EUVL Optics lifetime and contamination. European Update
|
|
- Shanon Hart
- 5 years ago
- Views:
Transcription
1 EUVL Optics life and contamination European Update EUVL Symposium 27 TWG Optics Contamination and Life Sapporo Bas Wolschrijn, TNO 1/12
2 % productivity EUV intensity [au] % productivity Pulse intensity CxHy typical vacuum system improved vacuum system EUVL vacuum system Cleaned mirrors EUVL vacuum system synchrotron AD tool pulsed Re flectivity FC115 B1 SI Reflectivity FC115 B1 SI Status EUVL symposium 2 Progress in the optics usage programme for ASML EUV Lithographic Tools Bas Wolschrijn 1 *, Rik Jansen 1, Arnold Storm 1, Bas Mertens 1, Dirk Ehm, Thomas Stein, Roel Moors 2, Vadim Banine 2, Hans Meiling 2 1) TNO Science and Industry, P.O Box AD Delft, The Netherlands 2) ASML,, De Run 111, Veldhoven, The Netherlands * corresponding author: bas.wolschrijn@tno.nl ) Carl Zeiss SMT-AG, Abt. HL-VT, D-744 Oberkochen, Germany Introduction In order to make EUV economically viable, optics usage should be in the range of 7-1 years (tens of thousands of illumination hours). The ASML strategy to reach the specification for optics usage includes: good vacuum reduced C-growth improved oxidation resistance of mirrors fast carbon ing, without mirror degradation productivity Optics reflectivity is not influenced by H 2 Influence of H 2 O pressure 1.E-8 1.E-7 1.E- 1.E-5 1.E-4 1.E H2O partial pressure [mbar] Amount of C-growth on mirror depends on EUV intensity and hydrocarbon (CxHy) partial pressure Illumination profile non-able effect non-ed ed R= will check with Roel for latest data -2.. Initial effect reflectivity map initial Prod. loss -2% Mild carbon growth Influence of non-ed ed Exposure H2O] H Optics reflectivity is influenced by C-growth Given experimental data, we expect mild carbon growth for lithotool vacuum environment R (%) Cleaning result R/R = -.15 ±.%! Exposure [Mpulse] R/R = -%! Intentionally Cleaning heavily carbonised mirrors up fully to initial reflectance has been experimentally ed proven!!! Summary - Carbon growth expected in lithotool - No oxidation expected - Optics degardation intensity dependent -Cleaning proven and implemented Progress in Optics Usage On the left: poster contribution EUVL symposium 2, Barcelona See also EU update Optics Life and contamination TWG meeting Barcelona 2 Reflectivity loss % Reflectivity loss R vs EUV power, using model CxHy at 1-5 mbar The first mirrors in the illuminator see the highest EUV intensity and thus the highest carbon growth rate Intensity at the POB mirrors is substantially lower Optics life [exp.hrs] ] production AD-tool Acknowledgements: FOM Rijnhuizen, Philips Eindhoven, PTB Berlin, ALS Berkeley 2/12
3 % productivity EUV intensity [au] % productivity Pulse intensity CxHy typical vacuum system improved vacuum system EUVL vacuum system Cleaned mirrors EUVL vacuum system synchrotron AD tool pulsed Re flectivity FC115 B1 SI Reflectivity FC115 B1 SI Status EUVL symposium 2 Progress in the optics usage programme for ASML EUV Lithographic Tools Bas Wolschrijn 1 *, Rik Jansen 1, Arnold Storm 1, Bas Mertens 1, Dirk Ehm, Thomas Stein, Roel Moors 2, Vadim Banine 2, Hans Meiling 2 1) TNO Science and Industry, P.O Box AD Delft, The Netherlands 2) ASML,, De Run 111, Veldhoven, The Netherlands * corresponding author: bas.wolschrijn@tno.nl ) Carl Zeiss SMT-AG, Abt. HL-VT, D-744 Oberkochen, Germany Introduction In order to make EUV economically viable, optics usage should be in the range of 7-1 years (tens of thousands of illumination hours). The ASML strategy to reach the specification for optics usage includes: good vacuum reduced C-growth improved oxidation resistance of mirrors fast carbon ing, without mirror degradation productivity non-able effect initial Prod. loss -2% Optics reflectivity is influenced by C-growth Exposure [Mpulse] Given experimental data, we expect mild carbon growth for lithotool vacuum environment Strategy productivity non-able effect initial Prod. loss -2% Optics reflectivity is not influenced by H Influence of H 2 O pressure non-ed ed R= 1.E-8 1.E-7 1.E- 1.E-5 1.E-4 1.E H2O partial pressure [mbar] will check with Roel for latest data Amount of C-growth on mirror depends on EUV intensity and hydrocarbon (CxHy) partial pressure Initial effect Mild carbon growth Influence of non-ed ed Exposure H2O] H R (%) Cleaning result R/R = -.15 ±.%! R/R = -%! Intentionally Cleaning heavily carbonised mirrors up fully to initial reflectance has been experimentally ed proven!!! Summary - Carbon growth expected in lithotool - No oxidation expected - Optics degardation intensity dependent -Cleaning proven and implemented Given experimental data, we expect mild carbon growth for lithotool vacuum environment Illumination profile reflectivity map Progress in Optics Usage Reflectivity loss % Reflectivity loss R vs EUV power, using model CxHy at 1-5 mbar The first mirrors in the illuminator see the highest EUV intensity and thus the highest carbon growth rate Intensity at the POB mirrors is substantially lower Optics life [exp.hrs] ] production AD-tool Acknowledgements: FOM Rijnhuizen, Philips Eindhoven, PTB Berlin, ALS Berkeley /12
