Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG
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1 Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG
2 TEMPORARY BONDING / DEBONDING AS THIN WAFER HANDLING SOLUTION FOR 3DIC & INTERPOSERS Device Manufacturing TSV Processing Temp Bonding Thinning Post Processing Temp Debonding Stacking C2C C2W W2W Thin Wafer Handling 2
3 STATUS OF TEMPORARY BONDING/DEBONDING PROCESSES AND MATERIALS Initial R&D Line R&D (Integration) Volume Ramp-up HVM Industry Feasibility Yield (Cost) Improvement 3
4 OUTLINE Introduction: Room Temperature Debonding Material/Process Optimization & Survey Conclusions & Roadmap 4
5 INDUSTRY TREND TOWARDS ROOM TEMPERATURE DEBONDING ROOM TEMPERATURE DEBONDING DEBOND METHOD / MATERIAL SOLVENT RELEASE THERMAL SLIDE SOLID STATE LASER RELEASE MECHANICAL EXCIMER LASER ASSISTED SIMPLE CARRIER LOW COO NO THERMAL STRESSES NO CARBONIZATION HIGH THROUGHPUT CAPABLE SUSS FOCUS 5
6 GENERAL MECHANICAL ROOM TEMPERATURE DEBOND PROCESS Temporary Bond Carrier Wafer Add & Prepare Release or Zoned Layer(s) Flip Wafer Bond Debond Device Wafer Spin Coat & Prepare Adhesive(s) Thinned Device Wafer Flip Wafer Carrier Wafer Attach to Dicing Frame (optional edge cut / for ZoneBond ) Mechanical Debond at Room Temperature Clean Device Wafer 6
7 EXCIMER LASER ASSISTED ROOM TEMPERATURE DEBONDING Laser beam Excimer laser debonding mechanism XeCl or KrF 308 / 248 nm Nanosecond laser pulses break bonds of polymer materials and create gaseous state Fast expansion of gas cuts material open Glas Carrier Adhesive Device Wafer Absorption in thin special layer Absorption layer Advantages w.r.t to Solid State Laser No carbonization / thermal stresses Flat top beam profile / 10x better stability no excess energy in substrate No laser energy near device Laser light absorbed in nm layer Glas Carrier Adhesive Device Wafer Absorption in first nm of adhesive Allows unobscured visible light inspection Adhesive only has to absorb in UV (308/248 nm) Works on a range of existing adhesives Glas carrier and wafer separated 7
8 GENERAL LASER ASSISTED ROOM TEMPERATURE DEBOND PROCESS Temporary Bond Carrier Wafer ( ) Optional Add & Prepare Release ABSORPTION or Zoned LAYER Layer(s) Flip Wafer Bond Debond Device Wafer Spin Coat & Prepare Adhesive(s) Thinned Device Wafer Flip Wafer Carrier Wafer Attach to Dicing Frame Excimer Laser Treatment (308nm) Mechanical Debond / (adjustable lift of force down to zero) at Room Temperature Clean Device Wafer 8
9 OUTLINE Introduction: Room Temperature Debonding Material/Process Optimization & Survey Conclusions & Roadmap 9
10 GENERAL ADHESIVE REQUIREMENTS FOR TEMPORARY BONDING/DEBONDING Vacuum process compatibility Temperature stability 250C (better 350C) Chemical compatibility Easy to de-bond (no thermal stress) Easy to clean (no chemical stress) Possibility to re-use / recycle carriers Total Thickness Variation before and after grinding Application Thinning / TSV exposure Chip stacking / Interposer Type of Topography Embedded in Adhesive Adhesive Thickness Today s Si TTV Requirements Pad / RDL 20µm 2µm Cu Nail / Micro Bump (10-40µm) 20-70µm 4µm Interposer C4 bump (70-80µm) 100µm 5-7µm Device Manufacturing TSV Processing Temp Bonding Stacking Thinning Post Processing Temp Debonding C2C C2W W2W 10
11 TEMP. BONDING/DEBONDING PROCESS SURVEY Production Readiness Cost of Ownership Performance 1 :: Qualified /used for for high volume manufacturing 2: 2: Integration tests in in line at at institute 3: 3: Qualified by by SUSS internal tests Equipment cost Process times & cycles Other consumables: e.g. Cost of of Tape (Cost of of materials) Process latitude (Survivability // Debondability) Achievable min. wafer thickness (TTV) WaferBOND WSS laser free ZoneBOND 11
12 SUSS OPEN EQUIPMENT PLATFORM AND SUPPORTED MATERIALS Other Material Suppliers WaferBOND WSS laser free ZoneBOND Different material classes: +Thermoplastic +Thermoset +Photoset 10 Material suppliers & processes: 9 enable mechanical Debonding 4 enable Laser Asstisted Room Temp. Debonding 12
13 TTV OPTIMIZATION - INFLUENCING FACTORS Optimization parameters are varying between material classes Release layer coating Release layer treatment Adhesive Coating Adhesive Curing Leveling Processes Bond Process Post Bond Curing Material Main influencing factors Thermoset Thermoplastic 13
14 TTV OPTIMIZATION EXAMPLE WITH THIN MATERIALS (TMAT) ADHESIVE TTV improvement from 10-15µm down to 2µm for C4 bumped wafers with 70µm bump height and 115µm adhesive thickness Before process optimization: bonded stack TTV = 10-15µm After process optimization: bonded stack TTV = 2µm Device Adhesive Carrier Bonded stack TTV 14
