Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant
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1 Datasheet 60 V - 1 power Schottky rectifier K Features Negligible switching losses K SM K DO-41 Low forward voltage drop Surface mount miniature packages valanche rated ECOPCK 2 compliant K STmite flat K SOD123 Flat pplications Lighting Desktop power supply Battery charger Set top box uxiliary power Description xial and surface mount power Schottky rectifiers suited to switched mode power supplies and high frequency DC to DC converters. Packaged in SM, STmite flat, DO-41 and SOD123Flat, the STPS1L60 is ideal for use in low voltage, high frequency inverters and small battery chargers. Product status STPS1L60 Product summary Symbol I F(V) V RRM Value 1 60 V T j(max.) 175 C V F(typ.) 0.50 V DS Rev 11 - December 2018 For further information contact your local STMicroelectronics sales office.
2 Characteristics 1 Characteristics Table 1. bsolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 60 V I F(RMS) Forward rms current SM/DO STmite flat 2 SM T L = 155 C I F(V) verage forward current δ = 0.5, square wave DO-41 T L = 145 C SOD123 Flat T L = 160 C 1 STmite flat T C = 160 C I FSM Surge non repetitive forward current SM, DO-41, STmite flat t p = 10 ms sinusoidal 40 SOD123 Flat 50 P RM Repetitive peak avalanche power t p = 10 µs, T j = 125 C 85 W T stg Storage temperature range -65 to +175 C T j Operating junction temperature (1) +175 C 1. (dp tot /dt j ) < (1/R th(j-a) ) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit SM 30 R th(j-l) Junction to lead DO-41/lead length = 10 mm 45 SOD123 Flat 20 C/W R th(j-c) Junction to case STmite flat 20 For more information, please refer to the following application note : N5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T j = 25 C - 50 µ I R (1) Reverse leakage current T j = 100 C V R = V RRM T j = 125 C m V F (1) Forward voltage drop T j = 25 C I F = 1 T j = 125 C T j = 25 C I F = 2 T j = 125 C V 1. Pulse test: t p = 380 µs, δ < 2% DS Rev 11 page 2/17
3 Characteristics To evaluate the conduction losses, use the following equation: P = 0.42 x I F(V) x I 2 F (RMS) For more information, please refer to the following application notes related to the power losses : N604: Calculation of conduction losses in a power rectifier N4021: Calculation of reverse losses on a power diode DS Rev 11 page 3/17
4 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. verage forward power dissipation versus average forward current Figure 2. verage forward current versus ambient temperature (δ = 0.5) P F(V) (W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 5 I F(V) () SM R th(j-a) = R th(j-l) T 1 T 0.1 I F(V) () δ= tp/t tp δ= tp/t tp T amb ( C) Figure 3. verage forward current versus ambient temperature (δ = 0.5) Figure 4. verage forward current versus ambient temperature (δ = 0.5) I F(V) () R th(j-a) = R th(j-l) DO I F(V) () R th(j-a) = R th(j-c) STmite flat T 0.4 T 0.5 δ= tp/t tp T amb ( C) δ= tp/t tp T amb ( C) DS Rev 11 page 4/17
5 Characteristics (curves) Figure 5. verage forward current versus ambient temperature (δ = 0.5) 6 5 I F(V) () R th(j-a) = R th(j-l) SOD123Flat Figure 6. Normalized avalanche power derating versus pulse duration (T j = 125 C) P RM(tp) P RM(10 µs) T 1 T amb ( C) δ= tp/t tp t p(µs) Figure 7. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 8. Relative variation of thermal impedance junction to ambient versus pulse duration Z th(j-a) /R th(j-a) 1.0 SM Single pulse 0.1 tp(s) E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a) /R th(j-a) 1.0 DO Single pulse 0.1 tp(s) E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 10. Relative variation of thermal impedance junction to lead versus pulse duration Z th(j-a) /R th(j-a) 1.0 STmite flat Single pulse 0.1 tp(s) E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-l) /R th(j-l) 1.0 SOD123Flat Single pulse 0.1 tp(s) E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 DS Rev 11 page 5/17
