Class AB Output Stage

Size: px
Start display at page:

Download "Class AB Output Stage"

Transcription

1 Class AB Output Stage Class AB amplifier Operation Multisim Simulation - VTC Class AB amplifier biasing Widlar current source Multisim Simulation - Biasing 1

2 Class AB Operation v I V B (set by V B )

3 Basic Class AB Amplifier Operation 1. Bias Q N and Q P into slight conduction (fwd. act.) when v I = 0: i N = i P. i L =i N i P Ideally Q N and Q P are: a. Matched (unlikely with discrete transistors and challenging in IC). b. Operate at same ambient temperature. 3.For v i > 0: i N > i P i.e. Q N most cond. (like Class B). 4.For v i < 0: i P > i N i.e. Q P most cond. (like Class B). NOTE. This is base-voltage biasing with all its stability problems! 3

4 Class AB VTC Plot Ideally the two DC base voltage sources are matched and / / 0.7V = V. Ideally, zero cross-over distortion 4

5 Amplitude: 0 V p Frequency: 1 khz Class AB VTC Simulation V CC Looks like Class A VTC / R Sig / R L -V CC 5

6 Class AB VTC Simulation - cont. Amplitude: V p Frequency: 1 khz Cross-over distortion =0.1V =0.5V =0.7V 6

7 Class AB Amplifier Operation - cont. for v i 0 v i + v BEN = v i v O v EBP =v O v i Output voltage for v i 0: for v i 0 v o =v i v BEN v o v i for v i 0 v o =v i v EBP v o v i i N =i P i L Base-to base voltage is constant! Bias (Q N & Q P matched): I N =I P = = e V T v BEN v EBP = Let us next show that i N i P = for all v i for all v i 7

8 i N = e ESE319 Introduction to Microelectronics Class AB Amplifier Operation - cont. for v i 0 v o =v i v BEN v BEN =v i v o for v i 0 v o =v i v EBP v EBP =v o v i Using the currents v BEN V T v BEN =V T ln i N v BEN v EBP = V T ln i N for all v i ADD Note for Class B = 0 v EBP V i P = e T v EBP =V T ln i P I S V I N =I P = = e T =V T ln I Q V T ln i P I =V T S ln I Q I for all v S i 8

9 Class AB Amplifier Operation - cont. i N =i P i L from the previous slide V T ln i N I V T S ln i P I =V T S ln I Q V T ln i N i P =V T ln ln i N i P ln =ln ln ln i N i P =ln or i N i P = Constant base voltage condition: v BEN v EBP = => i N i P = 9

10 Class AB Amplifier Operation VTC cont. The constant base voltage condition i P i N = For example let = 1 µa and i N = 10 ma. i P = I Q = =0.1 ma= 3 i N i N where is typically small. The Class AB circuit, over most of its input signal range, operates as if either the Q N or Q P transistor is conducting and the Q P or Q N transistor is cut off. For small values of v I both Q N and Q P conduct, and as v I is increased or decreased, the conduction of Q N or Q P dominates, respectively. Using this approximation we see that a class AB amplifier acts much like a class B amplifier; but with a much reduced dead zone. 10

11 Class AB Power Conversion Efficiency & Power Dissipation Similar to Class B P Disp P Disp(max) = 0.9 W Let V CC = 1 V and R L =100 P Disp max = V CC =0.9 W R L P Disp B = V o peak R L V CC 1 V o peak R L 0.0 W 0.7 V Accurate for small V o-peak. = 7.63 V V o peak P Disp 0 when V o-peak = 0 11

12 D1 D ESE319 Introduction to Microelectronics Class AB Amplifier Biasing current mirror + - QN QP =V CC R R V CC A straightforward biasing approach: D1 and D are diode-connected transistors identical to QN and QP, respectively. They form mirrors with the quiescent currents set by matched R's: = V CC 1.4 R R= V CC 0.7 = V CC 0.7 R Recall: With mirrors, the ambient temperature for all transistors needs to be matched! or: 1

