Homework Assignment #5 EE 477 Spring 2017 Professor Parker
|
|
- Bridget Bates
- 6 years ago
- Views:
Transcription
1 Homework Assignment #5 EE 477 Spring 2017 Professor Parker Question 1: (15%) Compute the worst-case rising and falling RC time constants at point B of the circuit below using the Elmore delay method. Assume all transistors are unit sized and wire capacitance is lumped. Assume Rchn = 2000 ohms. Cg(n+p) = 20 ff, Cd(n+p) = 20ff, and Cint = 10 ff. Rint for interconnect1 is 10 ohms, interconnect2 is 5 ohms, and interconnect3 is 7 ohms. Recall that channel resistance is inversely proportional to beta. So: R "#$ = β % R "#% β $ Since all transistors are unit sized, W/L is same. => R "#$ = = 8604 Ω 51 Note that interconnect capacitance is lumped at the beginning, so we don t need to consider it separately for the 3 wires. Following is the circuit for falling delay at B: Falling Elmore delay at B = = ns For rising delay at B, the circuit is the same except that Rchn is replaced with Rchp and the leftmost Gnd symbol is replaced with Vdd. Rising Elmore delay at B = = ns
2 Question 2: a) (15%) Is CBADEFGHIBACAGD an Euler path for the PMOS transistors shown in the circuit below. If so, mark it. If not, mark where it fails. No, it fails as shown. Note: If we start from the other C PMOS transistor, it fails immediately because there is no B connected to C. b) (5%) What information does an Euler path tell you about transistor placement when laying out a compound gate? Transistors should be laid out from left-to-right in the order of the Euler path. This allows maximum possible sharing of diffusion regions.
3 c) (10%) Circle all the diffusion capacitance locations that could contribute to fall time, even if some do not when the longest path is on for discharge. To get worst case discharging path, we must have B = 1, C = 1, A = 0, G = 0. The other inputs are flexible. For example, any 1 NMOS out of D, E, F should be on, any 1 NMOS out of H, I should be on, etc. So, all the diffusion capacitances could possibly contribute to fall time: Note: As an exercise, try to compute the input combinations for A to I which give the worst case fall time.
4 Question 3: (10%) Assume you have the following wires to place in a layout. The numbers give starting and ending x positions of the wires. Place them using the Left Edge algorithm. Two wires in the same track can start and end at the same point. So a wire can end at 4 and another can start at 4. 3,7 4,6 1,5 2,4 5,7 3,8 1,6 6,8 Track 1: 1,6 6,8 Track 2: 1,5 5,7 Track 3: 2,4 4,6 Track 4: 3,8 Track 5: 3,7 Question 4: (8%) Compute the gate capacitance for an NMOS transistor in linear and saturation region. The NMOS transistor dimensions are: W=9 lambda, L= 3 lambda. Assume L D =0.0 nm Since lambda = 100 nm, we get W = 900 nm, L = 300 nm. C? = ε ABWL t AB = GHI GJ GJ GH? = 1.63 ff Note: In this case, t ox is thickness of thin oxide because that is the material under the gate. Also, SI units have been used everywhere in the above equation, that s why the power of 10 in ε? is -12, not -14. In linear region, C NOPQ = C? = ff. In saturation, C NOPQ = 2 3 C? = ff. Question 5: (8%) Use the fringing field figure on p. 274 of the text. Assume w/l = 0.2, and w/h = 0.5. Estimate the fringing field factor if t/h = 1. As shown by the maroon lines in the figure below, fringing field factor is 10. Note: For meanings of the terms w, l, h, t, please refer to the textbook or watch the discussion on Apr 7 th.
5
6 Question 6: (8%) Assume electrons in a wire on a CMOS chip move at v m/sec and the rise/fall time on the wire is 0.01ns. Assuming wire length is 1 cm, what electron velocity would require us to consider inductance? Inductance should be considered when: τ XYZQ, τ \O]] < 2.5l v 2.5l => v < τ XYZQ, τ \O]] => v < GJ => v < J m/s Note: Speed of light is 3 10 d m/s, so we should definitely consider inductance here! Question 7: (8%) Ernie Engineer decides to separate the first and second latches of a negative edge-triggered flip flop by a long wire so he can fit the flip flop into little spaces in a complicated layout. Now he finds he needs to increase his clock period. Explain what timing of the flip flop is affected by the long wire? t hold is the hold time, t setup is the setup time, t q is the clock-to-q time, t L2prop is the propagation delay in the feedback path of the second latch, and t comb is the propagation delay of the feedback combinational logic.
