Topics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut

Size: px
Start display at page:

Download "Topics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut"

Transcription

1 Topics Dynamic CMOS Sequential Design Memory and Control

2 Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND or V DD via a low resistance path. fan-in of n requires 2n (n N-type + n P-type) devices Dynamic circuits rely on the temporary storage of signal values on the capacitance of high impedance nodes. requires only n+2 (n+1 N-type + 1 P-type) transistors

3 Dynamic CMOS nmos logic structure with precharged pullup INPUTS N logic Precharge to VDD when clock is low Evaluate when clock is high

4 Dynamic Gate M p Out M p on off 1 Out In 1 In 2 In 3 PDN C L A B ((AB)+C) C M e Two phase operation M e off on Precharge ( = 0) Evaluate ( = 1)

5 Conditions on Output Once the output of a dynamic gate is discharged, it cannot be charged again until the next precharge operation. Inputs to the gate can make at most one transition during evaluation. Output can be in the high impedance state during and after evaluation (PDN off), state is stored on C L

6 Properties of Dynamic Gates Logic function is implemented by the PDN only number of transistors is N + 2 (versus 2N for static complementary CMOS) Full swing outputs (V OL = GND and V OH = V DD Non-ratioed - sizing of the devices does not affect the logic levels Faster switching speeds DD ) reduced load capacitance due to lower input capacitance (C( in ) reduced load capacitance due to smaller output loading (Cout( Cout) no I sc, so all the current provided by PDN goes into discharging C L

7 Properties of Dynamic Gates Overall power dissipation usually higher than static CMOS no static current path ever exists between V DD and GND (including P sc ) no glitching higher transition probabilities extra load on PDN starts to work as soon as the input signals exceed V Tn, so V M, V IH and V IL equal to V Tn low noise margin (NM L ) Needs a precharge/evaluate clock

8 Dynamic CMOS Advantages Fewer transistors than CMOS - on the same order as pseudo-nmos Smaller load capacitances - faster speed Disadvantages Inputs must be stable during evaluate phase Can not be cascaded Charge sharing

9 Issues in Dynamic Design 1: Charge Leakage M p Out A C L M e V Out Evaluate Precharge Leakage sources Dominant component is subthreshold current

10 Solution to Charge Leakage Keeper M p M kp A B C L Out M e Same approach as level restorer for pass-transistor logic Increase size of inverter to increase capacitance

11 Issues in Dynamic Design 2: Charge Sharing A M p C L Out Charge stored originally on C L is redistributed (shared) over C L and C A leading to reduced robustness B=0 M e C A C B

12 Dynamic CMOS Charge Sharing C o C i C i C i Assume that the internal capacitances have been discharged In the precharge phase, the output capacitance gets charged During evaluation, if all the inputs are high except the bottom one, the output capacitance gets distributed to the internal capacitance The output voltage will drop to C o + 2C i This could be low enough to trigger the inverter, causing a wrong value on the output V DD C o C i

13 Solution to Charge Redistribution A M p M kp Out B M e Precharge internal nodes using a clock-driven transistor (at the cost of increased area and power)

14 Dynamic CMOS Cascade problem INPUTS N logic N logic Since the evaluation from the first stage takes some time, the second stage will start evaluating with the precharged input rather than the evaluated input

15 Cascading Dynamic Gates V In M p Out1 M p Out2 In M e M e Out1 V Tn Out2 ΔV t Only 0 1 transitions allowed at inputs!

16 Domino Logic Solves cascade problem INPUTS N logic N logic Since the precharged output from the first stage is 0, it will never activate the pulldown network in the second stage until the first stage evaluation has completed.

17 NP Domino (Zipper) CMOS INPUTS N logic P logic Since the second stage is build from p-logic, the precharged output from the first stage will not activate the inputs of the second stage

18 Sequential Logic In our text: a latch is level sensitive a register is edge-triggered a flip-flop is bistable There are many different naming conventions For instance, many books call edge-triggered registers flip-flops as well

19 Latch versus Register Latch stores data when clock is low Register stores data when clock rises D Q D Q D Q D Q

20 Latches Positive Latch Negative Latch In D Q Out In D Q Out G G clk clk In Out In Out Out stable Out follows In Out stable Out follows In

