University of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA


 Liliana Hill
 2 years ago
 Views:
Transcription
1 University of Pennsylvania Department of Electrical Engineering ESE 570 Midterm Exam March 4, 03 FORMULAS AND DATA. PHYSICAL CONSTANTS: n i = intrinsic concentration undoped) silicon =.45 x 0 0 cm 300 o K k = Boltzmans constant =.38 x 03 J/ o K q = electronic charge =.60 x 09 C Å = 08 cm ε Si = permittivity of Si =.06 x 0  F/cm ε SiO = ε ox = permittivity of SiO = 0.34 x 0  F/cm. MOS TRANSISTOR IV CHARACTERITICS for nchannel DEVICE: I D = k n V GS! V [ Tn )V DS! V DS ] + "V DS ) for 0 < V DS < V GS  V Tn ) I D = k n V GS  V Tn ) + λ V DS ) for V DS > V GS  V Tn ) k n = µ n! SiO t ox W n L n a. Threshold Voltage: ) ± qn I V T = V T 0 +! " F + V SB " " F φ F psub) = kt q C ox ln n i N A and φ F nsub) = kt q ln N D n i γ = ε Si qn A C ox 3. CMOS RESISTORS: TABLE Sheet Resistance for Materials in an nwell CMOS process with 3 metal Layers Material Min Typical Max Ω/sq Ω/sq Ω/sq Metal,Metal Metal Polysilicon Silicide 3 6 Diffusion n+,p+) Silicide diffusion 4 0 nwell K K 5K
2  4. CMOS CAPACITORS: C ox = ε ox t ox C GS0 = C ox WL D ) C GD0 = C ox WL D ) C BG0 = C ox W ov L M ) a. MOS Gate Capacitance TABLE Gate Capacitance Capacitor OFF Nonsaturated Saturated C gb total) C ox WL eff + C BG0 C BG0 C BG0 C gs total) C GS0 C ox WL eff 3 C oxwl eff + C GS0 + C GS0 C gd total) C GD0 C oxwl eff C GD0 + C GD b. MOS Diffusion Source/Drain) Capacitance Y 5 3 x j n W + Channel n + 4 Source Drain p  Substrate > N A p +  Channelstop > 0N A Junction Area Type W x j Y x j W x j Y x j WY n + /p n + /p + n + /p + n + /p + n + /p
3 3 C db = A D C j 0 + P D C j 0sw sw) C j V ) = A! C j 0 + V & " 0 where φ 0 = kt q m and C jsw V ) = P!C jsw + V " 0sw & msw) ln N AN D n i and φ 0sw = kt q ln N Asw) N D n i =! 0 ) V " V ) " m j sw) = V " V! 0sw ) + * + + V! 0 ) ) " m j sw) " m j & " + V & ) + V & +! 0sw * + where V V V and V 0, V 0! 0 " m j " m j sw),. . " + V &! 0sw " m j sw),. . C load = C dbn W n ) + C dbp W p ) + C int + C gb c. Routing Capacitance TABLE 3 Typical µm CMOS Capacitances Capacitor Capacitance Description af 08 )/µm C p 50 Poly to substrate  over field oxide C m 30 Metal to substrate  over field oxide C mp 60 Metal to poly C md 60 Metal to diffusion C m 0 Metal to substrate  over field oxide C mm 50 Metal to metal C mp 30 Metal to poly C md 30 Metal to diffusion C m3 0 Metal3 to substrate  over field oxide C m3m 30 Metal3 to metal C m3m 5 Metal3 to metal C m3p Metal3 to poly C m3d 0 Metal3 to diffusion
4 45. SCALING: a. CONSTANT FIELD Scaling: a. All dimensions, including those vertical to the surface /α) b. device voltages /α) c. concentration densities α). b. CONSTANT VOLTAGE Scaling: a. All dimensions, including those vertical to the surface /α) b. device voltages ) c. concentration densities α ). c. LATERAL Scaling: a. gate L /α) only. 6. STATIC/DYNAMIC CHARACTERISTICS OF GATES: a. Temporal Performance Definitions: V 50 = V OL + V OH ) τ PHL = time for output voltage to fall from V OH to V 50. τ PHL = time for output voltage to rise from V OL to V 50. τ P = t PHL + t PHL τ PHL = C load ΔV HL I avghl τ PLH = C load ΔV LH I