13 V CC I REF R V BE1 ESE319 Introduction to Microelectronics Widlar Current Source I N = bias current for Class AB amplifier NPN V BE R e = I N Q = QN emitter degeneration V BE1 =V T ln I REF V BE =V T ln I Q V BE1 =V BE R e V BE1 V BE = R e I REF = V CC V BE1 R = 1V 0.7V 11.3 k =1mA Note: Pages in Sedra & Smith Text. V BE1 V BE =V T ln I REF =V I T ln I REF Q R e =V BE1 V BE =V T ln I REF Note R e 0 iff I REF 13

14 V CC R I REF ESE319 Introduction to Microelectronics Widlar Current Source - cont. R e =V T ln I REF R= V CC V BE1 I REF R e If specified and I REF chosen by designer: R e = V T ln I REF Example Let = 10 µa & choose I REF = 10 ma, determine R and R e : R= V CC V BE1 I REF = 1 V 0.7V 10 ma R e = V T ln I REF I = 0.05V Q 10 A.=500 ln1000=17.7 k R=1.13 k =1.13 k ln 10 m A 10 A R e =17.7 k 14

15 Widlar Current Mirror Small-Signal Analysis.. R e R R e e R out r 1/ g m i x =g m v i ro =g m v v x v r o v = r R e i x i x = g m r R e i x v x r o r R e i x r o. g m r R e i x v x r o R out is greatly enhanced by adding emitter degeneration. R out = v x i x r o [ g m R e r ] g m R e r 1 15

16 Class AB Current Biasing Simulation Bias currents set at I REF and by R and emitter resistor(s) R e. I REF 4 ma =N =P ma NPN Widlar current mirror 6.31mA R=.8 kω I REF N Q1 i N Q R e =10 Ω R L =100 Ω i L =i N i P Amplitude: 0 V p Frequency: 1 khz R=.8 kω Q3 Q4 I REF P ii i L R e =10 Ω.3mA -39µA R= V V CC BE1 = V V CC EB3.8 k I REF I REF R e = V T N ln I REF I 9 QN PNP Widlar current mirror 16

17 Conclusions ADVANTAGE: Class AB operation improves on Class B linearity. Power conversion efficiency similar to Class B DISADVANTAGES: 1. Emitter resistors absorb output power.. Power dissipation for low signal levels higher than Class B. 3. Temperature matching will be needed more so. if emitter degeneration resistors are not used. 17

ESE319 Introduction to Microelectronics. Output Stages

ESE319 Introduction to Microelectronics. Output Stages Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

More information

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

ESE319 Introduction to Microelectronics. BJT Biasing Cont. BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple

More information

University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS

University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits. Final Exam 10Dec08 SOLUTIONS University of Pennsylvania Department of Electrical and Systems Engineering ESE 319 Microelectronic Circuits Final Exam 10Dec08 SOLUTIONS This exam is a closed book exam. Students are allowed to use a

More information

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1 Quick Review If R C1 = R C2 and Q1 = Q2, what is the value of V O-dm? Let Q1 = Q2 and R C1 R C2 s.t. R C1 > R C2, express R C1 & R C2 in terms R C and ΔR C. If V O-dm is the differential output offset

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example Small-Signal BJT Models Small-Signal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R

More information

BJT Biasing Cont. & Small Signal Model

BJT Biasing Cont. & Small Signal Model BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply

More information

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier Common Emitter BJT Amplifier 1 Adding a signal source to the single power supply bias amplifier R C R 1 R C V CC V CC V B R E R 2 R E Desired effect addition of bias and signal sources Starting point -

More information

FYSE400 ANALOG ELECTRONICS

FYSE400 ANALOG ELECTRONICS YSE400 ANALOG ELECTONCS LECTUE 3 Bipolar Sub Circuits 1 BPOLA SUB CCUTS Bipolar Current Sinks and -Sources Transistor operates in forwardactive region. < < sat CE CN max CE < < + BN CN BN max CE N N N

More information

Chapter 3 Output stages

Chapter 3 Output stages Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum

More information

figure shows a pnp transistor biased to operate in the active mode

figure shows a pnp transistor biased to operate in the active mode Lecture 10b EE-215 Electronic Devices and Circuits Asst Prof Muhammad Anis Chaudhary BJT: Device Structure and Physical Operation The pnp Transistor figure shows a pnp transistor biased to operate in the

More information

EE 321 Analog Electronics, Fall 2013 Homework #8 solution

EE 321 Analog Electronics, Fall 2013 Homework #8 solution EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various

More information

Circle the one best answer for each question. Five points per question.

