30pm EECS 105: FALL 06 FINAL NAME Last

More information

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow

EE 330 Lecture 16. MOSFET Modeling CMOS Process Flow EE 330 Lecture 16 MOFET Modeling CMO Process Flow Review from Last Lecture Limitations of Existing Models V V OUT V OUT V?? V IN V OUT V IN V IN V witch-level Models V imple square-law Model Logic ate

More information

EE 435. Lecture 2: Basic Op Amp Design. - Single Stage Low Gain Op Amps

EE 435. Lecture 2: Basic Op Amp Design. - Single Stage Low Gain Op Amps EE 435 ecture 2: Basic Op mp Design - Single Stage ow Gain Op mps 1 Review from last lecture: How does an amplifier differ from an operational amplifier?? Op mp mplifier mplifier used in open-loop applications

More information

The Physical Structure (NMOS)

The Physical Structure (NMOS) The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two

More information

Lecture 320 Improved Open-Loop Comparators and Latches (3/28/10) Page 320-1

Lecture 320 Improved Open-Loop Comparators and Latches (3/28/10) Page 320-1 Lecture 32 Improved OpenLoop Comparators and es (3/28/1) Page 321 LECTURE 32 IMPROVED OPENLOOP COMPARATORS AND LATCHES LECTURE ORGANIZATION Outline Autozeroing Hysteresis Simple es Summary CMOS Analog

More information

EE247 Lecture 16. Serial Charge Redistribution DAC

EE247 Lecture 16. Serial Charge Redistribution DAC EE47 Lecture 16 D/A Converters D/A examples Serial charge redistribution DAC Practical aspects of current-switch DACs Segmented current-switch DACs DAC self calibration techniques Current copiers Dynamic

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Lecture 12: MOSFET Devices

Lecture 12: MOSFET Devices Lecture 12: MOSFET Devices Gu-Yeon Wei Division of Engineering and Applied Sciences Harvard University guyeon@eecs.harvard.edu Wei 1 Overview Reading S&S: Chapter 5.1~5.4 Supplemental Reading Background

More information

EE105 - Fall 2005 Microelectronic Devices and Circuits

EE105 - Fall 2005 Microelectronic Devices and Circuits EE105 - Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture

More information

ECE 546 Lecture 11 MOS Amplifiers

ECE 546 Lecture 11 MOS Amplifiers ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase

More information

ECE 546 Lecture 10 MOS Transistors

ECE 546 Lecture 10 MOS Transistors ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor N-Channel MOSFET Built on p-type

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

EE 435. Lecture 16. Compensation Systematic Two-Stage Op Amp Design

EE 435. Lecture 16. Compensation Systematic Two-Stage Op Amp Design EE 435 Lecture 6 Compensation Systematic Two-Stage Op Amp Design Review from last lecture Review of Basic Concepts Pole Locations and Stability Theorem: A system is stable iff all closed-loop poles lie

More information

Chapter 20. Current Mirrors. Basics. Cascoding. Biasing Circuits. Baker Ch. 20 Current Mirrors. Introduction to VLSI

Chapter 20. Current Mirrors. Basics. Cascoding. Biasing Circuits. Baker Ch. 20 Current Mirrors. Introduction to VLSI Chapter 20 Current Mirrors Basics Long Channel Matching Biasing Short Channel Temperature Subthreshold Cascoding Simple Low Voltage, Wide Swing Wide Swing, Short Channel Regulated Drain Biasing Circuits

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region

EE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel

More information

CMOS Comparators. Kyungpook National University. Integrated Systems Lab, Kyungpook National University. Comparators

CMOS Comparators. Kyungpook National University. Integrated Systems Lab, Kyungpook National University. Comparators IsLab Analog Integrated ircuit Design OMP-21 MOS omparators כ Kyungpook National University IsLab Analog Integrated ircuit Design OMP-1 omparators A comparator is used to detect whether a signal is greater

More information

Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model

Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model Content- MOS Devices and Switching Circuits Review of Band Energy Diagrams MIS & MOS Capacitor MOS TRANSISTORS MOSFET Capacitances MOSFET Static Model A Cantoni 2009-2013 Digital Switching 1 Content- MOS