avglh b. Complementary CMOS Inverter step input): C load τ PHL = k n V DD  V Tn ) [ V Tn V DD  V + ln 4V DD  V Tn ) Tn V  )] DD C load τ PLH = k p V DD  V Tp ) [ V Tp V DD  V Tp + ln 4V DD  V Tp ) V  )] DD V " dv out = k n V in! V Tn )V out! V out k n V in! V Tn V [ ] c. Including t r and t f of input: ) ln V out V in! V Tn )! V out & V out = V V out = V τ PHL actual) = τ PLH actual) = τ PHL step input) + t r ) τ PLH step input) + t f ) d. Super Buffer: a N+ = C LOAD Cg t total = N + )! 0 C d + ac g C d + C g
5 5 a opt [ ln a opt )!] = C d C g 7. NOMINAL SPICE PARAMETERS for µm nwell CMOS PROCESS TABLE 4 Parameter nmos pmos Units VT V KP 8.5 E E5 A/V GAMMA V LAMBDA V  CGS0 6.0 E E0 F/m CGD0 6.0 E E0 F/m CGB0.0 E0.0 E0 F/m CJ 3.0 E E4 F/m MJ CJSW 4.0 E E0 F/m MJSW PB V LD 0. E7 0. E7 m TOX E8 E8 m PHI V NSUB E6 4 E6 cm 3 NFS 5E0 9E0 cm  U cm /Vs XJ.0 E7.0 E7 m DL 0 0 m DW .0 E E7 m 8. nwell CMOS DESIGN RULES Layer/Dimension λ RULE A. Nwell Layer A. Minimum size 0 λ A. Minimum spacing wells at same potential) 6 λ A.3 Minimum spacing wels at different potential) 8 λ B. Active Area B. Minimum size 3 λ B. Minimum spacing 3 λ B.3 Nwell overlap of p+ 5 λ B.4 Nwell overlap of n+ 3 λ B.5 Nwell space to n+ 5 λ B.6 Nwell space to p+ 3 λ C. Poly C. Minimum size λ
6 6 C. Minimum spacing λ C.3 Spacing to n+ or p+ λ C.4 Gate extension λ C.5 Minimum n+ or p+ extension 3 λ E. Contact E. Minimum size λ E. Minimum spacing poly) λ E.3 Minimum spacing n+ or p+) λ E.4 Minimum overlap of n+ or p+ λ E.5 Minimum overlap of poly λ E.6 Minimum overlap of metal λ E.7 Minimum spacing to gate λ F. Metal F. Minimum size 3 λ F. Minimum spacing 3 λ Layer/Dimension λ RULE G. Via G. Minimum size λ G. Minimum spacing 3 λ G.3 Minimum metal overlap λ G.4 Minimum metal overlap λ H. Metal H. Minimum size 3 λ H. Minimum spacing 4 λ I. Via I. Minimum size λ I. Minimum spacing 3 λ J. Metal3 J. Minimum size 8 λ J. Minimum spacing 5 λ J.3 Minimum via overlap λ J.4 Minimum via overlap λ
The Devices. Devices
The The MOS Transistor Gate Oxyde Gate Source n+ Polysilicon Drain n+ FieldOxyde (SiO 2 ) psubstrate p+ stopper Bulk Contact CROSSSECTION of NMOS Transistor CrossSection of CMOS Technology MOS transistors
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2016 Final Friday, May 6 5 Problems with point weightings shown.
More informationThe Physical Structure (NMOS)
The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two
More informationEE 560 MOS TRANSISTOR THEORY PART 2. Kenneth R. Laker, University of Pennsylvania
1 EE 560 MOS TRANSISTOR THEORY PART nmos TRANSISTOR IN LINEAR REGION V S = 0 V G > V T0 channel SiO V D = small 4 C GC C BC substrate depletion region or bulk B p nmos TRANSISTOR AT EDGE OF SATURATION
More information! MOS Capacitances. " Extrinsic. " Intrinsic. ! Lumped Capacitance Model. ! First Order Capacitor Summary. ! Capacitance Implications
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 7: February, 07 MOS SPICE Models, MOS Parasitic Details Lecture Outline! MOS Capacitances " Extrinsic " Intrinsic! Lumped Capacitance Model!
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 017 Final Wednesday, May 3 4 Problems with point weightings shown.
