High Concentration of Interface Traps in. Zuhui Chen Sah Pen-Tung Center, Xiamen University, China
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1 High Concentration of Interface Tra in MO Traistor Modeling Zuhui Chen ah Pen-Tung Center, Xiamen University, China Bin B. Jie Ititute of Microelectronics, Peking Univeristy, China Chih-Tang ah University of Florida, Gainesville, UA By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.1/21
2 High Concentration of Interface Tra in MO Traistor Modeling Outline Our Motivatio. Theory of Recombination DCIV (R-DCIV and CV Methodologies. Effects of high interface trap concentration at discrete energy levels on R-DCIV and CV line shapes. Effects of the paired-exponential distribution of neutral electron and hole interface tra on R-DCIV and CV line shapes. ummary By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.2/21
3 High Concentration of Interface Tra in MO Traistor Modeling (1 Chih-Tang ah, Origin of Interface tates and Oxide Charges Generated by Ionizing Radiation, Plenary IEEE Nuclear and pace Radiation Conference, an Diego, 1976; Tran. Nuclear ciences N23(6, , December (2 Chih-Tang ah, Interface tra on silicon surfaces, and on oxidized i from electron spin resonance and X-ray photoemission spectroscopy, Properties of ilicon, ection 17.1, 17.2 and 17.3, pp INPEC, The Ititution of Electrical Engineers, UK, (3 Chih-Tang ah, Bin B. Jie and Zuhui Chen, A History of Electronic Tra on ilicon urfaces and Interfaces, Proceedings on CD s of this Conference.. (4 Chih-Tang ah and Bin B. Jie, Generation-Recombination-Trapping at Interface Tra in Compact MO Traistor Modeling, Proc. ICICT-2006, , October 23-26, hanghai, China. IEEE Catalog No. 06EX1294. (5 Bin B. Jie and Chih-Tang ah, Generation-Recombination-Trapping at Interface Tra in hort-channel MO Traistors, ibid (6 Zuhui Chen, Bin B Jie, and Chih-Tang ah, Effects of Energy Distribution of Interface Tra on Recombination DC Current-Voltage Lineshape, J. Appl. Phys. 100, (2006 (7 Chih-Tang ah, Evolution of the MO traistors, from conception to VLI, IEEE Proceedings, 76(10, , October On io2/i interface tra, see sectio III A to H, especially III-D and IV-A, C, D and H. Plus many references cited in these five articles By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.3/21
4 Motivation Reaso for investigating high concentration of interface tra in MO traistors. Concentration and spatial variation of interface tra along the silicon surface greatly affect digital, analog, RF and HF performance of MO traistors and the endurance of the floating gate MO traistors. High concentration of interface tra are generated in MO traistors during radiation exposure and during operation of the floating-gate memory traistors. Theory and potential new applicatio. By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.4/21
5 Theory of recombination DCIV (R-DCIV and CV Methods: the R-DCIV By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.5/21
6 Theory of recombination DCIV (R-DCIV and CV Methods: Baseline of R-DCIV io 2 hallowtrench isolation ource I =I C silicide n++ Oxide pacer n+e * io 2 HALO Gate G n+poly i =3.5nm X =30nm (y HALO Oxide pacer n+de Drain D V B =0mV V GB= 3.5V V DB = 0mV to 700mV to +3.5V to 700mV silicide I D =I E Y silicide n++d Basewell B io 2 hallowtrench isolation I B p+poly i p++b CT CT p+basewell X L G =250nm p+basewell Y E Y J Y BC =180nm Y DJ Y DE p ubstrate I B versus V GB I B = I BaseLine + I InterfaceTrap (V GB I IT (V GB = I E + I J + I BC + I DJ + I DE By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.6/21
