Sadayuki Yoshitomi. Semiconductor Company 2007/01/25
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1 Sadayuki Yoshitomi. Semiconductor Company Copyright 2006, Toshiba Corporation. ASP-DAC 2007
2 . Make the best of Electro-Magnetic (EM) simulation. Is EM simulator applicable for silicon technology? EM simulator enables accurate modeling of passive devices (Inductor and MIM capacitor ) on silicon. 2. Utilize very-accurate compact model. Looking at the EKV3.0 MOSFET Model. Accuracy of conductance. NS effects. 3. Use the Co-simulation Technique for final evaluation. Case:CMOS Amplifier Case2:CMOS VCO Case3:BiCMOS LNA 2
3 A A K~.7.2um 0.6um 0.3um 0.3um 0.3um CONTACT 2 Ohm.cm d STI DUMMY METAL M7 M6 M5 M4 M3 Si (750um) 3
4 Open-PAD 0.~0.0GHz 4
5 Z SUB Z jωc ox = jωc SUB + R SUB 5
6 !"#$ Low Frequency C ox - imagz [ ] R [ ] SUB realz SUB 6
7 !#"#$ High Frequency C SUB = ω R SUB R SUB real ( ) Z SUB 7
8 %&()*+, Insert the metal layer (thickness d ) that covers silicon substrate. This metal layer has the same conductivity as the silicon substrate. Total thickness of silicon substrate should keep the original value. w.o DUMMY Metal Measurement w.o DUMMY Metal Measurement D=50um D=60um D=70um D=80um D=90um D=50um D=60um D=70um D=80um D=90um 8
9 -. &/0 ## $%& #()$*&!" #!" +$%& %$)& 9
10 -.2um M7 0.6um 0.3um 0.3um 0.3um!"#$ % CONTACT STI DUMMY METAL,#!"-,.#!"- /$ 2 M6 M5 M4 M3 & & 0
11 3. Simulator Setup Agilent s RFDE Momentum (2005A or later) 50MHz-26.5GHz (max) RF Mode Mesh Frequency 26.5GHz 20 Cells/Wavelength 3D=ON, Thickconductor=ON, EDGE Mesh=Off Dedicated setup for DUMMY Layers 3D=OFF Thickconductor=OFF EDGE Mesh=ON
12 20um %& S-Parameters & -factor 66um!! #! 2
13 4./ ()0$(ω.()0$ +.(ω / ()$,-.((,-$,-,- ()$(*(ω(+./ (,-$(ω 3
14 -&- Ls (50MHz) Rs (50MHz) Cox(54MHz) Rsub(9.8GHz) Momentum.06 nh.23 Ohm ff 36.9 Ohm Measurement.07 nh.26 Ohm ff 28.3 Ohm 4
15 #%&5 &!! + 5
16 % 6 & 6
17 . Make the best of Electro-Magnetic (EM) simulation. Is EM simulator applicable for silicon technology? EM simulator enables accurate modeling of passive devices (Inductor and MIM capacitor ) on silicon. 2. Utilize very-accurate compact model. Looking at the EKV3.0 MOSFET Model. Accuracy of conductance. NS effects. 3. Use the Co-simulation Technique for final evaluation. Case:CMOS Amplifier Case2:CMOS VCO Case3:BiCMOS LNA 7
18 - -& W.Grabinski MOS-AK, IWCM2007 No. of Model Parameters earlyekv BSIM4v4 BSIM3v3 MMv2 BSIM3v2 HiSIM.2.0 BSIM2 HSP28 BSIM3v3 BSIM BSIM3v2 BSIM4 BSIM2 PCIM HSP28 SP BSIM3v MM9 LEVEL2 BSIM EKV3 EKV2.6 LEVEL3 EKV LEVEL Including L,W,P scaling Without scaling Years Number of DC model parameters vs. the year of the introduction of the model Most recent versions of the EKV, HiSIM, MMand SP models are included Significant growth of the parameter number that includes geometry (W/L) scaling 8
19 *&73&- W.Grabinski MOS-AK, IWCM2007 No. of Model Parameters earlyekv BSIM4v4 BSIM3v3 MMv2 BSIM3v2 HiSIM.2.0 BSIM2 HSP28 BSIM3v3 BSIM BSIM3v2 BSIM4 BSIM2 PCIM HSP28 SP BSIM3v MM9 LEVEL2 BSIM EKV3 EKV2.6 LEVEL3 EKV LEVEL Including L,W,P scaling Without scaling Years Independent mosfet model development based on the roots of the semiconductor physics and the design driven EKV modeling methodology EKV3 preserves coherent charge-based framework for static/dynamic modeling 9