Circle the one best answer for each question. Five points per question. ID # NAME EE-255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions

More information

Tutorial #4: Bias Point Analysis in Multisim

Tutorial #4: Bias Point Analysis in Multisim SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #4: Bias Point Analysis in Multisim INTRODUCTION When BJTs

More information

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

Bipolar Junction Transistor (BJT) - Introduction

Bipolar Junction Transistor (BJT) - Introduction Bipolar Junction Transistor (BJT) - Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification

More information

Dr JBO Student ID Number: Model Answer Section: 01A / 01B Lecturer: Dr. Jamaludin Bin Omar. Name:

Dr JBO Student ID Number: Model Answer Section: 01A / 01B Lecturer: Dr. Jamaludin Bin Omar. Name: EEEB273 - Quiz 5 [Question Set 1] Section: 01A / 01B For the class AB output stage in, given that V CC = 12 V and V BB = 1.44 V. R L = 1 k. The reverse-bias saturation current for the transistors, I S

More information

The current source. The Active Current Source

The current source. The Active Current Source V ref + - The current source Minimum noise euals: Thevenin Norton = V ref DC current through resistor gives an increase of /f noise (granular structure) Accuracy of source also determined by the accuracy

More information

Fig. 1 Simple BJT (NPN) current mirror and its test circuit

Fig. 1 Simple BJT (NPN) current mirror and its test circuit 1 Lab 01: Current Mirrors Total 30 points: 20 points for lab, 5 points for well-organized report, 5 points for immaculate circuit on breadboard Note: There are two parts for this lab. You must answer the

More information

Transistor amplifiers: Biasing and Small Signal Model

Transistor amplifiers: Biasing and Small Signal Model Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT

More information

Input Stage. V IC(max) V BE1. V CE 5(sat ) V IC(min) = V CC +V BE 3 = V EE. + V CE1(sat )

Input Stage. V IC(max) V BE1. V CE 5(sat ) V IC(min) = V CC +V BE 3 = V EE. + V CE1(sat ) BJT OPAMPs Input Stage The input stage is similar to MOS design. Take a pnp input stage (Q1- Q2) with npn current mirror load (Q3- Q4) and a pnp tail current source (Q5). Then, V IC(max) = V CC V BE1 V

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount

More information

Mod. Sim. Dyn. Sys. Amplifiers page 1

Mod. Sim. Dyn. Sys. Amplifiers page 1 AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Figure 1 Basic epitaxial planar structure of NPN Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors Lecture Notes: 2304154 Physics and Electronics Lecture 6 (2 nd Half), Year: 2007

More information

6.301 Solid-State Circuits Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Prof. Joel L.

6.301 Solid-State Circuits Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Prof. Joel L. Recitation 22: More on Transimpedance Amplifiers, and Intro to Zener Diode References Before we leave the topic of transimpedance amplifiers completely, there is one biasing mystery that is worth clearing

More information

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130

CARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130 ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED

More information

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)

ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed) ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free

More information

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers 6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,

More information

SPICE SIMULATIONS OF CURRENT SOURCES BIASING OF LOW VOLTAGE

SPICE SIMULATIONS OF CURRENT SOURCES BIASING OF LOW VOLTAGE SPICE SIMULATIONS OF CURRENT SOURCES BIASING OF LOW VOLTAGE MONICA-ANCA CHITA, MIHAI IONESCU Key words: Bias circuits, Current mirrors, Current sources biasing of low voltage, SPICE simulations. In this