More informationP. R. Nelson 1 ECE418  VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418  VLSI Midterm Exam Solutions 1. (8 points) Draw the crosssection view for AA. The crosssection view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104113) S R on D CMOS Manufacturing Process (pp. 3646) S S C GS G G C GD
More informationand V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )
ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 7: February 4, 2016 MOS SPICE Models, MOS Parasitic Details Lecture Outline! MOS Capacitances " Extrinsic " Intrinsic! Lumped Capacitance
More informationLecture 3: CMOS Transistor Theory
Lecture 3: CMOS Transistor Theory Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV Characteristics Gate and Diffusion Capacitance 2 Introduction So far, we have treated transistors
More informationMOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal IV Characteristics 3. Nonideal IV Effects 4. CV Characteristics 5. DC Transfer Characteristics 6. Switchlevel RC Delay Models MOS
More informationEEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 116 Lecture #3: CMOS Inverters MOS Scaling Rajeevan Amirtharajah University of California, Davis Jeff Parhurst Intel Corporation Outline Review: Inverter Transfer Characteristics Lecture 3: Noise Margins,
More informationVLSI Design and Simulation
VLSI Design and Simulation Performance Characterization Topics Performance Characterization Resistance Estimation Capacitance Estimation Inductance Estimation Performance Characterization Inverter Voltage
More informationEE 560 MOS TRANSISTOR THEORY
1 EE 560 MOS TRANSISTOR THEORY PART 1 TWO TERMINAL MOS STRUCTURE V G (GATE VOLTAGE) 2 GATE OXIDE SiO 2 SUBSTRATE ptype doped Si (N A = 10 15 to 10 16 cm 3 ) t ox V B (SUBSTRATE VOLTAGE) EQUILIBRIUM:
More informationEE 560 MOS INVERTERS: DYNAMIC CHARACTERISTICS. Kenneth R. Laker, University of Pennsylvania
1 EE 560 MOS INVERTERS: DYNAMIC CHARACTERISTICS C gsp V DD C sbp C gd, C gs, C gb > Oxide Caps C db, C sb > Juncion Caps 2 S C in > Ineconnec Cap G B D C dbp V in C gdp V ou C gdn D C dbn G B S C in
More informationMOS Transistor IV Characteristics and Parasitics
ECEN454 Digital Integrated Circuit Design MOS Transistor IV Characteristics and Parasitics ECEN 454 Facts about Transistors So far, we have treated transistors as ideal switches An ON transistor passes
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 16, 2016 MOS Inverter: Dynamic Characteristics Lecture Outline! Review: Symmetric CMOS Inverter Design! Inverter Power! Dynamic
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 6: January 30, 2018 MOS Operating Regions, pt. 2 Lecture Outline! Operating Regions (review) " Subthreshold " Resistive " Saturation! Intro.
More informationCheck course home page periodically for announcements. Homework 2 is due TODAY by 5pm In 240 Cory
EE141 Fall 005 Lecture 6 MOS Capacitances, Propagation elay Important! Check course home page periodically for announcements Homework is due TOAY by 5pm In 40 Cory Homework 3 will be posted TOAY ue Thursday
More informationCircuits. L2: MOS Models2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. GNumber
EE610: CMOS Analog Circuits L: MOS Models (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More informationECE 497 JS Lecture  12 Device Technologies
ECE 497 JS Lecture  12 Device Technologies Spring 2004 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jose@emlab.uiuc.edu 1 NMOS Transistor 2 ρ Source channel charge density
More informationMOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors
More informationEEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring
More informationENEE 359a Digital VLSI Design
SLIDE 1 ENEE 359a Digital VLSI Design & Logical Effort Prof. blj@ece.umd.edu Credit where credit is due: Slides contain original artwork ( Jacob 2004) as well as material taken liberally from Irwin & Vijay
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NORgate C = NOT (A or B)
1 Introduction to TransistorLevel Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationESE 570 MOS TRANSISTOR THEORY Part 2
ESE 570 MOS TRANSISTOR THEORY Part 2 GCA (gradual channel approximation) MOS Transistor Model Strong Inversion Operation CMOS = NMOS + PMOS 2 TwoTerminal MOS Capacitor > nmos Transistor VGS
More informationEE5311 Digital IC Design
EE5311 Digital IC Design Module 1  The Transistor Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai October 28, 2017 Janakiraman, IITM
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 15, 2018 MOS Inverter: Dynamic Characteristics Penn ESE 570 Spring 2018 Khanna Lecture Outline! Inverter Power! Dynamic Characteristics
