1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
|
|
- Matilda Hubbard
- 3 years ago
- Views:
Transcription
1 1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall :00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions. The marks for each question are indicated. The total number of marks on the paper is 100. Budget time accordingly. 2. Write answers in the spaces provided. If additional space is needed, use the backs of sheets but indicate clearly where your answer is continued. 3. Where appropriate, units must be included for answers to be considered complete. 4. A list of useful formulae, a table of constants, and tables of semiconductor properties are attached at the end of the paper (last three pages). For your convenience, three particularly useful parameters are listed below. Particularly useful parameters: Relative permittivity (dielectric constant) for silicon: Si 11.7 Relative permittivity (dielectric constant) for silicon dioxide: SiO2 3.9 Permittivity of free space: F/cm Intrinsic carrier concentration for silicon at 300 K:, Si cm Thermal voltage at 300 K: 300 K V Electron charge: C Planck s constant: J s ev s cm/s 2 Quadratic equation: roots of ax bx c 0 are x b b 2 4ac 2a Total
2 2 Name: 1. [11 marks] The diagram to the right shows energy bands for a junction between gold and n-type silicon with a region of highly doped silicon at the interface. Assume that the work function for gold is 5.1V and that the electron affinity for Si is m 4.01V. + Au n + n + (a) (4 marks) Calculate the Schottky barrier energy, e B0, at the gold-si interface and clearly indicate the height and location of the Schottky barrier on the diagram. (b) (4 marks) What is the minimum doping concentration required in the n + region in order for the width of the space charge region to be less than 100 Å (i.e cm)? Assume that N is large enough in the n + region that you can assume B0 n where e n Ec EF. d (c) (3 marks) Briefly explain why a junction like this might be useful for making an ohmic contact between a metal contact and a semiconductor.
3 3 Name: 2. [12 marks] (a) (5 marks) The picture to the right shows a pn junction that is to be operated as a light-emitting-diode (LED). Briefly explain the process by which light is generated in the LED. Be sure to indicate which region(s) are involved and to indicate how majority or minority carriers are involved in the process occurring in those region(s). n - + p t (b) The energy-band diagram to the right represents a forward-biased pn junction. (i) (2 marks) Briefly explain what aspect(s) of this diagram show(s) that the p-type and n-type materials in this device are degenerately doped. E Fp E Fn E C E v (ii) (3 marks) Briefly explain why there is a population inversion (i.e. higher concentration of electrons in the conduction band than in the valence band) in the central region of the junction (labeled as thickness t). (iii) (2 marks) What kind of device depends on the presence of a population inversion for its operation?
4 4 Name: 3. [14 marks] (a) Assume that 1.49 ev photons are incident on the surface of a GaAs slab with an intensity 0.09 W/cm. (i) (3 marks) If the absorption coefficient for 1.49 ev photons in GaAs is cm -1, the GaAs surface? what is the photon intensity at a depth of x cm below (ii) (3 marks) What is the electron-hole pair generation rate at that depth? (Hint: be careful with units.) (b) The dots on this diagram represent minority-carrier concentrations at the space charge edges for a forward-biased pn junction. The horizontal dashed lines represent thermal equilibrium minority-carrier concentrations. (i) (2 marks) Attach the labels,,, and to the appropriate features on the diagram. carrier concentratio p n -x p x = x n (ii) (3 marks) Assume that the semiconductor is Si and that the impurity concentrations on the p-type side and n-type side, respectively, are cm and cm. Calculate the thermal equilibrium minority-carrier concentration on the p-type side assuming complete impurity ionization and 300 K. (iii) (3 marks) Calculate the minority-carrier concentration at the space charge edge on the p-type side,, if a forward-bias of 0.6 V is applied to this junction.
5 5 Name: 4. [15 marks] The drawing to the right represents a PIN junction diode operated as a photodiode. (a) (4 marks) Briefly explain why there is an induced electric field in the intrinsic region of this device and indicate the direction of this electric field on the diagram. p + n + i a b c d (b) (4 marks) For this device to operate as a photodiode, should terminal a be biased positive or negative with respect to terminal b? Briefly justify your answer and indicate, on the diagram, the direction of the current that will flow when the device is illuminated. (c) (4 marks) Briefly explain the difference between prompt photocurrent and delayed photocurrent. In which regions of the device are the carriers contributing to the prompt and delayed photocurrent generated? (d) (3 marks) Briefly comment on how the presence of an intrinsic region affects the properties of a PIN photodiode in comparison to those of a pn junction photodiode.
