EUREKA: A new Industry EUV Research Center at LBNL
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1 EUREKA: A new Industry EUV Research Center at LBNL Patrick Naulleau Center for X-ray Optics Lawrence Berkeley National Laboratory Berkeley Lab MSD Materials Sciences Division 1
2 Operating model Core operational and infrastructure funding to build and preserve facilities provided by Core Members Differential funding for expanded operations and non-core upgrades provided by Supplier Members Berkeley Lab MSD Materials Sciences Division 2
3 Status Master agreement with Founding Core Members signed mid September Title to SEMATECH EUV assets in Berkeley transferred to LBNL on 9/25 Multiple supplier members now in signing process Discussions underway with numerous other suppliers in resist, tool, and mask space Berkeley Lab MSD Materials Sciences Division 3
4 Cornerstone tools 0.3-NA Litho Reflectometer/ Scatterometer 13-nm in non-car EUV AIMS up to 0.6 NA 0.5-NA Litho coming soon Berkeley Lab MSD Materials Sciences Division
5 CXRO Calibrations and Standards Beamline Specifications Wavelength precision: 0.007% Wavelength accuracy: 0.013% Reflectance precision: 0.08% Reflectance accuracy: 0.08% Spectral purity: 99.98% Dynamic range: Berkeley Lab MSD Materials Sciences Division
6 Reflectance High accuracy measurements of optical constants of EUV resist and mask materials PMMA ( =13.5 nm) =0.0242, = E-3 1E-4 1E-5 d = nm Angle (deg) Berkeley Lab MSD Materials Sciences Division
7 EUV 0.3-NA MET 13 nm Berkeley Lab MSD Materials Sciences Division
8 Cumulative wafers MET: engine for materials learning Cumulative materials Berkeley Lab MSD Materials Sciences Division
9 13-nm patterning achieved in non-ca resist 60 mj/cm 2 LWR = 3.1 nm Berkeley Lab MSD Materials Sciences Division 9
10 NA = 0.5 Magnification = 5x Resolution limit = 8 nm Programmable pupil fill Mask angle of incidence = 6 Integrated wavefront metrology Robotic linked track Berkeley Lab MSD Materials Sciences Division 10
11 Reticle stage assembly Projection optics box Tool core metrology frame Wafer stage assembly Berkeley Lab MSD Materials Sciences Division 11
12 7-axis reticle stage Spec Measured XY Low freq. (<2Hz) PV 3 nm 0.92 nm XY High freq. (>0.5Hz) RMS Z Low freq. (<2Hz) PV Z High freq. (>0.5Hz) RMS 2 nm 0.33 nm 10 nm 1.7 nm 3 nm 0.61 nm Berkeley Lab MSD Materials Sciences Division 12
13 5-axis wafer stage/ 2-axis LSI carriage Spec Measured XY Low freq. (<2Hz) PV 3 nm 0.51 nm XY High freq. (>0.5Hz) RMS Tip/Tilt RMS Z Low freq. (<2Hz) PV Z High freq. (>0.5Hz) RMS 1 nm 0.65 nm 18 mrad 0.15 mrad 10 nm 1.5 nm 3 nm 0.42 nm Berkeley Lab MSD Materials Sciences Division 13
14 Berkeley Lab MSD Materials Sciences Division 14
15 Individual mirrors better than spec M1 Range Specification Result Figure CA 3mm < 0.1nm rms 0.04 nm rms Flare 3mm 0.43um < 0.17nm rms 0.12 nm rms HSFR 1um 10nm < 0.15nm rms 0.08 nm rms M2 Range Specification Result Figure CA 8mm < 0.1nm rms 0.08 nm rms Flare 8mm 1.2um < 0.17nm rms 0.14 nm rms HSFR 1um 10nm < 0.15nm rms 0.09 nm rms Predicted Berkeley Lab MSD Materials POB Sciences Division EUV flare = 2.86%
16 System wavefront 2x better than spec Reticle field point (um) 30cycles across aperture (nm rms) 0, (spec=0.5) 75, (spec=1.0) 75, (spec=1.0) -75, (spec=1.0) -75, (spec=1.0) Berkeley Lab MSD Materials Sciences Division 16
17 Platform integration nearly complete Berkeley Lab MSD Materials Sciences Division
18 Other relevant assets for EUREKA Members at LBNL Berkeley Lab MSD Materials Sciences Division 18
19 Count Count Instrumentation for direct characterization of EUV radiation chemistry Nebulized polymeric resist condenses to particles EUV E e- = 92eV- Binding E Photo-electron imaging for energy and count Electron Energy Inorganic nanoparticle resists coated in-situ with resist materials Molecular resist Fragment Mass Mass spectroscopy for molecular reactions 1: Introduce materials as molecular or nanoparticle beam 2: Irradiate with EUV or electrons 3: Measurement of electrons and chemistry Berkeley Lab MSD Materials Sciences Division
20 Height (nm) Height (nm) Counts (arb) RSoXS: soft-x-ray potential for 3D chemically sensitive profile metrology Soft X-ray CD-SAXS Results for 1:1 Sample CD-RSoXS on Polymer Lithography Grating Preliminary Fitting MSE of Division Soft X-ray Data Hard vs. Soft 1 2 Hard X-ray Soft X-ray Hard X-ray Hard X-ray_n3 Soft X-ray_n3 Hard X-ray_n4 Soft X-ray_n4 Hard X-ray_n5 Soft X-ray_n5 n= Soft X-ray PMMA n=5 n= Berkeley Lab MSD Materials Sciences Division Width (nm) Scattering intensity and number of peaks increased substantially with RSoXS q x -q z plot result of reconstruction from >400 images Data up to 10 th order diffraction peak q z (Å -1 ) Compares Fits to soft favorably x-ray data to hard within X-ray uncertainty and provides of hard benefit x-ray data of chemical Supportive sensitivity to idea of for asymmetric potential use edge in latent profileimages Additional data considerably reduces fit uncertainty Width (nm) Sunday et al. JM3 12 (3), 2013,
21 Realtime in liquid AFM for development studies Encased cantilever for fast response in liquid Start of developer injection Berkeley Lab MSD Materials Sciences Division 21
22 Nano-Auger for Surface Elemental Analysis Chemical Analysis with sub-50 nm resolution on SEM-type samples Mapping S and Mo in single monolayer CVD MoS 2 islands showing S deficit at grain boundaries In-situ analysis of SiAu alloys above and below the Eutectic point Auger Berkeley Lab MSD Materials Sciences Division 22 REELS
23 Berkeley Lab MSD Materials Sciences Division
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