CLASS C. James Buckwalter 1

Size: px
Start display at page:

Download "CLASS C. James Buckwalter 1"

Transcription

1 CLASS C James Buckwalter 1

2 Class-C Amplifier Like class-b, I quiescent = 0 Unlike class-b, conduction angle < 180 deg Gain is low since device is turned on for only a short period Iout Imax Vmin Vmax ut match match Harmonics are shorted RL Vce Ic Vrf time Idc time James Buckwalter 2

3 Class-C Amplifier I quiescent = 0 I dc < I rf / p Iout Imax P out (rf) < 1/4 V rf I rf P in (dc)= V o I dc h max =p/4*(v max -V min )/(V max +V min ) Vmin Vmax ut match match Harmonics are shorted RL Vce Ic Vrf time Idc time James Buckwalter 3

4 Load Impedance Is A Resonant Network Short at all harmonics here Representative Z values At fo -j2w j2w 10 W match Z fo RL Z=RL at fo Z=0 at 2fo, 3fo, 4fo, At 2fo -j1w j4w 10 W fo 2fo James Buckwalter 4

5 Class-C Waveform Ic Idc time I ( t) = ìï í îï i PK cosq - I DC when i PK cosq > I DC 0 otherwise cosf = I DC i PK I DC is the (negative) offset i PK is the amplitude I DC = 1 F ò I ( q ) dq = 1 2p 2p 0 I DC = 1 ( p i sinf - I F PK DD ) F ò 0 ( ) i PK cosq - I DD dq I FUND = 1 p I FUND = 2 p 2p ò 0 F ò 0 ( ) I q cosqdq = 2 p ( ) I q ( i PK cos 2 q - I DC cosq )dq James Buckwalter 5 F ò 0 cosqdq I FUND = 2 æ1 p 2 i PKF+ 1 4 i ö ç PK sin2f - I DC sinf è ø I FUND = 2 p i æ 1 PK 2 F+ 1 ö ç sin2f - cosfsinf è 4 ø I FUND = i æ PK ç p F - 1 è 2 sin2f ö ø

6 Class-C Conduction Φ is the conduction angle during which the current conducts through the transistor. What happens for Φ of pi or 2PI? I FUND = i æ PK ç p F - 1 è 2 sin2f ö ø James Buckwalter 6

7 Class-C Efficiency I DC = i PK ( sinf -FcosF) p h = P RF,MAX P DC = v PK i PK 2V DD I DC = æ çf - 1 sin 2F è 2 2 sin F ( ) ö ø ( ) - Fcos( F) ( ) As conduction angle approaches 0, the efficiency approaches 100%. What is the penalty? James Buckwalter 7

8 Class C Waveform Analysis Calculate efficiency h = i pk æ 1 v 2 PK i PK = 1 v pk p F sin2f ö ç è ø V DC I DC 2 V DC i pk sinf - FcosF p æ çf - 1 è 2 sin2f ö ø sinf - FcosF f ( q 0 ) = 1 2 ( ) h = V V FUND FUND,MAX f ( q 0 ) V FUND,MAX V DC ( ) = V pk V RF,MAX f ( q 0 ) V RF,MAX V DC h = P OUT V MAX -V MIN f ( q 0 ) P OUT,MAX V MAX +V MIN lim f q 0 ( q 0) =1 lim f ( q 0 ) = p 0 q 0 p 2 4 James Buckwalter 8

9 Power Amplifier Comparison James Buckwalter 9

10 Class-C Amplifier Efficiency Class C has very good efficiency because whenever the device has current, Vds is particularly low Vds ID Vrf time Idc time James Buckwalter 10

11 Class-C Waveform Analysis How about the loadline resistance? Iout Imax R L = V FUND I FUND Vmin Vmaxut V FUND = V MAX -V MIN 2 æ I FUND = I S q sin2q ö ç 0 è ø ( ) I MAX = I S - I O = I S 1- cosq 0 I FUND = I æ S p q sin2q ö ç 0 = I MAX è ø p R L = p V MAX -V MIN I MAX 1- cosq 0 q sin2q 0 q sin2q 0 1- cosq 0 RL / RL Class A Theta (degrees) James Buckwalter 11

12 Gain and Conduction Angle Gain (db) Class A Class AB "ideal" Class AB "real" 6dB Class B ideal Class B real Class C "real" Pin (dbm) James Buckwalter 12

