Timing Analysis in Presence of Supply Voltage and Temperature Variations
|
|
- Meredith Manning
- 6 years ago
- Views:
Transcription
1 Timing Analysis in Presence of Supply Voltage and Temperature Variations Benoît Lasbouygues, Robin Wilson STMicroelectronics, Crolles France Nadine Azemard, Philippe Maurine LIRMM, Montpellier France
2 Motivation Delay is strongly dependent on supply voltage +10% Vdd, induce > +20% delay WC/BC drop ±10% of V, is it accurate? Temperature sensitivity depends on domains Function of process and supply voltage value 15 Timing (125 C-m40 C) Timing (125 C) 0 (%) -15 0,8 0,9 1 1,1 1,2 V (V) -30 Temperature Inversion Possibility to reduce margins T. independent 2
3 Our goal Reduced margins using real V, T values for each cell Avoid over-design or re-design steps How? Using Vdrop and T. Gradient maps Non-linear timing derating for each instance 3
4 How? Manage Vdd and θ at cell level? Popular K-factor method Voltage Temperature Delay Do + D V V D + θ θ From a standard corner analysis we estimate timing for any Voltage and Temperature value Best case Worst case Temperature Voltage Process Silicon 4
5 Problem How to define accurately scaling factors? Delay Do + D V V D + θ θ?? Linear function not enough accurate Polynomial template not enough accurate on large range of V and T. Scaling must follow physical behavior 5
6 Sensitivity analysis outhl V τ ( ps / V ) Derating factor must characterized: V (V ) ) Slow and domains Design dependence τ IN ( ps Input slope "0.092, 0.247, 0.553, 1.172", \ "0.093, 0.247, 0.556, 1.172", \ "0.103, 0.258, 0.557, 1.166", \ "0.134, 0.275, 0.556, 1.173", \ "0.194, 0.344, 0.597, 1.176" ); Output Capacitance Transition Time LUT 6
7 Analytical Timing Model Slope Modeling the transistor as a current generator τ out CL V I MAX Depending on the input range value input domain: saturation current τ out DW C K W ( V V ) α Slow input domain: current function of slope τ Slow out L V α DW CL τ IN V α K W T 1 α 1 1+ α 7
8 Analytical Timing Model Delay Propagation Delay is strongly dependent on: Input slew Output Load Gate size I/O coupling capacitance (Miller effect) t τ IN α 1 α V + V T CM C + C M L τ 2 out 8
9 Analytical Timing Model Temperature Supply voltage value appears explicitly Temperature acts on Threshold Voltage and Mobility V T V Tnom δ τ out ( θ θ ) nom θ K θ nom τ in α 1 V t α X K W T K K DW C nom θ θ nom X K ( V V + δ ( θ θ )) α δ V L T ( θ θ ) nom nom 2CM + 1+ CM + C L τ 2 out 9
10 Derating Coefficient - V From analytical model, We derate formulas with respect to V We extract design dependency For slope in fast input domain, ( 1 α) τ out DW CL V V V K W ( V V ) T 1+ α T Becomes τ V Slope 2 Slope 2 a, b are V independent parameters to be calibrated OUT a V b + V C L 10
11 Derating Coefficient Temperature Temperature Template t θ a Delay + b Delay τ IN + c Delay C L τ INinv a INV + b INV C L 900 Delay (ps) C -40 C C L 120fF 300 C L 64fF 0 C L 4fF Input Slope ( ps)
12 Derating Coefficient Constraint Setup and Hold: Race between Clock and Data paths. CPN Clock C1 C2 CPI Setup (D1+D2+D3) C1 CPI Data D1 D2 D3 CPN CPN Ignore Load sensitivity, keep only slope variation CPI Setup θ a Setup + b Setup τ Data + c Setup τ Clock 12
13 Validation Standard cell Template are fitted with 3 corners (1 ref., 1 for Vdd, 1 for T) Corner computed for an entire library with derating factor Comparison: scaling values versus electrical simulations Simulation vs Derating (%) % Ref. -5 0% -10-5% 1.1 V (V) Temperature ( C) 13