More information

ELEN 610 Data Converters

ELEN 610 Data Converters Spring 04 S. Hoyos - EEN-60 ELEN 60 Data onverters Sebastian Hoyos Texas A&M University Analog and Mixed Signal Group Spring 04 S. Hoyos - EEN-60 Electronic Noise Signal to Noise ratio SNR Signal Power

More information

EE 330 Lecture 37. Digital Circuits. Other Logic Families. Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates)

EE 330 Lecture 37. Digital Circuits. Other Logic Families. Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates) EE 330 Lecture 37 Digital Circuits Other Logic Families Static Power Dissipation Propagation Delay basic characterization Device Sizing (Inverter and multiple-input gates) Review from Last Time Inverter

More information

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120

ECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of

More information

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 LECTURE 310 OPEN-LOOP COMPARATORS LECTURE ORGANIZATION Outline Characterization of comparators Dominant pole, open-loop comparators Two-pole, open-loop

More information

ECE 342 Solid State Devices & Circuits 4. CMOS

ECE 342 Solid State Devices & Circuits 4. CMOS ECE 34 Solid State Devices & Circuits 4. CMOS Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input

More information

Chapter 2 CMOS Transistor Theory. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan

Chapter 2 CMOS Transistor Theory. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Chapter 2 CMOS Transistor Theory Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor Jin-Fu Li, EE,

More information

EE 330 Lecture 6. Improved Switch-Level Model Propagation Delay Stick Diagrams Technology Files

EE 330 Lecture 6. Improved Switch-Level Model Propagation Delay Stick Diagrams Technology Files EE 330 Lecture 6 Improved witch-level Model Propagation elay tick iagrams Technology Files Review from Last Time MO Transistor Qualitative iscussion of n-channel Operation Bulk ource Gate rain rain G Gate

More information

EE 505 Lecture 10. Statistical Circuit Modeling

EE 505 Lecture 10. Statistical Circuit Modeling EE 505 Lecture 10 Statistical Circuit Modeling mplifier Gain ccuracy eview from previous lecture: - + eview from previous lecture: String DC Statistical Performance 1 1 k k k ILk j 1 j 1 k 1 OM j1 1 1

More information

Lecture 29 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 20, 2007

Lecture 29 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 20, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 29-1 Lecture 29 - The Long Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 20, 2007 Contents: 1. Non-ideal and second-order

More information

VLSI Design Issues. ECE 410, Prof. F. Salem/Prof. A. Mason notes update

VLSI Design Issues. ECE 410, Prof. F. Salem/Prof. A. Mason notes update VLSI Design Issues Scaling/Moore s Law has limits due to the hysics of material. Now L (L=20nm??) affects tx delays (seed), noise, heat (ower consumtion) Scaling increases density of txs and requires more

More information

Topics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut

Topics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut Topics Dynamic CMOS Sequential Design Memory and Control Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND or V DD via a low resistance

More information

4.10 The CMOS Digital Logic Inverter

4.10 The CMOS Digital Logic Inverter 11/11/2004 section 4_10 The CMOS Digital Inverter blank.doc 1/1 4.10 The CMOS Digital Logic Inverter Reading Assignment: pp. 336346 Complementary MOSFET (CMOS) is the predominant technology for constructing

More information

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1 Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset

More information

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design EE 435 Lecture 3 Spring 2016 Design Space Exploration --with applications to single-stage amplifier design 1 Review from last lecture: Single-ended Op Amp Inverting Amplifier V IN R 1 V 1 R 2 A V V OUT

More information

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model EE 330 Lecture 25 Amplifier Biasing (precursor) Two-Port Amplifier Model Review from Last Lecture Exam Schedule Exam 2 Friday March 24 Review from Last Lecture Graphical Analysis and Interpretation 2 OX

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures

More information

MOS Transistor Theory

MOS Transistor Theory MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors

More information

Lecture 25. Semiconductor Memories. Issues in Memory

Lecture 25. Semiconductor Memories. Issues in Memory Lecture 25 Semiconductor Memories Issues in Memory Memory Classification Memory Architectures TheMemoryCore Periphery 1 Semiconductor Memory Classification RWM NVRWM ROM Random Access Non-Random Access