7 If a long wire is placed between the latches, t setup increases, and so clock period also increases. This is because clock period = t setup + t q + max(t comb,t L2prop ). The way to get a better feel for this is to look at the inverter in the first latch with output NOTQ. That inverter sees not only the inverter in the feedback path to the first mux, but sees the C int and R int. The Elmore delay to the input of the second latch includes C int and R int. So the delay to the feedback inverter in the first latch is increased, increasing setup time. Question 8: (8%) Compute the C dp for the source diffusion sidewall that faces the channel of a unit size PMOS transistor. Use diffusion capacitances given above: C jbsp = 18.8 x 10-4 pf/ μm 2 and C jbswp = 3.17 x 10-4 pf/ μm. The sidewall facing the channel has capacitance per unit area, so we need to compute area of the sidewall. Since width of diffusion is not explicitly specified, assume it s equal to the width of the channel, i.e. 0.4 μm. Depth of diffusion is given as x j. C e$ = C fgz$ W x f = Gi = ff Question 9: (5%) Calculate the resistance of a wire.03 cm long and 6 lambda wide that has resistance.4 ohms/square. Wire Length = 0.03 cm = 3000λ. Square size can be anything as long as the entire wire surface can be filled with an integral number of squares. Let s take square side = 6λ. Total resistance = = 200 Ω Note: If you instead took squares of side 3λ, there would be 1000 squares along the length and 2 along the width. So total resistance would still be = = = 200 Ω.
CARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING DIGITAL INTEGRATED CIRCUITS FALL 2002
CARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 18-322 DIGITAL INTEGRATED CIRCUITS FALL 2002 Final Examination, Monday Dec. 16, 2002 NAME: SECTION: Time: 180 minutes Closed
More informationHomework Assignment #3 EE 477 Spring 2017 Professor Parker , -.. = 1.8 -, 345 = 0 -
Homework Assignment #3 EE 477 Spring 2017 Professor Parker Note:! " = $ " % &' ( ) * ),! + = $ + % &' (, *,, -.. = 1.8 -, 345 = 0 - Question 1: a) (8%) Define the terms V OHmin, V IHmin, V ILmax and V
More informationEE115C Digital Electronic Circuits Homework #6
Problem 1 Sizing of adder blocks Electrical Engineering Department Spring 2010 EE115C Digital Electronic Circuits Homework #6 Solution Figure 1: Mirror adder. Study the mirror adder cell (textbook, pages
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)
1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationEECS 312: Digital Integrated Circuits Final Exam Solutions 23 April 2009
Signature: EECS 312: Digital Integrated Circuits Final Exam Solutions 23 April 2009 Robert Dick Show your work. Derivations are required for credit; end results are insufficient. Closed book. You may use
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationEE115C Digital Electronic Circuits Homework #5
EE115C Digital Electronic Circuits Homework #5 Due Thursday, May 13, 6pm @ 56-147E EIV Problem 1 Elmore Delay Analysis Calculate the Elmore delay from node A to node B using the values for the resistors
More informationEE371 - Advanced VLSI Circuit Design
EE371 - Advanced VLSI Circuit Design Midterm Examination May 7, 2002 Name: No. Points Score 1. 18 2. 22 3. 30 TOTAL / 70 In recognition of and in the spirit of the Stanford University Honor Code, I certify
More informationTopics to be Covered. capacitance inductance transmission lines
Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of
More informationEE213, Spr 2017 HW#3 Due: May 17 th, in class. Figure 1
RULES: Please try to work on your own. Discussion is permissible, but identical submissions are unacceptable! Please show all intermediate steps: a correct solution without an explanation will get zero
More informationTopics. CMOS Design Multi-input delay analysis. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut
Topics CMO Design Multi-input delay analysis pring 25 Transmission Gate OUT Z OUT Z pring 25 Transmission Gate OUT When is low, the output is at high impedance When is high, the output follows However,
More informationVLSI Design, Fall Logical Effort. Jacob Abraham
6. Logical Effort 6. Logical Effort Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 207 September 20, 207 ECE Department, University of
More informationPhysical Design of Digital Integrated Circuits (EN0291 S40) Sherief Reda Division of Engineering, Brown University Fall 2006
Physical Design of Digital Integrated Circuits (EN0291 S40) Sherief Reda Division of Engineering, Brown University Fall 2006 1 Lecture 04: Timing Analysis Static timing analysis STA for sequential circuits
More informationLecture 12 CMOS Delay & Transient Response
EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 12 CMOS Delay & Transient Response Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology
More informationVLSI GATE LEVEL DESIGN UNIT - III P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI UNIT - III GATE LEVEL DESIGN P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) contents GATE LEVEL DESIGN : Logic Gates and Other complex gates, Switch logic, Alternate gate circuits, Time Delays, Driving large
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 18: March 27, 2018 Dynamic Logic, Charge Injection Lecture Outline! Sequential MOS Logic " D-Latch " Timing Constraints! Dynamic Logic " Domino
More informationVLSI VLSI CIRCUIT DESIGN PROCESSES P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI VLSI CIRCUIT DESIGN PROCESSES P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) SYLLABUS UNIT II VLSI CIRCUIT DESIGN PROCESSES: VLSI Design Flow, MOS Layers, Stick Diagrams, Design Rules and Layout, 2 m CMOS Design
More informationLecture 5. MOS Inverter: Switching Characteristics and Interconnection Effects
Lecture 5 MOS Inverter: Switching Characteristics and Interconnection Effects Introduction C load = (C gd,n + C gd,p + C db,n + C db,p ) + (C int + C g ) Lumped linear capacitance intrinsic cap. extrinsic
More informationHomework Assignment #1 Solutions EE 477 Spring 2017 Professor Parker
Homework Assignment #1 Solutions EE 477 Spring 2017 Professor Parker Note: + implies OR,. implies AND, ~ implies NOT Question 1: a) (4%) Use transmission gates to design a 3-input OR gate Note: There are
More informationEECS 141: SPRING 09 MIDTERM 2
University of California College of Engineering Department of Electrical Engineering and Computer Sciences J. Rabaey WeFr 2-3:30pm We, April 22, 2:00-3:30pm EECS 141: SPRING 09 MIDTERM 2 NAME Last First
More informationExam 2 Fall How does the total propagation delay (T HL +T LH ) for an inverter sized for equal
EE 434 Exam 2 Fall 2006 Name Instructions. Students may bring 2 pages of notes to this exam. There are 10 questions and 5 problems. The questions are worth 2 points each and the problems are all worth
More informationInterconnect (2) Buffering Techniques.Transmission Lines. Lecture Fall 2003
Interconnect (2) Buffering Techniques.Transmission Lines Lecture 12 18-322 Fall 2003 A few announcements Partners Lab Due Times Midterm 1 is nearly here Date: 10/14/02, time: 3:00-4:20PM, place: in class
More informationCMOS logic gates. João Canas Ferreira. March University of Porto Faculty of Engineering
CMOS logic gates João Canas Ferreira University of Porto Faculty of Engineering March 2016 Topics 1 General structure 2 General properties 3 Cell layout João Canas Ferreira (FEUP) CMOS logic gates March
More informationVery Large Scale Integration (VLSI)
Very Large Scale Integration (VLSI) Lecture 4 Dr. Ahmed H. Madian Ah_madian@hotmail.com Dr. Ahmed H. Madian-VLSI Contents Delay estimation Simple RC model Penfield-Rubenstein Model Logical effort Delay
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 017 Final Wednesday, May 3 4 Problems with point weightings shown.