14 Application - Chip level Derating on Slope Slope file (~ SDF) 1 timing update with new slope Compute delay With new slope New SDF is available (delay can be scaled using internal developed tool) Final annotation is done Derating on Delay Final SDF 14
15 Application Chip level Chip Vdrop map Timing Analysis with Vdrop data From a worst case corner, we update delay with Vdrop maps. We compute each Slope and Delay derating (cell by cell) IP Vdrop map Comparison :TA with (Vdd 10%) Versus :TA with Vdrop Data 15
16 Path Delay (ns) Results 2,50 Comparison Spice/WC/Derating Margin gain :9 to 12% ~200ps 2,25 9% 12% 2,00 1,75 2% accuracy Worst case timing Derating analysis Spice analysis Path # 16
17 Summary We propose a method to handle Temperature/V variations based on cell by cell scaling factor These deratings are non-linear and function of design conditions Taking account Vdrop in TA, highlights a significant gain in margin versus standard worst case method. Voltage Derating could be also used to validate Dynamic Voltage, Multi-Voltage feature Method has demonstrated for precise Temperature effects such as Temperature inversion and can be used to characterize hot spots. 17
18 Thank you!! 18
Physical Extension of the Logical Effort Model
Physical Extension of the Logical Effort Model B. Lasbouygues, R. Wilson, P. Maurine,. Azémard, and D. Auvergne STMicroelectronics Design Department 850 rue J. Monnet, 3896, rolles, France {benoit.lasbouygues,robin.wilson}@st.com
More informationPhysical Design of Digital Integrated Circuits (EN0291 S40) Sherief Reda Division of Engineering, Brown University Fall 2006
Physical Design of Digital Integrated Circuits (EN0291 S40) Sherief Reda Division of Engineering, Brown University Fall 2006 1 Lecture 04: Timing Analysis Static timing analysis STA for sequential circuits
More informationCSE241 VLSI Digital Circuits Winter Lecture 07: Timing II
CSE241 VLSI Digital Circuits Winter 2003 Lecture 07: Timing II CSE241 L3 ASICs.1 Delay Calculation Cell Fall Cap\Tr 0.05 0.2 0.5 0.01 0.02 0.16 0.30 0.5 2.0 0.04 0.32 0.178 0.08 0.64 0.60 1.20 0.1ns 0.147ns
More informationDelay Modelling Improvement for Low Voltage Applications
Delay Modelling Improvement for Low Voltage Applications J.M. Daga, M. Robert and D. Auvergne Laboratoire d Informatique de Robotique et de Microélectronique de Montpellier LIRMM UMR CNRS 9928 Univ. Montpellier
More informationSTATIC TIMING ANALYSIS
STATIC TIMING ANALYSIS Standard Cell Library NanGate 45 nm Open Cell Library Open-source standard cell library Over 62 different functions ranging from buffers, to scan-able FFs with set and reset, to
More informationLecture 4: DC & Transient Response
Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide
More informationStatistical Gate Delay Model for Multiple Input Switching. Takayuki Fukuoka, Akira Tsuchiya and Hidetoshi Onodera Kyoto University
Statistical Gate Delay Model for Multiple Input Switching Takayuki Fukuoka, Akira Tsuchiya and Hidetoshi Onodera Kyoto University 1 Outline Motivation Effect of Multiple Input Switching on the gate delay
More informationEECS 151/251A Homework 5
EECS 151/251A Homework 5 Due Monday, March 5 th, 2018 Problem 1: Timing The data-path shown below is used in a simple processor. clk rd1 rd2 0 wr regfile 1 0 ALU REG 1 The elements used in the design have
More information9/18/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design