4 % productivity EUV intensity [au] % productivity Pulse intensity CxHy typical vacuum system improved vacuum system EUVL vacuum system Cleaned mirrors EUVL vacuum system synchrotron AD tool pulsed Re flectivity FC115 B1 SI Reflectivity FC115 B1 SI Status EUVL symposium 2 Progress in the optics usage programme for ASML EUV Lithographic Tools Bas Wolschrijn 1 *, Rik Jansen 1, Arnold Storm 1, Bas Mertens 1, Dirk Ehm, Thomas Stein, Roel Moors 2, Vadim Banine 2, Hans Meiling 2 1) TNO Science and Industry, P.O Box AD Delft, The Netherlands 2) ASML,, De Run 111, Veldhoven, The Netherlands * corresponding author: bas.wolschrijn@tno.nl ) Carl Zeiss SMT-AG, Abt. HL-VT, D-744 Oberkochen, Germany Illumination profile reflectivity map Introduction In order to make EUV economically viable, optics usage should be in the range of 7-1 years (tens of thousands of illumination hours). The ASML strategy to reach the specification for optics usage includes: good vacuum reduced C-growth improved oxidation resistance of mirrors fast carbon ing, without mirror degradation productivity non-able effect initial Optics reflectivity is influenced by C-growth Exposure [Mpulse] Prod. loss -2% Given experimental data, we expect mild carbon growth for lithotool vacuum environment Optics reflectivity is not influenced by H Influence of H 2 O pressure non-ed ed R= 1.E-8 1.E-7 1.E- 1.E-5 1.E-4 1.E H2O partial pressure [mbar] will check with Roel for latest data -2.. Initial effect Mild carbon growth Influence of non-ed ed Exposure H2O] H R (%) Cleaning result R/R = -.15 ±.%! R/R = -%! Intentionally Cleaning heavily carbonised mirrors up fully to initial reflectance has been experimentally ed proven!!! Residual carbon growth is expected to be intensity dependent Amount of C-growth on mirror depends on EUV intensity and hydrocarbon (CxHy) partial pressure Summary - Carbon growth expected in lithotool - No oxidation expected - Optics degardation intensity dependent -Cleaning proven and implemented Illumination profile reflectivity map Progress in Optics Usage Reflectivity loss % Reflectivity loss R vs EUV power, using model CxHy at 1-5 mbar The first mirrors in the illuminator see the highest EUV intensity and thus the highest carbon growth rate Intensity at the POB mirrors is substantially lower Optics life [exp.hrs] ] production AD-tool Acknowledgements: FOM Rijnhuizen, Philips Eindhoven, PTB Berlin, ALS Berkeley 4/12
5 % productivity EUV intensity [au] % productivity Pulse intensity CxHy typical vacuum system improved vacuum system EUVL vacuum system Cleaned mirrors EUVL vacuum system synchrotron AD tool pulsed Re flectivity FC115 B1 SI Reflectivity FC115 B1 SI Status EUVL symposium 2 Progress in the optics usage programme for ASML EUV Lithographic Tools Bas Wolschrijn 1 *, Rik Jansen 1, Arnold Storm 1, Bas Mertens 1, Dirk Ehm, Thomas Stein, Roel Moors 2, Vadim Banine 2, Hans Meiling 2 1) TNO Science and Industry, P.O Box AD Delft, The Netherlands 2) ASML,, De Run 111, Veldhoven, The Netherlands * corresponding author: bas.wolschrijn@tno.nl ) Carl Zeiss SMT-AG, Abt. HL-VT, D-744 Oberkochen, Germany Introduction In order to make EUV economically viable, optics usage should be in the range of 7-1 years (tens of thousands of illumination hours). The ASML strategy to reach the specification for optics usage includes: good vacuum reduced C-growth improved oxidation resistance of mirrors fast carbon ing, without mirror degradation productivity non-able effect initial Prod. loss -2% Optics reflectivity is influenced by C-growth Exposure [Mpulse] Given experimental data, we expect mild carbon growth for lithotool vacuum environment R (%) Cleaning result R/R = -.15 ±.%! R/R = -%! - - Reflectivity FC115 B1 SI Optics reflectivity is not influenced by H 2 Mild carbon growth Cleaning result Influence of H 2 O pressure non-ed ed R= 1.E-8 1.E-7 1.E- 1.E-5 1.E-4 1.E H2O partial pressure [mbar] will check with Roel for latest data -2.. Initial effect Influence of non-ed ed Exposure H2O] H R (%) R/R = -%! Intentionally Cleaning heavily carbonised mirrors up fully to initial reflectance has been experimentally ed proven!!! R/R = -.15 ±.%! Intentionally carbonised mirror fully Cleaning on heavily carbonised mirrors up to initial reflectance has been experimentally ed proven!!! Reflectivity loss % Amount of C-growth on mirror depends on EUV intensity and hydrocarbon (CxHy) partial pressure Illumination profile Reflectivity loss R vs EUV power, using model CxHy at 1-5 mbar reflectivity map The first mirrors in the illuminator see the highest EUV intensity and thus the highest carbon growth rate Intensity at the POB mirrors is substantially lower Summary - Carbon growth expected in lithotool - No oxidation expected - Optics degardation intensity dependent -Cleaning proven and implemented Progress in Optics Usage Optics life [exp.hrs] ] production AD-tool Losses due to any carbon growth will be ed Acknowledgements: FOM Rijnhuizen, Philips Eindhoven, PTB Berlin, ALS Berkeley 5/12
6 So far for the observation from experimental program What do we observe at when Alpha Demo Tools are operational? /12
7 ADT data During usage of ASML Alpha tools, the mirror contamination behavior has been investigated for several mirrors The observed contamination rate is different for various mirrors contamination rate depends on intensity, similar to the findings in our experimental setups Contamination is proven to be reversible (able) with implemented ing method as expected ADT mirror data Fit Contamination Rate Intensity 7/12
8 ADT data We measured the contamination distribution on one single mirror ( spot resolved ) Intensity dependence also observed within one single mirror ADT mirror data Fit Single mirror: spot resolved Contamination Rate Intensity 8/12