21 Latch-Based Design N latch is transparent when φ = 0 φ P latch is transparent when φ = 1 N Latch Logic P Latch Logic

22 Timing Definitions t su t hold t D Register Q D DATA STABLE t t c 2 q Q DATA STABLE t

23 Characterizing Timing t D 2 Q D Q D Q t C 2 Q t C 2 Q Register Latch

24 Maximum Clock Frequency φ s F LOGIC t p,comb t clk-q + t p,comb + t setup = T Also: t cdreg + t cdlogic > t hold t cd : contamination delay = minimum delay

25 Positive Feedback: Bi-Stability V i 1 V o1 = V i 2 V o2 V o1 V i2 V o2 = V i 1 V i1 V o2 A V i2 = V o1 C B V i1 = V o2

26 Meta-Stability A A C C B B V i 1 5 V o2 Gain should be larger than 1 in the transition region V i1 5 V o2

27 Writing into a Static Latch Use the clock as a decoupling signal, that distinguishes between the transparent and opaque states Q D D D Converting into a MUX Forcing the state (can implement as NMOS-only)

28 Mux-Based Latches Negative latch (transparent when = 0) Positive latch (transparent when = 1) 1 Q 0 Q D 0 D 1 Q = Q + In Q = Q + In

29 Mux-Based Latch Q D

30 Mux-Based Latch Q M Q M NMOS only Non-overlapping clocks

31 Master-Slave (Edge-Triggered) Register Slave Master 0 Q D D 1 0 Q M 1 Q M Q Two opposite latches trigger on edge Also called master-slave latch pair

32 Master-Slave Register Multiplexer-based latch pair I 2 T 2 I 3 I 5 T 4 I 6 Q D I 1 T 1 Q M I 4 T 3

33 Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH DRAM LIFO Shift Register CAM

34 Memory Design Random Access Memory Row decoder 2 m+k memory cells wide n-1:k k-1:0 Column Decoder n bit address Sense Amplifier m bit data word

35 Memory Design Static RAM Cell Word select bit bit

36 Memory Design Reads are straightforward May need precharge circuitry to pull up bit line Writes are trickier Use driver transistors that will pull-up or pull- down bit line as necessary

37 Memory Design Static RAM Cell with precharge precharge Word select bit bit

38 Memory Design Static RAM Cell write circuitry precharge Word select Write enable Write data

39 3-Transistor DRAM Cell BL 1 BL2 WWL RWL WWL M 3 RWL M 1 X M 2 X V DD 2 V T C S BL 1 V DD BL 2 V DD 2 V T DV No constraints on device ratios Reads are non-destructive Value stored at node X when writing a 1 = V WWL -V Tn

40 3T-DRAM Layout BL2 BL1 GND RWL M3 M2 WWL M1

41 1-Transistor DRAM Cell BL WL Write 1 Read 1 WL M 1 X GND V DD 2 V T C S BL V DD /2 V DD V sensing C BL Write: C S is charged or discharged by asserting WL and BL. Read: Charge redistribution takes places between bit line and storage capacitance ΔV = VBL V PRE = V BIT V PRE C S C S + C BL Voltage swing is small; typically around 250 mv.

42 DRAM Cell Observations 1T DRAM requires a sense amplifier for each bit line, due to charge redistribution read-out. DRAM memory cells are single ended in contrast to SRAM cells. The read-out of the 1T DRAM cell is destructive; read and refresh operations are necessary for correct operation. Unlike 3T cell, 1T cell requires presence of an extra capacitance that must be explicitly included in the design. When writing a 1 into a DRAM cell, a threshold voltage is lost. This charge loss can be circumvented by bootstrapping the word lines to a higher value than V DD

43 Sense Amp Operation V BL V(1) V PRE DV(1) Sense amp activated Word line activated V(0) t

44 1-T DRAM Cell Capacitor Metal word line Poly n + n + Inversion layer Poly induced by plate bias Cross-section SiO 2 Field Oxide Diffused bit line Polysilicon gate Layout Polysilicon plate M 1 word line Uses Polysilicon-Diffusion Capacitance Expensive in Area

45 Memory Design RAMs Static RAM is faster, does not need to be refreshed Dynamic RAM is more compact

46 Next class More about memory Control logic

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 19: March 29, 2018 Memory Overview, Memory Core Cells Today! Charge Leakage/Charge Sharing " Domino Logic Design Considerations! Logic Comparisons!