13 Power Amplifier Comparison Maximum voltage swing is 2V o V min Gain is 6 db lower for class-b than class-a, expect it to be even lower than class-c. Power density is the same for class A and B but lower for class C. James Buckwalter 13

14 Other Classes of Amplifiers PA research is focused around getting highpower power at high-efficiency. Class D Amplifiers Push-pull style amplifier Class E/F Amplifiers Switching amplifiers which can allow 100% PAE but require care with harmonics Class J Amplifier Overdriven class-a James Buckwalter 14

15 CLASS F James Buckwalter 15

16 Class F Amplifier Add harmonic tuning to Class B amplifier Nominally open circuit at odd harmonics Short circuit at even harmonics (In reality, need to optimize for given transistor) V ds begins to look like a square wave match match Harmonic tuning 3fo fo RL RL James Buckwalter 16

17 Class F Amplifier With added 3rd harmonic V 3fo =1/9 V fo, V fo can reach the highest value without causing clipping I quiescent = 0 I dc =I ave = I rf / p P dc = V DD I ave h = 9 8 p 4 V max -V min V max +V min Iout Imax Vds Id Iave Vmin Vmax Vrf (?) time time James Buckwalter 17 ut

18 Class F Strategy Adding 3rd harmonic to voltage flattens its top and bottom, so it begins to approach a square wave With 3rd harmonic added, the fundamental can be increased at fixed signal swing (before clipping) Get even better results adding 5th harmonic James Buckwalter 18

19 Fourier Series Example /2 2/p = /2 Vfo / (/2) = 0.63/0.5 = 1.26: This is for perfect square wave (includes all odd harmonics) Vfo / (/2) ~ 9/8 = 1.125: This is just 3 rd harmonic time James Buckwalter 19

20 Class F Waveform Analysis Is there power delivered to load at 2f o? No, V 2fo =0 Is there power delivered to load at 3f o? No, I 3fo =0 Prf=1/2 Vfo Ifo= 1/4 Vfo Irf = 1/4 Irf*(Vmax-Vmin)/2 * 9/8 Pdc= Vdc Idc = Irf/p*(Vmax+Vmin)/2 Efficiency =p/4 *9/8*(Vmax-Vmin)/(Vmax+Vmin) 2 Waveforms of Transistor ltage(blue) and Current (black) Idc=Irf/p just as for Class B Ifo = Irf /2 just as for Class B Vfo= RL(fo) Ifo V, I angle (degrees) For Class F Vmax=Vdc+8/9 Vfo Vmin=Vdc- 8/9 Vfo Vfo=(Vmax-Vmin)/2*9/8 Vmax= Vdc+Vfo Vmin=Vdc-Vfo for class B James Buckwalter 20

21 Class F Amplifier Implementation: Accounting for Output Capacitance m1 freq= 1.096GHz S(1,1)=0.252 / impedance = Z0 * ( j0.509) m2 freq= 2.089GHz S(1,1)=1.000 / impedance = Z0 * (1.514E-7 - j7.444e-4) S(1,1) m2 m1 m3 m3 freq= 2.951GHz S(1,1)=0.998 / impedance = Z0 * ( j43.448) James Buckwalter 21 freq (100.0MHz to 10.00GHz)

22 Class F Amplifier Alternative Implementation Short at all harmonics here Zo=RL lo/4 match fo Z=RL at fo Z=0 at 2fo, 4fo Z=inf. at 3fo, 5fo,... RL James Buckwalter 22

23 Class F Example David Schmelzer and Stephen I. Long, CSICS 2006 GaN FETs at 2GHz Class F amplifier 86% PAE, 17W James Buckwalter 23

24 Harmonic Load Tuning X2=Im(Znet) at 2fo X3=Im(Znet) at 3fo Class F -1 Class F -1 Class F Class F Class B Znet Cds RL XL(f) James Buckwalter 24

25 Other Approaches for High-Efficiency Control the voltage and current waveforms to prevent conduction while the voltage Class D: Switch current and voltage Class E: ZVS and ZVS derivative switching Class F -1 James Buckwalter 25

OUTPHASING PA. James Buckwalter 1

OUTPHASING PA. James Buckwalter 1 OUTPHASING PA James Buckwalter 1 Average Efficiency We recognize the importance of average efficiency. However, PA design to now- has focused on peak efficiency. Other techniques should be developed to

