STTH12R06. Turbo 2 ultrafast high voltage rectifier. Features. Description
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1 STTH12R6 Turbo 2 ultrafast high voltage rectifier eatures Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses Package insulation voltage: TO22C ins: 25 V RMS TO-22PC: 2 V DC Description The STTH12R6 uses ST Turbo 2 6V technology and is specially suited as a boost diode in continuous mode power factor corrections and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. K K TO-22C STTH12R6D K NC D 2 PK STTH12R6G K TO-22PC STTH12R6P K TO-22C insulated STTH12R6DIRG Table 1. Symbol Device summary Value I (V) 12 V RRM 6 V I RM (typ) 7 T j 175 C V (typ) 1.4 V t rr (max) 25 ns ebruary 21 Doc ID 7973 Rev 4 1/
2 Characteristics STTH12R6 1 Characteristics Table 2. bsolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I (RMS) orward rms current TO-22C / TO-22PC / D 2 PK 3 TO-22C ins. 24 TO-22C / D 2 PK T c = 125 C I (V) verage forward current δ =.5 TO-22PC T c = 5 C 12 TO-22C ins. T c = 8 C I SM Surge non repetitive forward current t p = 1 ms sinusoidal 1 T stg Storage temperature range -65 to C T j Maximum operating junction temperature 175 C Table 3. Thermal resistance Symbol Parameter Value (max) Unit TO-22C / D 2 PK 1.7 R th(j-c) Junction to case TO-22PC 4.4 C/W TO-22C ins. 3.3 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I R Reverse leakage current T j = 25 C 45 V R = V RRM T j = 125 C 5 6 µ V orward voltage drop T j = 25 C 2.9 I = 12 T j = 125 C V To evaluate the conduction losses use the following equation: P = 1.16 x I (V) +.53 I 2 (RMS) 2/11 Doc ID 7973 Rev 4
3 STTH12R6 Characteristics Table 5. Dynamic Characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time T j = 25 C I =.5, I rr =.25, I R = 1 I = 1, di /dt = -5 /µs, V R = 3 V I RM Reverse recovery current T j = 125 C I = 12, V R = 4 V, S factor Softness factor.2 di /dt = -2 /µs Q rr Reverse recovery charges 18 nc t fr orward recovery time I = 12, di /dt = 96 2 ns V P orward recovery voltage T j = 25 C /µs, V R = 1.1 x V max 5.5 V ns igure P(W) Conduction losses versus average current δ =.5 δ =.1 δ =.2 I (V) () δ =.5 δ=tp/t igure Z th(j-c) /Rth(j-c) TO-22C TO622C Ins D2PK δ = 1 Relative variation of thermal impedance junction to case versus pulse duration T tp igure I M() igure orward voltage drop versus forward current (typical values) (maximum values) V M(V) T j=25 C (maximum values) Z th(j-c) /Rth(j-c) TO-22PC Relative variation of thermal impedance junction to case versus pulse duration.3 Single pulse Single pulse.1. t (s) p 1.E-3 1.E-2 1.E-1 1.E+.1. t (s) p 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Doc ID 7973 Rev 4 3/11
4 Characteristics STTH12R6 igure 5. Peak reverse recovery current versus di /dt (typical values) igure 6. Reverse recovery time versus di /dt (typical values) I RM() V R=4V I =.25 x I(V) I =.5 x I(V) I=I (V) di /dt(/µs) I =2 x I(V) t (ns) rr I =2 x I(V) I=I (V) I =.5 x I(V) di /dt(/µs) V R=4V igure 7. Reverse recovery charges versus di /dt (typical values) igure 8. Softness factor versus di /dt (typical values) Q (nc) rr V R=4V I =2 x I(V) S factor I 2 x I(V) V R=4V 3 I=I (V) I =.5 x I(V) di /dt(/µs) di /dt(/µs) igure 9. Relative variations of dynamic parameters versus junction temperature igure 1. Transient peak forward voltage versus di /dt (typical values) IRM QRR S factor T ( C) j I=I (V) V R=4V Reference: V P(V) I=I (V) di /dt(/µs) /11 Doc ID 7973 Rev 4
5 STTH12R6 Characteristics igure 11. orward recovery time versus di /dt (typical values) igure 12. Junction capacitance versus reverse voltage applied (typical values) 18 t (ns) fr 1 C(p) I=I (V) V R=1.1 x V max. =1MHz V OSC=3mVRMS T j=25 C di /dt(/µs) V (V) R igure 13. Thermal resistance junction to ambient versus copper surface under tab 7 R th(j-a) ( C/W) 6 Epoxy printed circuit board, R4 copper thickness = 35 µm S Cu (cm²) Doc ID 7973 Rev 4 5/11
6 Package information STTH12R6 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.4 to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Table 6. TO-22C dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. H2 Ø I L5 C L C D E L2 L G L9 D H L4 L typ..645 typ. L G M E L L L L M 2.6 typ..12 typ. Dia. I /11 Doc ID 7973 Rev 4
7 STTH12R6 Package information Table 7. TO-22PC dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. H B B D L3 L2 L4 1 L6 L5 Dia D L7 E G G H L2 16 Typ..63 Typ. L G1 G E L L L L Dia Doc ID 7973 Rev 4 7/11
8 Package information STTH12R6 Table 8. TO-22C (nins. and ins. 2-up) dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max B Ø I b2 C a a I4 L B b b C a1 c2 c l2 a2 c e e b1 M c ØI I L l M /11 Doc ID 7973 Rev 4
9 STTH12R6 Package information Table 9. D 2 PK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C B L D B L3 B2 B 1 C R C C D G E G L M * V2 * LT ZONE NO LESS THN 2mm L L M R.4 typ..16 typ. V2 8 8 igure 14. ootprint (dimensions in mm) Doc ID 7973 Rev 4 9/11
10 Ordering information STTH12R6 3 Ordering information Table 1. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH12R6D STTH12R6D TO-22C 1.9 g 5 Tube STTH12R6G STTH12R6G D 2 PK 1.48 g 5 Tube STTH12R6G-TR STTH12R6G D 2 PK 1.48 g 1 Tape and reel STTH12R6P STTH12R6P TO-22PC 1.7 g 5 Tube STTH12R6DIRG STTH12R6DI TO-22C ins g 5 Tube 4 Revision history Table 11. Document revision history Date Revision Changes January-22 1 Initial release. 18-Oct-24 2 D 2 PK and TO-22C insulated packages added 1-ug-26 3 Reformatted to current standards. dded package insulation voltages on page 1 15-eb-21 4 Corrected typographical error in order codes in Table 1. 1/11 Doc ID 7973 Rev 4
11 STTH12R6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET ORTH IN ST S TERMS ND CONDITIONS O SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE O ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES O MERCHNTBILITY, ITNESS OR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS O NY JURISDICTION), OR INRINGEMENT O NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED OR USE IN MILITRY, IR CRT, SPCE, LIE SVING, OR LIE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE ILURE OR MLUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 21 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica Doc ID 7973 Rev 4 11/11
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