More information

EE105 Fall 2014 Microelectronic Devices and Circuits

EE105 Fall 2014 Microelectronic Devices and Circuits EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)

More information

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59

DC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15-Mar / 59 Contents Three States of Operation BJT DC Analysis Fixed-Bias Circuit Emitter-Stabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors

More information

55:041 Electronic Circuits The University of Iowa Fall Final Exam

55:041 Electronic Circuits The University of Iowa Fall Final Exam Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a class-b amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered

More information

Introduction to Transistors. Semiconductors Diodes Transistors

Introduction to Transistors. Semiconductors Diodes Transistors Introduction to Transistors Semiconductors Diodes Transistors 1 Semiconductors Typical semiconductors, like silicon and germanium, have four valence electrons which form atomic bonds with neighboring atoms

More information

RIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIB-R T7. Detailed Explanations. Rank Improvement Batch ANSWERS.

RIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIB-R T7. Detailed Explanations. Rank Improvement Batch ANSWERS. 8 Electrical Engineering RIB-R T7 Session 08-9 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)

More information

Transistor Characteristics and A simple BJT Current Mirror

Transistor Characteristics and A simple BJT Current Mirror Transistor Characteristics and A simple BJT Current Mirror Current-oltage (I-) Characteristics Device Under Test DUT i v T T 1 R X R X T for test Independent variable on horizontal axis Could force current

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3 ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o

More information

Chapter 2 - DC Biasing - BJTs

Chapter 2 - DC Biasing - BJTs Objectives Chapter 2 - DC Biasing - BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

The Common-Emitter Amplifier

The Common-Emitter Amplifier c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering. The Common-Emitter Amplifier Basic Circuit Fig. shows the circuit diagram

More information

Chapter 9 Bipolar Junction Transistor

Chapter 9 Bipolar Junction Transistor hapter 9 ipolar Junction Transistor hapter 9 - JT ipolar Junction Transistor JT haracteristics NPN, PNP JT D iasing ollector haracteristic and Load Line ipolar Junction Transistor (JT) JT is a three-terminal

More information

Homework Assignment 09

Homework Assignment 09 Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

4.5 (A4.3) - TEMPERATURE INDEPENDENT BIASING (BANDGAP)

4.5 (A4.3) - TEMPERATURE INDEPENDENT BIASING (BANDGAP) emp. Indep. Biasing (7/14/00) Page 1 4.5 (A4.3) - EMPERAURE INDEPENDEN BIASING (BANDGAP) INRODUCION Objective he objective of this presentation is: 1.) Introduce the concept of a bandgap reference 2.)

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,

More information

(e V BC/V T. α F I SE = α R I SC = I S (3)

(e V BC/V T. α F I SE = α R I SC = I S (3) Experiment #8 BJT witching Characteristics Introduction pring 2015 Be sure to print a copy of Experiment #8 and bring it with you to lab. There will not be any experiment copies available in the lab. Also

More information

V = = A = ln V

V = = A = ln V Chapter Problem Solutions. a. b. c. γ + γ + BE + C + + γ + ( γ ( γ C γ + BE + BE γ BE and C γ ( γ + or C BE + C ma.5 kω.7 ( ma + 4. kω.5 kω C. (a ln C BE T S (i μ 6 A,.6 ln.588 μa C BE 4 (ii μ 6 A,.6 ln.5987

More information

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION ECE-343 Test : Feb 0, 00 6:00-8:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z

More information

CHAPTER.4: Transistor at low frequencies

CHAPTER.4: Transistor at low frequencies CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

assess the biasing requirements for transistor amplifiers

assess the biasing requirements for transistor amplifiers 1 INTODUTION In this lesson we examine the properties of the bipolar junction transistor (JT) amd its typical practical characteristics. We then go on to devise circuits in which we can take best advantage

More information

AN6783S. IC for long interval timer. ICs for Timer. Overview. Features. Applications. Block Diagram

AN6783S. IC for long interval timer. ICs for Timer. Overview. Features. Applications. Block Diagram IC for long interval timer Overview The is an IC designed for a long interval timer. It is oscillated by using the external resistor and capacitor, and the oscillation frequency divided by a - stage F.F.

