EE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR


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1 EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
2 Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ=
3 And the number is? ?
4 Quiz 3 (solution) Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= I G = V V GS T W V = < L 2 W 2 μc ( V V ) ( + λv ) V V V V V 2L DS I μc V V V V V V V V D OX GS T DS GS T DS GS T OX GS T DS GS T DS GS T Cutoff Triode Saturation Guess Saturation: W I = μc V V 2L ( ) 2 D OX GS T V V V > V V GS T DS GS T
5 Quiz 3 (solution) Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= Guess Saturation: W I = μc ( V V ) 2 D OX GS T 2L V V V > V V GS T DS GS T u I = 2 D 2 2u I D ( ) 4 2 = 25. ma 2V V 7V > 2V V
6 Review from Last Time: nchannel MOSFET Operation and Model V DS V GS I D V BS I B I G (V BS small) Saturation region of operation Inversion layer disappears near drain Saturation first occurs when V DS =V GS V T I D =? I G = I B =
7 Review from Last Time: Transistor Size Comparison with 24AWG Copper Cable (Drawn to scale) State of Art transistor dimensions about 2 times smaller (lateral) than μ fiber The gates of about 4 transistors can be placed on the crosssection of this fiber (maybe only 4 transistors)
8 Review from Last Time: MOS Transistors I= G Standard squarelaw model V <V GS T μ C W V L 2 2L n OX DS I= V V V V V V V V D GS T DS GS T DS GS T μ C W 2 n OX ( V ) ( ) GS V T +λv DS V GS V T V DS > V GS V T μ C n OX λ. V T W/L V 4 A V.5V to 3V varies by design 2
9 Review from Last Time: MOS Transistors pchannel MOSFET I= G Standard squarelaw model V <V GS T μ C W V L 2 2L p OX DS I= V V V V V V V V D GS T DS GS T DS GS T μ C W 2 p OX ( V ) ( ) GS V T +λv DS V GS V T V DS < V GS V T V T < I D V DS
10 Review from Last Time: MOS Transistor Models simplifications I= G I= V <V D GS T V = V V DS GS T Equivalent Circuit Models D D D S S G GS T GS T S
11 Review from Last Time: MOS Transistor Models simplifications V DS I= G I= V > V D GS T V = V V DS GS T I D Equivalent Circuit Models
12 Review from Last Time: MOS Transistor Models simplifications I= G V <V GS T I= D V DS V V GS T RFET R FET L V V μc W GS T OX Better Switchlevel dc model good enough for predicting basic operation of many digital circuits and can be used to predict speed performance if parasitic capacitances are added
13 Review from Last Time: MOS Transistor Models Voltage Variable Resistor (VVR) operation D V CONT FET S R FET L V V μc W GS T OX Analog application of MOSFET in triode region
14 Review from Last Time: Voltage Variable Resistor R 2 A =+ V R R2 A=+ V R Applications include Automatic Gain Control (AGC) R FET FET L V V μc W GS T OX
15 MOS Transistor Models simplifications I D V GS6 V GS5 V GS4 V GS3 V GS2 I= G μc W 2L 2 ( ) ( ) OX I= V V +λv D GS T DS Can often assume λ= Saturation V GS V DS Saturation Region Model used for many analog applications
16 MOS Transistor Models simplifications I= G μc W 2 ( ) 2L Saturation OX I= V V D GS T With λ= Saturation Region Model good enough for many analog applications
17 MOS Transistor Models simplifications μc W OX V GS V T +λv DS 2L 2 ( ) ( ) Saturation Region Model good enough for many analog applications
18 MOS Transistor Models (Summary)
19 MOS Transistor Models (Summary) μc W OX V V +λv 2L ( 2 ) ( ) GS T DS D V CONT FET S
20 MOS Transistor Applications (Digital Circuits) Assume ~ V H = V DD > V T Assume ~ V L = V < V T MOSFET Model I= G I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5
21 MOS Transistor Applications (Digital Circuits) R V DD Assume ~ V H = V DD > V T Assume ~ V L = V < V T X M I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ X= V DD, V DS = V so = V ~ If ~ X= V, I D = A so =V DD I D R = V DD ~ So this circuit performs as a Boolean inverter Assume ~ V L < V T Assume ~ V H > V T X Truth Table
22 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A B 2 MOSFET Model I= G I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5
23 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A B 2 I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so = V ~ If ~ A= V DD, ~ B= V V, DS = V (and I D2 =A) so = V ~ If ~ A= V, ~ B= V DD, V DS2 = V (and I D =A) so = V ~ If ~ A= V, ~ B= V, I D2 = A and I D =A so I R =A, thus = V DD = I R R=V DD ~