More information

ECE 145A/218A Power Amplifier Design Lectures. Power Amplifier Design 1

ECE 145A/218A Power Amplifier Design Lectures. Power Amplifier Design 1 Power Amplifiers; Part 1 Class A Device Limitations Large signal output match Define efficiency, power-added efficiency Class A operating conditions Thermal resistance We have studied the design of small-signal

More information

Reciprocal Mixing: The trouble with oscillators

Reciprocal Mixing: The trouble with oscillators Reciprocal Mixing: The trouble with oscillators Tradeoffs in RX Noise Figure(Sensitivity) Distortion (Linearity) Phase Noise (Aliasing) James Buckwalter Phase Noise Phase noise is the frequency domain

More information

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +

More information

Advanced Current Mirrors and Opamps

Advanced Current Mirrors and Opamps Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 Wide-Swing Current Mirrors I bias I V I in out out = I in V W L bias ------------

More information

High-Efficiency Wideband Class-F Power Amplifier with Electronically Tunable Resonant Network

High-Efficiency Wideband Class-F Power Amplifier with Electronically Tunable Resonant Network Wright State University CORE Scholar Browse all Theses and Dissertations Theses and Dissertations 2015 High-Efficiency Wideband Class-F Power Amplifier with Electronically Tunable Resonant Network Alex

More information

ECE 546 Lecture 11 MOS Amplifiers

ECE 546 Lecture 11 MOS Amplifiers ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase

More information

Switching circuits: basics and switching speed

Switching circuits: basics and switching speed ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V

More information

Lecture 37: Frequency response. Context

Lecture 37: Frequency response. Context EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in

More information

ECE-305: Fall 2017 MOS Capacitors and Transistors

ECE-305: Fall 2017 MOS Capacitors and Transistors ECE-305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525-530, 563-599) Professor Peter Bermel Electrical and Computer Engineering Purdue

More information

S.E. Sem. III [ETRX] Electronic Circuits and Design I

S.E. Sem. III [ETRX] Electronic Circuits and Design I S.E. Sem. [ETRX] Electronic ircuits and Design Time : 3 Hrs.] Prelim Paper Solution [Marks : 80 Q.1(a) What happens when diode is operated at high frequency? [5] Ans.: Diode High Frequency Model : This

More information

ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction

ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction June 27, 2016 Sheikh Aamir Ahsan Sudip Ghosh Yogesh Singh Chauhan IIT Kanpur Sourabh Khandelwal UC Berkeley MA Long

More information

ESE319 Introduction to Microelectronics. Output Stages

ESE319 Introduction to Microelectronics. Output Stages Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class

More information

Modeling of Devices for Power Amplifier Applications

Modeling of Devices for Power Amplifier Applications Modeling of Devices for Power Amplifier Applications David E. Root Masaya Iwamoto John Wood Contributions from Jonathan Scott Alex Cognata Agilent Worldwide Process and Technology Centers Santa Rosa, CA

More information

CMOS Analog Circuits

CMOS Analog Circuits CMOS Analog Circuits L6: Common Source Amplifier-1 (.8.13) B. Mazhari Dept. of EE, IIT Kanpur 19 Problem statement : Design an amplifier which has the following characteristics: + CC O in R L - CC A 100

More information

Class E Design Formulas V DD

Class E Design Formulas V DD Class E Design Formulas V DD RFC C L+X/ω V s (θ) I s (θ) Cd R useful functions and identities Units Constants Table of Contents I. Introduction II. Process Parameters III. Inputs IV. Standard Class E Design

More information

OPERATIONAL AMPLIFIER ª Differential-input, Single-Ended (or Differential) output, DC-coupled, High-Gain amplifier

OPERATIONAL AMPLIFIER ª Differential-input, Single-Ended (or Differential) output, DC-coupled, High-Gain amplifier à OPERATIONAL AMPLIFIERS à OPERATIONAL AMPLIFIERS (Introduction and Properties) Phase relationships: Non-inverting input to output is 0 Inverting input to output is 180 OPERATIONAL AMPLIFIER ª Differential-input,

More information

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University

Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage (Source Follower) Claudio Talarico, Gonzaga University Common Drain Stage v gs v i - v o V DD v bs - v o R S Vv IN i v i G C gd C+C gd gb B&D v s vv OUT o + V S I B R L C L v gs - C

More information

Exercise 1: Capacitors

Exercise 1: Capacitors Capacitance AC 1 Fundamentals Exercise 1: Capacitors EXERCISE OBJECTIVE When you have completed this exercise, you will be able to describe the effect a capacitor has on dc and ac circuits by using measured