9 ADT data Intensity dependence also observed by in-situ measurement(s) (dedicated experiment) ADT mirror data Fit In-situ reference measurement Single mirror: spot resolved Contamination Rate Intensity /12
10 ADT data: after liness improvements Reason for contamination is known/understood Additional vacuum improvements further enhanced the liness of the Alpha Tools below detectable levels (!) ADT mirror data Fit In-situ reference measurement Single mirror: spot resolved Contamination Rate In-situ reference measurement after improvements Intensity 1/12
11 Towards Production tools Alpha tools learning Production tool program Fundamental research The ASML strategy to reach the specification for optics usage includes: good vacuum reduced C-growth improved oxidation resistance of mirrors fast carbon ing, without mirror degradation 11/12
12 Acknowledgements Carl Zeiss SMT AG, Oberkochen, Germany ASML, Veldhoven, The Netherlands TNO Science and Industry, Delft/Eindhoven, The Netherlands FOM, Nieuwegein, The Netherlands PTB, Berlin, Germany Philips, Eindhoven, The Netherlands ALS, Berkeley, USA 12/12
Progress on ASML s EUV Alpha Demo Tool
Progress on ASML s EUV Alpha Demo Tool Noreen Harned 1, Peter Kuerz 3, Hans Meiling 2, Bas Mertens 5, Gregor van Baars 4 3rd International EUVL Symposium 2 November 2004 1 ASML, Wilton, CT; 2 ASML, Veldhoven,
More informationOverview of EUV Lithography and EUV Optics Contamination
Accelerating the next technology revolution Overview of EUV Lithography and EUV Optics Contamination Andrea Wüest NIST Contamination WS Gaithersburg, MD June 2, 2009 Copyright 2008 SEMATECH, Inc. SEMATECH,
More informationMonitoring EUV Reticle Molecular Contamination on ASML s Alpha Demo Tool
Monitoring EUV Reticle Molecular Contamination on ASML s Alpha Demo Tool Uzodinma Okoroanyanwu, 1 Aiqin Jiang, 2 Kornelia Dittmar, 3 Torsten Fahr, 3 Thomas Laursen, 2 Obert Wood, 1 Kevin Cummings, 2 Christian
More informationHigh NA the Extension Path of EUV Lithography. Dr. Tilmann Heil, Carl Zeiss SMT GmbH
High NA the Extension Path of EUV Lithography Dr. Tilmann Heil, Carl Zeiss SMT GmbH Introduction This talk is about resolution. Resolution λ = k 1 NA High-NA NA 0.33 0.4 0.5 0.6 Resolution @ k1=0.3 single
More informationCurrent development status of Shin-Etsu EUV pellicle
Current development status of Shin-Etsu EUV pellicle Advanced Functional Materials Research Center 1 Why Pellicle for EUV Lithography? Extensive studies on particle addition during reticle transfer have
More informationResist-outgas testing and EUV optics contamination at NIST
1 2012 International Workshop on EUVL, Maui, HI Resist-outgas testing and EUV optics contamination at NIST Shannon Hill, Nadir Faradzhev, Charles Tarrio, Steve Grantham, Lee Richter and Tom Lucatorto National
More informationScreening of basic resist materials and PAGs for EUV-Lithography
Screening of basic resist materials and PAGs for EUV-Lithography 1. Int. EUVL-Symposium, Dallas, TX Klaus Lowack, Wolf-Dieter Domke, liver Kirch, Karl Kragler, Heinz-Ulrich Scheunemann* Infineon Technologies
More informationCarbon removal from trenches on EUV reticles
Carbon removal from trenches on EUV reticles N.B. Koster a*, C.P.E.C. Geluk a, T.W. Versloot b, J.P.B. Janssen a, Y. Fleming c, T. Wirtz c a TNO, Stieltjesweg 1, 2628 CK Delft, The Netherlands; b ESA,
More informationActinic review of EUV masks: First results from the AIMS EUV system integration
Invited Paper Actinic review of EUV masks: First results from the AIMS EUV system integration Markus R. Weiss* a, Dirk Hellweg a, Jan Hendrik Peters b, Sascha Perlitz b, Anthony Garetto b, Michael Goldstein
More informationASML Approach to Euv Reticle Handling
ASML Approach to Euv Reticle Handling Mask Workshop Antwerp Henk Meijer 3-October-2003 / Slide 1 Presentation Agenda Unique features of EUV reticles Contamination
More informationCleaning of Silicon-Containing Carbon Contamination
RC-P4 Cleaning of Silicon-Containing Carbon Contamination Toshihisa Anazawa, Noriaki Takagi, Osamu Suga, Iwao Nishiyama MIRAI-Semiconductor Leading Edge Technologies, Inc. Koichi Yamawaki, Hirotsugu Yano,
More informationAnalysis of carbon contamination on EUV mask using CSM/ ICS
Analysis of carbon contamination on EUV mask using CSM/ ICS Jae Uk Lee 1, Chang Young Jeong 1, Sangsul Lee 1, Jong Gul Doh 1,, Dong Geun Lee 2, Seong-Sue Kim 2, Han-Ku Cho 2, Seung-yu Rah 3 and Jinho Ahn
More informationEUV lithography industrialization for HVM
EUV lithography industrialization for HVM Michael Lercel Director, Strategic Marketing, Tokyo Outline Slide 2 NXE Roadmap NXE:3400B performance Reticle front-side defectivity EUV source roadmap EUV extendibility
More informationSpectroscopic Studies of Soft X-Ray Emission from Gadolinium Plasmas
I. Kambali, G. Atom O Sullivan Indonesia / Atom Vol. Indonesia 4 No. 2 (24) Vol. 47 No. - 2 (24) 7 - Spectroscopic Studies of Soft X-Ray Emission from Gadolinium Plasmas I. Kambali * and G. O Sullivan
More informationEUV Lithography and EUVL sources: from the beginning to NXE and beyond. V. Banine
EUV Lithography and EUVL sources: from the beginning to NXE and beyond. V. Banine Content EUV lithography: History and status EUV sources- historical perspective: Age of choice Age of Xe Age of Sn Age
More informationPadraig Dunne, UCD School of Physics Dublin, Ireland.
