Design Study. Carl Zeiss Microelectronic Systems GmbH Enabling the Nano-Age World

Transcription

1 Carl Zeiss Microelectronic Systems GmbH Enabling the Nano-Age World,AIMS EUV Development Design Study Karl-Heinz Bechstein, Mathias Esselbach, Wolfgang Harnisch, Norbert Rosenkranz, Thomas Scherübl, Holger Seitz, Roman Windpassinger, Axel Zibold Peter Kuerz*, Erik Sohmen* *Carl Zeiss SMT AG Litho Division : AIMS is a trademark of Carl Zeiss A Company of Carl Zeiss SMT AG: Enabling the Nano-Age World TM

2 AIMS TM = Aerial Image Measurement System What is is AIMS TM TM? 4An actinic actinicoptical technique to to emulate any any given given stepper or or scanner. What is is AIMS TM TM good for? for? 4 Actinic optical optical printability analysis of of reticle reticle defects, repairs repairs and and critical critical areas areas on on all all kinds kinds of of reticles without the the need need of of stepper prints. prints. AIMS TM TM Applications 4Mask development 4Defect review reviewand disposition 4Repair verification 4Mask quality quality analysis

3 Comparison Stepper vs. AIMS TM Stepper / Scanner AIMS TM EUV Large FOV Mask Small FOV σ * NA NA = 0,0625 σ * NA NA = 0,0625 LS Illumination System Wafer Imaging system M = 0,25 NA = 0,25 LS Illumination System Camera Imaging system M= NA = 0,000125

4 AIMS TM EUV design study AIMS TM EUV lite Collector Reticle: face-down Illumination system First Magnification EUV 5x Optics from Carl Zeiss SMT EUV Source Photocathode at intermediate image: EUV electrons CCD Second Magnification: Photo Electron Emission Microscope (PEEM) Magnification: 200x Resolution < 150nm

5 AIMS TM EUV lite: Key specifications Optics EUV Optics: 5x modified MET 2nd magnification: PEEM 200x variable Total magnification: 50x 1000x NA, fixed: Sigma: σ outer = , σ inner = 0.2 Source: Plasma Discharge Reticle stage Face down Option: Interferometer stage Carl Zeiss AIMS measurement and analysis software Recipe operation, up-date of inspection files Connectivity: link to all major inspection tools

6 AIMS EUV design study: AIMS TM performance Differences to current EUV Scanner Design Chief ray angle (CRA) Bandwidth AIMS-EUV lite 7.5 due to modified MET 3.5% due to 2 mirror optics Scanner α-tool 6 2% Impact Impact on on AIMS AIMS TM TM performance? 4Detection sensitivity of of nano-particles in in mask mask blanks? 4CD 4CD variation due due to to different CRA? CRA? SimulateAIMS TM TM EUV EUV performance for for different CRA CRA and and bandwidths

7 Simulation* results CD = CD AIMS EUV (7.5, 3.5%) - CD Stepper (6, 2%) CD (%) = 0 nm = 140 nm = 250 nm = 400 nm absorber (Cr) capping layer MoSi double layers Threshold Substrate (Si) CD < 3% at threshold > 0.2 Simulation Model Defect: h= 20nm, FWHM = 21nm Carl Carl Zeiss Zeiss AIMS AIMS TM TM EUV EUV lite litewith CRA CRA = and and 3.5% 3.5% bandwidth 4No No impact impact on on sensitivity sensitivity for for particle particle detection detection in in EUV EUV multilayers multilayersand and blanks blanks 4Systematic CD CD difference difference of of 3 % compensation compensation by by calibration calibration * Simulations made by P. Evanschitzky / A. Erdmann at Fraunhofer IISB Erlangen / Germany

8 Zeiss AIMSEUV lite lite 4All 4All key key components are are state-of-the art, art, available and and tested tested 4Short lead lead time time and and price price attractive tool tool 4Blank and and patterned EUV EUV mask mask development and and qualification 4Fits requirements for for and and nm nm node node