More information

EE141Microelettronica. CMOS Logic

EE141Microelettronica. CMOS Logic Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit

More information

Digital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories

Digital Integrated Circuits A Design Perspective. Semiconductor. Memories. Memories Digital Integrated Circuits A Design Perspective Semiconductor Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies Semiconductor Memory Classification

More information

! Charge Leakage/Charge Sharing. " Domino Logic Design Considerations. ! Logic Comparisons. ! Memory. " Classification. " ROM Memories.

! Charge Leakage/Charge Sharing.  Domino Logic Design Considerations. ! Logic Comparisons. ! Memory.  Classification.  ROM Memories. ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec 9: March 9, 8 Memory Overview, Memory Core Cells Today! Charge Leakage/ " Domino Logic Design Considerations! Logic Comparisons! Memory " Classification

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective Digital Integrated Circuits Design Perspective Designing Combinational Logic Circuits Fuyuzhuo School of Microelectronics,SJTU Introduction Digital IC Dynamic Logic Introduction Digital IC 2 EE141 Dynamic

More information

Semiconductor Memories

Semiconductor Memories Semiconductor References: Adapted from: Digital Integrated Circuits: A Design Perspective, J. Rabaey UCB Principles of CMOS VLSI Design: A Systems Perspective, 2nd Ed., N. H. E. Weste and K. Eshraghian

More information

Semiconductor Memory Classification

Semiconductor Memory Classification Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 21: April 4, 2017 Memory Overview, Memory Core Cells Penn ESE 570 Spring 2017 Khanna Today! Memory " Classification " ROM Memories " RAM Memory

More information

EE241 - Spring 2000 Advanced Digital Integrated Circuits. References

EE241 - Spring 2000 Advanced Digital Integrated Circuits. References EE241 - Spring 2000 Advanced Digital Integrated Circuits Lecture 26 Memory References Rabaey, Digital Integrated Circuits Memory Design and Evolution, VLSI Circuits Short Course, 1998.» Gillingham, Evolution

More information

Semiconductor Memories

Semiconductor Memories !"#"$%&'()$*#+%$*,' -"+./"$0 1'!*0"#)'2*+03*.$"4* Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 !"#$%&'()*&'*+&, Memory Classification Memory Architectures

More information

Digital Integrated Circuits Designing Combinational Logic Circuits. Fuyuzhuo

Digital Integrated Circuits Designing Combinational Logic Circuits. Fuyuzhuo Digital Integrated Circuits Designing Combinational Logic Circuits Fuyuzhuo Introduction Digital IC Dynamic Logic Introduction Digital IC EE141 2 Dynamic logic outline Dynamic logic principle Dynamic logic

More information

Semiconductor memories

Semiconductor memories Semiconductor memories Semiconductor Memories Data in Write Memory cell Read Data out Some design issues : How many cells? Function? Power consuption? Access type? How fast are read/write operations? Semiconductor

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective Semiconductor Memories Adapted from Chapter 12 of Digital Integrated Circuits A Design Perspective Jan M. Rabaey et al. Copyright 2003 Prentice Hall/Pearson Outline Memory Classification Memory Architectures

More information

Lecture 25. Semiconductor Memories. Issues in Memory

Lecture 25. Semiconductor Memories. Issues in Memory Lecture 25 Semiconductor Memories Issues in Memory Memory Classification Memory Architectures TheMemoryCore Periphery 1 Semiconductor Memory Classification RWM NVRWM ROM Random Access Non-Random Access

More information

GMU, ECE 680 Physical VLSI Design 1

GMU, ECE 680 Physical VLSI Design 1 ECE680: Physical VLSI Design Chapter VIII Semiconductor Memory (chapter 12 in textbook) 1 Chapter Overview Memory Classification Memory Architectures The Memory Core Periphery Reliability Case Studies

More information

SEMICONDUCTOR MEMORIES

SEMICONDUCTOR MEMORIES SEMICONDUCTOR MEMORIES Semiconductor Memory Classification RWM NVRWM ROM Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable (PROM) SRAM FIFO FLASH DRAM LIFO Shift Register CAM

More information

Hw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today

Hw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today EECS141 1 Hw 8 Posted Last one to be graded Due Friday April 30 Hw 6 and 7 Graded and available Project Phase 2 Graded Project Phase 3 Launch Today EECS141 2 1 6 5 4 3 2 1 0 1.5 2 2.5 3 3.5 4 Frequency

More information

9/18/2008 GMU, ECE 680 Physical VLSI Design

9/18/2008 GMU, ECE 680 Physical VLSI Design ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design