20 &738!"#$ A.Bazigos, EKV3.0 model code & parameter extraction, EKV user meeting/workshop, Nov4-5,
21 &738!#"#$ A.Bazigos, EKV3.0 model code & parameter extraction, EKV user meeting/workshop, Nov4-5,
22 -738&!"$ Started from classic current transport equation I D = µ W I dψ dx s + U T d I dx Description of Ψs by using linearized I dψs = dx n C ox d dx i 2 ID formula with linearized I I D = µ W n i C ox d dx I + U T di dx 3 22
23 23 L x I D x I s = = 0-738&!#"$ -738&!#"$ 4 Inversion charge densities at source and drain Integration of (3) 5 R F id T ox id is T ox is I T I ox i D I I U C n U C n L W d U d C n L W I id is id is + + = + = µ µ 6 7 ( ) ( ) ( ) + µ = D is T ox D is R F U C n L W I 2 2 Diffusion Drift
24 2 * g ch = di dv ch = q i = 4 + i 2 = i G i G i = 4 + i + 2 0nm, 40nm, 0.6um CMOS Technologies included. 24
25 29 & Creating the segmentation of long-channel MOSFETs. General concepts can be found Take finite time for charge to travel throughout the channel. Distribution effect Memory effect 25
26 738&:;4 NMOS CGB BackGate PMOS CGB BackGate 26
27 ;-<: 3>#$%& ()*)+#,(+-)!"##$%& ()*)+#,(+-) /( /( *// // (/ (/ (/ (/ (/ 0(/ 0(/ S 0(/ 0(/ (/ (/ /( /( 0/( 0/(!.!. /( /( /( /( /( 0/( 0/( /( /( 0/( 0/(!"##$%+& ()*)+#,(+-) (/ /( /( /( Lg=2.0um Lg=0.um (6,(7*//8 (6,(7//8 49(5 (6,(7*//8 (6,(7//8 49(5!"##$%& ()*)+#,(+-)* ( 0( 0 0( 0( 0 9: 9; 9< 9( 9 0 9: 9; 2!. 9< 4%5 9( 9!. 4%5!"##$%+& ()*)+#,(+-)*3 ( db(s2) 738 & 3> #$%& ()*)+#,(+-)*3 2 *// // (/ 0(/ (/ (/ 0(/ S /( 0/(!. /( /( 0/( /( 0/( (6,(7*//8 (6,(7//8 49(5 ; - = db(s2) ( 2 9: 9; 9< 9( 9!. 4%5 Vg = 0.4 Volts, Vds=0.2,0.3,0.5,0.8,. and.4volts. 27
28 : 0 Capacitances CGB 0 Rg EKV3.0 Scaling Ratio [A.U] CFGD,CFGS CJDB,CJDS Scaling Ratio [A.U] Measured Lg [um] Lg [um] 0 00 RSUB,RSUB4 0 RSUB2,RSUB3 Scaling Ratio [A.U] 0 Measured EKV3.0 Scaling Ratio [A.U] Measured EKV Lg [um] 0 0. Lg [um] 0 28
29 . Make the best of Electro-Magnetic (EM) simulation. Is EM simulator applicable for silicon technology? EM simulator enables accurate modeling of passive devices (Inductor and MIM capacitor ) on silicon. 2. Utilize very-accurate compact model. Looking at the EKV3.0 MOSFET Model. Accuracy of conductance. NS effects. 3. Use the Co-simulation Technique for final evaluation. Case:CMOS Amplifier Case2:CMOS VCO Case3:BiCMOS LNA 29
30 = - 2 /!! $ 30
31 Reasonable match has been observed. Further need to improve S2 accuracy!
32 CMOS Power VCO #=#>? 3 5 %29:
33 ; - Transistors -EKV model- 33
34 :!*27+$ Initial simulation with Lumped L model!! Oscillation frequency differs by 0.35 GHz EM-Cosim helps predict circuit behavior with an ultimate accuracy 34
35 = ;+2!6>?$ :; -< &%- <.A 35
36 ; - B-& 36
37 3. &,! 0! +-%23 -+-%23 3 C: 37
38 Simulation Technique for RF-CMOS circuit design. Next generation of Compact Model Provides better accurate conductance and high-frequency behavior. Make the best of Electromagnetic Tools Doing more practice helps to overcome inaccuracy. Worth trying DUMMY METAL. If successful in PAD, successful in EM-Cosim, too.!+;< ; = 38
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