6 5. [15 marks] M O S 6 Name: M O S E c 0 E Fs E Fi a b Diagram (a) above shows the energy band diagram on the semiconductor side of a metal-oxidesemiconductor (MOS) capacitor at threshold bias. (a) (2 marks) Is the semiconductor p-type or n-type? Briefly justify your answer. E v (b) (2 marks) Is the voltage applied to the metal gate positive or negative? Briefly justify your answer and indicate the Fermi level of the metal gate on diagram (a). (c) (3 marks) On diagram (b), carefully draw the charge distributions on the metal gate and in the semiconductor in this bias state. You should show the charge density on the metal, Q, the space charge density in the semiconductor, and any charge density induced in the semiconductor. m (d) The diagram to the right shows an IV curve, corresponding to I D(sat) 0.4 ma and V DS (sat) 4.35 V, for a n-channel MOSFET with a threshold voltage of 0.65 V. I D 0.4 ma V DS (sat) (i) (2 marks) What is the gate voltage corresponding to this curve? 4.35 V V DS (ii) (3 marks) What is the conduction parameter, K n, for this device? (iii) (3 marks) What is the current I if D V 4.0 V and V 3.0 V? G DS
7 7 Name: 6. [16 marks] An enhancement mode, n-channel MOS transistor is fabricated on a p-type silicon substrate with 10 cm. The gate material is n + polycrystalline silicon. The threshold voltage is V T 1.2 V. Relative permittivities are given on the front page of the exam. Assume 300K. (a) (2 marks) Using the graph to the right, estimate the metalsemiconductor work function potential difference, ms, for this device. (b) (3 marks) What is the potential difference E E Fp 1 F Fi e between the Fermi energy and the intrinsic Fermi level in the substrate? Assume complete ionization? (c) (3 marks) What is the maximum space charge width,, in the semiconductor? (d) (2 marks) What is the magnitude of the maximum space charge density per unit area, max, in the depletion region of the semiconductor? (e) (3 marks) If the equivalent fixed oxide charge is 810 C/cm, what is the oxide capacitance per unit area? (f) (3 marks) What is the oxide thickness?
8 8 Name: 7. [17 marks] The diagram shows a pn junction solar cell connected to a resistive load. When illuminated, the net current in this device is I I L I F where I L is the photocurrent and I F is the forward bias current. p n (a) (3 marks) On the diagram, indicate the directions of I, I L, I F. (b) (3 marks) Briefly explain how the photocurrent is generated and why it flows in the direction you have indicated. R (c) (3 marks) Briefly explain what causes the forward-bias current and why it flows in the direction you have shown. (d) (4 marks) A silicon pn junction solar cell is illuminated such that the photocurrent is I L 0.42 A at T 300 K. Its open circuit voltage is found to be 0.6 V under these conditions. What is its reverse saturation current. (Hint: recall that for a forward-biased pn junction, the current is exp 1.) (e) (4 marks) The bandgap in silicon is 1.12 ev. Would you expect this solar cell to work better when illuminated by electromagnetic radiation with wavelength 0. 8 μm or when illuminated by electromagnetic radiation radiation with wavelength 1. 4 μm? Justify your answer. (Hint: you may find it useful to calculate the wavelength of a 1.12 ev photon.)