More informationEE371 - Advanced VLSI Circuit Design
EE371 - Advanced VLSI Circuit Design Midterm Examination May 1999 Name: No. Points Score 1. 20 2. 24 3. 26 4. 20 TOTAL / 90 In recognition of and in the spirit of the Stanford University Honor Code, I
More informationHomework #2 10/6/2016. C int = C g, where 1 t p = t p0 (1 + C ext / C g ) = t p0 (1 + f/ ) f = C ext /C g is the effective fanout
0/6/06 Homework # Lecture 8, 9: Sizing and Layout of omplex MOS Gates Reading: hapter 4, sections 4.3-4.5 October 3 & 5, 06 hapter, section.5.5 Prof. R. Iris ahar Weste & Harris vailable on course webpage
More informationand V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )
ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets
More informationMOSIS REPORT. Spring MOSIS Report 1. MOSIS Report 2. MOSIS Report 3
MOSIS REPORT Spring 2010 MOSIS Report 1 MOSIS Report 2 MOSIS Report 3 MOSIS Report 1 Design of 4-bit counter using J-K flip flop I. Objective The purpose of this project is to design one 4-bit counter
More informationLecture 4: DC & Transient Response
Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide
More information9/18/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design
More informationSpiral 2 7. Capacitance, Delay and Sizing. Mark Redekopp
2-7.1 Spiral 2 7 Capacitance, Delay and Sizing Mark Redekopp 2-7.2 Learning Outcomes I understand the sources of capacitance in CMOS circuits I understand how delay scales with resistance, capacitance
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More informationNext, we check the race condition to see if the circuit will work properly. Note that the minimum logic delay is a single sum.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Last modified on May 1, 2003 by Dejan Markovic (dejan@eecs.berkeley.edu) Prof. Jan Rabaey EECS
More informationEECS 151/251A Homework 5
EECS 151/251A Homework 5 Due Monday, March 5 th, 2018 Problem 1: Timing The data-path shown below is used in a simple processor. clk rd1 rd2 0 wr regfile 1 0 ALU REG 1 The elements used in the design have
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design & Logical Effort Prof. blj@ece.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay
More informationEE141Microelettronica. CMOS Logic
Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit
More informationProblem Set 9 Solutions
CSE 26 Digital Computers: Organization and Logical Design - 27 Jon Turner Problem Set 9 Solutions. For each of the sequential circuits shown below, draw in the missing parts of the timing diagrams. You
More informationInterconnect (2) Buffering Techniques. Logical Effort
Interconnect (2) Buffering Techniques. Logical Effort Lecture 14 18-322 Fall 2002 Textbook: [Sections 4.2.1, 8.2.3] A few announcements! M1 is almost over: The check-off is due today (by 9:30PM) Students
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Apr 18, 011 Duration:.5 hrs ECE334 Digital Electronics Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationP. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design Prof. blj@eng.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay s CSE477 slides
More informationEE 560 CHIP INPUT AND OUTPUT (I/0) CIRCUITS. Kenneth R. Laker, University of Pennsylvania
1 EE 560 CHIP INPUT AND OUTPUT (I/0) CIRCUITS 2 -> ESD PROTECTION CIRCUITS (INPUT PADS) -> ON-CHIP CLOCK GENERATION & DISTRIBUTION -> OUTPUT PADS -> ON-CHIP NOISE DUE TO PARASITIC INDUCTANCE -> SUPER BUFFER
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 3, 2016 Combination Logic: Ratioed & Pass Logic, and Performance Lecture Outline! CMOS NOR2 Worst Case Analysis! Pass Transistor
More informationTopics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut
Topics Dynamic CMOS Sequential Design Memory and Control Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND or V DD via a low resistance
More informationLecture 16: Circuit Pitfalls
Introduction to CMOS VLSI Design Lecture 16: Circuit Pitfalls David Harris Harvey Mudd College Spring 2004 Outline Pitfalls Detective puzzle Given circuit and symptom, diagnose cause and recommend solution
More information5.0 CMOS Inverter. W.Kucewicz VLSICirciuit Design 1
5.0 CMOS Inverter W.Kucewicz VLSICirciuit Design 1 Properties Switching Threshold Dynamic Behaviour Capacitance Propagation Delay nmos/pmos Ratio Power Consumption Contents W.Kucewicz VLSICirciuit Design
More informationInterconnects. Wire Resistance Wire Capacitance Wire RC Delay Crosstalk Wire Engineering Repeaters. ECE 261 James Morizio 1
Interconnects Wire Resistance Wire Capacitance Wire RC Delay Crosstalk Wire Engineering Repeaters ECE 261 James Morizio 1 Introduction Chips are mostly made of wires called interconnect In stick diagram,
More informationDesignConEast 2005 Track 4: Power and Packaging (4-WA1)
DesignConEast 2005 Track 4: Power and Packaging (4-WA1) Design of a Low-Power Differential Repeater Using Low-Voltage Swing and Charge Recycling Authors: Brock J. LaMeres, University of Colorado / Sunil
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2016 Final Friday, May 6 5 Problems with point weightings shown.
More informationDigital Integrated Circuits A Design Perspective
igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational
More informationECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman Zarkesh-Ha Office: ECE Bldg. 30B Office hours: Tuesday :00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 CMOS
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay Estimation 2 Pass Transistors We have assumed source is grounded
More informationEE5780 Advanced VLSI CAD
EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay
More informationTHE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
More information3. Design a stick diagram for the PMOS logic shown below [16] Y = (A + B).C. 4. Design a layout diagram for the CMOS logic shown below [16]
Code No: RR420203 Set No. 1 1. (a) Find g m and r ds for an n-channel transistor with V GS = 1.2V; V tn = 0.8V; W/L = 10; µncox = 92 µa/v 2 and V DS = Veff + 0.5V The out put impedance constant. λ = 95.3
More informationDigital Integrated Circuits. The Wire * Fuyuzhuo. *Thanks for Dr.Guoyong.SHI for his slides contributed for the talk. Digital IC.