More informationChapter 2 CMOS Transistor Theory. JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 2 CMOS Transistor Theory JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor JinFu Li, EE,
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationECE 342 Electronic Circuits. 3. MOS Transistors
ECE 342 Electronic Circuits 3. MOS Transistors Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2 to
More information2007 Fall: Electronic Circuits 2 CHAPTER 10. DeogKyoon Jeong School of Electrical Engineering
007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits DeogKyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we
More informationEEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced
More informationPractice 7: CMOS Capacitance
Practice 7: CMOS Capacitance Digital Electronic Circuits Semester A 2012 MOSFET Capacitances MOSFET Capacitance Components 3 Gate to Channel Capacitance In general, the gate capacitance is similar to a
More informationChapter 2 MOS Transistor theory
Chapter MOS Transistor theory.1 Introduction An MOS transistor is a majoritycarrier device, which the current a conductg channel between the source and the dra is modulated by a voltage applied to the
More informationIntroduction to CMOS VLSI. Chapter 2: CMOS Transistor Theory. Harris, 2004 Updated by Li Chen, Outline
Introduction to MOS VLSI Design hapter : MOS Transistor Theory copyright@david Harris, 004 Updated by Li hen, 010 Outline Introduction MOS apacitor nmos IV haracteristics pmos IV haracteristics Gate and
More informationECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor NChannel MOSFET Built on ptype
More informationLecture 11: MOS Transistor
Lecture 11: MOS Transistor Prof. Niknejad Lecture Outline Review: MOS Capacitors Regions MOS Capacitors (3.8 3.9) CV Curve Threshold Voltage MOS Transistors (4.1 4.3): Overview Crosssection and layout
More informationFIELDEFFECT TRANSISTORS
FIELEFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancementtype NMOS transistor 3 IV characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation
More informationII III IV V VI B C N. Al Si P S. Zn Ga Ge As Se Cd In Sn Sb Te. Silicon (Si) the dominating material in IC manufacturing
II III IV V VI B N Al Si P S Zn Ga Ge As Se d In Sn Sb Te Silicon (Si) the dominating material in I manufacturing ompound semiconductors III  V group: GaAs GaN GaSb GaP InAs InP InSb... The Energy Band
More informationThe Devices: MOS Transistors
The Devices: MOS Transistors References: Semiconductor Device Fundamentals, R. F. Pierret, AddisonWesley Digital Integrated Circuits: A Design Perspective, J. Rabaey et.al. Prentice Hall NMOS Transistor
More informationThe transistor is not in the cutoff region. the transistor is in the saturation region. To see this, recognize that in a longchannel transistor ifv
ECE 440 Spring 005 Page 1 Homework Assignment No. Solutions P.4 For each transistor, first determine if the transistor is in cutoff by checking to see if GS is less than or greater than. may have to be
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 111:3 Thursday, October 6, 6:38:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationTHE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
More informationChapter 4 FieldEffect Transistors
Chapter 4 FieldEffect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 41 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationMOS Transistor Properties Review
MOS Transistor Properties Review 1 VLSI Chip Manufacturing Process Photolithography: transfer of mask patterns to the chip Diffusion or ion implantation: selective doping of Si substrate Oxidation: SiO
More informationMOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET. MOS Symbols and Characteristics. nmos Enhancement Transistor
MOS Transistor Theory MOSFET Symbols Current Characteristics of MOSFET Calculation of t and Important 2 nd Order Effects SmallSignal Signal MOSFET Model Summary Material from: CMOS LSI Design By Weste
More informationLecture 15: MOS Transistor models: Body effects, SPICE models. Context. In the last lecture, we discussed the modes of operation of a MOS FET:
Lecture 15: MOS Transistor models: Body effects, SPICE models Context In the last lecture, we discussed the modes of operation of a MOS FET: oltage controlled resistor model I curve (SquareLaw Model)
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 15, 2018 Euler Paths, Energy Basics and Optimization Midterm! Midterm " Mean: 89.7 " Standard Dev: 8.12 2 Lecture Outline! Euler
More informationPractice 3: Semiconductors
Practice 3: Semiconductors Digital Electronic Circuits Semester A 2012 VLSI Fabrication Process VLSI Very Large Scale Integration The ability to fabricate many devices on a single substrate within a given