More information

Practice 3: Semiconductors

Practice 3: Semiconductors Practice 3: Semiconductors Digital Electronic Circuits Semester A 2012 VLSI Fabrication Process VLSI Very Large Scale Integration The ability to fabricate many devices on a single substrate within a given

More information

Semiconductor Memory Classification

Semiconductor Memory Classification Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH

More information

Random Offset in CMOS IC Design

Random Offset in CMOS IC Design Random Offset in CMOS C esign ECEN487/587 Analog C esign October 19, 007 Art Zirger, National Semiconductor art.zirger@nsc.com 303-845-404 Where to start? How do we choose what transistor sizes to use

More information

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering

2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering 007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits Deog-Kyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we

More information

Lecture 400 Discrete-Time Comparators (4/8/02) Page 400-1

Lecture 400 Discrete-Time Comparators (4/8/02) Page 400-1 Lecture 400 DiscreteTime omparators (4/8/02) Page 4001 LETURE 400 DISRETETIME OMPARATORS (LATHES) (READING: AH 475483) Objective The objective of this presentation is: 1.) Illustrate discretetime comparators

More information

Nyquist-Rate A/D Converters

Nyquist-Rate A/D Converters IsLab Analog Integrated ircuit Design AD-51 Nyquist-ate A/D onverters כ Kyungpook National University IsLab Analog Integrated ircuit Design AD-1 Nyquist-ate MOS A/D onverters Nyquist-rate : oversampling

More information

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor

Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the

More information

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions

P. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the

More information

MOS Transistor I-V Characteristics and Parasitics

MOS Transistor I-V Characteristics and Parasitics ECEN454 Digital Integrated Circuit Design MOS Transistor I-V Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes

More information

4.5 (A4.3) - TEMPERATURE INDEPENDENT BIASING (BANDGAP)

4.5 (A4.3) - TEMPERATURE INDEPENDENT BIASING (BANDGAP) emp. Indep. Biasing (7/14/00) Page 1 4.5 (A4.3) - EMPERAURE INDEPENDEN BIASING (BANDGAP) INRODUCION Objective he objective of this presentation is: 1.) Introduce the concept of a bandgap reference 2.)

More information

CMOS Inverter (static view)

CMOS Inverter (static view) Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies. Philips Research, The Netherlands

Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies. Philips Research, The Netherlands Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies Hans Tuinhout, The Netherlands motivation: from deep submicron digital ULSI parametric spread

More information

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design EE 435 ecture 3 Spring 2019 Design Space Exploration --with applications to single-stage amplifier design 1 Review from last lecture: Single-ended Op Amp Inverting Amplifier V IN R 1 V 1 R 2 A V V OUT

More information

Exam 2 Fall How does the total propagation delay (T HL +T LH ) for an inverter sized for equal

Exam 2 Fall How does the total propagation delay (T HL +T LH ) for an inverter sized for equal EE 434 Exam 2 Fall 2006 Name Instructions. Students may bring 2 pages of notes to this exam. There are 10 questions and 5 problems. The questions are worth 2 points each and the problems are all worth

More information

Semiconductor Memories

Semiconductor Memories Semiconductor References: Adapted from: Digital Integrated Circuits: A Design Perspective, J. Rabaey UCB Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in

More information

LECTURE 3 MOSFETS II. MOS SCALING What is Scaling?

LECTURE 3 MOSFETS II. MOS SCALING What is Scaling? LECTURE 3 MOSFETS II Lecture 3 Goals* * Understand constant field and constant voltage scaling and their effects. Understand small geometry effects for MOS transistors and their implications modeling and

More information

EE 435. Lecture 37. Parasitic Capacitances in MOS Devices. String DAC Parasitic Capacitances

EE 435. Lecture 37. Parasitic Capacitances in MOS Devices. String DAC Parasitic Capacitances EE 435 Lecture 37 Parasitic Capacitances in MOS Devices String DAC Parasitic Capacitances Parasitic Capacitors in MOSFET (will initially consider two) Parasitic Capacitors in MOSFET C GCH Parasitic Capacitors

More information

Lecture 11: J-FET and MOSFET

Lecture 11: J-FET and MOSFET ENE 311 Lecture 11: J-FET and MOSFET FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.

