EUV-Technology with Discharge EUV-Lamp"
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1 EUV-Technology with Discharge EUV-Lamp" Rainer Lebert, Larissa Juschkin, Christian Wies, Bernhard Jägle, Manfred Meisen, Ulrich Bieberle, Willi Neff, Juri Barthel, Konstantin Walter, Klaus Bergmann, Fraunhofer Institut für Lasertechnik EUV Lamp Head: 2 J electrical input per pulse,5 mj/sr/2% bw. EUV emission <= 5 µm FWHM diameter Permanent operation 4w/7d/24h Expected MTBF 4*1 7 Pulses, i.e. > 2. hours, i.e. 2 MJ inband radiation Flexible head orientation. spectral characteristics from narrow to quasi-cw available all gaseous targets can be used environmentally sealed
2 EUV-Lamp System 5, 1, 25 Hz reprate 15, 3, 75 mw/inband/2π sr CE certificate User-friendly control Remote maintenance interface (Telephone line) At site installation and training Debris free with Zr-window separation between source and application (window foil between lamp and application) Manual controlled, low-cost systems for university research and OEM lamp heads are available
3 Integrated in EUV-Exposer EUV- Lamp EUVwindow Multilayer mirror as spectral filter and debris stop Open frame Resits Exposer filters Lamp-emission to nearly EUV-Inband (UV<,1%; VUV< 1%; EUV out 1%) Used for resist development, e.g. dose-contrast... 5 nm lines and spaces have been printed with free-standing contact mask insert.
4 Scattering Pinhole image of source with scatter Close-up shaddowgraph of window foil shows scatter at edges Scattering is detected with one single pulse from EUV source
5 Thickness Measurements on Nanolayers CCD reflectivity EUV-Lamp shutter collimator slit sample entrance slit diffraction grating measurement SiO 2 8nm SiO 2 on Si 6nm SiO 2 on Si 4nm SiO 2 on Si 3.4nm SiO 2 on Si 2nm SiO 2 on Si Si θ 2θ set-up: spectrometry: sample: layer thickness, vertical surface roughness broadband xenon spectrum wafer, Si with SiO 2 layer (oxidized at air) data acquisition source and reflection spectra simultaneously for θ < 1.5 source and reflection spectra in separated pulses for θ > 1.5 data processing: C++ software solution (as in transmission) wavelength [nm] comparison to reference data (CXRO) fit of layer thickness roughness influence not measured measured layer thickness: (3.4±.5) nm Scattering from samples is detected by geometrical change of illumination spot on CCD
6 For EUV-Reflectometer for Mask Blanks EUV-Lamp is used for reflectometry on mask blanks Zirconium window EUV-Lamp EUV-Lamp CCD-camera Mask blank vessel Illumination and spectrograph Laboratory test stand for proof of principle Conceptual of drawing of mask blank reflectometer device. Comissioning will start in October 23
7 For Calibration of EUV-Metrology Sensitivity / A / W Sensitivitiy of the E-Mon (without Zr-filter) JOMT PTB Wavelength / nm Transmission / % 14 Transmission Zr / Si 3 N 4 / Zr JOMT 12 PTB Wavelength / nm Transmission measurements: with EUV-Lamp resemble data from PTB with errors of less than 2 %. Used at JENOPTIK Mikrotechnik for internal calibration
8 EUV-Lamp shutter Transmission measurements: set-up Thin Film Metrology entrance slit sample diffraction grating Data acquisition: emission and transmission simultaneous on CCD, single pulse exposure with EUV-Lamp (< 1 ns) Data processing: wavelength calibration, background subtraction, calculation of transmission, absorption, thickness, chemical shift intensity [cts/pulse] source emission sample transmission (Si 3 N 4 ) background σ abs [barn] 1.6x x x1 7 1.x1 7 8.x1 6 Si 3 N 4 2nm 1 6.x wavelength [nm] Transmission measurements: results 4.x photon energy [ev] Absorption cross section compared to reference data (CXRO)
9 Extentable to Water-Window for X-ray Microscopy CCD Image of PHG th order 8 2 radius wavelength INTENSITY [ normalized ] INTENSITY [ cts/pix ] RADIUS [ µm ] WAVELENGTH [ nm ] Water window radiation mainly by Ar X and Ar XI can be generated by minor changes with the EUV-Lamp
