Effects of Chrome Pattern Characteristics on Image Placement due to the Thermomechanical Distortion of Optical Reticles During Exposure
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1 Effects of Chrome Pattern Characteristics on Image Placement due to the Thermomechanical Distortion of Optical Reticles During Exposure A. Abdo, ab L. Capodieci, a I. Lalovic, a and R. Engelstad b a Advanced Micro Devices, One AMD Place, Sunnyvale, California b Computational Mechanics Center, University of Wisconsin 1513 University Ave., Madison, Wisconsin SRC Program Review Slide 1
2 Motivation for the Research The illumination of optical reticles during exposure is a source of reticle heating. Thermal distortions induced during the exposure process represent a significant portion of the pattern placement budget for advanced masks. Pattern absorption of the exposure light during exposure is the main source of reticle heating. Three dimensional thermal and mechanical finite element (FE) models were developed to simulate the thermal and the structural response of the reticles during exposure. SRC Program Review Slide 2
3 Optical Lithography Exposure Schematic of Thermal Modeling Some of the incident light hitting the chrome layer will be reflected and the remaining is absorbed, which will apply a heat flux on the bottom surface of the reticle. The thermal model included : Convection to the ambient air Radiation to the surroundings Conduction to the mounting. Heat is generated in the glass thickness because of the glass absorptivity to the illumination energy. SRC Program Review Slide 3 The model accounted for the pellicle by considering equivalent coefficients for radiation and convection.
4 Exposure Parameters Property Units Fused Silica (193-nm) Modified Fused Silica (157-nm) ~20 mm 125 mm ~101 mm Scanning Direction Thermal conductivity W/m-K Density kg/m Specific heat J/kg-K ~128 mm Young s modulus GPa ~129 mm Poisson s ratio Thermal expansion PPM/K Attenuation coeff. 1/cm base Reticle Units Value Top emissivity Bottom emissivity Top heat transfer coefficient W/m 2 -K 15 Bottom heat transfer coefficient W/m 2 -K 4.0 Boundary Conditions - Fixed edges. - Adiabatic. Property 193-nm 157-nm Chrome reflectivity (%) ~100 mm Mount Pellicle ~ 60% Chrome 44 mm 64 mm Die Frame SRC Program Review Slide 4
5 Simulating the Pattern Layout cm Global thermal models are used for simulating the reticle heating during exposure. 125 nm 4 = 0.5 µm Local thermal models are used for simulating the local thermal effects during reticle patterning. 1 µm 5 mm Microprocessor Chip Gate Pattern The chrome pattern is averaged 0.5 on a grid that allows assessing 0.4 the effect of the pattern without using unrealistically large model. 0.6 SRC Program Review Slide 5
6 Equivalent Modeling of Microprocessor Chip Gate Layer Fine-Mesh Model 250 µm 250 µm Resolution (64 44 density matrix) Coarse-Mesh Model 1000 µm 1000 µm Resolution (16 11 density matrix) Die Frame Half-Symmetry Model Full Model Two sets of FE models (thermal and structural) are developed: a fine-mesh model that contains pattern details and a coarse-mesh model that has equivalent pattern densities. SRC Program Review Slide 6
7 FE Simulation Results Thermal Response 90-nm Production Tool 20 mj/cm 2 Fine-Mesh Model Coarse-Mesh Model Max T: K Max T: K The simulation results showed that the max. temperature rise is nearly identical and the contour lines look very much alike for both models. The temperature contours for the coarse-meshed model (the full model) was very symmetrical, i.e., the use of a half-symmetry model was a good assumption. SRC Program Review Slide 7
8 FE Simulation Results Thermomechanical Response 90-nm Production Tool 20 mj/cm 2 Fine-Mesh Model Reticle OPD Reticle Out-of-Plane- Distortion (OPD) Coarse-Mesh Model Patterned Area Inplane-Distortion (IPD) C1 C2 C3 Max OPD 20.9 nm B1 B2 B3 C1 Patterned Area IPD C2 C3 A1 A2 Max IPD 28.5 nm A3 Max OPD 20.1 nm C2 B1 A1 B2 A2 Max IPD 28.7 nm B3 A3 Y-Dir Comp. Mask-level distortions (nm) X-Dir Comp. IPD vector Fine Coarse X 0.34 Y Z X 0.28 Y Z SRC Program Review Slide 8
9 Effect of Chrome Pattern 90-nm Production Tool 20 mj/cm 2 Fine-Mesh Model Coarse-Mesh Model Uniform Coverage Fine Pattern Coarse Pattern Max T: K Extracted Density Coarse Pattern Max T: K Average Density (lines or crosses) % Max T: K Distortion Results (nm) A1 A2 A3 B1 B2 B3 C1 C2 C3 X Fine Y Z X Coarse Y Z X Uniform Y Z SRC Program Review Slide 9 Uniform Coverage