More information

Microwave Oscillators Design

Microwave Oscillators Design Microwave Oscillators Design Oscillators Classification Feedback Oscillators β Α Oscillation Condition: Gloop = A β(jω 0 ) = 1 Gloop(jω 0 ) = 1, Gloop(jω 0 )=2nπ Negative resistance oscillators Most used

More information

Note 11: Alternating Current (AC) Circuits

Note 11: Alternating Current (AC) Circuits Note 11: Alternating Current (AC) Circuits V R No phase difference between the voltage difference and the current and max For alternating voltage Vmax sin t, the resistor current is ir sin t. the instantaneous

More information

Homework Assignment 08

Homework Assignment 08 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance

More information

Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling.

Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Whites, EE 322 Lecture 23 Page 1 of 13 Lecture 23: NorCal 40A Power Amplifier. Thermal Modeling. Recall from the last lecture that the NorCal 40A uses a Class C power amplifier. From Fig. 10.3(b) the collector

More information

Critical parameters of

Critical parameters of Critical parameters of superconductors 2005-03-30 Why do this experiment? Superconductivity is a very interesting property from both commercial and basic scientific points of view. Superconductors are

More information

CHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS

CHAPTER 14 SIGNAL GENERATORS AND WAVEFORM SHAPING CIRCUITS CHAPTER 4 SIGNA GENERATORS AND WAEFORM SHAPING CIRCUITS Chapter Outline 4. Basic Principles of Sinusoidal Oscillators 4. Op Amp RC Oscillators 4.3 C and Crystal Oscillators 4.4 Bistable Multivibrators

More information

Alternating Current Circuits

Alternating Current Circuits Alternating Current Circuits AC Circuit An AC circuit consists of a combination of circuit elements and an AC generator or source. The output of an AC generator is sinusoidal and varies with time according

More information

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

INTEGRATED CIRCUITS. For a complete data sheet, please also download: INTEGRATED CIRCUITS DATA SHEET F a complete data sheet, please also download: The IC6 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC6 74HC/HCT/HCU/HCMOS Logic Package Infmation The IC6 74HC/HCT/HCU/HCMOS

More information

On the Phase Noise and Noise Factor in Circuits and Systems - New Thoughts on an Old Subject

On the Phase Noise and Noise Factor in Circuits and Systems - New Thoughts on an Old Subject On the Phase Noise and Noise Factor in Circuits and Systems - New Thoughts on an Old Subject Aleksandar Tasic QCT - Analog/RF Group Qualcomm Incorporated, San Diego A. Tasic 9 1 Outline Spectral Analysis

More information

KH600. 1GHz, Differential Input/Output Amplifier. Features. Description. Applications. Typical Application

KH600. 1GHz, Differential Input/Output Amplifier. Features. Description. Applications. Typical Application KH 1GHz, Differential Input/Output Amplifier www.cadeka.com Features DC - 1GHz bandwidth Fixed 1dB (V/V) gain 1Ω (differential) inputs and outputs -7/-dBc nd/3rd HD at MHz ma output current 9V pp into

More information

Introduction to CMOS RF Integrated Circuits Design

Introduction to CMOS RF Integrated Circuits Design V. Voltage Controlled Oscillators Fall 2012, Prof. JianJun Zhou V-1 Outline Phase Noise and Spurs Ring VCO LC VCO Frequency Tuning (Varactor, SCA) Phase Noise Estimation Quadrature Phase Generator Fall

More information

JFET Homework. Nov. 4, 2007, rev. Nov. 12, 2015

JFET Homework. Nov. 4, 2007, rev. Nov. 12, 2015 Nov. 4, 2007, rev. Nov. 12, 2015 These homework problems provide practice with analysis and design involving the most common type of JFET circuits. There is one problem for each type of circuit. Answers

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:

More information

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00

More information

SOME USEFUL NETWORK THEOREMS

SOME USEFUL NETWORK THEOREMS APPENDIX D SOME USEFUL NETWORK THEOREMS Introduction In this appendix we review three network theorems that are useful in simplifying the analysis of electronic circuits: Thévenin s theorem Norton s theorem

More information

SD2902. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2902. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs SD292 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - MHz WATTS 28 VOLTS 12. db MIN. AT 4 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION

More information

Trigonometry (Addition,Double Angle & R Formulae) - Edexcel Past Exam Questions. cos 2A º 1 2 sin 2 A. (2)