10 Application and Progress Report on a commercial EUV-Lamp Rainer Lebert, Bernhard Jägle, Christian Wies, Larissa Juschkin, AIXUV GmbH, Steinbachstrasse 15, 5274 Aachen, Germany EUV-Lamp system is used for applications, increasingly characterized in joint work on EUV-source metrology with JENOPTIK Mikrotechnik and further developed. Core results in the last year are: EUV Lamp has been tested for 25.. pulses, i.e. > 13 hours of operation and > 1.5 MJ of inband EUV emitted. Part of it has been accomplished in a 2 week permanent operation period. Resist exposer shipped to customer and has being used for more than 15 exposures up to now (no lamp failure) EUV reflectometer based on EUV-Lamp demonstrated potential for immanent wavelength calibration and reproducible reflectometry. Emission in x-ray, XUV, EUV, VUV, DUV and UV has been characterized both by a newly developed spectrograph as well as spatially resolved with filtered pinhole images. Variation of spectral emission characteristics and the extendibility of the source concept to the water window has been demonstrated by Fraunhofer- Institute for laser techniques. 1mm 1 nm 13,5 nm Spatial - spectral resolved emission characteristics of EUV-lamp * see presentations from JENOPTIK Mikrotechnik on source metrology
11 Basic features of EUV-Lamp System easy to set-up and operate compact and efficient design user-friendly control long term stability environmentally sealed / ruggedized head no debris (window foil between lamp and application) no special alignment spatial and temporal stability all gaseous targets can be used spectral characteristics from narrow to quasi-cw available
12 Features of EUV-Lamp: 2 J electrical input per pulse > 4 µj/sr/2% bw. EUV emission <= 5 µm FWHM diameter 5, 1, 25 Hz reprate Permanent operation 4/7/24 Expected MTBF > 3.. Pulses, i.e. > 1.5 hours, 2 MJ inband radiation generated. Remote maintenance interface (Telephone line) Flexible head orientation Manual controlled, low-cost systems for university research and OEM lamp heads are available.
13 Typical Xenon EUV Emission 11,5 12,5 13, Wavelength (nm) UV-spectrum AIXUV s EUV-Lamp emits typical Xenon spectrum but can also be operated with all other gases.
14 Extentable to Water-Window for X-ray Microscopy CCD Image of PHG th order radius 8 2 wavelength INTENSITY [ normalized ] INTENSITY [ cts/pix ] RADIUS [ µm ] WAVELENGTH [ nm ] Water window radiation mainly by Ar X and Ar XI can be generated by minor changes with the EUV-Lamp
15 Flexible Spectrum Change by Use of Different Gases SPECTRAL YIELD µj/(sr [ nm pulse) ] SPECTRAL YIELD µj/(sr [ nm pulse) ] Ne VII Ne VI Ne V Ne IV Neon O VI O V 19 µj/(4π sr) 168 µj/(4π sr) WAVELENGTH [ nm ] 2 µj/(4π sr) Oxygen 55 µj/(4π sr) AREA (TOTAL) : 2.3 mj/(4π sr) WAVELENGTH [ nm ] AREA (TOTAL) : 548 µj/(4π sr) 94 µj/(4π sr) SPECTRAL YIELD µj/(sr [ nm pulse) ] SPECTRAL YIELD µj/(sr [ nm pulse) ] FVII FVI FV Ar VIII Ar VII 146 µj/(4π sr) 47 µj/(4π sr) 1 µj/(4π sr) Fluorine 36 µj/(4π sr) WAVELENGTH [ nm ] AREA (TOTAL) : 37 µj/(4π sr) µj/(4π sr) Argon 6 µj/(4π sr) WAVELENGTH [ nm ] AREA (TOTAL) : 6.14 mj/(4π sr) FIV
16 High Spatial Stability Long time source size identical to single pulse size Pulse to pulse jitter of center of gravity < 1 µm 4 µm Source position, diameter and yield are highly reproducible. Pulse to pulse fluctuations are < 2 µm in spatial position and diameter and < 5 % in yield (RMS). Extensive metrological data on EUV-Lamp are available*
17 Integrated in EUV-Exposer EUV- Lamp EUVwindow Open frame Resits Exposer filters Lampemission to nearly EUV-Inband (UV <1%; VUV < 1%; EUV out 1%) Used for resist development, e.g. dose-contrast... About 15 wafers have been exposed since 1/3. No source failure, beamline window still intactt,, Decrease throughput < 3%. 5 nm lines and spaces have been printed with free-standing contact mask insert.
18 For EUV-Reflectometer for Mask Blanks Zirconium window EUV-Lamp CCD-camera Mask blank vessel Illumination and spectrograph Laboratory test stand for proof of principle Measured reflectivity based on PTB calibrated broadband mirror (FhG-IOF) compared to calculated curve (CXRO) Conceptual of drawing of mask blank reflectometer device. Comissioning will start in October 23
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