15 SCANNING ACOUSTIC MICROSCOPE IMAGES AFTER BONDING AND THINNING 300mm wafers with 8µm bumps, 60µm adhesive Si - TTV = 1.3 µm after thinning to 50µm SAM image post bond (full thickness) shows no voids SAM image after thinning to 50µm shows no defects 15
16 SUCCESFULL PROCESS FLOW INTEGRATION RESULTS AT IMEC Temp. Bond Adhesive Adhesive Thickness TTV after thinning on 50µm Si TTV[%] as a function of Adh. Thickness A 55µm 3µm 5,5% A 20µm 2µm 10% B 100µm 7µm 7% C 45µm 4µm 8,9% D 50µm 2µm 4,0% E 60µm 5µm 8,3% Device Carrier Device Carrier Thinned Device Wafer TTV of 50µm Si wafer 16
17 COST OF OWNERSHIP: OPTIMIZATION OF CLEANING PROCEDURES Solvent Dispense Spin Off Rinse Dry Process Steps Nozzle Flow Rate Nozzle Flow Rate Time // Spin Time Speed // Puddle Spin Speed Number of cycles Time Time Spin Speed Spin Speed Influencing Parameters Solves Adhesive Tape Frame Wafer Chemical #1 #1 Chemical #2 #2 Chemical #3 #3 Chemical #4 #4 Solvent Compability 17
18 COST OF OWNERSHIP: EXAMPLE FOR 8X IMPROVEMENT OF CLEANING COO Solvent Glue thickness Cleaning time Consumption of the solvent Origin POR 110 µm 100% 100% Improved POR 110 µm 72% 66% Comparison of the cleaning time and solvent consumption Solvent Price per liter Consumption of the solvent Volume Costs Origin POR Improved POR 100% 100% 100% 1,5 30% 66% 12,5% Comparison of the solvent consumption and the costs 8 18
19 DICING TAPE INTEGRITY CRITICAL FOR RESULTS SPECIAL RESISTANT TAPES INCREASE COO Solvent exposure can lead to substantial tape degradation Wrinkled tape increases the risk of thin wafer damage during handling 19
20 COST OF OWNERSHIP REDUCTION: TAPE PROTECTION ALLOWS TO USE STANDARD TAPES FOR MOST CLEANING CHEMICALS SUSS thin wafer cleaning module allows to protect the tape and frame + Good chance to use existing and qualified tapes (cost benefit) + Higher flexibility for cleaning solvents 20
21 HIGH TEMPERATURE / HIGH THROUGHPUT LOW COO CAPABLE LASER ASSISTED DEBONDING Optimization / Collaboration results: Adhesive stable at high postprocessing temperatures > 350 C Based on mature temporary bonding material composition Transparent adhesive allowing optical inspection Very simple & residueless cleaning Throughput: > 40wph Debonding time < 45sec for 300mm wafer (160mJ/cm2) In collaboration with Wafer stack after excimer laser debonding Wafer stack with glass carrier removed Wafer after cleaning 21
22 OUTLINE Introduction: Room Temperature Debonding Material/Process Optimization & Survey Conclusions & Roadmap 22
23 EXAMPLES OF COST EQUIPMENT / MATURITY FOR 2.5D / 3D PROCESSES Normalized Cost of Equipment / Wafer + 4 materials qualifed for or in volume manuf. + Cost reduction potential factor (from currently qualified process flows) + Main limitation: process latitude Maturity Qualified or in Production / Process Integration at Institutes / Customer Samples Internal Qual. Cost of Equipment includes: Bonder / Debonder / Device Wafer Cleaner, Carrier cleaning / recycling is not considered 23
24 LASER ASSISTED DEBONDING VS. MECHANICAL DEBONDING ROOM TEMP. DEBONDING REQUIREMENT MECHANICAL EXCIMER LASER ASSISTED 2.5D Interposer DUAL CARRIER PROCESS FLOW (SELECTIVE DEBONDING) * GLAS CARRIER 3D Memory Logic SILICON CARRIER RISK OF LASER ENERGY NEAR ACTIVE DEVICE ** * Limited Process window/latitude ** Risk can be significantly reduced by proper choice of adhesive/absorption layer Both processes suited to 3D and 2.5D requirements Mechanical debonding seems closest fit to 3D requirements Laser assisted process originally used only for high performance logic in very high volume it seems closest fit to 2.5D interposer requirements 24
25 ROADMAP: DRIVERS & LEVERS Bump size and density Final device wafer thickness Temperature and chemical load Choice of materials Material consumption Process timing and flow Equipment optimization Further TTV Optimization Extend room temp. debonding Extended process specifications New/Improved bond materials Close collaborations and JDPs with: Institutes, Adhesive and tape manufacturers IDMs, Foundries, OSATs 25
26 ROADMAP: SUSS MICROTEC/ITRI: 5µM ULTRA THIN WAFER 300mm 50µm thickness with TSV wafer SUSS XBS300 5µm Ultra Thin Wafer 26
27 SUMMARY Trend towards room temperature debonding Mechanical debonding mainly 3D processes Laser assisted debonding mostly 2.5 D processes 10 materials/processes available for room temperature debonding 4 in or qualified for Volume Manufacturing x Cost of Equipment reductions in nearterm roadmap Main optimization topic: process latitude Close collaborations enable roadmap Equipment vendors, material vendors IDMs, Foundries, OSATs, institutes 27
28 See you next time at: SUSS TECHNOLOGY FORUM ASIA 2013 Taiwan, Hsinchu November 13 China, Shanghai November 15 Korea November 19 28
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