More information

Junction Bipolar Transistor. Characteristics Models Datasheet

Junction Bipolar Transistor. Characteristics Models Datasheet Junction Bipolar Transistor Characteristics Models Datasheet Characteristics (1) The BJT is a threeterminal device, terminals are named emitter, base and collector. Small signals, applied to the base,

More information

Microelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises

Microelectronic Circuit Design Fourth Edition - Part I Solutions to Exercises Page Microelectronic Circuit esign Fourth Edition - Part I Solutions to Exercises CHAPTER V LSB 5.V 0 bits 5.V 04bits 5.00 mv V 5.V MSB.560V 000000 9 + 8 + 4 + 0 785 0 V O 785 5.00mV or ) 5.V 3.95 V V

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER: UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency

More information

L4970A 10A SWITCHING REGULATOR

L4970A 10A SWITCHING REGULATOR L4970A 10A SWITCHING REGULATOR 10A OUTPUT CURRENT.1 TO 40 OUTPUT OLTAGE RANGE 0 TO 90 DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA- TION INTERNAL CURRENT LIMITING PRECISE.1 ± 2 ON CHIP REFERENCE

More information

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices

Electronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

Chapter 10 Instructor Notes

Chapter 10 Instructor Notes G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #8 Lab Report The Bipolar Junction Transistor: Characteristics and Models Submission Date: 11/6/2017 Instructors: Dr. Minhee Yun John Erickson Yanhao Du Submitted By:

More information

VI. Transistor amplifiers: Biasing and Small Signal Model

VI. Transistor amplifiers: Biasing and Small Signal Model VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

Fig. 1-1 Current Flow in a Resistive load

Fig. 1-1 Current Flow in a Resistive load 1 Electric Circuits: Current flow in a resistive load flows either from (-) to () which is labeled below as Electron flow or the Conventional flow from () to (-). We will use conventional flow in this

More information

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may

More information

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER

Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Lecture 24 Multistage Amplifiers (I) MULTISTAGE AMPLIFIER Outline. Introduction 2. CMOS multi-stage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier

More information

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Bipolar Junction Transistors. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Bipolar Junction Transistors Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of Precedent Class Explain the Operation of the Zener Diode Explain Applications

More information

A NONLINEAR DIGITAL MODEL OF THE EMS VCS3 VOLTAGE CONTROLLED FILTER

A NONLINEAR DIGITAL MODEL OF THE EMS VCS3 VOLTAGE CONTROLLED FILTER A NONLINEAR DIGITAL MODEL OF THE EMS VCS3 VOLTAGE CONTROLLED FILTER Marco Civolani University of Verona Dipartimento di Informatica 15 Strada Le Grazie Verona 37134, Italy marcocivolani@gmailcom Federico

More information

Forward-Active Terminal Currents

Forward-Active Terminal Currents Forward-Active Terminal Currents Collector current: (electron diffusion current density) x (emitter area) diff J n AE qd n n po A E V E V th ------------------------------ e W (why minus sign? is by def.

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D)

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D) Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output

More information

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION 4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration

More information

AN8814SB. 4-channel driver IC for optical disk drive. ICs for Compact Disc/CD-ROM Player. Overview. Features. Applications.