More informationProperties of CMOS Gates Snapshot
MOS logic 1 Properties of MOS Gates Snapshot High noise margins: V OH and V OL are at V DD and GND, respectively. No static power consumption: There never exists a direct path between V DD and V SS (GND)
More informationDigital Integrated Circuits A Design Perspective
igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational
More informationEE5780 Advanced VLSI CAD
EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Elad Alon Homework #9 EECS141 PROBLEM 1: TIMING Consider the simple state machine shown
More informationSimulation of the Temperature Influence in IC-EMC
Simulation of the Temperature Influence in IC-EMC E. Sicard INSA-GEI, 135 Av de Rangueil 31077 Toulouse France Contact : etienne.sicard@insa-toulouse.fr web site : www.ic-emc.org Abstract: We investigate
More informationCARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING DIGITAL INTEGRATED CIRCUITS FALL 2002
CARNEGIE MELLON UNIVERSITY DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 18-322 DIGITAL INTEGRATED CIRCUITS FALL 2002 Final Examination, Monday Dec. 16, 2002 NAME: SECTION: Time: 180 minutes Closed
More informationNext, we check the race condition to see if the circuit will work properly. Note that the minimum logic delay is a single sum.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences Last modified on May 1, 2003 by Dejan Markovic (dejan@eecs.berkeley.edu) Prof. Jan Rabaey EECS
More informationVLSI Circuit Design (EEC0056) Exam
Mestrado Integrado em Engenharia Eletrotécnica e de omputadores VLSI ircuit esign (EE0056) Exam 205/6 4 th year, 2 nd sem. uration: 2:30 Open notes Note: The test has 5 questions for 200 points. Show all
More informationStep 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since
Step 1. Finding V M Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since V DSn = V M - 0 > V M - V Tn V SDp = V DD - V M = (V DD - V M ) V Tp Equate drain
More informationECE 342 Electronic Circuits. Lecture 35 CMOS Delay Model
ECE 34 Electronic Circuits Lecture 35 CMOS Delay Model Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More informationDELAYS IN ASIC DESIGN
DELAYS IN ASIC DESIGN We encounter several types of delays in ASIC design. They are as follows: Gate delay or Intrinsic delay Net delay or Interconnect delay or Wire delay or Extrinsic delay or Flight
More informationSpiral 2 7. Capacitance, Delay and Sizing. Mark Redekopp
2-7.1 Spiral 2 7 Capacitance, Delay and Sizing Mark Redekopp 2-7.2 Learning Outcomes I understand the sources of capacitance in CMOS circuits I understand how delay scales with resistance, capacitance
More informationDKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction
DKDT: A Performance Aware Dual Dielectric Assignment for Tunneling Current Reduction Saraju P. Mohanty Dept of Computer Science and Engineering University of North Texas smohanty@cs.unt.edu http://www.cs.unt.edu/~smohanty/
More informationLast Lecture. Power Dissipation CMOS Scaling. EECS 141 S02 Lecture 8
EECS 141 S02 Lecture 8 Power Dissipation CMOS Scaling Last Lecture CMOS Inverter loading Switching Performance Evaluation Design optimization Inverter Sizing 1 Today CMOS Inverter power dissipation» Dynamic»
More informationERRATA FOR EDITION 3
ERRATA FOR EDITION 3 PLEASE SEND ANY OTHER ERRATA TO res@ece.ubc.ca. 1. p. 6, in Table 1.1, place the term thin-oxide gate leakage under the term hot-carrier effects in the column marked DSM Devices. 2.
