ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)

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1 ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor control Controlled DC power supplies AC controllers Major Ratings and Characteristics case style TO-0AC (B-PUK) Parameters ST0C..L Units I T(AV) 910 T hs 55 C I T(RMS) 1857 T hs 25 C I Hz 150 Hz 160 A I 2 Hz 1232 KA2 Hz 1125 KA 2 s V DRM /V RRM 10 to 00 V t q typical 1 µs - to 125 C 1

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, max. repetitive V RSM, maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak = max V V ma ST0C..L On-state Conduction I T(AV) Max. average on-state current 910 (355) A 1 conduction, half sine Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one-cycle 150 t = 10ms No voltage non-repetitive surge current 160 A t = 8.3ms reapplied t = 10ms % V RRM 130 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 1232 t = 10ms No voltage Initial = max t = 8.3ms reapplied KA 2 s 871 t = 10ms % V RRM 795 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing KA 2 s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold 1.00 voltage V (16.7% x π x I T(AV) < I < π x I T(AV) ), = max. V T(TO)2 High level value of threshold voltage 1.13 (I > π x I T(AV) ), = max. r t1 Low level value of on-state 0. slope resistance mω (16.7% x π x I T(AV) < I < π x I T(AV) ), = max. r t2 High level value of on-state slope resistance 0.35 (I > π x I T(AV) ), = max. V TM Max. on-state voltage 1. V I = 00A, T pk J = max, t = 10ms sine pulse p I H Maximum holding current 0 I L Typical latching current 0 ma = 25 C, anode supply 12V resistive load 2

3 Switching di/dt Max. non-repetitive rate of rise Gate drive V, Ω, t r 1µs 0 A/µs of turned-on current = max, anode voltage % V DRM Gate current 1A, di g /dt = 1A/µs t d Typical delay time 1.0 V d = 0.67% V DRM, µs = 25 C I TM = 7A, = max, di/dt = A/µs, V R = V t Typical turn-off time 1 q dv/dt = V/µs, Gate 0V Ω, t = 0µs p Blocking dv/dt I DRM I RRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 0 V/µs = max. linear to % rated V DRM ma = max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 10.0 = max, t 5ms p P G(AV) Maximum average gate power 2.0 W = max, f = Hz, d% = I GM Max. peak positive gate current 3.0 A = max, t 5ms p +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage 5.0 V = max, t 5ms p TYP. MAX. I GT 0 - = - C DC gate current required 0 ma = 25 C to trigger = 125 C = - C V GT DC gate voltage required to trigger V = 25 C = 125 C I GD DC gate current not to trigger 10 ma V GD DC gate voltage not to trigger 0.25 V = max Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied 3

4 Thermal and Mechanical Specification Max. operating temperature range - to 125 T stg Max. storage temperature range - to 1 C R thj-hs Max. thermal resistance, DC operation single side cooled K/W junction to heatsink DC operation double side cooled R thc-hs Max. thermal resistance, DC operation single side cooled K/W case to heatsink DC operation double side cooled F Mounting force, ± 10% 1 N (10) (Kg) wt Approximate weight 255 g Case style TO - 0AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side K/W = max Ordering Information Table Device Code ST 0 C L Thyristor 2 - Essential part number 3-0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-0AC (B-PUK) 7-0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 0V/µsec (Standard selection) L = 0V/µsec (Special selection) 4

5 Outline Table 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 27 (1.06) M AX. PIN RECEPTACLE AMP (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN (2.3 ) D IA. M AX. 4.7 (0.18) ± 5 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE (1.430) MIN. STRIKE DISTANCE (0.686) MIN (1.44) Case Style TO-0AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) Maximum Allowable Heatsink Temperature ( C) 1 (Sin gle Side C ooled) R th J-hs (D C ) = K/W Conduction Angle Average O n-state C urren t (A) Maxim um Allowable Heatsink Tem perature ( C ) 1 ( S in g le Sid e C o o le d ) R th J-hs(D C ) = K/W Conduction Period DC Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5

6 Maximum Allowable Heatsink Temperature ( C) 1 (Double Side Cooled) R thj-hs(dc) = K/W Conduction Angle Average On-state Current (A) Maximum Allowable Heatsink Temperature ( C) ST 0C..L Series 1 (Double Side Cooled) R thj-hs (DC ) = K/W Conduction Period DC Average On -state C urrent (A) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle T = 125 C J Maximum Average On-state Power Loss (W) DC 1 1 RMS Limit Conduction Period T = 125 C J Average On-state Current (A) Avera ge On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. In it ia l = Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Peak Half Sine Wave On-state Current (A) M axim um N on Re petitiv e Surg e Curre nt Ve rsus Pulse Train D uration. Co ntro l Of C on duction May Not Be M ain tained. In it ia l = C No V oltag e Re applied Rate d V RRM Reapplied ST7 00C..L Se rie s P ulse Tra in D ura tion ( s)

7 00 Instan tan eous O n-state C urrent (A) 0 T = 25 C J T = 125 C J In stan tane ous On-state Vo ltage (V ) Fig. 9 - On-state Voltage Drop Characteristics Transien t Th erm al Im pe dan ce Z thj-hs (K/W) Steady State V alue R thj-hs = K/W (Sin gle Side Cooled) R thj-hs = K/W (Double Side Cooled) (DC Operation) Square W ave Pulse D uratio n (s) Fig Thermal Impedance Z thj-hs Characteristics Instantaneous G ate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt : V, 10ohm s; tr<=1 µs b) Re co m m e nde d load line for <=30% rated di/dt : 10V, 10ohm s tr<=1 µs VG D Tj=125 C Tj=25 C (b) Tj=- C IG D Device: Fre quenc y Lim ite d by PG (AV) (a) Instantane ous Gate Curren t (A) (1) PGM = 10W, tp = 4m s (2) PGM = W, tp = 2m s (3) PGM = W, tp = 1m s (4) PG M = W, tp = 0.66ms (1) (2) (3) (4) Fig Gate Characteristics 7