AN8814SB. 4-channel driver IC for optical disk drive. ICs for Compact Disc/CD-ROM Player. Overview. Features. Applications. AN884SB 4-channel driver IC for optical disk drive Overview The AN884SB is a BTL system 4-channel driver and is encapsulated in the SMD package which excels in heat radiation characteristic. 8.4±0. (5.5)

More information

Chapter 2. - DC Biasing - BJTs

Chapter 2. - DC Biasing - BJTs Chapter 2. - DC Biasing - BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented

More information

Microelectronic Devices and Circuits Lecture 13 - Linear Equivalent Circuits - Outline Announcements Exam Two -

Microelectronic Devices and Circuits Lecture 13 - Linear Equivalent Circuits - Outline Announcements Exam Two - 6.012 Microelectronic Devices and Circuits Lecture 13 Linear Equivalent Circuits Outline Announcements Exam Two Coming next week, Nov. 5, 7:309:30 p.m. Review Subthreshold operation of MOSFETs Review Large

More information

Electronics II. Midterm #2

Electronics II. Midterm #2 The University of Toledo EECS:3400 Electronics I Section sums_elct7.fm - StudentName Electronics II Midterm # Problems Points. 8. 3. 7 Total 0 Was the exam fair? yes no The University of Toledo sums_elct7.fm

More information

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208   Department of EECE lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo su7ms_elct7.fm - Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm - Problem 7 points Equation (-)

More information

CHAPTER 13. Solutions for Exercises

CHAPTER 13. Solutions for Exercises HPT 3 Solutions for xercises 3. The emitter current is gien by the Shockley equation: i S exp VT For operation with i, we hae exp >> S >>, and we can write VT i S exp VT Soling for, we hae 3.2 i 2 0 26ln

More information

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013. Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the op-amp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at

More information

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14 Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: -1.35 x 10 6 cm/s Page 58, last exercise,

More information

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C) TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications

More information

The Wien Bridge Oscillator Family

The Wien Bridge Oscillator Family Downloaded from orbit.dtu.dk on: Dec 29, 207 The Wien Bridge Oscillator Family Lindberg, Erik Published in: Proceedings of the ICSES-06 Publication date: 2006 Link back to DTU Orbit Citation APA): Lindberg,

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The in-band Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( In-band implies the

More information

Electronics II. Final Examination

Electronics II. Final Examination The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11

More information

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with

More information

Half-circuit incremental analysis techniques

Half-circuit incremental analysis techniques 6.012 Electronic Devices and Circuits Lecture 19 Differential Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Design Problem out tomorrow in recitation Review Singletransistor

More information

Analog Circuit Design Discrete & Integrated

Analog Circuit Design Discrete & Integrated This document contains the Errata for the textbook Analog Circuit Design Discrete & Integrated The Hardcover Edition (shown below at the left and published by McGraw-Hill Education) was preceded by a Spiral-Bound

More information

Advanced Current Mirrors and Opamps

Advanced Current Mirrors and Opamps Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in

More information

CHAPTER 7 - CD COMPANION

CHAPTER 7 - CD COMPANION Chapter 7 - CD companion 1 CHAPTER 7 - CD COMPANION CD-7.2 Biasing of Single-Stage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and field-effect

More information

Experiment Determining the beta where it is stable.(6) Analysis and design of dc-biased transistor configurations (9)

Experiment Determining the beta where it is stable.(6) Analysis and design of dc-biased transistor configurations (9) Visit http://electronicsclub.cjb.net for more resources DC BIASING BJTs (Analysis & Design) Design Procedure..(3) Limits of operation....(3) BJT modes of operation...(4) The Beta(h FE ).....(5) Experiment

More information

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities:

Whereas the diode was a 1-junction device, the transistor contains two junctions. This leads to two possibilities: Part Recall: two types of charge carriers in semiconductors: electrons & holes two types of doped semiconductors: n-type (favor e-), p-type (favor holes) for conduction Whereas the diode was a -junction

More information

EE105 - Fall 2006 Microelectronic Devices and Circuits

EE105 - Fall 2006 Microelectronic Devices and Circuits EE105 - Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 21: Bipolar Junction Transistor Administrative Midterm Th 6:30-8pm in Sibley Auditorium Covering everything

More information

Bipolar junction transistor operation and modeling

Bipolar junction transistor operation and modeling 6.01 - Electronic Devices and Circuits Lecture 8 - Bipolar Junction Transistor Basics - Outline Announcements Handout - Lecture Outline and Summary; Old eam 1's on Stellar First Hour Eam - Oct. 8, 7:30-9:30

More information

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.

More information