10 Maximum Temperature Rise (K) Chrome Pattern Characteristics Chrome Pattern Reflectivity Chrome Reflectivity (%) Max. IPD in the Patterned Area (nm) Chrome Coverage Chrome Coverage (%) Only chrome reflectivity or percent coverage is changed and all other parameters are constant Max. Reticle Temperature Rise (K) As the reflectivity increases (or similarly the chrome coverage decreases), the energy absorbed by the chrome pattern decreases which lowers the maximum temperature in the reticle. Uniform chrome coverage on the entire exposure area (i.e., no frame). The assumed heat flux is mw/cm 2 (for 157-nm technology). SRC Program Review Slide 10
11 Effect of Reticle Mount Case 0: Mounted Along Two Vertical Strips 1 The reticle was mounted on the patterned side, along the two vertical strips. All nodes in these mounting strips (shaded below) are constrained from translations in the three directions Max OPD: 19.9 nm 1 1 Max Uncorrected IPD: nm SRC Program Review Slide 11 Max IPD: 15.3 nm (before 4 ) Isotropic Mag Correction Max IPD: 4.47 nm (before 4 ) Orthotropic Mag Correction
12 Effect of Reticle Mount Case 1: Mounted with Four Central Pads 1 The reticle was mounted on the pattern side, in the four symmetric regions shown below. All nodes in the shaded regions are constrained from translations in the three directions Max OPD: 31.0 nm 1 1 Max Uncorrected IPD: nm /2 SRC Program Review Slide 12 Max IPD: 9.35 nm (before 4 ) Isotropic Mag Correction Max IPD: 3.44 nm (before 4 ) Orthotropic Mag Correction
13 Effect of Reticle Mount Case 2: Mounted with Four Rectangular Pads 1 The reticle was mounted on the pattern side, on the four symmetric rectangles. All nodes in these rectangles (shaded below) are constrained from translations in the three directions. Max OPD: 24.5 nm Max Uncorrected IPD: nm SRC Program Review Slide 13 Max IPD: nm (before 4 ) Isotropic Mag Correction Max IPD: 4.18 nm (before 4 ) Orthotropic Mag Correction
14 Effect of Reticle Mount Case 3: Mounted with Four Corner Pads 1 The reticle was mounted on the pattern side, on four square corner pads. All nodes in these squares (shaded below) are constrained from translations in the three directions. Max OPD: 33.5 nm Max Uncorrected IPD: nm SRC Program Review Slide 14 Max IPD: 4.32 nm (before 4 ) Isotropic Mag Correction Max IPD: 3.33 nm (before 4 ) Orthotropic Mag Correction
15 Effect of Reticle Mount Case 4: Mounted with Long Rectangular Pads 1 The reticle was mounted on the pattern side, on the four symmetric rectangles. All nodes in these rectangles (shaded below) are constrained from translations in the three directions. Max OPD: 25.6 nm Max Uncorrected IPD: nm SRC Program Review Slide 15 Max IPD: nm (before 4 ) Isotropic Mag Correction Max IPD: 3.91 nm (before 4 ) Orthotropic Mag Correction
16 Effect of Reticle Mount Summary The distortion field from Case 3 is most readily corrected. However, the low level of constraining action will result in defocus problems from large OPD. In addition, the constraints may not be suitable for resisting high accelerations during exposure. Distortion Results (nm) Case 0 Case 1 Case 2 Case 3 Case 4 OPD IPD Isotropic Mag Orthotropic Mag Base Case (Case 0) Case 1 Case 2 Case 3 Case 4 SRC Program Review Slide 16
17 Effect of Stepper and Exposure Conditions 193-nm Technology 157-nm Technology Exposure Tool Production (90-nm) Hi NA Tool (65-nm) Pre-production Production Tool Laser Max Power (W) Resist Sensitivity (mj/cm 2 ) Power on Reticle (mw/cm 2 ) Scanning Speed on Wafer (mm/s) Throughput (WPH) Delay Time between Fields (s) 0.15 Wafer Replacement Time (s) 5 Maximum Temperature Rise (K) Maximum OPD* (nm) Maximum Pattern IPD* (nm) / Mask Maximum Pattern IPD* (nm) / Wafer Max. IPD w/ Isotropic Mag. (nm) Max. IPD w/ Orthotropic Mag. (nm) *Base Case mount was used. SRC Program Review Slide 17
18 Summary and Conclusions Optical lithography reticles distort as a result of the thermal loading due to radiation during the exposure process. This thermal distortion can cause significant image placement errors on the device wafer. FE models were used to simulate the thermal and structural response of these reticles during exposure. The results showed that the maximum temperature rise and the maximum thermal IPD were both proportional to the amount of chrome coverage (or reflectivity). As the chrome coverage increase, so does the maximum temperature and IPD. Various reticle mounts were investigated. FE results illustrated that the least severely constrained design produced the most correctable IPD. However, this type of mount is not compatible with the exposure tool conditions (i.e., high stage accelerations, etc.). The effect of exposure tool parameters on the thermomechanical response of reticles for 193-nm and 157-nm technologies were compared. For high-power production tools, image placement errors could be significant without orthotropic magnification correction. SRC Program Review Slide 18
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