TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D

Transcription

1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance: Y fs =. S (typ.) Low leakage current: I DSS = μa (max) (V DS = V) Enhancement mode: V th =. to. V (V DS = V, I D = ma) Ф. ±. ±. A..9. ±..7 ±.. ±. Absolute Maximum Ratings (Ta = C).9 ±. Ф. M A. MAX. ±. Characteristics Symbol Rating Unit Drain-source voltage V DSS V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (t = ms) (Note ) I DP Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg to C A. ±.. : Gate : Drain : Source JEDEC JEITA TOSHIBA Weight:.7 g (typ.).. ±. SC-7 -UB. ±. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed. Note : V DD = 9 V, T ch = C (initial), L =. mh, R G = Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. --

2 TKAD Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± μa Drain cut-off current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON resistance R DS (ON) V GS = V, I D = A.. Ω Forward transfer admittance Y fs V DS = V, I D = A.. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V I D = A V OUT V GS V Turn-on time t on Switching time Ω R L = 7 Ω Fall time t f V DD V Turn-off time t off Duty %, t w = μs Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D = A Gate-drain charge Q gd pf ns nc Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V.7 V Reverse recovery time t rr I DR = A, V GS = V, ns Reverse recovery charge Q rr di DR /dt = A/μs μc Marking Note : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] KAD Part No. (or abbreviation code) Lot No. Note Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive /9/EC of the European Parliament and of the Council of 7 January on the restriction of the use of certain hazardous substances in electrical and electronic equipment. --

3 TKAD Tc = C I D V DS VGS = V. Tc = C I D V DS VGS = V Drain-source voltage VDS Drain-source voltage VDS Forward transfer admittance Yfs (S) VDS = V VDS = V Tc = C.. I D V GS Gate-source voltage VGS Tc = C Drain-source ON resistance RDS (ON) (Ω) Drain-source voltage VDS V DS V GS ID = A Gate-source voltage VGS Y fs I D R DS (ON) I D VGS = V Tc = C Tc = C... --

4 TKAD Drain-source ON resistance RDS(ON) (Ω) VGS = V R DS (ON) Tc ID =. A Drain reverse current IDR (A) Tc = C I DR V DS.. VGS = V..9.. Drain-source voltage VDS Capacitance V DS V th Tc Capacitance C (pf) VGS = V f =MHz Tc = C. Ciss Coss Crss Gate threshold voltage Vth VDS = V ID = ma Drain-source voltage VDS P D Tc Dynamic input / output characteristics Drain power dissipation PD (W) Drain-source voltage VDS VDS VDD = V VGS ID = A Tc = C Gate-source voltage VGS Total gate charge Qg (nc) --

5 TKAD Normalized transient thermal impedance rth (t)/rth (ch-c) Duty=... r th t w SINGLE PULSE PDM.... t T Duty = t/t Rth (ch-c) =.7 C/W Pulse width t w (s) SAFE OPERATING AREA E AS T ch. ID max (pulse) * ID max (continuous) DC operation Tc = C ms * μs * Avalanche energy EAS (mj) 7. * Single pulse Tc= C Channel temperature (initial) T ch ( C) Curves must be derated linearly with increase in temperature... VDSS max Drain-source voltage V DS V V B VDSS I AR V DD V DS Test circuit RG = Ω V DD = 9 V, L =. mh Waveform = BVDSS ΕAS L I BVDSS VDD --