More information

Magnetic core memory (1951) cm 2 ( bit)

Magnetic core memory (1951) cm 2 ( bit) Magnetic core memory (1951) 16 16 cm 2 (128 128 bit) Semiconductor Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random Access Non-Random Access EPROM E 2 PROM

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Designing Sequential Logic Circuits November 2002 Sequential Logic Inputs Current State COMBINATIONAL

More information

COMP 103. Lecture 16. Dynamic Logic

COMP 103. Lecture 16. Dynamic Logic COMP 03 Lecture 6 Dynamic Logic Reading: 6.3, 6.4 [ll lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] COMP03

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 18: March 27, 2018 Dynamic Logic, Charge Injection Lecture Outline! Sequential MOS Logic " D-Latch " Timing Constraints! Dynamic Logic " Domino

More information

EECS 141 F01 Lecture 17

EECS 141 F01 Lecture 17 EECS 4 F0 Lecture 7 With major inputs/improvements From Mary-Jane Irwin (Penn State) Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND

More information

Semiconductor Memories. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Paolo Spirito

Semiconductor Memories. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Paolo Spirito Semiconductor Memories Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Paolo Spirito Memory Classification Memory Classification Read-Write Memory Non-Volatile Read-Write Memory Read-Only Memory Random

More information

Administrative Stuff

Administrative Stuff EE141- Spring 2004 Digital Integrated Circuits Lecture 30 PERSPECTIVES 1 Administrative Stuff Homework 10 posted just for practice. No need to turn in (hw 9 due today). Normal office hours next week. HKN

More information

EE141- Fall 2002 Lecture 27. Memory EE141. Announcements. We finished all the labs No homework this week Projects are due next Tuesday 9am EE141

EE141- Fall 2002 Lecture 27. Memory EE141. Announcements. We finished all the labs No homework this week Projects are due next Tuesday 9am EE141 - Fall 2002 Lecture 27 Memory Announcements We finished all the labs No homework this week Projects are due next Tuesday 9am 1 Today s Lecture Memory:» SRAM» DRAM» Flash Memory 2 Floating-gate transistor

More information

MODULE 5 Chapter 7. Clocked Storage Elements

MODULE 5 Chapter 7. Clocked Storage Elements MODULE 5 Chapter 7 Clocked Storage Elements 3/9/2015 1 Outline Background Clocked Storage Elements Timing, terminology, classification Static CSEs Latches Registers Dynamic CSEs Latches Registers 3/9/2015

More information

GMU, ECE 680 Physical VLSI Design

GMU, ECE 680 Physical VLSI Design ECE680: Physical VLSI esign Chapter IV esigning Sequential Logic Circuits (Chapter 7) 1 Sequential Logic Inputs Current State COMBINATIONAL LOGIC Registers Outputs Next state 2 storage mechanisms positive

More information

Lecture 9: Sequential Logic Circuits. Reading: CH 7

Lecture 9: Sequential Logic Circuits. Reading: CH 7 Lecture 9: Sequential Logic Circuits Reading: CH 7 Sequential Logic FSM (Finite-state machine) Inputs Current State COMBINATIONAL LOGIC Registers Outputs = f(current, inputs) Next state 2 storage mechanisms

More information

CMOS Digital Integrated Circuits Lec 13 Semiconductor Memories

CMOS Digital Integrated Circuits Lec 13 Semiconductor Memories Lec 13 Semiconductor Memories 1 Semiconductor Memory Types Semiconductor Memories Read/Write (R/W) Memory or Random Access Memory (RAM) Read-Only Memory (ROM) Dynamic RAM (DRAM) Static RAM (SRAM) 1. Mask

More information

9/18/2008 GMU, ECE 680 Physical VLSI Design

9/18/2008 GMU, ECE 680 Physical VLSI Design ECE680: Physical VLSI esign Chapter IV esigning Sequential Logic Circuits (Chapter 7) 1 Sequential Logic Inputs Current State COMBINATIONAL LOGIC Registers Outputs Next state 2 storage mechanisms positive

More information

Pass-Transistor Logic

Pass-Transistor Logic -all 26 Digital tegrated ircuits nnouncements No new homework this week roject phase one due on Monday Midterm 2 next Thursday Review session on Tuesday Lecture 8 Logic Dynamic Logic EE4 EE4 2 lass Material

More information

Chapter Overview. Memory Classification. Memory Architectures. The Memory Core. Periphery. Reliability. Memory