6 Characteristics (curves) Figure 11. Reverse leakage current versus reverse voltage applied (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) 1.E+02 I R (m) 1000 C(pF) 1.E+01 T j = 150 C F = 1 MHz V OSC = 30 mv RMS T j = 25 C T j = 125 C 1.E+00 T j = 100 C T j = 75 C E-01 T j = 50 C 1.E-02 T j = 25 C V R (V) 1.E V R (V) Figure 13. Forward voltage drop versus forward current (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead (typical values) I F () 200 R th(j-a) ( C/W) SM T j = 125 C T j = 25 C T j = 75 C Epoxy printed board FR4, e Cu = 35 µm 50 V F (V) S Cu (cm²) Figure 15. Thermal resistance junction to ambient versus copper surface under tab (typical values) Figure 16. Thermal resistance junction to ambient versus copper surface under each lead (typical values) R th(j-a) ( C/W) R th(j-a) ( C/W) STmite flat SOD123Flat Epoxy printed board FR4, e Cu = 35 µm Epoxy printed board FR4, e Cu = 35 µm S Cu (cm²) SCu(cm²) DS Rev 11 page 6/17
7 Characteristics (curves) Figure 17. Thermal resistance versus lead length R th ( C/W) R th(j-a) DO R th(j-l) L leads (mm) DS Rev 11 page 7/17
8 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. 2.1 SM package information Epoxy meets UL94, V0 Cooling method : by conduction (C) Figure 18. SM package outline E1 D E 1 C 2 L b Ref. Table 4. SM package mechanical data Millimeters Dimensions Inches (for reference only) Min. Max. Min. Max b c D E E L DS Rev 11 page 8/17
9 SM package information Figure 19. SM recommended footprint in mm (inches) 1.4 (0.055) 2.63 (0.104) 1.4 (0.055) 1.64 (0.065) 5.43 (0.214) DS Rev 11 page 9/17
10 DO-41 package information 2.2 DO-41 package information Epoxy meets UL 94, V0 Figure 20. DO-41 package outline C C ØD ØB Table 5. DO-41 package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Typ. Max. Min. Typ. Max B C D DS Rev 11 page 10/17
11 SOD123Flat package information 2.3 SOD123 Flat package information Figure 21. SOD123Flat package outline C1 L HD D L b C E Table 6. SOD123Flat package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Typ. Max. Min. Typ. Max b c c D E HD L DS Rev 11 page 11/17
12 SOD123Flat package information Figure 22. SOD123Flat footprint dimensions (mm) DS Rev 11 page 12/17
13 STmite Flat package information 2.4 STmiteFlat package information Epoxy meets UL 94,V0 Figure 23. STmite Flat package outline 1 E1 L L1 L2 1 D b b2 E TOP VIEW L3 BOTTOM VIEW C FRONT VIEW RIGHT VIEW Table 7. STmite Flat package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Typ. Max. Min. Typ. Max b b c D E E L L L L DS Rev 11 page 13/17
14 STmite Flat package information Figure 24. STmite Flat Recommended footprint (0.033) (0.025) (0.079) (0.026) (0.026) (0.037) 1.95 (0.077) 4.13 (0.163) millimeters (inches) DS Rev 11 page 14/17
15 Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS1L60 GB6 SM 68 mg 5000 Tape and reel STPS1L60RL STPS1L60 DO mg 5000 Tape and reel STPS1L60MF F1L6 STmite flat 16 mg Tape and reel STPS1L60ZF 1L6 SOD123 Flat 12.5 mg 3000 Tape and reel DS Rev 11 page 15/17
16 Revision history Table 9. Document revision history Date Revision Changes Jul Last update. ug SM package dimensions update. Reference 1 max. changed from 2.70 mm (0.106 inch.) to 2.03 mm (0.080 inc.). 25-Jun dded STmite flat package. Updated ECOPCK statement. 30-Sep Updated table 7 ref. "C" 9-ug dded SOD123Flat package. 26-ug Updated table Dec Updated Section Features and Table 1. bsolute ratings (limiting values at 25 C, unless otherwise specified). DS Rev 11 page 16/17
17 IMPORTNT NOTICE PLESE RED CREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. ll other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics ll rights reserved DS Rev 11 page 17/17
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ULTRST RECTIIER PP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) V RRM V P (typ) I RM (typ) 6 3 V 2.5 V 6 T j 175 C V (typ).9 V K ETURES N BENEITS Ultrafast recovery allowing High Sustain
ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications
Very low quiescent current dual voltage regulator Description Datasheet - production data Features DFN8 (5x6 mm) V O1 : fixed V O2 : adjustable from 1.25 to V I - V DROP Guaranteed current of output 1:
Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5.
Features SOT23-5L Stable with low ESR ceramic capacitors Ultra low dropout voltage (0.12 V typ. at 50 ma load, 7 mv typ. at 1 ma load) Very low quiescent current (80 µa typ. at no load in on mode; max
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
STTH40P03S ULTRST RECTIIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) 40 V RRM 300 V V P (typ) 2.5 V I RM (typ) 5 T j 175 C V (typ) 0.9 V ETURES ND BENEITS Ultrafast recovery allowing
LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications.