Trigonometry (Addition,Double Angle & R Formulae) - Edexcel Past Exam Questions. cos 2A º 1 2 sin 2 A. (2) Trigonometry (Addition,Double Angle & R Formulae) - Edexcel Past Exam Questions. (a) Using the identity cos (A + B) º cos A cos B sin A sin B, rove that cos A º sin A. () (b) Show that sin q 3 cos q 3

More information

At point G V = = = = = = RB B B. IN RB f

At point G V = = = = = = RB B B. IN RB f Common Emitter At point G CE RC 0. 4 12 0. 4 116. I C RC 116. R 1k C 116. ma I IC 116. ma β 100 F 116µ A I R ( 116µ A)( 20kΩ) 2. 3 R + 2. 3 + 0. 7 30. IN R f Gain in Constant Current Region I I I C F

More information

Self-heat Modeling of Multi-finger n-mosfets for RF-CMOS Applications

Self-heat Modeling of Multi-finger n-mosfets for RF-CMOS Applications Self-heat Modeling of Multi-finger n-mosfets for RF-CMOS Applications Hitoshi Aoki and Haruo Kobayashi Faculty of Science and Technology, Gunma University (RMO2D-3) Outline Research Background Purposes

More information

Bipolar junction transistors

Bipolar junction transistors Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma

More information

EECS 105: FALL 06 FINAL

EECS 105: FALL 06 FINAL University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 2-3:30 Wednesday December 13, 12:30-3:30pm EECS 105: FALL 06 FINAL NAME Last

More information

Advanced Analog Integrated Circuits. Operational Transconductance Amplifier I & Step Response

Advanced Analog Integrated Circuits. Operational Transconductance Amplifier I & Step Response Advanced Analog Integrated Circuits Operational Transconductance Amplifier I & Step Response Bernhard E. Boser University of California, Berkeley boser@eecs.berkeley.edu Copyright 2016 by Bernhard Boser

More information

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER: UNIT VII IASING & STAILIZATION AMPLIFIE: - A circuit that increases the amplitude of given signal is an amplifier - Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency

More information

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3

ECE 523/421 - Analog Electronics University of New Mexico Solutions Homework 3 ECE 523/42 - Analog Electronics University of New Mexico Solutions Homework 3 Problem 7.90 Show that when ro is taken into account, the voltage gain of the source follower becomes G v v o v sig R L r o

More information

DATA SHEET. HEF4067B MSI 16-channel analogue multiplexer/demultiplexer. For a complete data sheet, please also download: INTEGRATED CIRCUITS

DATA SHEET. HEF4067B MSI 16-channel analogue multiplexer/demultiplexer. For a complete data sheet, please also download: INTEGRATED CIRCUITS INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF,

More information

PHYS 1441 Section 001 Lecture #23 Monday, Dec. 4, 2017

PHYS 1441 Section 001 Lecture #23 Monday, Dec. 4, 2017 PHYS 1441 Section 1 Lecture #3 Monday, Dec. 4, 17 Chapter 3: Inductance Mutual and Self Inductance Energy Stored in Magnetic Field Alternating Current and AC Circuits AC Circuit W/ LRC Chapter 31: Maxwell

More information

Electronics II. Midterm II

Electronics II. Midterm II The University of Toledo f4ms_elct7.fm - Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm - Problem 7 points Given in

More information

F O R SOCI AL WORK RESE ARCH

F O R SOCI AL WORK RESE ARCH 7 TH EUROPE AN CONFERENCE F O R SOCI AL WORK RESE ARCH C h a l l e n g e s i n s o c i a l w o r k r e s e a r c h c o n f l i c t s, b a r r i e r s a n d p o s s i b i l i t i e s i n r e l a t i o n

More information

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

INTEGRATED CIRCUITS. For a complete data sheet, please also download: INTEGRATED CIRCUITS DATA SHEET F a complete data sheet, please also download: The IC6 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC6 74HC/HCT/HCU/HCMOS Logic Package Infmation The IC6 74HC/HCT/HCU/HCMOS

More information

An Angelov Large Signal Model and its Parameter Extraction Strategy for GaAs HEMT

An Angelov Large Signal Model and its Parameter Extraction Strategy for GaAs HEMT TSINGHUA UNIVERSITY An Angelov Large Signal Model and its Parameter Extraction Strategy for GaAs HEMT Yan Wang Wenyuan Zhang Tsinghua University Outline Motivation Large Signal Model Parameter Extraction

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 2

55:041 Electronic Circuits The University of Iowa Fall Exam 2 Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.