More informationPre and post-silicon techniques to deal with large-scale process variations
Pre and post-silicon techniques to deal with large-scale process variations Jaeyong Chung, Ph.D. Department of Electronic Engineering Incheon National University Outline Introduction to Variability Pre-silicon
More informationECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman Zarkesh-Ha Office: ECE Bldg. 30B Office hours: Tuesday :00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 CMOS
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 11-1:3 Thursday, October 6, 6:3-8:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationVLSI GATE LEVEL DESIGN UNIT - III P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI UNIT - III GATE LEVEL DESIGN P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) contents GATE LEVEL DESIGN : Logic Gates and Other complex gates, Switch logic, Alternate gate circuits, Time Delays, Driving large
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Apr 18, 011 Duration:.5 hrs ECE334 Digital Electronics Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationEEE 421 VLSI Circuits
EEE 421 CMOS Properties Full rail-to-rail swing high noise margins» Logic levels not dependent upon the relative device sizes transistors can be minimum size ratioless Always a path to V dd or GND in steady
More informationCOMP 103. Lecture 16. Dynamic Logic
COMP 03 Lecture 6 Dynamic Logic Reading: 6.3, 6.4 [ll lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] COMP03
More informationHomework Assignment #5 EE 477 Spring 2017 Professor Parker
Homework Assignment #5 EE 477 Spring 2017 Professor Parker Question 1: (15%) Compute the worst-case rising and falling RC time constants at point B of the circuit below using the Elmore delay method. Assume
More informationTiming-Aware Decoupling Capacitance Allocation in Power Distribution Networks
Timing-Aware Decoupling Capacitance Allocation in Power Distribution Networks Sanjay Pant, David Blaauw Electrical Engineering and Computer Science University of Michigan 1/22 Power supply integrity issues
More information2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering
007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits Deog-Kyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we
More informationWhere Does Power Go in CMOS?
Power Dissipation Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit Path between Supply Rails during Switching Leakage Leaking
More information5. CMOS Gate Characteristics CS755
5. CMOS Gate Characteristics Last module: CMOS Transistor theory This module: DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Transistor ehavior 1) If the width of a transistor
More informationTransistor Sizing for Radiation Hardening
Transistor Sizing for Radiation Hardening Qug Zhou and Kartik Mohanram Department of Electrical and Computer Engineering Rice University, Houston, TX 775 E-mail: {qug, kmram}@rice.edu Abstract This paper
More informationTopics to be Covered. capacitance inductance transmission lines
Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationTopic 4. The CMOS Inverter
Topic 4 The CMOS Inverter Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Topic 4-1 Noise in Digital Integrated
More informationTAU 2014 Contest Pessimism Removal of Timing Analysis v1.6 December 11 th,
TU 2014 Contest Pessimism Removal of Timing nalysis v1.6 ecember 11 th, 2013 https://sites.google.com/site/taucontest2014 1 Introduction This document outlines the concepts and implementation details necessary
More informationGrasping The Deep Sub-Micron Challenge in POWERFUL Integrated Circuits
E = B; H = J + D D = ρ ; B = 0 D = ρ ; B = 0 Yehia Massoud ECE Department Rice University Grasping The Deep Sub-Micron Challenge in POWERFUL Integrated Circuits ECE Affiliates 10/8/2003 Background: Integrated
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 24: April 19, 2018 Crosstalk and Wiring, Transmission Lines Lecture Outline! Crosstalk! Repeaters in Wiring! Transmission Lines " Where transmission
More informationDesign for Manufacturability and Power Estimation. Physical issues verification (DSM)
Design for Manufacturability and Power Estimation Lecture 25 Alessandra Nardi Thanks to Prof. Jan Rabaey and Prof. K. Keutzer Physical issues verification (DSM) Interconnects Signal Integrity P/G integrity
