STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB

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1 Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching losses High frequency and/or high pulsed current operation High junction temperature Insulated package: TO-22FPAB Electrical insulation = 15 V RMS Capacitance = 12 pf K A2 A1 D 2 PAK G Description The series uses ST's new 4 V planar Pt doping technology. The is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes Part Number T G G-TR FP Marking T G G FP March 27 Rev 1 1/1

2 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(RMS) RMS forward current 3 A I F(AV) Average forward current, δ =.5 TO-22AB / D 2 PAK Per diode T c = 15 C 8 Per device T c = 145 C 16 A Per diode T c = 125 C 8 TO-22FPAB Per device T c = 9 C 16 I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 12 A T stg Storage temperature range -65 to +175 C T j Maximum operating junction temperature range -4 to +175 C Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case TO-22AC / D 2 PAK TO-22FPAB Per diode 2 Per device 1.15 Per diode 4.6 per device 3.8 C/W R th(c) Coupling TO-22AC / D 2 PAK Per device.3 TO-22FPAB per device 3 C/W When the diodes are used simultaneously: ΔT j(diode 1) = P (diode1) x R th(j-c)(per diode) + P (diode 2) x R th(c) 2/1

3 Characteristics Table 3. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 C 1 V R = V RRM T j = 125 C 1 1 µa T j = 25 C 1.5 T j = 1 C I F = 8 A V F (2) Forward voltage drop T j = 15 C T j = 25 C 1.75 V T j = 1 C I F = 16 A T j = 15 C Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.83 x I F(AV) +.34 x I F 2 (RMS) Table 4. Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 C I F = 1 A, di F /dt = -1 A/µs, V R = 3 V, T j = 25 C ns I RM Reverse recovery current I F = 8 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C A S Softness factor I F = 8 A, di F /dt = -2 A/µs, V R = 32 V, T j = 125 C.4 t fr Forward recovery time I F = 8 A, di F /dt = 1 A/µs V FR = 1.1 x V Fmax, T j = 25 C 15 ns V FP Forward recovery voltage I F = 8 A, di F /dt = 1 A/µs T j = 25 C 2.9 V 3/1

4 Characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current P(W) δ=.5 δ=.1 δ=.2 δ=.5 δ=1 T I F(AV) (A) δ=tp/t tp I FM (A) T J =15 C (Maximum values) T J =15 C (Typical values) T J =25 C (Maximum values) V FM (V) Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Relative variation of thermal impedance junction to case versus pulse duration TO-22FPAB 1. Zth (j-c) /Rth (j-c) Single pulse TO-22AB/D²PAK 1. Zth (j-c) /Rth (j-c) Single pulse TO-22FPAB.1.1 tp(s) 1.E-3 1.E-2 1.E-1 1.E+. tp(s) 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Figure 5. Peak reverse recovery current versus di F /dt (typical values) Figure 6. Reverse recovery time versus di F /dt (typical values) I RM (A) I F = 8 A V R =32 V T j =125 C T j =25 C di F /dt(a/µs) t RR (ns) T j =125 C T j =25 C di F /dt(a/µs) I F = 8 A V R =32 V /1

5 Characteristics Figure 7. Reverse recovery charges versus di F /dt (typical values) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, e CU = 35 µm) Q RR (nc) I F = 8 A V R =32 V T j =125 C Rth (j-a) ( C/W) D²PAK T 4 j =25 C 2 di F /dt(a/µs) S CU (cm²) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 1. Transient peak forward voltage versus di F /dt (typical values) Q RR [T j]/q RR [T j = 125 C] and IRM [T j]/i RM [T j = 125 C] I F = 8 A V R =32 V V Fp (V) I F =8 A T j =125 C.8.6 I RM Q RR T j ( C) di F /dt(a/µs) Figure 11. Forward recovery time versus di F /dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) 7 6 t FR (ns) I F =8 A V FR =1.1 x V F max. T j =125 C 1 C(pF) F=1MHz V OSC =3mV RMS T j =25 C di F /dt(a/µs) V R (V) /1

6 Package information 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.8 Nm (TO-22FPAB) /.55 Nm (TO-22AB) Maximum torque value: 1. Nm (TO-22FPAB) /.7 Nm (TO-22AB) Table 5. D 2 PAK dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A L2 E C2 A A A B L L3 B2 B A1 C R D B C C D G E M A2 * V2 * FLAT ZONE NO LESS THAN 2mm G L L L M R.4 typ..16 typ. V2 8 8 Figure 13. D 2 PAK footprint (dimensions in mm) /1

7 Package information Table 6. TO-22AB dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a B Ø I L b2 C F a B b A b I4 l3 l2 a1 a2 c2 C c c e e b1 M c1 F ØI I L l l M /1

8 Package information Table 7. TO-22FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A H A B B D E Dia F L6 F L2 L7 F L3 G L4 F1 F2 L5 D G H L2 16 Typ..63 Typ. G1 F E L L G L L L Dia In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 8/1

9 Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode T T TO-22AB 1.92 g 5 Tube G G D 2 PAK 1.48 g 5 Tube G-TR G D 2 PAK 1.48 g 1 Tape and reel FP FP TO-22FPAB 1.69 g 5 Tube 4 Revision history Date Revision Description of Changes 31-Mar-27 1 First issue 9/1

10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 27 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 1/1

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high