More information

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn

More information

Sample-and-Holds David Johns and Ken Martin University of Toronto

Sample-and-Holds David Johns and Ken Martin University of Toronto Sample-and-Holds David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 18 Sample-and-Hold Circuits Also called track-and-hold circuits Often needed in A/D converters

More information

Spectral Analysis of Noise in Switching LC-Oscillators

Spectral Analysis of Noise in Switching LC-Oscillators Spectral Analysis of Noise in Switching LC-Oscillators 71 Sub-Outline Duty Cycle of g m -cell Small-Signal Gain Oscillation Condition LC-Tank Noise g m -cell Noise Tail-Current Source Noise (Phase) Noise

More information

Chapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support

Chapter 3. FET Amplifiers. Spring th Semester Mechatronics SZABIST, Karachi. Course Support Chapter 3 Spring 2012 4 th Semester Mechatronics SZABIST, Karachi 2 Course Support humera.rafique@szabist.edu.pk Office: 100 Campus (404) Official: ZABdesk https://sites.google.com/site/zabistmechatronics/home/spring-2012/ecd

More information

Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation

Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation Text sec 1.2 pp. 28-32; sec 3.2 pp. 128-129 Current source Ideal goal Small signal model: Open

More information

PO3B20A. High Bandwidth Potato Chip

PO3B20A. High Bandwidth Potato Chip FEATURES: Patented technology High signal -3db passing bandwidth at 1.6GHz Near-Zero propagation delay CC = 1.65 to 3.6 Ultra-Low Quiescent Power: 0.1 A typical Ideally suited for low power applications

More information

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011 Basic Electronics Introductory Lecture Course for Technology and Instrumentation in Particle Physics 2011 Chicago, Illinois June 9-14, 2011 Presented By Gary Drake Argonne National Laboratory Session 2

More information

Chapter 3 Output stages

Chapter 3 Output stages Chapter 3 utput stages 3.. Goals and properties 3.. Goals and properties deliver power into the load with good efficacy and small power dissipate on the final transistors small output impedance maximum

More information

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

Lecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output

More information

EXP. NO. 3 Power on (resistive inductive & capacitive) load Series connection

EXP. NO. 3 Power on (resistive inductive & capacitive) load Series connection OBJECT: To examine the power distribution on (R, L, C) series circuit. APPARATUS 1-signal function generator 2- Oscilloscope, A.V.O meter 3- Resisters & inductor &capacitor THEORY the following form for

More information

PO3B14A. Description. Truth Table. High Bandwidth Potato Chip V CC N.C. EN EN S 1 A 3 B 3 B 2 A 2 A 1 B 1 Y A Y B GND

PO3B14A. Description. Truth Table. High Bandwidth Potato Chip V CC N.C. EN EN S 1 A 3 B 3 B 2 A 2 A 1 B 1 Y A Y B GND www.potatosemi.com FEATURES: Patented technology High signal -3db passing bandwidth at 1.2GHz Near-Zero propagation delay VCC = 1.65V to 3.6V Ultra-Low Quiescent Power: 0.1 A typical Ideally suited for

More information

Exact Analysis of a Common-Source MOSFET Amplifier

Exact Analysis of a Common-Source MOSFET Amplifier Exact Analysis of a Common-Source MOSFET Amplifier Consider the common-source MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel

More information

Chapter 11 AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode

Chapter 11 AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode Chapter 11 AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode Introduction 11.1. DCM Averaged Switch Model 11.2. Small-Signal AC Modeling of the DCM Switch Network 11.3. High-Frequency

More information

Lecture 4, Noise. Noise and distortion

Lecture 4, Noise. Noise and distortion Lecture 4, Noise Noise and distortion What did we do last time? Operational amplifiers Circuit-level aspects Simulation aspects Some terminology Some practical concerns Limited current Limited bandwidth

More information

Prof. Anyes Taffard. Physics 120/220. Voltage Divider Capacitor RC circuits

Prof. Anyes Taffard. Physics 120/220. Voltage Divider Capacitor RC circuits Prof. Anyes Taffard Physics 120/220 Voltage Divider Capacitor RC circuits Voltage Divider The figure is called a voltage divider. It s one of the most useful and important circuit elements we will encounter.