Chapter Overview. Memory Classification. Memory Architectures. The Memory Core. Periphery. Reliability. Memory SRAM Design Chapter Overview Classification Architectures The Core Periphery Reliability Semiconductor Classification RWM NVRWM ROM Random Access Non-Random Access EPROM E 2 PROM Mask-Programmed Programmable

More information

EE141- Spring 2007 Digital Integrated Circuits

EE141- Spring 2007 Digital Integrated Circuits EE141- Spring 27 igital Integrated Circuits Lecture 19 Sequential Circuits 1 Administrative Stuff Project Ph. 2 due Tu. 5pm 24 Cory box + email ee141- project@bwrc.eecs.berkeley.edu Hw 8 Posts this Fr.,

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic esigning Sequential Logic Circuits November 2002 Sequential Logic Inputs Current State COMBINATIONAL LOGIC

More information

Semiconductor Memories

Semiconductor Memories Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 Chapter Overview Memory Classification Memory Architectures

More information

ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018

ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΔΙΑΛΕΞΗ 11: Dynamic CMOS Circuits ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) (ack: Prof. Mary Jane Irwin and Vijay Narayanan) [Προσαρμογή από

More information

Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. November Digital Integrated Circuits 2nd Sequential Circuits

Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. November Digital Integrated Circuits 2nd Sequential Circuits igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic esigning i Sequential Logic Circuits November 2002 Sequential Logic Inputs Current State COMBINATIONAL

More information

! Memory. " RAM Memory. ! Cell size accounts for most of memory array size. ! 6T SRAM Cell. " Used in most commercial chips

! Memory.  RAM Memory. ! Cell size accounts for most of memory array size. ! 6T SRAM Cell.  Used in most commercial chips ESE 57: Digital Integrated Circuits and VLSI Fundamentals Lec : April 3, 8 Memory: Core Cells Today! Memory " RAM Memory " Architecture " Memory core " SRAM " DRAM " Periphery Penn ESE 57 Spring 8 - Khanna

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic esigning Sequential Logic Circuits November 2002 Naming Conventions In our text: a latch is level sensitive

More information

Dynamic Combinational Circuits. Dynamic Logic

Dynamic Combinational Circuits. Dynamic Logic Dynamic Combinational Circuits Dynamic circuits Charge sharing, charge redistribution Domino logic np-cmos (zipper CMOS) Krish Chakrabarty 1 Dynamic Logic Dynamic gates use a clocked pmos pullup Two modes:

More information

ECE520 VLSI Design. Lecture 23: SRAM & DRAM Memories. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 23: SRAM & DRAM Memories. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 23: SRAM & DRAM Memories Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture

More information

Semiconductor Memories

Semiconductor Memories Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Semiconductor Memories December 20, 2002 Chapter Overview Memory Classification Memory Architectures

More information

COMBINATIONAL LOGIC. Combinational Logic

COMBINATIONAL LOGIC. Combinational Logic COMINTIONL LOGIC Overview Static CMOS Conventional Static CMOS Logic Ratioed Logic Pass Transistor/Transmission Gate Logic Dynamic CMOS Logic Domino np-cmos Combinational vs. Sequential Logic In Logic

More information

Memory Trend. Memory Architectures The Memory Core Periphery

Memory Trend. Memory Architectures The Memory Core Periphery Semiconductor Memories: an Introduction ti Talk Overview Memory Trend Memory Classification Memory Architectures The Memory Core Periphery Reliability Semiconductor Memory Trends (up to the 90 s) Memory

More information

Integrated Circuits & Systems

Integrated Circuits & Systems Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 18 CMOS Sequential Circuits - 1 guntzel@inf.ufsc.br

More information

Memory, Latches, & Registers

Memory, Latches, & Registers Memory, Latches, & Registers 1) Structured Logic Arrays 2) Memory Arrays 3) Transparent Latches 4) How to save a few bucks at toll booths 5) Edge-triggered Registers L13 Memory 1 General Table Lookup Synthesis

More information

Dynamic Combinational Circuits. Dynamic Logic

Dynamic Combinational Circuits. Dynamic Logic Dynamic Combinational Circuits Dynamic circuits Charge sharing, charge redistribution Domino logic np-cmos (zipper CMOS) Krish Chakrabarty 1 Dynamic Logic Dynamic gates use a clocked pmos pullup Two modes:

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective Designing ombinational Logic ircuits dapted from hapter 6 of Digital Integrated ircuits Design Perspective Jan M. Rabaey et al. opyright 2003 Prentice Hall/Pearson 1 ombinational vs. Sequential Logic In

More information

ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018

ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΔΙΑΛΕΞΕΙΣ 12-13: esigning ynamic and Static CMOS Sequential Circuits ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) (ack: Prof. Mary Jane Irwin and

More information

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 017 Final Wednesday, May 3 4 Problems with point weightings shown.

