SD2902. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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1 SD292 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - MHz WATTS 28 VOLTS 12. db MIN. AT 4 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD292 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to MHz M113 epoxy sealed ORDER CODE SD292 BRANDING SD292 PIN CONNECTION 1. Drain 3.Gate 2. Source 4. Source ABSOLUTE MAXIMUM RATINGS (T case = 2 o C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 6 V V DGR Drain-Gate Voltage (R GS = 1MΩ) 6 V VGS Gate-Source Voltage ± V I D Drain Current 2. A PDISS Power Dissipation 8.3 W T j Max. Operating Junction Temperature TSTG Storage Temperature -6 to o C o C THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 3..3 * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 34 or equivalent). o C/W o C/W November /8

2 ELECTRICAL SPECIFICATION (Tcase = 2 o C) STATIC Symbol Parameter Min. Typ. Max. Unit V (BR)DSS V GS = V I DS = ma 6 V I DSS V GS = V V DS = 28 V 1. ma I GSS V GS = V V DS = V 1. µa V GS(Q) V DS = V I D = 3 ma V V DS(ON) V GS = V I D = 1. A 1.6 V g FS V DS = V I D = 1. A.6 mho C ISS V GS = V V DS = 28 V f = 1 MHz 23 pf C OSS V GS = V V DS = 28 V f = 1 MHz 18 pf C RSS V GS = V V DS = 28 V f = 1 MHz 3. pf REF. 2138K DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT V DD = 28 V I DQ = 2 ma W G PS V DD = 28 V P out = W I DQ = 2 ma db η D V DD = 28 V P out = W I DQ = 2 ma 4 % Load Mismatch V DD = 28 V P out = W I DQ = 2 ma All Angles :1 VSWR IMPEDANCE DATA FREQ. ZIN (Ω) ZDL (Ω) 4 MHz j j 2/8

3 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temperature GC GC8294 f = 1 MHz C, CAPACITANCES (pf) Ciss Coss Crss RTH(j-c) (ºC/W) VDS. DRAIN-SOURCE VOLTAGE (VOLTS) Tc, CASE TEMPERATURE (ºC) Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature ID, DRAIN CURRENT (A) VDS = V T = 2 C T = - C GC829 T = 8 C VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) VDD = V ID =3 A ID = 2 ma GC8296 ID = 2 A ID = 1.2 A ID = ma Tc, CASE TEMPERATURE (ºC) 3/8

4 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power 2 Vdd = 28 V GC GC83 Tc= 2 C Vdd = 13. V 2 VDD = 28 V T = 2º C T = -ºC T = 8ºC Pin, INPUT POWER (W) Pin, INPUT POWER (W) Output Power vs Voltage Supply Output Power vs Gate Voltage Pout, OUTPUT POWER (WATTS) 2 Pin = 1.6 W GC8299 Pin =.8 W Pin =.4 W VDD, SUPPLY VOLTAGE (VOLTS) VDD = 28 V Pin = Constant T = 2 C T = - C T = 8 C GC VGS, GATE-SOURCE VOLTAGE (VOLTS) Power Gain vs Output Power Efficiency vs Output Power GC83 7 GC83 PG, POWER GAIN (db) Tc= 2 C EFFICIENCY (%) Tc= 2 C /8

5 4 MHz Test Circuit Schematic 4 MHz Test Circuit Component Part List /8

6 4 MHz Test Circuit Photomaster REF B Production Test Fixture 6/8

7 M113 (.38 DIA 4/L N/HERM W/FLG) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F G H I J K Controlling Dimension: Inches 936D 7/8

8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8

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