BTA12, BTB12 and T12 Series
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1 BTA12, BTB12 and T12 Series SNUBBERLESS, LOIC LEVEL & STANDARD 12A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 12 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma A1 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA12, BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 25V RMS ) complying with UL standards (File ref.: E81734). A1 A1 D 2 PAK (T12-) TO-22AB Insulated (BTA12) Table 2: Order Codes Part Number BTA12-xxxxxR BTB12-xxxxxR T12xx-xxx T12xx-xxx-TR T12xx-xxxR A1 A1 I 2 PAK (T12-R) TO-22AB (BTB12) Marking See page table 8 on page 9 July 25 REV. 8 1/
2 Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) I TSM RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, T j initial = 25 C) I 2 PAK/D 2 PAK/ TO-22AB T c = 5 C TO-22AB Ins. T c = 9 C F = 5 Hz t = 2 ms 12 F = 6 Hz t = 16.7 ms A I ² t I ² t Value for fusing t p = ms 78 A ² s di/dt V DSM /V RSM Critical rate of rise of on-state current I = 2 x I T, t r ns Non repetitive surge peak off-state voltage F = 12 Hz T j = 125 C 5 A/µs t p = ms T j = 25 C V DRM /V RRM + I M Peak gate current t p = 2 µs T j = 125 C 4 A P (AV) Average gate power dissipation T j = 125 C 1 W A V T stg T j Storage junction temperature range Operating junction temperature range - 4 to to C Tables 4: Electrical Characteristics (T j = 25 C, unless otherwise specified) SNUBBERLESS and Logic Level (3 quadrants) T12 BTA12 / BTB12 Symbol Test Conditions Quadrant Unit T125 T1235 TW SW CW BW I T (1) V D = 12 V I - II - III MAX ma V R L = 3 Ω T I - II - III MAX. 1.3 V V D V D = V DRM R L = 3.3 kω T j = 125 C I - II - III MIN..2 V I H (2) I T = ma MAX ma I - III I L I = 1.2 I T MAX. ma II dv/dt (2) V D = 67 %V DRM gate open T j = 125 C MIN V/µs (dv/dt)c =.1 V/µs T j = 125 C (di/dt)c (2) (dv/dt)c = V/µs T j = 125 C MIN A/ms Without snubber T j = 125 C /
3 Standard (4 quadrants) Symbol Test Conditions Quadrant I T (1) V D = 12 V R L = 3 Ω I - II - III IV BTA12 / BTB12 C MAX V T ALL MAX. 1.3 V V D V D = V DRM R L = 3.3 kω T j = 125 C ALL MIN..2 V I H (2) I T = 5 ma MAX ma I L I - III - IV MAX. 4 5 ma I = 1.2 I T II 8 dv/dt (2) V D = 67 %V DRM gate open T j = 125 C MIN. 2 4 V/µs (dv/dt)c (2) (di/dt)c = 5.3 A/ms T j = 125 C MIN. 5 V/µs B 5 Unit ma Table 5: Static Characteristics Symbol Test Conditions Value Unit V T (2) I TM = 17 A t p = 38 µs T j = 25 C MAX V V t (2) Threshold voltage T j = 125 C MAX..85 V R d (2) Dynamic resistance T j = 125 C MAX. 35 mω I T DRM j = 25 C 5 µa V I DRM = V RRM MAX. RRM T j = 125 C 1 ma Note 1: minimum I T is guaranted at 5% of I T max. Note 2: for both polarities of referenced to A1. Table 6: Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) I 2 PAK / D 2 PAK / TO-22AB 1.4 TO-22AB Insulated 2.3 R th(j-a) TO-22AB / I 2 PAK TO-22AB Insulated 6 Junction to ambient S = 1 cm ² D 2 PAK 45 S = Copper surface under tab. C/W C/W 3/
4 Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) P(W) I T(RMS) (A) I T(RMS) (A) T ( C) C BTA BTB / T12 Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4: Relative variation of thermal impedance versus pulse duration 3.5 I T(RMS) (A) 1E+ K=[Z th/rth] 3. 2 DPAK 2 (S=1cm ) Zth(j-c) E-1 Zth(j-a).5. T ( C) C t p(s) 1E-2 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 5E+2 Figure 5: On-state characteristics (maximum values) Figure 6: Surge peak on-state current versus number of cycles I TM(A) Tj max. V to =.85V R d = 35 mω T= j Tj max. T j = 25 C. V TM(V) I TSM(A) Repetitive T C=9 C Non repetitive Tj initial=25 C Number of cycles t=2ms One cycle 1 4/