More information

EEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

EEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation EEC 118 Lecture #6: CMOS Logic Rajeevan mirtharajah University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW 3 due this

More information

Topics. CMOS Design Multi-input delay analysis. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut

Topics. CMOS Design Multi-input delay analysis. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut Topics CMO Design Multi-input delay analysis pring 25 Transmission Gate OUT Z OUT Z pring 25 Transmission Gate OUT When is low, the output is at high impedance When is high, the output follows However,

More information

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2016 Final Friday, May 6 5 Problems with point weightings shown.

More information

Digital EE141 Integrated Circuits 2nd Combinational Circuits

Digital EE141 Integrated Circuits 2nd Combinational Circuits Digital Integrated Circuits Designing i Combinational Logic Circuits 1 Combinational vs. Sequential Logic 2 Static CMOS Circuit t every point in time (except during the switching transients) each gate

More information

CMPEN 411. Spring Lecture 18: Static Sequential Circuits

CMPEN 411. Spring Lecture 18: Static Sequential Circuits CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 18: Static Sequential Circuits [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp11

More information

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals

ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.

More information

EE141. EE141-Spring 2006 Digital Integrated Circuits. Administrative Stuff. Class Material. Flash Memory. Read-Only Memory Cells MOS OR ROM

EE141. EE141-Spring 2006 Digital Integrated Circuits. Administrative Stuff. Class Material. Flash Memory. Read-Only Memory Cells MOS OR ROM EE141-pring 2006 igital Integrated Circuits Lecture 29 Flash memory Administrative tuff reat job on projects and posters! Homework #10 due today Lab reports due this week Friday lab in 353 Final exam May

More information

F14 Memory Circuits. Lars Ohlsson

F14 Memory Circuits. Lars Ohlsson Lars Ohlsson 2018-10-18 F14 Memory Circuits Outline Combinatorial vs. sequential logic circuits Analogue multivibrator circuits Noise in digital circuits CMOS latch CMOS SR flip flop 6T SRAM cell 1T DRAM

More information

Semiconductor Memories

Semiconductor Memories Introduction Classification of Memory Devices "Combinational Logic" Read Write Memories Non Volatile RWM Read Only Memory Random Access Non-Random Access Static RAM FIFO Dynamic RAM LIFO Shift Register

More information

Miscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.]

Miscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] Miscellaneous Lecture topics Mary Jane Irwin [dapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] MOS Switches MOS transistors can be viewed as simple switches. In an N-Switch, the

More information

CPE/EE 427, CPE 527 VLSI Design I L18: Circuit Families. Outline

CPE/EE 427, CPE 527 VLSI Design I L18: Circuit Families. Outline CPE/EE 47, CPE 57 VLI Design I L8: Circuit Families Department of Electrical and Computer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) www.ece.uah.edu/~milenka/cpe57-05f

More information

Power Dissipation. Where Does Power Go in CMOS?

Power Dissipation. Where Does Power Go in CMOS? Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit

More information

Name: Answers. Mean: 83, Standard Deviation: 12 Q1 Q2 Q3 Q4 Q5 Q6 Total. ESE370 Fall 2015

Name: Answers. Mean: 83, Standard Deviation: 12 Q1 Q2 Q3 Q4 Q5 Q6 Total. ESE370 Fall 2015 University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Final Tuesday, December 15 Problem weightings

More information

CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 17: Dynamic Sequential Circuits And Timing Issues

CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 17: Dynamic Sequential Circuits And Timing Issues CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 17: Dynamic Sequential Circuits And Timing Issues [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan,

More information

CMOS Inverter (static view)

CMOS Inverter (static view) Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:

More information

LOGIC CIRCUITS. Basic Experiment and Design of Electronics. Ho Kyung Kim, Ph.D.