More informationCMOS Inverter (static view)
Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:
More informationEE105  Fall 2005 Microelectronic Devices and Circuits
EE105  Fall 005 Microelectronic Devices and Circuits ecture 7 MOS Transistor Announcements Homework 3, due today Homework 4 due next week ab this week Reading: Chapter 4 1 ecture Material ast lecture
More informationEE105  Fall 2006 Microelectronic Devices and Circuits
EE105  Fall 2006 Microelectronic Devices and Circuits Prof. Jan M. Rabaey (jan@eecs) Lecture 7: MOS Transistor Some Administrative Issues Lab 2 this week Hw 2 due on We Hw 3 will be posted same day MIDTERM
More informationLecture 14  Digital Circuits (III) CMOS. April 1, 2003
6.12  Microelectronic Devices and Circuits  Spring 23 Lecture 141 Lecture 14  Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:
More informationMOS Transistors. Prof. Krishna Saraswat. Department of Electrical Engineering Stanford University Stanford, CA
MOS Transistors Prof. Krishna Saraswat Department of Electrical Engineering S Stanford, CA 94305 saraswat@stanford.edu 1 1930: Patent on the FieldEffect Transistor! Julius Lilienfeld filed a patent describing
More informationCMPEN 411 VLSI Digital Circuits. Lecture 03: MOS Transistor
CMPEN 411 VLSI Digital Circuits Lecture 03: MOS Transistor Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN 411 L03 S.1
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture
More informationMidterm. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. Pass Transistor Logic. Restore Output.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 21, 2017 Transmission Gates, Euler Paths, Energy Basics Review Midterm! Midterm " Mean: 79.5 " Standard Dev: 14.5 2 Lecture Outline!
More informationThe Inverter. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Inverter Revised from Digital Integrated Circuits, Jan M. Rabaey el, 2003 Propagation Delay CMOS
More informationTopics to be Covered. capacitance inductance transmission lines
Topics to be Covered Circuit Elements Switching Characteristics Power Dissipation Conductor Sizes Charge Sharing Design Margins Yield resistance capacitance inductance transmission lines Resistance of
More informationSECTION: Circle one: Alam Lundstrom. ECE 305 Exam 5 SOLUTIONS: Spring 2016 April 18, 2016 M. A. Alam and M.S. Lundstrom Purdue University
NAME: PUID: SECTION: Circle one: Alam Lundstrom ECE 305 Exam 5 SOLUTIONS: April 18, 2016 M A Alam and MS Lundstrom Purdue University This is a closed book exam You may use a calculator and the formula
More informationEE382M14 CMOS Analog Integrated Circuit Design
EE382M14 CMOS Analog Integrated Circuit Design Lecture 3, MOS Capacitances, Passive Components, and Layout of Analog Integrated Circuits MOS Capacitances Type of MOS transistor capacitors Depletion capacitance
More informationLecture 210 Physical Aspects of ICs (12/15/01) Page 2101
Lecture 210 Physical Aspects of ICs (12/15/01) Page 2101 LECTURE 210 PHYSICAL ASPECTS OF ICs (READING: TextSec. 2.5, 2.6, 2.8) INTRODUCTION Objective Illustrate the physical aspects of integrated circuits
More informationLecture 5: CMOS Transistor Theory
Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos IV Characteristics
More informationAnnouncements. EE141 Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
 Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 123pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationVLSI GATE LEVEL DESIGN UNIT  III P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI UNIT  III GATE LEVEL DESIGN P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) contents GATE LEVEL DESIGN : Logic Gates and Other complex gates, Switch logic, Alternate gate circuits, Time Delays, Driving large
More informationThe Devices. Jan M. Rabaey
The Devices Jan M. Rabaey Goal of this chapter Present intuitive understanding of device operation Introduction of basic device equations Introduction of models for manual analysis Introduction of models
More informationCMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)
CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN
More informationDevice Models (PN Diode, MOSFET )
Device Models (PN Diode, MOSFET ) Instructor: Steven P. Levitan steve@ece.pitt.edu TA: Gayatri Mehta, José Martínez Book: Digital Integrated Circuits: A Design Perspective; Jan Rabaey Lab Notes: Handed
More informationECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman ZarkeshHa Office: ECE Bldg. 30B Office hours: Tuesday :003:00PM or by appointment Email: payman@ece.unm.edu Slide: 1 CMOS
More informationDigital Microelectronic Circuits ( )