Padraig Dunne, UCD School of Physics Dublin, Ireland. Contents Zurich Prague Dublin Padova Carl Zeiss Aachen ASML IMEC EPPRA Xtreme ISAN ISAN Progress in on line MLM carbon cleaning Progress in radiative
More informationEnhanced Performance of Multilayer Optics for Water Window Microscopy
Enhanced Performance of Multilayer Optics for Water Window Microscopy 2016 International Workshop on EUV and soft X-Ray Sources Torsten Feigl, Hagen Pauer, Tobias Fiedler, Marco Perske optix fab GmbH,
More informationEUV Lithography Status and Key Challenges for HVM Implementation
EUV Lithography Status and Key Challenges for HVM Implementation Sam Intel Corporation Moore s Law at Intel 10 Feature Size (um) 100 Cell Area (sq um) 1 10 0.5x every 2 years 0.1 1 0.01 1970 1980 1990
More informationOverview European EUVL programme
Rob Hartman Overview European EUVL programme Rob Hartman 3 rd International EUVL Symposium Miyazaki, 3 November, 2004 Rob Hartman Agenda When EUV? European programme in risk areas Source Tool & Optics
More informationHolographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks
Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanks David Nijkerk, Norbert Koster, Eddy van Brug and Diederik Maas* TNO Science and Industry, Stieltjesweg
More informationA short pulsed laser cleaning system for EUVL tool
A short pulsed laser cleaning system for EUVL tool Masami Yonekawa, Hisashi Namba and Tatsuya Hayashi Nanotechnology & Advanced System Research Laboratories, Canon inc. 23-10, Kiyohara-Kogyodanchi, Utsunomiya-shi,
More informationHigh Accuracy EUV Reflectometry and Scattering at the Advanced Light Source
High Accuracy EUV Reflectometry and Scattering at the Advanced Light Source Eric Gullikson Lawrence Berkeley National Laboratory 1 Reflectometry and Scattering Beamline (ALS 6.3.2) Commissioned Fall 1994
More informationEUV Lithography Towards Industrialization
EUV Lithography Towards Industrialization Wim van der Zande, Director of Research, ASML Dublin Meeting November 2014 Slide 2 Agenda EUV benefit and status at customers Towards higher productivity Summary
More informationCharacterization of XUV sources
Characterization of XUV sources Stuik, R. DOI: 10.6100/IR558141 Published: 01/01/2002 Document Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers) Please
More informationAblation Dynamics of Tin Micro-Droplet Target for LPP-based EUV light Source
1 Ablation Dynamics of Tin Micro-Droplet Target for LPP-based EUV light Source D. Nakamura, T. Akiyama, K. Tamaru, A. Takahashi* and T. Okada Graduate School of Information Science and Electrical Engineering,
More informationStatus of multilayer coatings for EUV Lithography
Status of multilayer coatings for EUV Lithography Yuriy Platonov 1, Jim Rodriguez 1, Michael Kriese 1 Eric Louis 2, Torsten Feigl 3, Sergey Yulin 3, 1 Rigaku Innovative Technologies, 1900 Taylor Rd., Auburn
More informationBEUV nanolithography: 6.7 or 11 nm?