LOGIC CIRCUITS. Basic Experiment and Design of Electronics. Ho Kyung Kim, Ph.D. Basic Experiment and Design of Electronics LOGIC CIRCUITS Ho Kyung Kim, Ph.D. hokyung@pusan.ac.kr School of Mechanical Engineering Pusan National University Digital IC packages TTL (transistor-transistor

More information

Lecture 16: Circuit Pitfalls

Lecture 16: Circuit Pitfalls Introduction to CMOS VLSI Design Lecture 16: Circuit Pitfalls David Harris Harvey Mudd College Spring 2004 Outline Pitfalls Detective puzzle Given circuit and symptom, diagnose cause and recommend solution

More information

THE INVERTER. Inverter

THE INVERTER. Inverter THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)

More information

Clock signal in digital circuit is responsible for synchronizing the transfer to the data between processing elements.

Clock signal in digital circuit is responsible for synchronizing the transfer to the data between processing elements. 1 2 Introduction Clock signal in digital circuit is responsible for synchronizing the transfer to the data between processing elements. Defines the precise instants when the circuit is allowed to change

More information

Lecture 14: Circuit Families

Lecture 14: Circuit Families Introduction to CMOS VLSI Design Lecture 4: Circuit Families David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Pseudo-nMOS Logic q Dynamic Logic q

More information

Properties of CMOS Gates Snapshot

Properties of CMOS Gates Snapshot MOS logic 1 Properties of MOS Gates Snapshot High noise margins: V OH and V OL are at V DD and GND, respectively. No static power consumption: There never exists a direct path between V DD and V SS (GND)

More information

CPE/EE 427, CPE 527 VLSI Design I Pass Transistor Logic. Review: CMOS Circuit Styles

CPE/EE 427, CPE 527 VLSI Design I Pass Transistor Logic. Review: CMOS Circuit Styles PE/EE 427, PE 527 VLI Design I Pass Transistor Logic Department of Electrical and omputer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) Review: MO ircuit

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational

More information

Topics to be Covered. capacitance inductance transmission lines

Topics to be Covered. capacitance inductance transmission lines Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of

More information

CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 07: Pass Transistor Logic

CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 07: Pass Transistor Logic CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 07: Pass Transistor Logic [dapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey,. Chandrakasan,. Nikolic] Sp11 CMPEN 411

More information

Introduction to Computer Engineering. CS/ECE 252, Fall 2012 Prof. Guri Sohi Computer Sciences Department University of Wisconsin Madison

Introduction to Computer Engineering. CS/ECE 252, Fall 2012 Prof. Guri Sohi Computer Sciences Department University of Wisconsin Madison Introduction to Computer Engineering CS/ECE 252, Fall 2012 Prof. Guri Sohi Computer Sciences Department University of Wisconsin Madison Chapter 3 Digital Logic Structures Slides based on set prepared by

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 17: March 23, 2017 Energy and Power Optimization, Design Space Exploration, Synchronous MOS Logic Lecture Outline! Energy and Power Optimization

More information

Hold Time Illustrations

Hold Time Illustrations Hold Time Illustrations EE213-L09-Sequential Logic.1 Pingqiang, ShanghaiTech, 2018 Hold Time Illustrations EE213-L09-Sequential Logic.2 Pingqiang, ShanghaiTech, 2018 Hold Time Illustrations EE213-L09-Sequential

More information

CMOS Inverter. Performance Scaling

CMOS Inverter. Performance Scaling Announcements Exam #2 regrade requests due today. Homework #8 due today. Final Exam: Th June 12, 8:30 10:20am, CMU 120 (extension to 11:20am requested). Grades available for viewing via Catalyst. CMOS

More information

Chapter 5 CMOS Logic Gate Design

Chapter 5 CMOS Logic Gate Design Chapter 5 CMOS Logic Gate Design Section 5. -To achieve correct operation of integrated logic gates, we need to satisfy 1. Functional specification. Temporal (timing) constraint. (1) In CMOS, incorrect

More information

Lecture 6: Circuit design part 1

Lecture 6: Circuit design part 1 Lecture 6: Circuit design part 6. Combinational circuit design 6. Sequential circuit design 6.3 Circuit simulation 6.4. Hardware description language Combinational Circuit Design. Combinational circuit

More information

Static CMOS Circuits. Example 1

Static CMOS Circuits. Example 1 Static CMOS Circuits Conventional (ratio-less) static CMOS Covered so far Ratio-ed logic (depletion load, pseudo nmos) Pass transistor logic ECE 261 Krish Chakrabarty 1 Example 1 module mux(input s, d0,

More information

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)

CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view) CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN

More information

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Total Power. Energy and Power Optimization. Worksheet Problem 1

Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Total Power. Energy and Power Optimization. Worksheet Problem 1 ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 20, 2018 Energy and Power Optimization, Design Space Exploration Lecture Outline! Energy and Power Optimization " Tradeoffs! Design

More information

MOSFET and CMOS Gate. Copy Right by Wentai Liu

MOSFET and CMOS Gate. Copy Right by Wentai Liu MOSFET and CMOS Gate CMOS Inverter DC Analysis - Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max

More information

S No. Questions Bloom s Taxonomy Level UNIT-I

S No. Questions Bloom s Taxonomy Level UNIT-I GROUP-A (SHORT ANSWER QUESTIONS) S No. Questions Bloom s UNIT-I 1 Define oxidation & Classify different types of oxidation Remember 1 2 Explain about Ion implantation Understand 1 3 Describe lithography

More information

Clock Strategy. VLSI System Design NCKUEE-KJLEE

Clock Strategy. VLSI System Design NCKUEE-KJLEE Clock Strategy Clocked Systems Latch and Flip-flops System timing Clock skew High speed latch design Phase locked loop ynamic logic Multiple phase Clock distribution Clocked Systems Most VLSI systems are

More information

Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015

Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015 University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Midterm 1 Monday, September 28 5 problems

More information

Chapter 7. Sequential Circuits Registers, Counters, RAM

Chapter 7. Sequential Circuits Registers, Counters, RAM Chapter 7. Sequential Circuits Registers, Counters, RAM Register - a group of binary storage elements suitable for holding binary info A group of FFs constitutes a register Commonly used as temporary storage

More information

EE141-Fall 2011 Digital Integrated Circuits

EE141-Fall 2011 Digital Integrated Circuits EE4-Fall 20 Digital Integrated Circuits Lecture 5 Memory decoders Administrative Stuff Homework #6 due today Project posted Phase due next Friday Project done in pairs 2 Last Lecture Last lecture Logical

More information

CMOS Logic Gates. University of Connecticut 172

CMOS Logic Gates. University of Connecticut 172 CMOS Logic Gates University of Connecticut 172 Basic CMOS Inverter Operation V IN P O N O p-channel enhancementtype MOSFET; V T < 0 n-channel enhancementtype MOSFET; V T > 0 If V IN 0, N O is cut off and

More information

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar

More information

Lecture 4: Implementing Logic in CMOS

Lecture 4: Implementing Logic in CMOS Lecture 4: Implementing Logic in CMOS Mark Mcermott Electrical and Computer Engineering The University of Texas at ustin Review of emorgan s Theorem Recall that: () = + and = ( + ) (+) = and + = ( ) ()

More information

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)

ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view) ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]

More information

EEC 116 Lecture #5: CMOS Logic. Rajeevan Amirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation

EEC 116 Lecture #5: CMOS Logic. Rajeevan Amirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation EEC 116 Lecture #5: CMOS Logic Rajeevan mirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW

More information

ALU A functional unit

ALU A functional unit ALU A functional unit that performs arithmetic operations such as ADD, SUB, MPY logical operations such as AND, OR, XOR, NOT on given data types: 8-,16-,32-, or 64-bit values A n-1 A n-2... A 1 A 0 B n-1

More information

CMOS Digital Integrated Circuits Lec 10 Combinational CMOS Logic Circuits

CMOS Digital Integrated Circuits Lec 10 Combinational CMOS Logic Circuits Lec 10 Combinational CMOS Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic circuit Out In Combinational Logic circuit Out State Combinational The output is determined only by

More information

LOGIC CIRCUITS. Basic Experiment and Design of Electronics

LOGIC CIRCUITS. Basic Experiment and Design of Electronics Basic Experiment and Design of Electronics LOGIC CIRCUITS Ho Kyung Kim, Ph.D. hokyung@pusan.ac.kr School of Mechanical Engineering Pusan National University Outline Combinational logic circuits Output

More information

CPE/EE 427, CPE 527 VLSI Design I Delay Estimation. Department of Electrical and Computer Engineering University of Alabama in Huntsville

CPE/EE 427, CPE 527 VLSI Design I Delay Estimation. Department of Electrical and Computer Engineering University of Alabama in Huntsville CPE/EE 47, CPE 57 VLSI Design I Delay Estimation Department of Electrical and Computer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) Review: CMOS Circuit

More information