9 9 Name: Potentially useful formulae Photons: photon ; / ; ; Bohr Atom: ; Drift curr. density: ; Eff. mass: ext ; Free particle: Densities of states: / ; / F-D prob. function: ; M-B approx.: exp exp Carrier distributions: ; 1 Effective densities of states: 2 / ; 2 / Therm. equil. carrier concentrations.: exp ; exp Intrins. carr. concentration & Fermi level: exp ; midgap ln Extrinsic semiconductor relationships: exp ; exp Fundamental semiconductor equation: Donor electron relationships: Acceptor hole relationships: Compensated semiconductors, complete ionization: ; exp exp ; exp exp Fermi energy level relationships: ln ; ln ; ln ln Conduct. & resist.: Drift curr. dens.: Total current density: Mobility: ; Diffusion curr. dens.: Einstein relation: Graded impurity distribution: Equil. generation & recombination rates: ; ; Excess carrier recombination (p-type): 0 / ; ; Excess carrier recombination (n-type): 0 / ; ; Hall effect: ; ; ; ; Built in potential barrier (pn junction): ln
10 Poisson s equation: 10 Name: Potentially useful formulae (continued) Sp. charge width: / ; ; / Electric field: max Schottky barrier: Junction Capacitance: / pn diode: exp 1 Schottky barrier diode: exp exp 1 exp 1 MOS depletion width (p-type): / ; ln MOS depletion width (n-type): / ; ln Metal-semiconductor work function difference (p-type): Metal-semiconductor work function difference (n-type): Flat-band voltage: ox Maximum space charge density: max Threshold voltage: max ox 2 ox MOSFET (general): 2 ; ox ; ox ox ox MOSFET (saturation): sat ; sat Electron inversion charge density: exp Channel length mod.: sat Δ sat; Mobility variation: eff max ; eff eff / Forward-biased pn junction.: minority carrier conc. at space charge edge: exp ; exp reverse saturation current density: common-base current gain: photon flux intensity: common-emitter current gain: electron-hole pair generation rate: pn junct. solar cell: exp 1; oc ln 1 ; 1 exp 1 photoconductor: pn photodiode prompt photocurrent: photoconductor gain: Γ ph PIN photodiode prompt photocurrent: Φ 1
11 11 Name: Constants and Conversions J/K ev/k C kg F/cm J-s = ev-s cm/s 1 ev= J Silicon, gallium arsenide, and germanium properties at T = 300 K Property Si GaAs Ge Atoms/cm Atomic weight Crystal structure Diamond Zincblende Diamond Density (g/cm 3 ) Lattice constant Melting point ( o C) Dielectric constant Bandgap energy (ev) Electron affinity, (V) Effective density of states in conduction band, cm Effective density of states in valence band, cm Intrinsic carrier concentration cm Electron mobility, (cm 2 /V-s) Hole mobility, (cm 2 /V-s) Electron effective mass (DoS) Hole effective mass (DoS)
Appendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Semiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
Quiz #1 Practice Problem Set
Name: Student Number: ELEC 3908 Physical Electronics Quiz #1 Practice Problem Set? Minutes January 22, 2016 - No aids except a non-programmable calculator - All questions must be answered - All questions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000
Your Name: ECEN 3320 Semiconductor Devices Final exam - Sunday December 17, 2000 1. Review questions a) Illustrate the generation of a photocurrent in a p-n diode by drawing an energy band diagram. Indicate
Spring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
Chapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a P-type substrate such that a layer of semiconductor is converted into N type. Converting
Semiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
Current mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is
CHAPTER 7 The PN Junction Consider a uniformly doped PN junction, in which one region of the semiconductor is uniformly doped with acceptor atoms and the adjacent region is uniformly doped with donor atoms.
6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
For the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor
Triode Working FET Fundamentals of the Metal Oxide Semiconductor Field-Effect Transistor The characteristics of energy bands as a function of applied voltage. Surface inversion. The expression for the
an introduction to Semiconductor Devices
an introduction to Semiconductor Devices Donald A. Neamen Chapter 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor Introduction: Chapter 6 1. MOSFET Structure 2. MOS Capacitor -
Lecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
Classification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
Chapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
MOS CAPACITOR AND MOSFET
EE336 Semiconductor Devices 1 MOS CAPACITOR AND MOSFET Dr. Mohammed M. Farag Ideal MOS Capacitor Semiconductor Devices Physics and Technology Chapter 5 EE336 Semiconductor Devices 2 MOS Capacitor Structure
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
OPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors. Fabrication of semiconductor sensor
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Fabrication of semiconductor sensor
ELECTRONIC DEVICES AND CIRCUITS SUMMARY
ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The Metal-Semiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)
Session 6: Solid State Physics. Diode
Session 6: Solid State Physics Diode 1 Outline A B C D E F G H I J 2 Definitions / Assumptions Homojunction: the junction is between two regions of the same material Heterojunction: the junction is between
n N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped
Schottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
B12: Semiconductor Devices
B12: Semiconductor Devices Example Sheet 2: Solutions Question 1 To get from eq. (5.70) of the notes to the expression given in the examples sheet, we simply invoke the relations n 0 p 0, n 0 n 0. In this
Semiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
Section 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
Semiconductor Devices and Circuits Fall Midterm Exam. Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering. Name: Mat. -Nr.
