ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction
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1 ASM-HEMT Model for GaN RF and Power Electronic Applications: Overview and Extraction June 27, 2016 Sheikh Aamir Ahsan Sudip Ghosh Yogesh Singh Chauhan IIT Kanpur Sourabh Khandelwal UC Berkeley MA Long Keysight Technologies
2 Contents MOS-AK Workshop Shanghai 2016 Page 2 ASM-HEMT Model Overview Parameter Extraction DC Model Field Plate Capacitance Model RF Small Signal Model Summary
3 GaN HEMT Model Standardization Effort in CMC Compact Model Coalition an industry body that standardizes and promotes SPICE models for semiconductor devices as well as compiled modeling interface Dedicated workgroup for GaN HEMT model standardization launched in Year 2011 Standardization process Phase I completed: solicitation of models and presentation to CMC. Phase II completed: shortlisted candidate models being examined against fundamental requirements and being fitted to measurement data for CMC evaluation Phase III is ongoing: evaluation on runtime, convergence, operability, etc. - ASM-HEMT - MVSG Phase IV: ballot for standardization (targeting at the end of 2016) * Compact Model Coalition, * Keith Green, MOS-AK Workshop Shanghai 2016 Page 3
4 ASM-HEMT Model Overview n s = DV th ln exp E f E 0 V th ln exp E f E 1 V th + 1 E 0 = γ 0 n s 2/3 E1 = γ 1 n s 2/3 n s = ε qd V go E f V x Transcendental E f,unified = V go ψ = E f + V x 2V th ln 1 + e 1 H V go, p + C g V go 2V th qd e V go 2V th MOS-AK Workshop Shanghai 2016 Page 4
5 ASM HEMT Model Overview Intrinsic Charges Incorporating Realistic device effects MOS-AK Workshop Shanghai 2016 Page 5
6 List of Parameters I Core Model Parameters I I I I MOS-AK Workshop Shanghai 2016 Page 6
7 List of Parameters II Access Region and Temperature Parameters I I I MOS-AK Workshop Shanghai 2016 Page 7
8 Parameter Extraction I Id-Vg Linear and Log Scale (Linear Vd Condition) NFACTOR VOFF ETA0 VDSCALE CDSCD U0 Id-Vgs (Linear) Id-Vgs (Log) Id-Vgs (Linear) MOS-AK Workshop Shanghai 2016 Page 8
9 Parameter Extraction II Id-Vgs, gm-vgs and Id-Vds, gds-vds Adjust Ron using NS0ACCS NS0ACCD MOS-AK Workshop Shanghai 2016 Page 9
10 Parameter Extraction III Id-Vgs, gm-vgs and Id-Vds, gds-vds Fit Saturation Current by adjusting VSATACCS VSAT should remain more or less the same since it is a material dependent parameter and should not vary much for different GaN Technologies MOS-AK Workshop Shanghai 2016 Page 10
11 Parameter Extraction IV Id-Vgs, gm-vgs and Id-Vds, gds-vds Fine tune Contact Resistance parameters RDC RSC To further fit the Ron MOS-AK Workshop Shanghai 2016 Page 11
12 Self Heating and Temperature Related Parameters RTH0 KT1 AT ATS KRSC KRDC UTE MOS-AK Workshop Shanghai 2016 Page 12
13 Field Plate Capacitance Model Terminal Capacitances Ciss = Cgs + Cgd Crss = Cgd Coss = Cds + Cgd FP Modeled as an intrinsic HEMT Each HEMT governed by ψ Calc. MOS-AK Workshop Shanghai 2016 Page 13
14 Field Plate MOD Parameter Extraction I Ciss Vgs -150V < Vgs < 0V Vds = 0 Crss, Ciss, Coss versus Vds 0V < Vds < 300V Vgs = -15V GFPMOD = SFPMOD = 1 Ciss Vgs CFG Crss Vds Ciss Vds CFG Coss Vds CFD MOS-AK Workshop Shanghai 2016 Page 14
15 Field Plate MOD Parameter Extraction II VOFFGFP sets the rise of the hump ADOS Smoothens the hump VOFFGFP CFGD CFGD0 Gate FP - Drain Fringing capacitance CFGD CFGD0 MOS-AK Workshop Shanghai 2016 Page 15
16 Field Plate MOD Parameter Extraction III Optimize the following AJ CJ0 MZ VBI AJ, CJ0, MZ, VBI CFD MOS-AK Workshop Shanghai 2016 Page 16
17 ASM HEMT - Small Signal Representation Y 11 = 2 Rg jω C gs + C gd 1 + ω 2 2 C gs + C + ω2 C gs + C gd 2 gd Rg 1 + ω C gs + C gd Rg g R g C gd d Y 12 = jωc gd ω 2 C gd (C gs + C gd )R g C gs C ds g m g ds Y 21 = g m ω 2 C gd C gs + C gd R g jω C gd + g m C gs + C gd R g Y 22 = g ds + jω C ds + C gd (1 + g m R g ) s ASM-HEMT MOS-AK Workshop Shanghai 2016 Page 17
18 De-embedded Y-Parameters ( GHz) imag Y 11 C gs + C gd imag Y 12 C gd imag Y 22 C ds real Y 21 g m real Y 22 g ds MOS-AK Workshop Shanghai 2016 Page 18
19 Broadband S-Parameters ( GHz) Y 11 S 11 S 12 Y 12 Y 21 S 21 S 22 Y 22 Real Imag MOS-AK Workshop Shanghai 2016 Page 19
20 Load-Pull and Harmonic Balance Simulations P out Gain Contours Pout Measured Model PAE I dd Contours PAE MOS-AK Workshop Shanghai 2016 Page 20
21 Summary As one of the candidates for CMC GaN HEMT, ASM-HEMT is a physical model base on surface potential analytical calculation Model extraction procedure DC parameter extraction Focused on key parameters Model field plate as a transistor and perform capacitance parameter extraction RF modeling - Broadband S-Parameters and Y-Parameters - Large signal load pull and harmonic balance power sweeps The model is developed by using Keysight s IC-CAP and ADS software. Good fitting is achieved with industry measured data. MOS-AK Workshop Shanghai 2016 Page 21
22 References S. Khandelwal, Y. S. Chauhan, and T. A. Fjeldly, Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices, IEEE Trans. Electron Devices, vol. 59, no. 10, pp , Oct S. Khandelwal, et al., Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design, IEEE Trans. Electron Devices, vol. 60, no. 10, pp , Oct S. A. Ahsan, et al., Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior, IEEE Trans. Electron Devices, vol. 63, no. 2, pp , Feb S. Khandelwal, et al., Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs, Proc. IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), pp. 1-4, S. Ghosh et al., Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs, IEEE TED, vol. 62, no. 2, 2015 MOS-AK Workshop Shanghai 2016 Page 22
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