BEUV nanolithography: 6.7 or 11 nm? N. I. Chkhalo, N. N. Salashchenko Institute for physics of microstructures of RAS, Nizhny Novgorod, Russia 2013 International Workshop on EUV and Soft X-Ray Dublin Ireland
More informationVisualization of Xe and Sn Atoms Generated from Laser-Produced Plasma for EUV Light Source
3rd International EUVL Symposium NOVEMBER 1-4, 2004 Miyazaki, Japan Visualization of Xe and Sn Atoms Generated from Laser-Produced Plasma for EUV Light Source H. Tanaka, A. Matsumoto, K. Akinaga, A. Takahashi
More informationLaser-produced extreme ultraviolet (EUV) light source plasma for the next generation lithography application
Laser-produced extreme ultraviolet (EUV) light source plasma for the next generation lithography application EUV light source plasma Tin icrodroplet Main pulse (CO2 laser pulse) Pre-pulse (Nd:YAG laser
More informationEUREKA: A new Industry EUV Research Center at LBNL
EUREKA: A new Industry EUV Research Center at LBNL Patrick Naulleau Center for X-ray Optics Lawrence Berkeley National Laboratory Berkeley Lab MSD Materials Sciences Division 1 Operating model Core operational
More informationKirkpatrick Baez X ray optics for astrophysics: Recent status
Contrib. Astron. Obs. Skalnaté Pleso 8, 37 5, (18) Kirkpatrick Baez X ray optics for astrophysics: Recent status R. Hudec 1,, L. Pina 3, V. Marsikova 1, O. Nentvich 1, M. Urban 1 and A. Inneman 1 1 Czech
More informationarxiv: v1 [cond-mat.mtrl-sci] 25 Aug 2014
arxiv:1408.5704v1 [cond-mat.mtrl-sci] 25 Aug 2014 Graphene defect formation by extreme ultraviolet generated photoelectrons A. Gao, 1, 2, a) C.J. Lee, 1, 2 and F. Bijkerk 1, 2 1) FOM-Dutch Institute for
More informationEvaluation at the intermediate focus for EUV Light Source
Evaluation at the intermediate focus for EUV Light Source Takashi Suganuma, Georg Soumagne, Masato Moriya, Tamotsu Abe, Akira Sumitani, Akira Endo Extreme Ultraviolet Lithography System Development Association
More informationDan Smith 2016 EUV Mask Pellicle TWG San Jose CA 21 Feb 2016
ASML NXE Pellicle progress update Dan Smith 2016 EUV Mask Pellicle TWG San Jose CA 21 Feb 2016 Contents Slide 2 Introduction: a look back at 2015 NXE Pellicle update Pellicle film development NXE Scanner
More informationDesign Study. Carl Zeiss Microelectronic Systems GmbH Enabling the Nano-Age World
Carl Zeiss Microelectronic Systems GmbH Enabling the Nano-Age World,AIMS EUV Development Design Study Karl-Heinz Bechstein, Mathias Esselbach, Wolfgang Harnisch, Norbert Rosenkranz, Thomas Scherübl, Holger
More informationEUV-collector mirrors for high-power LPP sources
EUV-collector mirrors for high-power LPP sources EUV Source Workshop Torsten Feigl, Sergiy Yulin, Nicolas Benoit, Norbert Kaiser Fraunhofer IOF Jena Norbert Böwering, Oleh Khodykin, David Brandt Cymer,
More informationComparison of Techniques to Measure the Point Spread Function due to Scatter and Flare in EUV Lithography Systems
Metrology, 61 Comparison of Techniques to Measure the Point Spread Function due to Scatter and Flare in EUV Lithography Systems Manish Chandhok,, Sang H. Lee, Christof Krautschik, Guojing Zhang, Bryan
More informationEUV Reflectometry for Determining the Optical Properties of Photoresists and Underlayer Materials Upon Irradiation at 13.5-nm
EUV Reflectometry for Determining the Optical Properties of Photoresists and Underlayer Materials Upon Irradiation at 13.5-nm Grace H. Ho, 1 Fu-H. Kang, 1 Yu-H. Shih, 1 Hok-S. Fung, Hwang-W. Fu, Rikimaru
More informationOptical Design for Affordable EUV Lithography Michael Goldstein, Ph.D. Vivek Bakshi, Ph.D. October 31, 2007
Optical Design for Affordable EUV Lithography Michael Goldstein, Ph.D. Vivek Bakshi, Ph.D. October 31, 2007 Advanced Materials Research Center, AMRC, International SEMATECH Manufacturing Initiative, and
More informationFEASIBILITY OF IN SITU TXRF
FEASIBILITY OF IN SITU TXRF A. ngh 1, P. Goldenzweig 2, K. Baur 1, S. Brennan 1, and P. Pianetta 1 1. Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309, US 2. Binghamton University, New York,
More informationLab- and field-test results of MFIG, the first real-time vacuum-contamination sensor
Lab- and field-test results of MFIG, the first real-time vacuum-contamination sensor Diederik Maas *, 1 Pim Muilwijk, Michel van Putten, Frank de Graaf, Olaf Kievit, Patrique Boerboom and Norbert Koster
More informationChromeless Phase Lithography (CPL)
Chromeless Phase Lithography (CPL) Chromeless Phase Lithography or CPL is a recent development in the area of phase shifting technology that is extending the perceived k 1 limits and has the potential
More informationHigh Brightness EUV Light Source System Development for Actinic Mask Metrology
High Brightness EUV Light Source System Development for Actinic Mask Metrology Peter Choi, Sergey V. Zakharov, Raul Aliaga-Rossel, Aldrice Bakouboula, Otman Benali, Philippe Bove, Michèle Cau, Grainne
More informationComparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges
Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges E. R. Kieft,* K. Garloff, and J. J. A. M. van der Mullen Department of Applied Physics, Eindhoven University
More informationFiducial Marks for EUV mask blanks. Jan-Peter Urbach, James Folta, Cindy Larson, P.A. Kearney, and Thomas White
Fiducial Marks for EUV mask blanks Jan-Peter Urbach, James Folta, Cindy Larson, P.A. Kearney, and Thomas White Fiducial marks are laser scribed on 200 mm wafers to enable defect registration on metrology
More informationDocument Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)
Comparison of experimental and simulated extreme ultraviolet spectra of xenon and tin discharges Kieft, E.R.; Garloff, K.; Mullen, van der, J.J.A.M.; Banine, V.Y. Published in: Physical Review E DOI: 10.1103/PhysRevE.71.036402
More informationLecture 8. Photoresists and Non-optical Lithography
Lecture 8 Photoresists and Non-optical Lithography Reading: Chapters 8 and 9 and notes derived from a HIGHLY recommended book by Chris Mack, Fundamental Principles of Optical Lithography. Any serious student
More informationStatus of EUV Sources for Mask Metrology
Status of EUV Sources for Mask Metrology Vivek Bakshi, Ph.D. EUV Litho Inc. 10202 Womack Road, Austin, TX 78748 USA www.euvlitho.com vivek.bakshi@euvlitho.com Outline Background Current Technology Status
More informationABSTRACT 1. INTRODUCTION
Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist Nima Kalhor a, Wouter Mulckhuyse b, Paul Alkemade a and Diederik Maas* b a Kavli Institute of Nanoscience,
More informationInteractions of 3D mask effects and NA in EUV lithography
Second Place, Best Paper Award Interactions of 3D mask effects and NA in EUV lithography Jens Timo Neumann* a, Paul Gräupner a, Winfried Kaiser a, Reiner Garreis a, Bernd Geh b a Carl Zeiss SMT GmbH, Rudolf-Eber-Str.
