Progress on ASML s EUV Alpha Demo Tool

Transcription

1 Progress on ASML s EUV Alpha Demo Tool Noreen Harned 1, Peter Kuerz 3, Hans Meiling 2, Bas Mertens 5, Gregor van Baars 4 3rd International EUVL Symposium 2 November ASML, Wilton, CT; 2 ASML, Veldhoven, The Netherlands; 3 Carl Zeiss SMT,Oberkochen, Germany; 4 Philips CFT, Eindhoven, The Netherlands; 5 TNO TPD, Delft, The Netherlands / Slide 1 <file name> <version 00> <author>

2 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 2

3 EUV roadmap Process development tool Production NA Range 0.15 to to 0.25 Imaging - Dense Lines 50 nm ->40 nm 32 nm - Isolated Lines 40 nm ->30 nm 18 nm - iso/dense contacts 65 nm ->55 nm 40 nm Overlay 12 nm 6 nm Throughput 10 WPH >80 WPH Notes: CDU = 10 % Resolution Throughput is at 300mm, 16mm x 32mm, 125 shots, 5mj/cm -2 Currently building two Alpha Demo tools for process development that will go to research centers end 2005 and early Pilot production tools are likely to be in late 2008 / early 2009 but will depend on market pull and success of 193 immersion. / Slide 3

4 What a difference 12 months makes! Source power Then, 2x away from Alpha Demo power needs and no clear path to high volume manufacturing (HVM) requirements Today, Alpha Demo requirement demonstrated; 3x away from HVM needs with a path to get there! Optics Then, promising data from in-process polishing of MET optics Today, all illumo mirrors made; 3 POB mirrors done; feasibility of meeting HVM specs demonstrated; AD mirror lifetime demonstrated at synchrotron! Pellicleless reticle handling Then, basic testing on material and particles looked promising Today, zero adders demonstrated on a test bed! Alpha Demo tool Then, some vacuum testing done; some assembly of modules started Today, modules are being integrated into the baseframe! / Slide 4

5 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 5

6 Source philosophy for Alpha Demo tool Communicate source requirements and monitor source development at key suppliers Keep source - tool interface modular so that a discharge source (current baseline) or laser produced plasma can be interfaced to the tool Do fundamental investigations on plasma physics and do independent testing on key parameters including debris mitigation using 3 in-house EUV sources Make sure that efforts are extendable to source requirements for production / Slide 6

7 Why the interest in Sn for the source fuel? For EUV to be commercially viable, a minimum throughput of 80 wph is needed and 100 wph is preferred for CoO For high throughput, EUVL is photon limited, so high output sources are required Comparing Sn to Xe, there is the potential for >3x more EUV photons at the wafer plane Conversion efficiency of Sn is ~2.5-4x that of Xe Sn has a smaller pinch and thus has ~1.5x better collection efficiency But, the photons are not free Debris mitigation is a bigger problem Sn fuel handling must be optimized wavelength [nm] Most source suppliers are investigating Sn and Xe Spectral intensity [arb. units] 1.0 Xe - black line Sn - red line EUV spectra at XTREME with tin and xenon / Slide 7

8 Fast progress on system productivity (source pi collector, burst power) EUV power at IF [W] Xe Sn Achieved EUV power in Sn source (at intermediate focus) Conclusion supplier 1 supplier 2 Need >100W for >100 W/hr Need 22W for Alpha Demo tool, 10 W/hr with a π collector Sn source 1 mm CE~2% Production best result: tool source 25 W by power supplier requirement 1 and 42 within W by supplier 3x demonstrated. 2 / Slide 8

9 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 9

10 Optics fabrication is progressing All Illuminator mirrors have been fabricated Optics fabrication technol. and metrology reach alpha demo tool spec Interferometer All POB mirrors are nearing completion Precision: 38 pm! Three POB mirrors at final spec m and coated Reflectivity > 64% / Slide 10

11 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 11

12 ASML s approach for pellicleless reticle handling Objectives for EUV Reticle Handling & Particle research: Generate knowledge for particle generation and mitigation to protect reticle from particle contamination Transfer knowledge to viable solutions for litho-tool Demonstrate that we can keep the reticle free of printable defects during in-tool handling and usage / Slide 12

13 Risk assessment (1 of 2) Risks during stay on reticle stage in litho tool have been addressed: Reticle handler vacuum robot Particle-free by design, qualified by manufacturer Reticle stage: Long stroke is located outside the vacuum chamber Short stroke is a contact-less design and does not produce particles Framing blades (ReMa): Contact-less mechanism using linear leaf-spring resulting in linear motion without direct contact. Other moving components and high speed gas flows are not present in this chamber Solutions identified by design / Slide 13

14 Risk assessment (2 of 2) High risks for reticle particle contamination during reticle handling in litho tool have been addressed: Mechanical contact (hit, slide, release) contact experiments with varying set of parameters Pump-down and gas flows venting and pumping schemes & particle mitigation experiments Interface to dirty outside world solve by design Different environments with moving components (I.e. vacuum gate valves) experiments shows that gate valve actions do not add particles Solutions validated through experiments & by design / Slide 14

15 ASML Reticle handling frame & Prototype Storage Box proposed handling areas (green areas) MAX PRINTABLE FIELD (4X) 104 x 132 (26 x 33 AT WAFER) Robot arm with RH frame Alpha Demo Storage Box / Slide 15