24 A B MOS Transistor Applications (Digital Circuits) R V DD 2 A B Truth Table If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so = V ~ If ~ A= V DD, ~ B= V, V DS = V (and I D2 =A) so = V ~ If ~ A= V, ~ B= V DD, V DS2 = V (and I D =A) so = V ~ If ~ A= V, ~ B= V, I D2 = A and I D =A so I R =A, thus = V DD = I R R=V DD ~ 2input NOR Gate
25 MOS Transistor Applications (Digital Circuits) V DD R Assume ~ V H = V DD > V T Assume ~ V L = V < V T A M B M 2 I= V <V D GS T V = V V DS GS T Assume V T ~V DD /5 If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so =V ~ If ~ A= V DD, If ~ A= V, If ~ A= V, ~ B= V V, DS = V and I D2 =A so I R =A thus =V DD I R R= V DD ~ ~ B= V V DD, DS2 = V and I D =A so I R =A thus =V DD I R R= V DD ~ ~ B= V, I D = A and I D2 =A so I R =A thus =V DD I R R= V DD ~
26 V DD R A M B M 2 MOS Transistor Applications (Digital Circuits) A B Truth Table If ~ A= V DD, ~ B= V V DD, DS =V DS2 = V so =V ~ If ~ A= V DD, If ~ A= V, If ~ A= V, ~ B= V V, DS = V and I D2 =A so I R =A thus =V DD I R R= V DD ~ ~ B= V V DD, DS2 = V and I D =A so I R =A thus =V DD I R R= V DD ~ ~ B= V I, D = A and I D2 =A so I R =A thus =V DD I R R= V DD ~ 2input NAND Gate
27 MOS Transistor Applications (Digital Circuits) V DD V DD R R A M A B 2 B M 2 A B A B Can be extended to arbitrary number of inputs But the resistor is not practically available in most processes and static power dissipation is too high
28 MOS Transistor Applications (Digital Circuits) DD X 2 Assume ~ V H = V DD Assume ~ V L = V MOSFET Models
29 MOS Transistor Applications (Digital Circuits) DD 2 Assume ~ V H = V DD X Assume ~ V L = V MOSFET Models Assume V T ~V DD /5 nchannel device Assume V T2 ~  V DD /5 pchannel device
30 MOS Transistor Applications (Digital Circuits) DD DD 2 2 X X ~ V H = V DD ~ V L = V If X=V DD, then V GS =V DD >V T, V GS2 = > V T2 S closed, S 2 open = V~
31 MOS Transistor Applications (Digital Circuits) DD DD 2 2 X X ~ V H = V DD ~ V L = V If X=V, then V GS =V<V T, V GS2 =V DD < V T2 S 2 closed, S open = V DD ~
32 MOS Transistor Applications (Digital Circuits) DD X X 2 Truth Table Performs as a digital inverter
33 MOS Transistor Applications (Digital Circuits) DD A 4 3 A B B 2 Truth Table Performs as a 2input NOR Gate Can be easily extended to an ninput NOR Gate
34 MOS Transistor Applications (Digital Circuits) DD A B Truth Table Performs as a 2input NAND Gate Can be easily extended to an ninput NAND Gate A B
35 MOS Transistor Applications (Digital Circuits) DD DD X M 2 A M 3 M 4 M M B M 2 Termed CMOS Logic Widely used in industry today (millions of transistors in many ICs using this logic Almost never used as discrete devices
36 Bipolar Transistor B: Base C: Collector E: Emitter
37 Bipolar Transistor npn pnp
38 Bipolar Transistor npn pnp ptype silicon ntype silicon
39 Vertical npn BJT Base Emitter Collector n+ buried collector implant Buried collector Vertical npn BJT
40 Lateral pnp BJT BE E C CB Lateral pnp BJT
41 Bipolar Transistor I C I B5 npn I B4 I B3 I B2 I B V CE
42 Bipolar Transistor C I C B I B V CE V BE E pnp
43 Bipolar Transistor C B E C npn CE
44 Bipolar Transistor C npn CE Most analog or linear applications based upon Forward Active region Most digital applications involve Saturation and Cutoff regions and switching between these regions as the Boolean value changes states
45 Bipolar and MOS Region Comparisons I C Saturation Forward Active V CE MOSFET BJT Cutoff Cutoff Saturation Triode Cutoff Forward Active Saturation
46 Bipolar Transistor I C I B5 I B4 I B3 I B2 I B V CE npn
47 Bipolar Transistor MultiRegion Model I βi V + = CE C B VAF JSA I B = β E e V BE V t V BE >.4V V BC < Forward Active V t = kt q V BE =.7V V CE =.2V I C <βi B Saturation I C =I B = V BE < V BC < Cutoff
48 Bipolar Transistor I C I B5 I B4 I B3 I B2 I B V CE npn C CE
49 Bipolar Transistor I C = βi JSA I B = β V t = kt q B E e V BE V t Simplifier Basic MultiRegion Model V BE >.4V V BC < Forward Active V BE =.7V V CE =.2V I C <βi B Saturation I C =I B = V BE < V BC < Cutoff
50 End of Lecture 3
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