More informationErrata of K Introduction to VLSI Systems: A Logic, Circuit, and System Perspective
Errata of K13126 Introduction to VLSI Systems: A Logic, Circuit, and System Perspective Chapter 1. Page 8, Table 1-1) The 0.35-µm process parameters are from MOSIS, both 0.25-µm and 0.18-µm process parameters
More information! Crosstalk. ! Repeaters in Wiring. ! Transmission Lines. " Where transmission lines arise? " Lossless Transmission Line.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 24: April 19, 2018 Crosstalk and Wiring, Transmission Lines Lecture Outline! Crosstalk! Repeaters in Wiring! Transmission Lines " Where transmission
More informationINTERNAL POWER MODELLING AND MINIMIZATION IN CMOS INVERTERS
INTERNAL POWER MODELLING AND MINIMIZATION IN CMOS INVERTERS S.Turgis, J.M. Daga, J.M.Portal, D.Auvergne LIRMM UMR CNRS 55 Un de Montpellier II 11 Rue ADA 339 Montpellier FRANCE Abstract We present in this
More informationDesign for Variability and Signoff Tips
Design for Variability and Signoff Tips Alexander Tetelbaum Abelite Design Automation, Walnut Creek, USA alex@abelite-da.com ABSTRACT The paper provides useful design tips and recommendations on how to
More informationAnalog Simulation. Digital simulation. Analog simulation. discrete values. discrete timing. continuous values. continuous timing
Analog Simulation Digital simulation discrete values bit, boolean, enumerated, integer exception - floating point discrete timing cycle based - uniform time intervals event based - nonuniform time intervals
More informationEE141Microelettronica. CMOS Logic
Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit
More informationEE115C Digital Electronic Circuits Homework #5
EE115C Digital Electronic Circuits Homework #5 Due Thursday, May 13, 6pm @ 56-147E EIV Problem 1 Elmore Delay Analysis Calculate the Elmore delay from node A to node B using the values for the resistors
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)
1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design & Logical Effort Prof. blj@ece.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay
More informationLuis Manuel Santana Gallego 31 Investigation and simulation of the clock skew in modern integrated circuits
Luis Manuel Santana Gallego 31 Investigation and simulation of the clock skew in modern egrated circuits 3. Clock skew 3.1. Definitions For two sequentially adjacent registers, as shown in figure.1, C
More informationLECTURE 380 TWO-STAGE OPEN-LOOP COMPARATORS - II (READING: AH ) Trip Point of an Inverter
Lecture 380 Two-Stage Open-Loop Comparators-II (4/5/02) Page 380-1 LECTURE 380 TWO-STAGE OPEN-LOOP COMPARATORS - II (READING: AH 445-461) Trip Point of an Inverter V DD In order to determine the propagation
More informationTHE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
More informationCMPEN 411. Spring Lecture 18: Static Sequential Circuits
CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 18: Static Sequential Circuits [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Sp11
More informationEE5311- Digital IC Design
EE5311- Digital IC Design Module 3 - The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 3, 2018 Janakiraman, IITM
More informationEfficient Circuit Analysis under Multiple Input Switching (MIS) Anupama R. Subramaniam
Efficient Circuit Analysis under Multiple Input Switching (MIS) by Anupama R. Subramaniam A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time
More informationEE371 - Advanced VLSI Circuit Design
EE371 - Advanced VLSI Circuit Design Midterm Examination May 1999 Name: No. Points Score 1. 20 2. 24 3. 26 4. 20 TOTAL / 90 In recognition of and in the spirit of the Stanford University Honor Code, I
More informationDigital Integrated Circuits A Design Perspective
Digital Integrated Circuits Design Perspective Jan M. Rabaey nantha Chandrakasan orivoje Nikolić Designing Combinational Logic Circuits November 2002. 1 Combinational vs. Sequential Logic In Combinational
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
More informationΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΔΙΑΛΕΞΕΙΣ 12-13: esigning ynamic and Static CMOS Sequential Circuits ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) (ack: Prof. Mary Jane Irwin and
More informationDC and Transient. Courtesy of Dr. Daehyun Dr. Dr. Shmuel and Dr.
