Enhancement and Technical Notes
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1 BSIM4.4.0 Release Enhancement and Technical Notes BSIM group University of California, Berkeley BSIM4.4.0 March 004 1
2 OUTLINE New Features of BSIM4.4.0 release Trap-assisted tunneling and recombination current model Flatband voltage offset parameter for overlap gate overlap tunneling current Length reduction parameter offset for flicker ise Bug Fixes BSIM4.4.0 March 004
3 Source/Body, Drain/Body Junction Diode Model with Trap-Assisted-Tunneling Current in BSIM4 I bs,d = I sbs,d W P A + V effcj s,deff s,deff bs,d qvbs,d exp NJS, D k NF J J J G tssws,d tss,d min tsswgs,d B T 1 f breakdown Vbs,d VTSSWGS, D (T ) exp NJTSSWG(T ) Vtm0 VTSSWGS, D V Vbs,d VTSSWS, D (T ) exp NJTSSW(T ) Vtm0 VTSSWS, D V Vbs,d VTSS, D (T ) exp NJTS(T ) Vtm0 VTSS, D V bs,d 1 bs,d 1 bs,d 1 Vtm0 = k B TNOM q BSIM4.4.0 March 004 3
4 Proposed Temperature Model Eg(TNOM ) T J tsswgs,d (T ) = J tsswgs,d (TNOM ) exp X tsswgs, d 1 k BT TNOM Eg( TNOM ) T J tssws,d ( T ) = J tssws,d ( TNOM ) exp X tssws, d 1 k BT TNOM Eg(TNOM ) T J tss,d (T ) = J tss,d (TNOM ) exp X tss, d 1 k BT TNOM T NJTSSWG(T ) = NJTSSWG( TNOM ) 1 + TNJTSSWG 1 TNOM T NJTSSW( T ) = NJTSSW (TNOM ) 1 + TNJTSSW 1 TNOM T NJTS (T ) = NJTS (TNOM ) 1 + TNTJS 1 TNOM BSIM4.4.0 March 004 4
5 Proposed TAT Model New Parameters Parameter Name Description Default Value Binnable? Note JTSS, JTSD Bottom trap-assisted saturation current density JTSSWS, JTSSWD STI sidewall trap-assisted saturation current density JTSSWGS, JTSSWGD Gate-edge sidewall trap-assisted saturation current density NJTS Non-ideality factor for JTSS, JTSD NJTSSW Non-ideality factor for JTSSWS, JTSSWD NJTSSWG Non-ideality factor for JTSSWGS, JTSSWGD XTSS, XTSD Power dependence of JTSS, JTSD on temperature XTSSWS, XTSSWD Power dependence of JTSSWS, JTSSWD on temperature XTSSWGS, XTSSWGD Power dependence of JTSSWGS, JTSSWGD on temperature VTSS, VTSD Bottom trap-assisted voltage dependent parameter 1 VTSSWS, VTSSWD STI sidewall trap-assisted voltage dependent parameter 1 VTSSWGS, VTSSWGD Gate-edge sidewall trap-assisted voltage dependent parameter 1 TNJTS Temperature coefficient for NJTS TNJTSSW Temperature coefficient for NJTSSW TNJTSSWG Temperature coefficient for NJTSSWG BSIM4.4.0 March 004 5
6 Simulation Results (TI) 1E-5 48X196X1 1E-4 1E-7 1E-6 48X196X1 I DIODE 1E-9 I DIODE 1E-8 1E-11 1E-13 N+/P GEDL with temperature (NMOS) simulation Temp=r.t. Temp=150C Temp=-55C E-10 1E-1 P+/N GEDL with temperature (PMOS) simulation Temp=r.t. Temp=150C Temp=-55C V B V B BSIM4.4.0 March 004 6
7 Simulation Results (TI) 1E-3 1E-4 1E-6 NMOS STI sidewall RT T=150C simulation T=150C 1E-4 1E-5 1E-6 1E-7 PMOS STI sidewall RM 150C simulation I DIODE 1E-8 1E-10 RT I DIODE (A) 1E-8 1E-9 1E-10 1E-11 T=150C RT 1E-1 1E-1 1E-13 1E E V B (V) VB(V) BSIM4.4.0 March 004 7
8 Simulation Results (Renesas) 0.1 1E-3 1E um Sidewall 5C 85C 15C I jsidewall 1E-7 1E-9 1E-11 1E Vj(V) BSIM4.4.0 March 004 8
9 Simulation Results (Renesas) 1E um Sidewall 5C 85C 15C 1E-7 I jsidewall /µm 1E-9 1E-11 1E Vj(V) BSIM4.4.0 March 004 9
10 Simulation Results (Renesas) um Junction Bottom 15C 85C 5C 0.1 /µm 1E-3 jbottom I 1E-5 1E-7 1E Vj(V) BSIM4.4.0 March
11 Simulation Results (Renesas) um Junction Bottom 15C 85C simulation I jbottom /µm 0.1 1E-3 1E Vj(V) BSIM4.4.0 March
12 Flatband Voltage Offset Parameter for Gate Overlap Tunneling Current VFBSDOFF an offset voltage added to the original source/drain flatband voltage which allows independently setting of V fbsd, to model gate overlap tunneling current accurately. V fbsd = k B T /q log(ngate/nsd) + VFBSDOFF Parameter Name Description Default Value Binnable? Note VFBSDOFF Flatband Voltage Offset Parameter yes BSIM4.4.0 March 004 1
13 Length Reduction Parameter Offset for Flicker Noise LINTNOI an offset to length reduction parameter(lint) for flicker ise For fimod = 1 (unified model) In the inversion region, the ise density is expressed as: S id,inv ( f ) = + W C eff oxe ( L ( L eff eff k B k TI B Tq ds m L eff + LINTNOI ) clm + LINTNOI ) I ds A f bulk ef f ef N NOIA log N NOIA + NOIB N 0 * ( N + N ) l l l + N + N * * + NOIC N + NOIB l NOIC ( N N ) + ( N N ) 0 l 0 l Parameter Name Description Default Value Binnable? Note LINTNOI Length Reduction Parameter Offset BSIM4.4.0 March
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