More information

ECEN 326 Electronic Circuits

ECEN 326 Electronic Circuits ECEN 326 Electronic Circuits Frequency Response Dr. Aydın İlker Karşılayan Texas A&M University Department of Electrical and Computer Engineering High-Frequency Model BJT & MOS B or G r x C f C or D r

More information

ET4119 Electronic Power Conversion 2011/2012 Solutions 27 January 2012

ET4119 Electronic Power Conversion 2011/2012 Solutions 27 January 2012 ET4119 Electronic Power Conversion 2011/2012 Solutions 27 January 2012 1. In the single-phase rectifier shown below in Fig 1a., s = 1mH and I d = 10A. The input voltage v s has the pulse waveform shown

More information

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

INTEGRATED CIRCUITS. For a complete data sheet, please also download: INTEGRATED CIRCUITS DATA SHEET F a complete data sheet, please also download: The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications The IC06 74HC/HCT/HCU/HCMOS Logic Package Infmation The IC06 74HC/HCT/HCU/HCMOS

More information

Chapter7. FET Biasing

Chapter7. FET Biasing Chapter7. J configurations Fixed biasing Self biasing & Common Gate Voltage divider MOS configurations Depletion-type Enhancement-type JFET: Fixed Biasing Example 7.1: As shown in the figure, it is the

More information

Chapter 21: RLC Circuits. PHY2054: Chapter 21 1

Chapter 21: RLC Circuits. PHY2054: Chapter 21 1 Chapter 21: RC Circuits PHY2054: Chapter 21 1 Voltage and Current in RC Circuits AC emf source: driving frequency f ε = ε sinωt ω = 2π f m If circuit contains only R + emf source, current is simple ε ε

More information

Section 1: Common Emitter CE Amplifier Design

Section 1: Common Emitter CE Amplifier Design ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open

More information

Volterra Series: Introduction & Application

Volterra Series: Introduction & Application ECEN 665 (ESS : RF Communication Circuits and Systems Volterra Series: Introduction & Application Prepared by: Heng Zhang Part of the material here provided is based on Dr. Chunyu Xin s dissertation Outline

More information

Electronic Circuits Summary

Electronic Circuits Summary Electronic Circuits Summary Andreas Biri, D-ITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent

More information

Department of Electrical Engineering and Computer Sciences University of California, Berkeley. Final Exam Solutions

Department of Electrical Engineering and Computer Sciences University of California, Berkeley. Final Exam Solutions Electrical Engineering 42/00 Summer 202 Instructor: Tony Dear Department of Electrical Engineering and omputer Sciences University of alifornia, Berkeley Final Exam Solutions. Diodes Have apacitance?!?!

More information

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom ID # NAME EE-255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.

More information

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University

EE 466/586 VLSI Design. Partha Pande School of EECS Washington State University EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time

More information

Electronics II. Final Examination

Electronics II. Final Examination The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11

More information

E40M. RC Circuits and Impedance. M. Horowitz, J. Plummer, R. Howe

E40M. RC Circuits and Impedance. M. Horowitz, J. Plummer, R. Howe E40M RC Circuits and Impedance Reading Reader: Chapter 6 Capacitance (if you haven t read it yet) Section 7.3 Impedance You should skip all the parts about inductors We will talk about them in a lecture

More information

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto

Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto Switched-Capacitor Circuits David Johns and Ken Martin University of Toronto (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) University of Toronto 1 of 60 Basic Building Blocks Opamps Ideal opamps usually

More information

Biasing the CE Amplifier

Biasing the CE Amplifier Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC base-emitter voltage (note: normally plot vs. base current, so we must return to Ebers-Moll): I C I S e V BE V th I S e V th

More information

Structured Electronic Design. Building the nullor: Distortion

Structured Electronic Design. Building the nullor: Distortion Structured Electronic Design Building the nullor: Distortion 1 Specs 1 N verification Topology Best nullor implementation Voltage and current swing Power consumption FINAL Noise level All stages maximal

More information

Lecture 04: Single Transistor Ampliers

Lecture 04: Single Transistor Ampliers Lecture 04: Single Transistor Ampliers Analog IC Design Dr. Ryan Robucci Department of Computer Science and Electrical Engineering, UMBC Spring 2015 Dr. Ryan Robucci Lecture IV 1 / 37 Single-Transistor

More information

MOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA

MOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the Field-Effect Transistor! Julius Lilienfeld filed a patent describing

More information

Chapter 13 Small-Signal Modeling and Linear Amplification

Chapter 13 Small-Signal Modeling and Linear Amplification Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 13-1 Chapter Goals Understanding of concepts related to: Transistors

More information

Power Dissipation. Where Does Power Go in CMOS?