5 Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < ms and corresponding value of I 2 t Figure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 2 2 I TSM(A), I t (A s) 2.5 I T,I H,I L[T] j / I T,I H,I L[T j=25 C] di/dt limitation: 5A/µs Tj initial=25 C 2. ITSM IT 1.5 I 2 t 1. IH & IL t p(ms) T j( C) Figure 9: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) (BW/CW/T1235) Figure : Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) (TW/T125) 2.8 (di/dt)c [(dv/dt)c] / Specified (di/dt)c (di/dt)c [(dv/dt)c] / Specified (di/dt)c C B SW T1235/CW/BW TW (dv/dt)c (V/µs) (dv/dt)c (V/µs) 1... Figure 11: Relative variation of critical rate of decrease of main current versus junction temperature Figure 12: D 2 PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) 6 (di/dt)c [T j ] / (di/dt)c [T j specified] 8 R th(j-a) ( C/W) DPAK 2 1 T j( C) S(cm²) /
6 Figure 13: Ordering Information Scheme (BTA and BTB series) BT A 12-6 BW R Triac series Insulation A = insulated B = non insulated Current 12 = 12A Voltage 6 = 6V 8 = 8V Sensitivity and type B = 5mA Standard C = 25mA Standard SW = ma Logic Level Packing mode R = Tube BW = 5mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Figure 14: Ordering Information Scheme (T12 series) T (-TR) Triac series Current 12 = 12A Sensitivity 35 = 35mA 5 = 5mA Voltage 6 = 6V 8 = 8V Package 2 = D PAK 2 R = I PAK Packing mode Blanck = Tube -TR = Tape & Reel Table 7: Product Selector Part Number Voltage (xxx) Sensitivity Type 6 V 8 V Package BTA/BTB12-xxxBR X X 5 ma Standard TO-22AB BTA/BTB12-xxxBWR X X 5 ma Snubberless TO-22AB BTA/BTB12-xxxCR X X 25 ma Standard TO-22AB BTA/BTB12-xxxCWR X X 35 ma Snubberless TO-22AB BTA/BTB12-xxxSWR X X ma Logic Level TO-22AB BTA/BTB12-xxxTWR X X 5 ma Logic Level TO-22AB T125-xxx X X 5 ma Snubberless D 2 PAK T1235-xxx X X 35 ma Snubberless D 2 PAK T1235-xxxR X X 35 ma Snubberless I 2 PAK BTB: non insulated TO-22AB package 6/
7 Figure 15: D 2 PAK Package Mechanical Data DIMENSIONS REF. Millimeters Inches L2 E C2 A Min. Typ. Max. Min. Typ. Max. A A L D B B L3 B2 B A1 2. MIN. FLAT ZONE C R C C D E L L V2 L R.4.16 V2 8 8 Figure 16: D 2 PAK Foot Print Dimensions (in millimeters) /
8 Figure 17: TO-22AB Insulated and non insulated) Package Mechanical Data l4 b1 e B l3 I l2 L A a1 a2 b2 c2 M C c1 F DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F I I L l l M Figure 18: I 2 PAK Package Mechanical Data DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A B B B C C D e E L L L V 5 5 V /
9 Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB12-xxxyzR BTA/BTB12-xxxyz TO-22AB 2.3 g 5 Tube T125-xxx T125-xxx 5 Tube D 2 PAK 1.5 g T125-xxx-TR T125-xxx Tape and reel T1235-xxx T1235xxx 5 Tube D 2 PAK 1.5 g T1235-xxx-TR T1235xxx Tape & reel T1235-xxxR T1235-xxxR I 2 PAK 1.5 g 5 Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History Date Revision Description of Changes Sep-22 6A Last update. 1-Jun I 2 PAK package added. 2. TO-22AB delivery mode changed from bulk to tube. 28-Jul-25 8 T125 added 9/
10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 25 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - ermany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America /
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