DC and Transient Courtesy of Dr. Daehyun Lim@WSU, Dr. Harris@HMC, Dr. Shmuel Wimer@BIU and Dr. Choi@PSU http://csce.uark.edu +1 (479) 575-604 yrpeng@uark.edu Pass Transistors We have assumed source is
More informationLecture 9: Sequential Logic Circuits. Reading: CH 7
Lecture 9: Sequential Logic Circuits Reading: CH 7 Sequential Logic FSM (Finite-state machine) Inputs Current State COMBINATIONAL LOGIC Registers Outputs = f(current, inputs) Next state 2 storage mechanisms
More informationVLSI Design, Fall Logical Effort. Jacob Abraham
6. Logical Effort 6. Logical Effort Jacob Abraham Department of Electrical and Computer Engineering The University of Texas at Austin VLSI Design Fall 207 September 20, 207 ECE Department, University of
More informationEE115C Digital Electronic Circuits Homework #4
EE115 Digital Electronic ircuits Homework #4 Problem 1 Power Dissipation Solution Vdd =1.0V onsider the source follower circuit used to drive a load L =20fF shown above. M1 and M2 are both NMOS transistors
More informationEECS 427 Lecture 11: Power and Energy Reading: EECS 427 F09 Lecture Reminders
EECS 47 Lecture 11: Power and Energy Reading: 5.55 [Adapted from Irwin and Narayanan] 1 Reminders CAD5 is due Wednesday 10/8 You can submit it by Thursday 10/9 at noon Lecture on 11/ will be taught by
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay Estimation 2 Pass Transistors We have assumed source is grounded
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 6: Power Consumption
EE115C Winter 2017 Digital Electronic Circuits Lecture 6: Power Consumption Four Key Design Metrics for Digital ICs Cost of ICs Reliability Speed Power EE115C Winter 2017 2 Power and Energy Challenges
More informationVery Large Scale Integration (VLSI)
Very Large Scale Integration (VLSI) Lecture 4 Dr. Ahmed H. Madian Ah_madian@hotmail.com Dr. Ahmed H. Madian-VLSI Contents Delay estimation Simple RC model Penfield-Rubenstein Model Logical effort Delay
More informationEEC 118 Lecture #16: Manufacturability. Rajeevan Amirtharajah University of California, Davis
EEC 118 Lecture #16: Manufacturability Rajeevan Amirtharajah University of California, Davis Outline Finish interconnect discussion Manufacturability: Rabaey G, H (Kang & Leblebici, 14) Amirtharajah, EEC
More informationDesigning Sequential Logic Circuits
igital Integrated Circuits (83-313) Lecture 5: esigning Sequential Logic Circuits Semester B, 2016-17 Lecturer: r. Adam Teman TAs: Itamar Levi, Robert Giterman 26 April 2017 isclaimer: This course was
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationNTE74HC173 Integrated Circuit TTL High Speed CMOS, 4 Bit D Type Flip Flop with 3 State Outputs
NTE74HC173 Integrated Circuit TTL High Speed CMOS, 4 Bit D Type Flip Flop with 3 State Outputs Description: The NTE74HC173 is an high speed 3 State Quad D Type Flip Flop in a 16 Lead DIP type package that
More informationNAND3_X1. Page 104 of 969
NAND3_X1 Databook Build Date: Thursday Feb 17 15:07 2011 Copyright 2004-2010 Nangate Inc. Conditions for characterization library NangateOpenCellLibrary, corner NangateOpenCellLibrary_typical_typical:
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 18: March 27, 2018 Dynamic Logic, Charge Injection Lecture Outline! Sequential MOS Logic " D-Latch " Timing Constraints! Dynamic Logic " Domino
More informationAn Extended Metastability Simulation Method for Synchronizer Characterization
An Extended Metastability Simulation Method for Synchronizer Characterization Salomon Beer and Ran Ginosar Electrical Engineering Department, Technion Israel Institute of Technology, 382 Haifa, Israel
More informationPARADE: PARAmetric Delay Evaluation Under Process Variation *
PARADE: PARAmetric Delay Evaluation Under Process Variation * Xiang Lu, Zhuo Li, Wangqi Qiu, D. M. H. Walker, Weiping Shi Dept. of Electrical Engineering Dept. of Computer Science Texas A&M University
More informationEE213, Spr 2017 HW#3 Due: May 17 th, in class. Figure 1
