Operation and Modeling of. The MOS Transistor. Second Edition. Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS
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1 Operation and Modeling of The MOS Transistor Second Edition Yannis Tsividis Columbia University New York Oxford OXFORD UNIVERSITY PRESS
2 CONTENTS Chapter 1 l.l Chapter Semiconductors, Junctions, and MOSFET Overview Semiconductors Conduction Transit Time Drift Diffusion Contact Potentials The pn Junction Overview of the MOS Transistor Basic Structure A Qualitative Description of MOS Transistor Operation A Fluid Dynamical Analog MOS Transistor Characteristics A Brief Overview of This Book The Two-Terminal MOS Structure The Fiat-Band Voltage Potential Balance and Charge Balance Effect of Gate-Substrate Voltage on Surface Condition Fiat-Band Condition Accumulation XV
3 XVI CONTENTS Depletion and Inversion General Analysis Inversion General Relations and Regions of Inversion Strong Inversion Weak Inversion Moderate Inversion Small-Signal Capacitance Summary of Properties of the Regions of Inversion Chapter Chapter The Three-Terminal MOS Structure Contacting the Inversion Layer The Body Effect Regions of Inversion Approximate Limits Strong Inversion Weak Inversion Moderate Inversion A "V CB Control" Point of View Fundamentals "Pinchoff' Voltage Expressions in Terms of the "Pinchoff Voltage The Four-Terminal MOS Transistor Transistor Regions of Operation General Charge Sheet Models Complete Charge Sheet Model Simplified Charge Sheet Models Model Based on Quasi-Fermi Potentials Regions of Inversion in Terms of Terminal Voltages Strong Inversion Complete Symmetrie Strong-Inversion Model Simplified Symmetrie Strong-Inversion Model Simplified, Source-Referenced, Strong-Inversion Model Model Origin Summary Weak Inversion Moderate Inversion
4 CONTENTS XVÜ 4.8 Interpolation Models Source-Referenced vs. Body-Referenced Modeling Effective Mobility Temperature Effects Breakdown The /^-Channel MOS Transistor Enhancement-Mode and Depletion-Mode Transistors Model Parameter Values, Model Accuracy, and Model Comparison Chapter 5 MOS Transistors with lon-implanted Channels Enhancement nmos Transistors Preliminaries Charges and Threshold Voltages Drain-to-Source Current Model for Strong Inversion Simplified Model for Strong Inversion Weak Inversion Depletion nmos Transistors The Need for an «-Type Implant Charges and Threshold Voltage Transistor Operation Enhancement pmos Transistors Surface-Channel Enhancement-Mode pmos Buried-Channel Enhancement-Mode pmos Chapter 6 Small-Dimension Effects 248 by D. Antoniadis, Massachusetts Institute of Technology Channel Length Modulation Barrier Lowering, Two-Dimensional Charge Sharing, and Threshold Voltage Short-Channel Devices Narrow-Channel Devices Summary and Comments Punchthrough Carrier Velocity Saturation Hot Carrier Effects Substrate Current, Gate Current, and Breakdown Scaling 290
5 XV1I1 CONTENTS 6.8 Effect of Surface and Drain Series Resistances Effects due to Thin Oxides and High Doping Chapter 7 The MOS Transistor in Dynamic Operation Large-Signal Modeling Quasi-Static Operation Terminal Currents in Quasi-Static Operation Evaluation of Charges in Quasi-Static Operation Strong Inversion Moderate Inversion Weak Inversion General Charge Sheet Model Depletion Accumulation Plots of Charges versus V GS Use of Charges in Evaluating Terminal Currents Transit Time under DC Conditions Limitations of the Quasi-Static Model Non-Quasi-Static Modeling The Continuity Equation Non-Quasi-Static Analysis Chapter 8 Small-Signal Modeling for Low and Medium Frequencies A Low-Frequency Small-Signal Model for the Intrinsic Part A Two-Path View A Small-Signal Model for the Channel Path A Small-Signal Model for the Drain-to-Substrate Path Strong Inversion Weak Inversion Moderate Inversion General Models A Medium-Frequency Small-Signal Model for the Intrinsic Part Intrinsic Capacitances 385
6 CONTENTS XiX Small-Signal Modeling for the Extrinsic Part Noise White Noise Flicker Noise Small-Dimension Effects Equivalent-Circuit Model General Models Chapter Chapter High-Frequency Small-Signal Models A Complete Quasi-Static Model Complete Description of Capacitance Effects Small-Signal Equivalent Circuit Topologies Evaluation of Capacitances Frequency Region of Validity j-parameter Models Non-Quasi-Static Models A Non-Quasi-Static Strong-Inversion Model Other Approximations and Higher-Order Models Model Comparison High-Frequency Noise Considerations in MOSFET Modeling for RF Applications MOSFET Modeling for Circuit Simulation Types of Models Combining Several Effects into One Physical Model Parameter Extraction Accuracy Properties of Good Models Considerations and Choices General Considerations Considerations Related to Computer Implementation Benchmark Tests Nontechnical Considerations
7 Appendices A Energy Bands and Related Concepts 557 B Basic Laws of Electrostatics in One Dimension 566 C Charge Density, Electric Field, and Potential in the pn Junction 572 D Energy Band Diagrams for the Two-Terminal MOS Structure 574 E Charge Density, Electric Field, and Potential in the Two- Terminal MOS Structure 578 F General Analysis of the Two-Terminal MOS Structure 580 G Careful Definitions for the Limits of Moderate Inversion 584 H Energy Band Diagrams for the Three-Terminal MOS Structure 587 I General Analysis of the Three-Terminal MOS Structure 591 J Drain Current Formulation Using Quasi-Fermi Potentials 594 K Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region 598 L Evaluation of the Intrinsic Transient Source and Drain Currents 600 M Charges for the Accurate Strong-Inversion Model 603 N Quantities Used in the Derivation of the Non-Quasi-Static y-parameter Model 606 Index 609
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