More information

EE105 Fall 2014 Microelectronic Devices and Circuits

EE105 Fall 2014 Microelectronic Devices and Circuits EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

Digital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories

Digital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories Digital Integrated Circuits A Design Perspective Semiconductor Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies Semiconductor Memory Classification

More information

OPERATIONAL AMPLIFIER ª Differential-input, Single-Ended (or Differential) output, DC-coupled, High-Gain amplifier

OPERATIONAL AMPLIFIER ª Differential-input, Single-Ended (or Differential) output, DC-coupled, High-Gain amplifier à OPERATIONAL AMPLIFIERS à OPERATIONAL AMPLIFIERS (Introduction and Properties) Phase relationships: Non-inverting input to output is 0 Inverting input to output is 180 OPERATIONAL AMPLIFIER ª Differential-input,

More information

EE 321 Analog Electronics, Fall 2013 Homework #3 solution

EE 321 Analog Electronics, Fall 2013 Homework #3 solution EE 32 Analog Electronics, Fall 203 Homework #3 solution 2.47. (a) Use superposition to show that the output of the circuit in Fig. P2.47 is given by + [ Rf v N + R f v N2 +... + R ] f v Nn R N R N2 R [

More information

Class AB Output Stage

Class AB Output Stage Class AB Output Stage Class AB amplifier Operation Multisim Simulation - VTC Class AB amplifier biasing Widlar current source Multisim Simulation - Biasing 1 Class AB Operation v I V B (set by V B ) Basic

More information

EEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced

More information

6.012 Electronic Devices and Circuits

6.012 Electronic Devices and Circuits Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to

More information

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually

More information

Announcements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power

Announcements. EE141- Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power - Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 12-3pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances

More information

Analysis and Design of Analog Integrated Circuits Lecture 14. Noise Spectral Analysis for Circuit Elements

Analysis and Design of Analog Integrated Circuits Lecture 14. Noise Spectral Analysis for Circuit Elements Analysis and Design of Analog Integrated Circuits Lecture 14 Noise Spectral Analysis for Circuit Elements Michael H. Perrott March 18, 01 Copyright 01 by Michael H. Perrott All rights reserved. Recall

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

Power Consumption in CMOS CONCORDIA VLSI DESIGN LAB

Power Consumption in CMOS CONCORDIA VLSI DESIGN LAB Power Consumption in CMOS 1 Power Dissipation in CMOS Two Components contribute to the power dissipation:» Static Power Dissipation Leakage current Sub-threshold current» Dynamic Power Dissipation Short

More information

EE247 Analog-Digital Interface Integrated Circuits

EE247 Analog-Digital Interface Integrated Circuits EE247 Analog-Digital Interface Integrated Circuits Fall 200 Name: Zhaoyi Kang SID: 22074 ******************************************************************************* EE247 Analog-Digital Interface Integrated

More information

EE 330 Class Seating

EE 330 Class Seating 1 2 3 4 5 6 EE 330 Class Seating 1 2 3 4 5 6 7 8 Zechariah Daniel Liuchang Andrew Brian Difeng Aimee Julien Di Pettit Borgerding Li Mun Crist Liu Salt Tria Erik Nick Bijan Wing Yi Pangzhou Travis Wentai

More information

Power Dissipation. Where Does Power Go in CMOS?

Power Dissipation. Where Does Power Go in CMOS? Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit

More information

Review - Differential Amplifier Basics Difference- and common-mode signals: v ID

Review - Differential Amplifier Basics Difference- and common-mode signals: v ID 6.012 Microelectronic Devices and Circuits Lecture 20 DiffAmp Anal. I: Metrics, Max. Gain Outline Announcements Announcements D.P.: No Early effect in large signal analysis; just LECs. Lec. 21 foils useful;

More information

ELEC 3908, Physical Electronics, Lecture 27. MOSFET Scaling and Velocity Saturation

ELEC 3908, Physical Electronics, Lecture 27. MOSFET Scaling and Velocity Saturation ELEC 3908, Physical Electronics, Lecture 27 MOSFET Scaling and Velocity Saturation Lecture Outline Industry push is always to pack more devices on a chip to increase functionality, which requires making

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information