Power Dissipation. Where Does Power Go in CMOS? Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit

More information

Simulation of the Temperature Influence in IC-EMC

Simulation of the Temperature Influence in IC-EMC Simulation of the Temperature Influence in IC-EMC E. Sicard INSA-GEI, 135 Av de Rangueil 31077 Toulouse France Contact : etienne.sicard@insa-toulouse.fr web site : www.ic-emc.org Abstract: We investigate

More information

Digital Integrated Circuits A Design Perspective

Digital Integrated Circuits A Design Perspective igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational

More information

COMBINATIONAL LOGIC. Combinational Logic

COMBINATIONAL LOGIC. Combinational Logic COMINTIONL LOGIC Overview Static CMOS Conventional Static CMOS Logic Ratioed Logic Pass Transistor/Transmission Gate Logic Dynamic CMOS Logic Domino np-cmos Combinational vs. Sequential Logic In Logic

More information

Chapter 10 Conics, Parametric Equations, and Polar Coordinates Conics and Calculus

Chapter 10 Conics, Parametric Equations, and Polar Coordinates Conics and Calculus Chapter 10 Conics, Parametric Equations, and Polar Coordinates 10.1 Conics and Calculus 1. Parabola A parabola is the set of all points x, y ( ) that are equidistant from a fixed line and a fixed point

More information

Monolithic Microwave Integrated Circuits

Monolithic Microwave Integrated Circuits SMA5111 - Compound Semiconductors Lecture 10 - MESFET IC Applications - Outline Left over items from Lect. 9 High frequency model and performance Processing technology Monolithic Microwave Integrated Circuits

More information

TPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

TPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter

More information

Circuit Topologies & Analysis Techniques in HF ICs

Circuit Topologies & Analysis Techniques in HF ICs Circuit Topologies & Analysis Techniques in HF ICs 1 Outline Analog vs. Microwave Circuit Design Impedance matching Tuned circuit topologies Techniques to maximize bandwidth Challenges in differential

More information

Systematic Design of Operational Amplifiers

Systematic Design of Operational Amplifiers Systematic Design of Operational Amplifiers Willy Sansen KULeuven, ESAT-MICAS Leuven, Belgium willy.sansen@esat.kuleuven.be Willy Sansen 10-05 061 Table of contents Design of Single-stage OTA Design of

More information

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder Sampled-data response: i L /i c Sampled-data transfer function : î L (s) î c (s) = (1 ) 1 e st

More information

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1

Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 Lecture 310 Open-Loop Comparators (3/28/10) Page 310-1 LECTURE 310 OPEN-LOOP COMPARATORS LECTURE ORGANIZATION Outline Characterization of comparators Dominant pole, open-loop comparators Two-pole, open-loop

More information

Chapter 9 Objectives

Chapter 9 Objectives Chapter 9 Engr8 Circuit Analysis Dr Curtis Nelson Chapter 9 Objectives Understand the concept of a phasor; Be able to transform a circuit with a sinusoidal source into the frequency domain using phasor

More information

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics Lena Peterson 2015-10-13 Outline (1) Why is the CMOS inverter gain not infinite? Large-signal

More information

Lecture 21. Resonance and power in AC circuits. Physics 212 Lecture 21, Slide 1

Lecture 21. Resonance and power in AC circuits. Physics 212 Lecture 21, Slide 1 Physics 1 ecture 1 esonance and power in A circuits Physics 1 ecture 1, Slide 1 I max X X = w I max X w e max I max X X = 1/w I max I max I max X e max = I max Z I max I max (X -X ) f X -X Physics 1 ecture

More information

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution ECE-342 Test 3: Nov 30, 2010 6:00-8:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown

More information

ECE 415/515 ANALOG INTEGRATED CIRCUIT DESIGN

ECE 415/515 ANALOG INTEGRATED CIRCUIT DESIGN ECE 415/515 ANALOG INTEGRATED CIRCUIT DESIGN CMOS PROCESS CHARACTERIZATION VISHAL SAXENA VSAXENA@UIDAHO.EDU Vishal Saxena DESIGN PARAMETERS Analog circuit designers care about: Open-loop Gain: g m r o

More information