RULES: Please try to work on your own. Discussion is permissible, but identical submissions are unacceptable! Please show all intermediate steps: a correct solution without an explanation will get zero
More informationLecture 23. CMOS Logic Gates and Digital VLSI I
ecture 3 CMOS ogic Gates and Digital SI I In this lecture you will learn: Digital ogic The CMOS Inverter Charge and Discharge Dynamics Power Dissipation Digital evels and Noise NFET Inverter Cut-off Saturation
More informationECE 342 Solid State Devices & Circuits 4. CMOS
ECE 34 Solid State Devices & Circuits 4. CMOS Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More informationHigh-to-Low Propagation Delay t PHL
High-to-Low Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (n-channel) immediately switches from cutoff to saturation; the p-channel pull-up switches from triode to
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 14 The CMOS Inverter: dynamic behavior (sizing, inverter
More informationMODULE 5 Chapter 7. Clocked Storage Elements
MODULE 5 Chapter 7 Clocked Storage Elements 3/9/2015 1 Outline Background Clocked Storage Elements Timing, terminology, classification Static CSEs Latches Registers Dynamic CSEs Latches Registers 3/9/2015
More informationCSE493/593. Designing for Low Power
CSE493/593 Designing for Low Power Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.].1 Why Power Matters Packaging costs Power supply rail design Chip and system
More informationCMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance
CMOS INVERTER Last Lecture Metrics for qualifying digital circuits»cost» Reliability» Speed (delay)»performance 1 Today s lecture The CMOS inverter at a glance An MOS transistor model for manual analysis
More informationLecture 23. Dealing with Interconnect. Impact of Interconnect Parasitics
Lecture 23 Dealing with Interconnect Impact of Interconnect Parasitics Reduce Reliability Affect Performance Classes of Parasitics Capacitive Resistive Inductive 1 INTERCONNECT Dealing with Capacitance
More informationEE371 - Advanced VLSI Circuit Design
EE371 - Advanced VLSI Circuit Design Midterm Examination May 7, 2002 Name: No. Points Score 1. 18 2. 22 3. 30 TOTAL / 70 In recognition of and in the spirit of the Stanford University Honor Code, I certify
More informationLecture 6: DC & Transient Response
Lecture 6: DC & Transient Response Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Pass Transistors DC Response Logic Levels and Noise Margins
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: 1st Order RC Delay Models. Review: Two-Input NOR Gate (NOR2)
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 14: March 1, 2016 Combination Logic: Ratioed and Pass Logic Lecture Outline! CMOS Gates Review " CMOS Worst Case Analysis! Ratioed Logic Gates!
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engeerg Department of Electrical Engeerg and Computer Sciences Elad Alon Homework # Solutions EECS141 PROBLEM 1: VTC In this problem we will analyze the noise
More informationΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018
ΗΜΥ 307 ΨΗΦΙΑΚΑ ΟΛΟΚΛΗΡΩΜΕΝΑ ΚΥΚΛΩΜΑΤΑ Εαρινό Εξάμηνο 2018 ΔΙΑΛΕΞΗ 11: Dynamic CMOS Circuits ΧΑΡΗΣ ΘΕΟΧΑΡΙΔΗΣ (ttheocharides@ucy.ac.cy) (ack: Prof. Mary Jane Irwin and Vijay Narayanan) [Προσαρμογή από
More informationECEN 248: INTRODUCTION TO DIGITAL SYSTEMS DESIGN. Week 9 Dr. Srinivas Shakkottai Dept. of Electrical and Computer Engineering
ECEN 248: INTRODUCTION TO DIGITAL SYSTEMS DESIGN Week 9 Dr. Srinivas Shakkottai Dept. of Electrical and Computer Engineering TIMING ANALYSIS Overview Circuits do not respond instantaneously to input changes
More informationEE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors
EE 330 Lecture 16 Devices in Semiconductor Processes MOS Transistors Review from Last Time Model Summary I D I V DS V S I B V BS = 0 0 VS VT W VDS ID = μcox VS VT VDS VS V VDS VS VT L T < W μc ( V V )
More informationDigital Integrated Circuits A Design Perspective
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Designing Sequential Logic Circuits November 2002 Sequential Logic Inputs Current State COMBINATIONAL
More information