More informationDamage to Molecular Solids Irradiated by X-ray Laser Beam
WDS'11 Proceedings of Contributed Papers, Part II, 247 251, 2011. ISBN 978-80-7378-185-9 MATFYZPRESS Damage to Molecular Solids Irradiated by X-ray Laser Beam T. Burian, V. Hájková, J. Chalupský, L. Juha,
More informationMeasurement of EUV scattering from Mo/Si multilayer mirrors
Measurement of EUV scattering from Mo/Si multilayer mirrors N. Kandaka, T. Kobayashi, T. Komiya, M. Shiraishi, T. Oshino and K. Murakami Nikon Corp. 3 rd EUVL Symposium Nov. 2-4 2004 (Miyazaki, JAPAN)
More informationMultilayer Optics, Past and Future. Eberhard Spiller
Multilayer Optics, Past and Future Eberhard Spiller 1 Imaging with light Waves move by λ in 10-15 to 10-19 sec Wave trains are 10-14 to 10-18 sec long Each wavelet contains less than 1 photon Eye responds
More informationInnovative partnership offers benefits for all
2007 Spring Edition ASML s customer magazine Innovative partnership offers benefits for all Smart Service enables best-in-class support Paving the way to sub 40-nm imaging and double patterning 8 12 16
More informationHigh-resolution EUV Microstepper tool for resist testing & technology evaluation
High-resolution EUV Microstepper tool for resist testing & technology evaluation A Brunton, J Cashmore, P Elbourn, G Elliner, M Gower, P Grünewald, M Harman, S Hough, N McEntee, S Mundair, D Rees, P Richards,
More informationDocument Version Publisher s PDF, also known as Version of Record (includes final page, issue and volume numbers)
Particle-in-cell Monte Carlo simulations of an extreme ultraviolet radiation driven plasma van der Velden, M.H.L.; Brok, W.J.M.; van der Mullen, J.J.A.M.; Goedheer, W.J.; Banine, V.Y. Published in: Physical
More informationThomas Schwarz-Selinger. Max-Planck-Institut for Plasmaphysics, Garching Material Science Division Reactive Plasma Processes
Max-Planck-Institut für Plasmaphysik Thomas Schwarz-Selinger Max-Planck-Institut for Plasmaphysics, Garching Material Science Division Reactive Plasma Processes personal research interests / latest work
More informationCustomized EUV optics made by optix fab
Customized EUV optics made by optix fab Information about optix fab product portfolio Torsten Feigl Jena, January 2015 Outline Introduction Infrastructure EUV multilayer optics activities Product highlights
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Spatial scaling metrics of mask-induced induced line-edge roughness Permalink https://escholarship.org/uc/item/5rc666c3
More informationTakeo Watanabe Center for EUVL, University of Hyogo
Soft X-ray Absorption Spectroscopy using SR for EUV Resist Chemical Reaction Analysis Takeo Watanabe Center for EUVL, University of Hyogo Outline 1) Background 2) Princple of X-ray absorption spectroscopy
More informationTechniques for directly measuring the absorbance of photoresists at EUV wavelengths
Techniques for directly measuring the absorbance of photoresists at EUV wavelengths Manish Chandhok, a Heidi Cao, a Wang Yueh, a Eric Gullikson, b Robert Brainard, c Stewart Robertson c a Intel Corporation,
More informationStability of Organic Materials. Anders Hagfeldt Dept. of Physical Chemistry Ångström Solar Center Uppsala University
Stability of Organic Materials Anders Hagfeldt Dept. of Physical Chemistry Ångström Solar Center Uppsala University Anders.Hagfeldt@fki.uu.se Specific features of DSC Charge separation and transport are
More informationEO single-shot temporal measurements of electron bunches
EO single-shot temporal measurements of electron bunches and of terahertz CSR and FEL pulses. Steven Jamison, Giel Berden, Allan MacLeod Allan Gillespie, Dino Jaroszynski, Britta Redlich, Lex van der Meer
More informationUncertainty Analysis for Heat-flux DSC Measurements
Uncertainty Analysis for Heat-flux DSC Measurements metrology-focused coordinated R&D integration of national research programmes supported by the European Commission collaboration between National Measurement
More informationSpin-resolved photoelectron spectroscopy
Spin-resolved photoelectron spectroscopy Application Notes Spin-resolved photoelectron spectroscopy experiments were performed in an experimental station consisting of an analysis and a preparation chamber.