Semiconductor Devices and Circuits Fall 2003 Midterm Exam Instructor: Dr. Dietmar Knipp, Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Midterm: 1 hour The exam is a closed
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
Sample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013
Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitance-voltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance
6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
ECE-342 Test 2 Solutions, Nov 4, :00-8:00pm, Closed Book (one page of notes allowed)
ECE-342 Test 2 Solutions, Nov 4, 2008 6:00-8:00pm, Closed Book (one page of notes allowed) Please use the following physical constants in your calculations: Boltzmann s Constant: Electron Charge: Free
Semiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
Stanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, Final Exam, June 8, 2010
Stanford University MatSci 152: Principles of Electronic Materials and Devices Spring Quarter, 2009-2010 Final Exam, June 8, 2010 This is a closed book, closed notes exam. You are allowed two double-sided
Lecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
FYS 3028/8028 Solar Energy and Energy Storage. Calculator with empty memory Language dictionaries
Faculty of Science and Technology Exam in: FYS 3028/8028 Solar Energy and Energy Storage Date: 11.05.2016 Time: 9-13 Place: Åsgårdvegen 9 Approved aids: Type of sheets (sqares/lines): Number of pages incl.
LEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
Section 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
Midterm I - Solutions
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
Schottky diodes. JFETs - MESFETs - MODFETs
Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different
Electron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
MOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
Unit IV Semiconductors Engineering Physics
Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical
FIELD-EFFECT TRANSISTORS
FIEL-EFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancement-type N-MOS transistor 3 I-V characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation
Semiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
Solid State Electronics. Final Examination
The University of Toledo EECS:4400/5400/7400 Solid State Electronic Section elssf08fs.fm - 1 Solid State Electronics Final Examination Problems Points 1. 1. 14 3. 14 Total 40 Was the exam fair? yes no
8. Schottky contacts / JFETs
Technische Universität Graz Institute of Solid State Physics 8. Schottky contacts / JFETs Nov. 21, 2018 Technische Universität Graz Institute of Solid State Physics metal - semiconductor contacts Photoelectric
Semiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids
Fundamentals of Semiconductor Physics
Fall 2007 Fundamentals of Semiconductor Physics 万 歆 Zhejiang Institute of Modern Physics xinwan@zimp.zju.edu.cn http://zimp.zju.edu.cn/~xinwan/ Transistor technology evokes new physics The objective of
ECE 305 Exam 5 SOLUTIONS: Spring 2015 April 17, 2015 Mark Lundstrom Purdue University
NAME: PUID: : ECE 305 Exam 5 SOLUTIONS: April 17, 2015 Mark Lundstrom Purdue University This is a closed book exam. You may use a calculator and the formula sheet at the end of this exam. Following the
PN Junction
P Junction 2017-05-04 Definition Power Electronics = semiconductor switches are used Analogue amplifier = high power loss 250 200 u x 150 100 u Udc i 50 0 0 50 100 150 200 250 300 350 400 i,u dc i,u u
Figure 3.1 (p. 141) Figure 3.2 (p. 142)
Figure 3.1 (p. 141) Allowed electronic-energy-state systems for two isolated materials. States marked with an X are filled; those unmarked are empty. System 1 is a qualitative representation of a metal;
Lecture 12. Semiconductor Detectors - Photodetectors
Lecture 12 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
Lecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture
SECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University
NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula
Avalanche breakdown. Impact ionization causes an avalanche of current. Occurs at low doping
Avalanche breakdown Impact ionization causes an avalanche of current Occurs at low doping Zener tunneling Electrons tunnel from valence band to conduction band Occurs at high doping Tunneling wave decays
Lecture 12: MOS Capacitors, transistors. Context
Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those
ECE 305 Exam 3: Spring 2015 March 6, 2015 Mark Lundstrom Purdue University
NAME: PUID: : ECE 305 Exam 3: March 6, 2015 Mark Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula sheet at the end of this exam Following the ECE policy,
Conductivity and Semi-Conductors
Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction
! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects
Electronic Devices & Circuits
Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Monday, November 11, 013 1 Introduction Chapter 4: we considered the semiconductor
Chapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
ESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
Electrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.
Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and
Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure
Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with
MOS Capacitor MOSFET Devices. MOSFET s. INEL Solid State Electronics. Manuel Toledo Quiñones. ECE Dept. UPRM.
INEL 6055 - Solid State Electronics ECE Dept. UPRM 20th March 2006 Definitions MOS Capacitor Isolated Metal, SiO 2, Si Threshold Voltage qφ m metal d vacuum level SiO qχ 2 E g /2 qφ F E C E i E F E v qφ
3.1 Absorption and Transparency
3.1 Absorption and Transparency 3.1.1 Optical Devices (definitions) 3.1.2 Photon and Semiconductor Interactions 3.1.3 Photon Intensity 3.1.4 Absorption 3.1 Absorption and Transparency Objective 1: Recall
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the
EE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University
NAME: PUID: : ECE 305 Exam 2: Spring 2017 March 10, 2017 Muhammad Alam Purdue University This is a closed book exam You may use a calculator and the formula sheet Following the ECE policy, the calculator
Misan University College of Engineering Electrical Engineering Department. Exam: Final semester Date: 17/6/2017
Misan University College of Engineering Electrical Engineering Department Subject: Electronic I Class: 1 st stage Exam: Final semester Date: 17/6/2017 Examiner: Dr. Baqer. O. TH. Time: 3 hr. Note: Answer
EE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
Sheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
Nature of Lesson (Lecture/Tutorial) H3 WK No. Day/ Date. Remarks. Duration. 4.00pm 6.30pm ALL. 2.5 hours. Introduction to Semiconductors Lecture 01
JANUARY 2018 INTAKE Subject : Semiconductor Physics & Devices Venue : HCI Schedule : Mondays for Tutorial (3pm 5pm / 5pm 7pm) or Tuesdays for Tutorial (3pm 5pm / 5pm 7pm) and Thursdays for Lecture (4pm-6.30
ELEC 4700 Assignment #2
ELEC 4700 Assignment #2 Question 1 (Kasop 4.2) Molecular Orbitals and Atomic Orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction
8.1 Drift diffusion model
8.1 Drift diffusion model Advanced theory 1 Basic Semiconductor Equations The fundamentals of semiconductor physic are well described by tools of quantum mechanic. This point of view gives us a model of
ECE-305: Spring 2018 Exam 2 Review
ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,
Chemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Chenming Hu.
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2009 Professor Chenming Hu Midterm I Name: Closed book. One sheet of notes is
3 Minority carrier profiles (the hyperbolic functions) Consider a
Microelectronic Devices and Circuits October 9, 013 - Homework #3 Due Nov 9, 013 1 Te pn junction Consider an abrupt Si pn + junction tat as 10 15 acceptors cm -3 on te p-side and 10 19 donors on te n-side.
Extensive reading materials on reserve, including
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
Lect. 10: Photodetectors
Photodetection: Absorption => Current Generation h Currents Materials for photodetection: E g < h Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:30-4:30
KATIHAL FİZİĞİ MNT-510
KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With
! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 3, 018 MOS Transistor Theory, MOS Model Lecture Outline! CMOS Process Enhancements! Semiconductor Physics " Band gaps " Field Effects!
Department of Electrical and Computer Engineering, Cornell University. ECE 3150: Microelectronics. Spring Exam 1 ` March 22, 2018
Department of Electrical and Computer Engineering, Cornell University ECE 3150: Microelectronics Spring 2018 Exam 1 ` March 22, 2018 INSTRUCTIONS: Every problem must be done in the separate booklet Only