16 Frame, loadloack and box for RH have been optimized and proto HW is being built based on FuMo results added particles per cycle (#/reticle) Improved proces control Test set-up FuMo Improved process control scan area: 7 cm 2 particle size: 100 nm scanned area scaled up to full reticle size 10 cycles per experiment 0 Conclusion July added 2003 defects are routinely experiment achieved number in reticle handling (FuMo April setup) 2004 / Slide 16

17 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 17

18 Layout of the Alpha Demo tool service corridor reticle stage sourcecollector module baseframe reticle handler servo, vacuum, water, electronics cabinets wafer stage wafer handler / Slide 18

19 Factory ASSY AD-1: BF, airmounts, MF assy Qualification Base Frame 1.0E E E E+00 Pressure [mbar] 1.0E E E E E E E Time [hours] Results: H 2 O outgas-rate (10h) : mbar l/s (spec: mbar l/s) CxHy outgas-rate (10h) : mbar l/s (spec: mbar l/s) / Slide 19

20 System vacuum performance: BF, airmounts, MF, LS, AA, IFM, ZS Base ASML-4 1.0E E+02 (10-Aug- 04) 1.0E E+00 Pressure[mbar] 1.0E E E-03 Driver: optics lifetime! 1.0E E E E-07 Results: Conclusion Time[hours] H 2 O pressure: 4.5x10-7 mbar (specification: 6.1x10-7 mbar) vacuum specifications of AD tool in current state are comfortably met CxHy pressure: 2.8x10-9 mbar (specification: 5.2x10-9 mbar) / Slide 20

21 Wafer Handler Status - assembled - vacuum and temperature qualified - takeover testing finished (reproducibility, reliability) - handler ready for integration / Slide 21

22 nr of waferloads 1/4/2004 2/4/2004 3/8/2004 3/9/2004 3/22/2004 5/5/2004 5/9/2004 5/11/2004 5/11/2004 5/13/2004 6/1/2004 6/1/2004 6/1/2004 6/3/2004 6/7/2004 6/9/2004 6/15/2004 6/21/2004 6/23/2004 6/28/2004 7/5/2004 7/6/2004 7/6/2004 7/12/2004 7/15/2004 7/28/2004 8/31/ Wafer Flow: reliability of wafer exchange Type of error: 1: PA-LR take-over error 2: (U)LL pumpdown sequence error 3: Wafer Present error more than 20,000 wafers cycled (>17k through Proto) all errors recovered by WH initialise (no mechanical failures!) / Slide 22 WH Proto WH Fumo /3/ /10/2003

23 Reticle Handler: proto & gripper RH gripper with dummy reticle pressure (mbar) 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 Pumpdown Robot specification: H2O = 1e-7 mbar p total AMU 18 1E time (hrs) Movement [um] / [urad] 60,00 40,00 20,00 0,00-20,00-40,00-60,00-80,00-100, sep2003a reticle takeover gripper - clamp (relative) reticle loose in frame vacuum Measurement number X [um] Y [um] Rz [urad] specification: x,y:15 µm Rz:150 µrad / Slide 23

24 Reticle stage MSD MAVG / Slide 24

25 Wafer stage MSD MAVG / Slide 25

26 Presentation Agenda EUV where are we going Key technology challenges source optics pellicleless reticle handling Progress on the first Alpha Demo tool Summary / Slide 26

27 Summary (I) Realization of the exposure tool Key technology areas ASML is working all to support commercialization: Source (power, collector lifetime): AD source power is demonstrated production tool power requirement within 3x demonstrated, Sn mitigation solutions being validated. Optics (fabrication, lifetime): AD fabrication technology & lifetime (at synchrotron) demonstrated production tool figure polishing specifications being approached on AD mirrors, and required flare level demonstrated on MET mirror. Lifetime solutions identified and being validated. Defect-free mask handling Zero added particles during reticle handling on FuMo demonstrated. Vacuum technology (frames, stages, handlers): Baseframe + metroframe vacuum qualified, stages meet performance in air set ups, material cycling using handler FuMos: specs are demonstrated Realization of our pre-production Alpha Demo tool is well under way, with key functionality being demonstrated and integration ongoing / Slide 27

28 Summary (II) Infrastructure for commercialization Key infrastructure areas Industry & ISMT are working to support commercialization: Mask Blanks (yield, defectivity): mask blanks with 0.3 defects/cm 2 (average) & 0.05 defects/cm2 (best) demonstrated; best meets spec for AD tool defects/cm 2 production tool spec for to yield 3 out of 4 defect free masks is still a challenge Resist (LER, sensitivity, resolution): new resists have been developed with improved sensitivity, higher resolution, and lower LER. performance is not limited by shot noise < 40nm has been demonstrated satisfying all three spec s simultaneously is still a challenge Multiple (>4) small field exposure tools are being brought to operation this year, to further the world-wide development of both resist and defect-free imaging. / Slide 28

29 Acknowledgement Thanks to a great team effort at ASML Zeiss TNO TPD Philips PTB-BESSY FOM-Rijnhuizen Rohm & Haas International SEMATECH DARPA the VNL and many others with support from national governments, MEDEA+ and European Commission / Slide 29