More informationPolymer Matrix Effects on EUV Acid Generation
Polymer Matrix Effects on EUV Acid Generation Theodore H. Fedynyshyn, Russell B. Goodman, and Jeanette Roberts # Lincoln Laboratory Massachusetts Institute of Technology # Intel Corporation The Lincoln
More informationFabrication of EUVL Micro-field Exposure Tools with 0.5 NA
Fabrication of EUVL Micro-field Exposure Tools with 0.5 NA EUV Litho, June 15 th, 2016 Luc Girard 1, Lou Marchetti 1, Jim Kennon 2, Bob Kestner 2, Regina Soufli 3, Eric Gullickson 4 1 Zygo Corporation,
More informationA Straight Forward Path (Roadmap) to EUV High Brightness LPP Source
Introduction and Outline A Straight Forward Path (Roadmap) to EUV High Brightness LPP Source Rainer Lebert, AIXUV Target Features of High Brightness EUV Source LPP Concept to reach Specification Target
More informationThe TROPOMI Telescope
The TROPOMI Telescope Design, fabrication and test of a freeform optical system Authors: David Nijkerk Bart van Venrooy Peter van Doorn Rens Henselmans Folkert Draaisma André Hoogstrate Presented by Ad
More informationDesign of Attenuated Phase-shift shift Mask with ITO Absorber for Extreme Ultraviolet Lithography
MA-P18 7 EUVL Symposium Design of Attenuated Phase-shift shift Mask with Absorber for Extreme Ultraviolet Lithography Hee Young Kang and Chang Kwon Hwangbo Department of Physics, Inha University, Incheon
More informationUV Source Series. UVS 10/35 gas discharge, UVS 300 duoplasmatron. Key Features
UV Source Series UVS 10/35 gas discharge, UVS 300 duoplasmatron and UVLS microwave source for UPS and arpes Key Features Ultimate intensity and stability UV sources Ease of operation Variable excitation
More informationDebris characterization and mitigation from microscopic laser-plasma tin-doped droplet EUV sources
Debris characterization and mitigation from microscopic laser-plasma tin-doped droplet EUV sources Kazutoshi Takenoshita, Chiew-Seng Koay, Somsak Teerawattansook, & Martin Richardson Laser Plasma Laboratory,
More informationFigure 1 below shows the generic process flow of an LELE method of double patterning.
Multilayer Double Patterning MCEE 505/605 LM&P Rajiv Sejpal (585) 622-8081 rns4256@rit.edu Dept. of Microelectronics Engineering, Rochester Institute of Technology GOAL Due to the delay in next generation
More informationFHI Lecture Series Modern Methods in Heterogeneous Catalysis: Transient Infrared Spectroscopy
FHI Lecture Series Modern Methods in Heterogeneous Catalysis: Transient Infrared Spectroscopy Prof. Guido Mul University of Twente Thanks to : Dr. Gerben Hamminga (now BASF) Dr. Dirk Renckens (now ASML)
More informationSUPPORTING INFORMATION: Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport
SUPPORTING INFORMATION: Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport Keren M. Freedy 1, Ashutosh Giri 2, Brian M. Foley 2, Matthew R. Barone 1, Patrick
More informationCHARACTERIZING CRACKS WITH ACTIVE THERMOGRAPHY
CHARACTERIZING CRACKS WITH ACTIVE THERMOGRAPHY J. Schlichting, G. N. Kervalishvili, Ch. Maierhofer, M. Kreutzbruck BAM Federal Institute for Materials Research and Testing, Berlin, Germany 1. Introduction
More informationOptical characterization of highly inhomogeneous thin films
Optical characterization of highly inhomogeneous thin films D.M. Rosu, A. Hertwig, P. Petrik, U. Beck Department 6.7 - Surface Modification and Measurement Technique BAM - Federal Institute for Materials
More informationA NEW REALIZATION OF TERRESTRIAL TIME
CCTF/04-17 A NEW REALIZATION OF TERRESTRIAL TIME G. Petit BIPM, Pavillon de Breteuil, 92312 Sèvres Cedex France- e-mail: gpetit@bipm.org ABSTRACT Terrestrial Time TT is a time coordinate in a geocentric
More informationThermal Expansion property and Surface Finish capability of CLEARCERAM -Z series for EUVL Photomask Substrate Application
Thermal Expansion property and Surface Finish capability of CLEARCERAM -Z series for EUVL Photomask Substrate Application Kousuke Nakajima, Toshihide Nakajima, Yoshiyuki Owari OHARA Incorporated 3 rd International
More informationPhotolithography II ( Part 1 )
1 Photolithography II ( Part 1 ) Chapter 14 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science
More informationEUV-Technology with Discharge EUV-Lamp"
EUV-Technology with Discharge EUV-Lamp" Rainer Lebert, Larissa Juschkin, Christian Wies, Bernhard Jägle, Manfred Meisen, Ulrich Bieberle, Willi Neff, Juri Barthel, Konstantin Walter, Klaus Bergmann, Fraunhofer
More informationIn-Situ Analysis of Traces, Minor and Major Elements in Rocks and Soils with a Portable XRF Spectrometer*
In-Situ Analysis of Traces, Minor and Major Elements in Rocks and Soils with a Portable XRF Spectrometer* Anthony Thomas 1, Joachim Heckel 1, and Dirk Wissmann 1 Search and Discovery Article #41836 (2016)
More informationDevelopment of the High-Temperature Dew-Point Generator Over the Past 15 Years
Int J Thermophys (2017) 38:161 DOI 10.1007/s10765-017-2291-x TEMPMEKO 2016 Development of the High-Temperature Dew-Point Generator Over the Past 15 Years R. Bosma 1 J. Nielsen 2 A. Peruzzi 1 Received:
More informationResist material for negative tone development process
Resist material for negative tone development process FUJIFILM Corporation Electronic Materials Research Laboratories P-1 Outline 1. Advantages of negative tone imaging for DP 2. Process maturity of negative
More informationLead time reduction by optimal test sequencing
Lead time reduction by optimal test sequencing Roel Boumen, Ivo de Jong, Asia van de Mortel-Fronczak, Koos Rooda / Slide Bibliography Ir. Roel Boumen MSc degree in Mechanical Engineering in 24 on supervisory
More informationMeasuring the EUV-induced contamination rates of TiO 2 -capped multilayer optics by anticipated production-environment hydrocarbons
Measuring the EUV-induced contamination rates of TiO 2 -capped multilayer optics by anticipated production-environment hydrocarbons S. B. Hill * a, N. S. Faradzhev b, C. S. Tarrio a, and T. B. Lucatorto
More informationBroadband transmission grating spectrometer for measuring the emission spectrum of EUV sources
Broadband transmission grating spectrometer for measuring the emission spectrum of EUV sources Extreme ultraviolet (EUV) light sources and their optimization for emission within a narrow wavelength band
More informationFundamental investigation on CO 2 laser-produced Sn plasma for an EUVL source
Fundamental investigation on CO 2 laser-produced Sn plasma for an EUVL source Yezheng Tao*, Mark Tillack, Kevin Sequoia, Russel Burdt, Sam Yuspeh, and Farrokh Najmabadi University of California, San Diego
More informationCurrent status, challenges, and outlook of EUV Lithography for High Volume Manufacturing
Current status, challenges, and outlook of EUV Lithography for High Volume Manufacturing Britt Turkot Intel Corporation Outline Milestone Progress Exposure Tool Reticle Pellicle Infrastructure HVM Considerations
More informationSecurity in Outer Space: Rising Stakes
Security in Outer Space: Rising Stakes Forging ahead: from SSA to Space Safety 12 th ESPI Autumn Conference, Vienna, 27-28 Septembre Nicolas Bobrinsky ESA, H/ SSA Programme ESA UNCLASSIFIED - For Official
More informationGas-phase study of the reactivity of optical coating materials with hydrocarbons by use of a desktop-size extreme-ultraviolet laser
Heinbuch et al. Vol. 25, No. 7/July 2008/J. Opt. Soc. Am. B B85 Gas-phase study of the reactivity of optical coating materials with hydrocarbons by use of a desktop-size extreme-ultraviolet laser Scott
More informationNanoholes for leak metrology
Vacuum Metrology for Industry Nanoholes for leak metrology Università Degli Studi di Genova, Italy OUTLINE INTRODUCTION FABRICATION OF NANOHOLES GEOMETRICAL CHARACTERIZATION LEAK DEVICES RESULTS: PTB INRIM
More informationEVALUATION OF THE UNCERTAINTY IN THE REALIZATION OF THE PLTS-2000 AT NMi
EVALUATION OF THE UNCERTAINTY IN THE REALIZATION OF THE PLTS-000 AT NMi A. Peruzzi and M.J. de Groot Nmi van Swinden Laboratorium, Delft, The Netherlands 1 Abstract The Provisional Low Temperature Scale
More informationTransparent Ohmic Contacts to N-polar n-type GaN
Transparent Ohmic Contacts to N-polar n-type GaN M. A. Hopkins a, S. Thornley b, J. Dutson b, G. Christmann c, S. Nicolay c, I. Marozau c, O. Sereda c, J. Niemela d, M. Creatore d, J. Ellis e, D.W.E. Allsopp
More informationEUVL Readiness for High Volume Manufacturing
EUVL Readiness for High Volume Manufacturing Britt Turkot Intel Corporation Outline Exposure Tool Progress Power Availability Intel demo results Reticle Defectivity Pellicle Materials Conclusion 2 Source
More informationImage Degradation from Surface Scatter in EUV Optics
Image Degradation from Surface Scatter in EUV Optics D. P. Gaines, T. P. Daly, D. G. Steams, B. LaFontaine, D. W. Sweeney, D. Fuchs This paper was prepared for submittal to the Optical Society of America
More informationDéposition séléctive le rêve reviens
Willkommen Welcome Bienvenue Déposition séléctive le rêve reviens Patrik Hoffmann Michael Reinke, Yury Kuzminykh Ivo Utke, Carlos Guerra-Nunez, Ali Dabirian, Xavier Multone, Tristan Bret, Estelle Halary-Wagner,
More informationASTP The Industries that need Analytical Sciences
Advancing Dutch Analytical Sciences The Industries that need Analytical Sciences 24, 25 and 28 August 2015, 2.5 days HAN, Laan van Scheut 2, Nijmegen Content This two-and-a-half day course will inform
More informationUnraveling the Carrier Dynamics of BiVO 4 : A Femtosecond to Microsecond Transient Absorption Study
Supporting Information to Unraveling the arrier Dynamics of ivo 4 : A Femtosecond to Microsecond Transient Absorption Study Janneke Ravensbergen A, Fatwa F. Abdi, Judith H. van Santen A, Raoul N. Frese
More informationALIGNMENT ACCURACY IN A MA/BA8 GEN3 USING SUBSTRATE CONFORMAL IMPRINT LITHOGRAPHY (SCIL)
ALIGNMENT ACCURACY IN A MA/BA8 GEN3 USING SUBSTRATE CONFORMAL IMPRINT LITHOGRAPHY (SCIL) Robert Fader Fraunhofer Institute for Integrated Systems and Device Technology (IISB) Germany Ulrike Schömbs SUSS
More information