Digital Integrated Circuits The Wire * Fuyuzhuo *Thanks for Dr.Guoyong.SHI for his slides contributed for the talk Introduction The Wire transmitters receivers schematics physical 2 Interconnect Impact
More informationMidterm. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. Pass Transistor Logic. Restore Output.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 21, 2017 Transmission Gates, Euler Paths, Energy Basics Review Midterm! Midterm " Mean: 79.5 " Standard Dev: 14.5 2 Lecture Outline!
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 11-1:3 Thursday, October 6, 6:3-8:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationVLSI Circuit Design (EEC0056) Exam
Mestrado Integrado em Engenharia Eletrotécnica e de omputadores VLSI ircuit esign (EE0056) Exam 205/6 4 th year, 2 nd sem. uration: 2:30 Open notes Note: The test has 5 questions for 200 points. Show all
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Oldham Fall 1999
UNIVERSITY OF CLIFORNI College of Engineering Department of Electrical Engineering and Computer Sciences Professor Oldham Fall 1999 EECS 40 FINL EXM 13 December 1999 Name: Last, First Student ID: T: Kusuma
More informationCMOS Logic Gates. University of Connecticut 181
CMOS Logic Gates University of Connecticut 181 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and
More informationEE115C Digital Electronic Circuits Homework #4
EE115 Digital Electronic ircuits Homework #4 Problem 1 Power Dissipation Solution Vdd =1.0V onsider the source follower circuit used to drive a load L =20fF shown above. M1 and M2 are both NMOS transistors
More informationEEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #6: CMOS Logic Rajeevan mirtharajah University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW 3 due this
More informationECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120
ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of
More informationCPE/EE 427, CPE 527 VLSI Design I Delay Estimation. Department of Electrical and Computer Engineering University of Alabama in Huntsville
CPE/EE 47, CPE 57 VLSI Design I Delay Estimation Department of Electrical and Computer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) Review: CMOS Circuit
More informationLecture 6: DC & Transient Response
Lecture 6: DC & Transient Response Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Pass Transistors DC Response Logic Levels and Noise Margins
More informationEECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010
Signature: EECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010 obert Dick Show your work. Derivations are required for credit; end results are insufficient. Closed book. No electronic mental
More informationDigital Integrated Circuits
Chapter 6 The CMOS Inverter 1 Contents Introduction (MOST models) 0, 1 st, 2 nd order The CMOS inverter : The static behavior: o DC transfer characteristics, o Short-circuit current The CMOS inverter :
More informationToday s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
- Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
More informationCMOS Transistors, Gates, and Wires
CMOS Transistors, Gates, and Wires Should the hardware abstraction layers make today s lecture irrelevant? pplication R P C W / R W C W / 6.375 Complex Digital Systems Christopher atten February 5, 006
More informationDC and Transient. Courtesy of Dr. Daehyun Dr. Dr. Shmuel and Dr.
DC and Transient Courtesy of Dr. Daehyun Lim@WSU, Dr. Harris@HMC, Dr. Shmuel Wimer@BIU and Dr. Choi@PSU http://csce.uark.edu +1 (479) 575-604 yrpeng@uark.edu Pass Transistors We have assumed source is
More informationName: Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 205 Midterm Wednesday, November 4 Point values
More informationLecture 7 Circuit Delay, Area and Power
Lecture 7 Circuit Delay, Area and Power lecture notes from S. Mitra Intro VLSI System course (EE271) Introduction to VLSI Systems 1 Circuits and Delay Introduction to VLSI Systems 2 Power, Delay and Area:
More informationName: Answers. Mean: 83, Standard Deviation: 12 Q1 Q2 Q3 Q4 Q5 Q6 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Final Tuesday, December 15 Problem weightings
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 15, 2018 Euler Paths, Energy Basics and Optimization Midterm! Midterm " Mean: 89.7 " Standard Dev: 8.12 2 Lecture Outline! Euler
More informationPractice 7: CMOS Capacitance
Practice 7: CMOS Capacitance Digital Electronic Circuits Semester A 2012 MOSFET Capacitances MOSFET Capacitance Components 3 Gate to Channel Capacitance In general, the gate capacitance is similar to a
More informationInterconnects. Introduction