Digital Microelectronic ircuits (36113021 ) Presented by: Dr. Alex Fish Lecture 5: Parasitic apacitance and Driving a Load 1 Motivation Thus far, we have learned how to model our essential building block,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007
More informationToday s lecture. EE141 Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
 Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
More informationVLSI Design The MOS Transistor
VLSI Design The MOS Transistor Frank Sill Torres Universidade Federal de Minas Gerais (UFMG), Brazil VLSI Design: CMOS Technology 1 Outline Introduction MOS Capacitor nmos IV Characteristics pmos IV
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
igital Integrated Circuits A esign Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The evices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationECEN474/704: (Analog) VLSI Circuit Design Spring 2018
ECEN474/704: (Analog) SI Circuit Design Spring 2018 ecture 2: MOS ransistor Modeling Sam Palermo Analog & MixedSignal Center exas A&M University Announcements If you haven t already, turn in your 0.18um
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: CMOS Inverter: Visual VTC. Review: CMOS Inverter: Visual VTC
ESE 570: Digital Integrated Circuits and LSI Fundamentals Lec 0: February 4, 207 MOS Inverter: Dynamic Characteristics Lecture Outline! Review: Symmetric CMOS Inverter Design! Inverter Power! Dynamic Characteristics
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
More informationLecture 12: MOS Capacitors, transistors. Context
Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD V in V out C L CMOS Properties Full railtorail swing Symmetrical VTC Propagation delay function of load capacitance and resistance of transistors No static power
More informationECE305: Fall 2017 MOS Capacitors and Transistors
ECE305: Fall 2017 MOS Capacitors and Transistors Pierret, Semiconductor Device Fundamentals (SDF) Chapters 15+16 (pp. 525530, 563599) Professor Peter Bermel Electrical and Computer Engineering Purdue
More informationN Channel MOSFET level 3
N Channel MOSFET level 3 mosn3 NSource NBulk NSource NBulk NSource NBulk NSource (a) (b) (c) (d) NBulk Figure 1: MOSFET Types Form: mosn3: instance name n 1 n n 3 n n 1 is the drain node, n is the gate
More informationStep 1. Finding V M. Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since
Step 1. Finding V M Goal: Þnd V M = input voltage for the output = V M both transistors are saturated at V IN = V M since V DSn = V M  0 > V M  V Tn V SDp = V DD  V M = (V DD  V M ) V Tp Equate drain
More informationIntroduction and Background
Analog CMOS Integrated Circuit Design Introduction and Background Dr. Jawdat AbuTaha Department of Electrical and Computer Engineering Islamic University of Gaza jtaha@iugaza.edu.ps 1 Marking Assignments
More informationECE321 Electronics I
EE31 Electronics I Lecture 8: MOSET Threshold Voltage and Parasitic apacitances Payman ZarkeshHa Office: EE Bldg. 3B Office hours: Tuesday :3:PM or by appointment Email: payman@ece.unm.edu Slide: 1
More informationELEC 3908, Physical Electronics, Lecture 26. MOSFET Small Signal Modelling
ELEC 3908, Physical Electronics, Lecture 26 MOSFET Small Signal Modelling Lecture Outline MOSFET small signal behavior will be considered in the same way as for the diode and BJT Capacitances will be considered
More informationCS/EE Ntype Transistor
CS/EE 6710 MOS Transistor Models Electrical Effects Propagation Delay Ntype Transistor D + G Vds i electrons +Vgs S  1 Another Cutaway View Thanks to National Central University for Some images Vgs Forms
More informationECE 342 Electronic Circuits. Lecture 6 MOS Transistors
ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2
More informationConduction in Semiconductors Review
Conduction in Semiconductors Review Intrinsic (undoped) Semiconductors intrinsic carrier concentration n i =.45x0 0 cm 3, at room temp. n = p = n i, in intrinsic (undoped) material n number of electrons,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 5: January 25, 2018 MOS Operating Regions, pt. 1 Lecture Outline! 3 Regions of operation for MOSFET " Subthreshold " Linear " Saturation!
More informationLow Power VLSI Circuits and Systems Prof. Ajit Pal Department of Computer Science and Engineering Indian Institute of Technology, Kharagpur
Low Power VLSI Circuits and Systems Prof. Ajit Pal Department of Computer Science and Engineering Indian Institute of Technology, Kharagpur Lecture No. # 08 MOS Inverters  III Hello, and welcome to today
More informationName: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering CircuitLevel Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Midterm 1 Monday, September 28 5 problems
More information