7 Theory of recombination DCIV (R-DCIV and CV Methods: R-DCIV Formulas io 2 hallowtrench isolation ource I =I C silicide n++ Oxide pacer n+e * io 2 HALO Gate G n+poly i =3.5nm X =30nm (y HALO Oxide pacer n+de Drain D V B =0mV V GB= 3.5V V DB = 0mV to 700mV to +3.5V to 700mV silicide I D =I E Y silicide n++d Basewell B io 2 hallowtrench isolation I B p+poly i p++b CT CT p+basewell X L G =250nm p+basewell Y E Y J Y BC =180nm Y DJ Y DE p ubstrate I B versus V GB I B = I BaseLine + I InterfaceTrap (V GB I IT (V GB = I E + I J + I BC + I DJ + I DE By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.7/21
8 Theory of recombination DCIV (R-DCIV and CV Methods: R-DCIV Formulas R I B U U (V * * TI = = = GB = c exp(u U = q E s c = TI N (c + c q(c 1 2 / k + e c PN N R c [ln(c B P + c / 2 cosh(u 2 (V 1/ 2 n 1 2 e i n / c T = [(E P [exp(u GB T i N W e (U E + e I * IT PN + cosh(u (y, zdydz [exp(upn 1]N IT(ETI * exp(u / 2 cosh(u + cosh(u P / k N 1]/ 2 B IT + U T + PN N 1 2 ] * TI [ln(c N IT / c s ] * TI de TI dy By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.8/21
9 Theory of recombination DCIV (R-DCIV io 2 hallowtrench isolation CT CT CT and CV Methods: CV Formulas I =I C ource silicide n++ p+basewell * V B =0mV to 700mV Oxide pacer n+e Y E X Gate G p+basewell Y BC V GB= 3.5V to +3.5V silicide n+poly i Oxide pacer Y X J OX io 2 L Y DJ L Y X (y n+de Drain D silicide n++d V DB = 0mV to 700mV I D =I E 0 io 2 Y J HALO L G HALO p ubstrate Y DJ Y DE p+basewell hallowtrench isolation Basewell B I B p+poly i p++b p Body By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.9/21
10 Theory of recombination DCIV (R-DCIV and CV Methods: CV Formulas (1 (2 (3 (4 (5 (6 V Q C C C C GB IT gb hf gb lf it = qn = = = 2 q N kt q E + V = = P + C (C C { N IM IT V IT FB F + C (c (c V /[1 + g Q IT OX it C N N = qn /(C / C + e + e exp( U A IT + C OX exp( U OX IT c /[(C (c + c U F + ε OX V P U E N + C P + U A c + e + e + e F U / C it + C + OX N 2 N ]} + e + c C OX ] P + e exp( U + U C U F + U PN By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.10 10/21
11 Effect of interface trap concentration on R-DCIV and CV lineshapes C gb-hf /C OX (Encluding C it 1x10 13 (c nmot =V =1x10 17 cm -3 3x x10 13 By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. C gb-lf /C OX (Including C it 1x10 13 = V 3x x V GB (V (d MO Traistor Modeling lide No.11 11/21
12 Effect of dopant impurity concentration on R-DCIV and CV lineshapes I B /I Bpk =ev =1E16~1E19 nmot =300mV (a Increasing C gb-lf /C ox (Including C it =ev =1E16~1E19 Increasing nmot =0mV (c 10-7 Increasing (b Increasing (d I B /I Bpk =ev =1E16~1E19 nmot =300mV C gb-lf /C ox (Including C it =ev =1E16~1E19 nmot =0mV - - V GB -V GBpk (V By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA MO Traistor Modeling V GB (V lide No.12 12/21
13 Effect of oxide thickness on R-DCIV and CV lineshapes I B /I Bpk nmot =300mV =1E17cm -3 =ev =12A~200A (a Increasing C gb-lf /C ox (Including C it nmot =0mV =1E17cm -3 Increasing (c =ev =12A~200A I B /I Bpk 10-9 nmot =300mV =1E17cm -3 Increasing (b =ev =12A~200A C gb-lf /C ox (Including C it nmot =0mV =1E17cm -3 Increasing (d =ev =12A~200A V GB -V GBpk (V By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA MO Traistor Modeling V GB (V lide No.13 13/21