Interconnects Wire Resistance Wire Capacitance Wire RC Delay Crosstalk Wire Engineering Repeaters ECE 261 Krish Chakrabarty 1 Introduction Chips are mostly made of ires called interconnect In stick diagram,
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CAIFORNIA, BERKEEY College of Engineering Department of Electrical Engineering and Computer Sciences Elad Alon Homework #7 - Solutions EECS141 Due Thursday, October 22, 5pm, box in 240 Cory
More informationINTEGRATED CIRCUITS. For a complete data sheet, please also download:
INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC06 74HC/HCT/HCU/HCMOS Logic Package Information The IC06 74HC/HCT/HCU/HCMOS
More informationLecture 9: Sequential Logic Circuits. Reading: CH 7
Lecture 9: Sequential Logic Circuits Reading: CH 7 Sequential Logic FSM (Finite-state machine) Inputs Current State COMBINATIONAL LOGIC Registers Outputs = f(current, inputs) Next state 2 storage mechanisms
More informationEEE 421 VLSI Circuits
EEE 421 CMOS Properties Full rail-to-rail swing high noise margins» Logic levels not dependent upon the relative device sizes transistors can be minimum size ratioless Always a path to V dd or GND in steady
More information5. CMOS Gate Characteristics CS755
5. CMOS Gate Characteristics Last module: CMOS Transistor theory This module: DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Transistor ehavior 1) If the width of a transistor
More informationThe Linear-Feedback Shift Register
EECS 141 S02 Timing Project 2: A Random Number Generator R R R S 0 S 1 S 2 1 0 0 0 1 0 1 0 1 1 1 0 1 1 1 0 1 1 0 0 1 1 0 0 The Linear-Feedback Shift Register 1 Project Goal Design a 4-bit LFSR SPEED, SPEED,
More informationEECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010
Signature: EECS 312: Digital Integrated Circuits Midterm Exam 2 December 2010 Robert Dick Show your work. Derivations are required for credit; end results are insufficient. Closed book. No electronic mental
More informationE40M Capacitors. M. Horowitz, J. Plummer, R. Howe
E40M Capacitors 1 Reading Reader: Chapter 6 Capacitance A & L: 9.1.1, 9.2.1 2 Why Are Capacitors Useful/Important? How do we design circuits that respond to certain frequencies? What determines how fast
More informationLecture 14 - Digital Circuits (III) CMOS. April 1, 2003
6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 14-1 Lecture 14 - Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:
More informationThe Inverter. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Inverter Revised from Digital Integrated Circuits, Jan M. Rabaey el, 2003 Propagation Delay CMOS
More informationEE141- Spring 2007 Digital Integrated Circuits
EE141- Spring 27 igital Integrated Circuits Lecture 19 Sequential Circuits 1 Administrative Stuff Project Ph. 2 due Tu. 5pm 24 Cory box + email ee141- project@bwrc.eecs.berkeley.edu Hw 8 Posts this Fr.,
More informationCapacitance - 1. The parallel plate capacitor. Capacitance: is a measure of the charge stored on each plate for a given voltage such that Q=CV
Capacitance - 1 The parallel plate capacitor Capacitance: is a measure of the charge stored on each plate for a given voltage such that Q=CV Charge separation in a parallel-plate capacitor causes an internal
More informationThe Wire EE141. Microelettronica
The Wire 1 Interconnect Impact on Chip 2 Example: a Bus Network transmitters receivers schematics physical 3 Wire Models All-inclusive model Capacitance-only 4 Impact of Interconnect Parasitics Interconnect
More informationCMOS Logic Gates. University of Connecticut 172
CMOS Logic Gates University of Connecticut 172 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and
More informationDigital EE141 Integrated Circuits 2nd Combinational Circuits
Digital Integrated Circuits Designing i Combinational Logic Circuits 1 Combinational vs. Sequential Logic 2 Static CMOS Circuit t every point in time (except during the switching transients) each gate
More informationThe Wire. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Wire July 30, 2002 1 The Wire transmitters receivers schematics physical 2 Interconnect Impact on
More information9/18/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI esign Chapter IV esigning Sequential Logic Circuits (Chapter 7) 1 Sequential Logic Inputs Current State COMBINATIONAL LOGIC Registers Outputs Next state 2 storage mechanisms positive
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
More informationEEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced
More informationSequential Logic Circuits
Chapter 4 Sequential Logic Circuits 4 1 The defining characteristic of a combinational circuit is that its output depends only on the current inputs applied to the circuit. The output of a sequential circuit,
More information