14 Effect of temperature on R-DCIV and CV lineshapes I B /I Bpk =ev T=293K~343K nmot =300mV =1E17cm -3 Increasing T (a C gb-lf /C ox (Including C it =ev T=293K~343K (c nmot =0mV =1E17cm -3 I B /I Bpk 10-7 =ev T=293K~343K Increasing T (b nmot =300mV =1E17cm -3 C gb-lf /C ox (Including C it =ev T=293K~343K (d nmot =0mV =1E17cm V GB -V GBpk (V By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA V GB (V MO Traistor Modeling lide No.14 14/21
15 I B /I Bpk I B /I Bpk Effect of discrete trap energy level on R-DCIV and CV line shapes eV - ev - 0.3eV - ev - 0.1eV =1x10 12 cm -2 =-0.5 ~ 0.5 ev nmot =0.3V =1x10 17 cm -3 By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. 0.5eV ev 0.3eV ev 0.1eV (a V GB -V GBpk (V nmot =0.3V (b =1x10 17 cm -3 C gb-hf /C OX (Encluding C it C gb-lf /C OX (Including C it =1x10 12 cm -2 = -0.5 ~ 0.5 ev =1x10 12 cm -2 = -0.5 ~ 0.5 ev -0.5eV -0.5eV -0.3eV MO Traistor Modeling ev ev 0.5eV 0.5eV nmot (c =V =1x10 17 cm V GB (V (d nmot =0,0V =1x10 17 cm -3 lide No.15 15/21
16 I B /I Bpk I B /I Bpk Effect of interface trap concentration on R-DCIV and CV line shapes E13 3E13 =300mV 5E13 1E13 =300mV =1E8~5E13cm -2 1 neutral electron and hole tra 3E13 1E13 By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. (a 1E13 3E13 5E13 (b V GB -V GBpk (V 1E13 3E13 5E13 C gb-hf /C ox (Excluding C it C gb-lf /C ox (Excluding C it nmot =0mV =1E17cm -3 nmot =0mV MO Traistor Modeling (c 5E13 3E13 1E13 1E13 3E13 5E13 1 neutral electron and hole tra 5E13 3E13 1E13 1E13 3E13 5E13 =1E17cm -3 1 neutral electron and hole tra V GB (V (d lide No.16 16/21
17 Effect of paired exponential distribution of interface tra on R-DCIV and CV line shapes By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.17 17/21
18 Effect of paired exponential distribution of interface tra on R-DCIV and CV line shapes By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.18 18/21
19 ummary The line shapes of the CV( =0 and R-DCIV curves are increasingly distorted as increasing concentration of the interface trap concentration, due to the V GB dependence of the trapped-charge Q IT from trapped electro at the neutral electron tra and trapped holes at the neutral hole tra. At high concentratio of interface tra, the low-frequency and high-frequency CV characteristics show extreme distortio, with even two minima, actually one maximum in the Low-Frequency CV valley. Increasing dopant impurity concentratio and broadening energy distribution of interface tra give characteristic recombination DCIV and HF and LF CV due to the presence of midgap-1-pair and distributed-55-pair interface tra. By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.19 19/21
20 High Concentration of Interface Tra in MO Traistor Modeling Zuhui Chen ah Pen-Tung Center, Xiamen University, China Binbin Jie Ititute of Microelectronics, Peking Univeristy, China Chih-Tang ah University of Florida, Gainesville, UA Acknowledgments Joe Xing Zhou (Nanyang Technology University Colin McAndrew (Freescale emiconductor Gennady Gildenblat (Arizona tate University Mitiko Miura-Mattausch (Hiroshima University CTA (Founded by the late Linda u-nan Chang ah By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.20 20/21
21 High Concentration of Interface Tra in MO Traistor Modeling Zuhui Chen ah Pen-Tung Center, Xiamen University, China Binbin Jie Ititute of Microelectronics, Peking Univeristy, China Chih-Tang ah University of Florida, Gainesville, UA Acknowledgments Thank You Very Much for your attention. Please see us at our Late News poster board for further discussio. By Zuhui Chen, Bin B. Jie, ah. May anta Clara, UA. MO Traistor Modeling lide No.21 21/21
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