Datasheet 2 A high PSRR ultra low drop linear regulator with reverse current protection Features Input voltage from 1.25 V to 6. V Ultra low drop: 13 mv (typ.) at 2 A load 1 % output accuracy at 25 C,
STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D
STTH8R3G/D 3V HYPERFST RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 8 3 V I RM (typ.) 4 Tj (max) 175 C V F (max) 1.3 V trr (max) 3 ns FETURES ND BENEFITS Designed for high frequency applications.
STPS10L60D/FP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 10 A 60 V Tj (max) 150 C TO-220FPAC STPS10L60FP
SPSL6D/FP POWER SCHOKY RECIFIER MIN PRODUC CHRCERISICS I F(V) V RRM 6 V j (max) 5 C V F (max).56 V FEURES ND BENEFIS LOW FORWRD VOLGE DROP NEGLIGIBLE SWICHING LOSSES LOW HERML RESISNCE VLNCHE CPBILIY SPECIFIED
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH TURBO ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM FEATURES AND BENEFITS Ultrafast switching Low reverse recovery current A V Tj (max) 7 C V F (max) trr (max). V ns
High Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00
Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
VNL5090N3-E, VNL5090S5-E
OMNIFET III fully protected low-side driver Datasheet - production data 2 Features Type V clamp R DS(on) I D VNL5090N3-E VNL5090S5-E 1 2 SOT-223 3 SO-8 41 V 90 mω 13 A Automotive qualified Drain current:
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height
BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP
BA60J SMALL SIGNAL SCHOKY DIODE FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD VOLAGE DROP A 60 K EXREMELY FAS SWICHING SURFACE MOUNED DEVICE DESCRIPION Schottky
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH8L6D/FP TURBO 2 ULTRFST HIGH VOLTGE RECTIFIER MIN PRODUCT CHRCTERISTICS I F(V) V RRM 8 6 V I R (max) 2 µ Tj (max) 75 C V F (max).5 V trr (max) 5 ns FETURES ND BENEFITS Ultrafast switching Low reverse
GC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
Description. Symbol Value Unit SOT23-3L (P010xxL) I T(RMS) up to 0.8 A V DRM /V RRM up to 600 V. I GT From 5 to 200 µa
P010XX Sensitive standard SCRs up to 0.8 Datasheet production data Description K G TO-92 (P010xx) G K K G SOT-223 (P0102xN) Thanks to highly sensitive triggering levels, the P010XX SCR series is suitable
LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description
Datasheet High PSRR, low drop linear regulator IC Features Input voltage from 2.5 V to 18 V 2 V AMR Any fixed output voltages, from 1.2 V to 12 V in 1 mv steps (from 1.2 V to 6.6 V in 5 mv steps) available
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A
HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 TO0B TMBS ITO0B FETURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
Small Signal Schottky Diode FlipKY Gen 2
Small Signal Schottky Diode FlipKY Gen 2 MECHNICL DT Case: CLP0603-2M X FETURES Schottky diode for high-speed switching Very low dimensions: 0.6 mm x 0.3 mm x 0.29 mm 0.2 forward current Low forward voltage
FEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A
New Product V3000C, VF3000C, VB3000C & VI3000C Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.56 V at I F = 5 A TMBS TO0AB ITO0AB 3 3 V3000C VF3000C CASE TO63AB TO6AA 3 VB3000C
IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
I F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs
High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge
Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
case T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
Ultrafast Rectifier, 8 A FRED Pt
Ultrafast Rectifier, 8 FRED Pt 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature Low leakage current
T C = 25 C, t P = 10 ms 2
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of V F Fast switching
VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I
ELECTROSÓN BTA24, BTB24, BTA25 BTA26, BTB26, T A standard and Snubberless triacs. Features. Applications. Description
BT4, BTB24, BT5 BT6, BTB26, T25 25 A standard and Snubberless triacs Features High current triac Low thermal resistance with clip bonding High commutation (4 quadrant) or very high commutation (3 quadrant)
Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
N8W-V Small Signal Fast Switching Diode Features These diodes are also available in other case styles including the DO case with the type designation N8, the e MiniMELF case with the type designation LL8,
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD
1N582x LOW DROP POWER SCHOKY RECIFIER MAJOR PRODUCS CHARACERISICS IF(AV) VRRM 3 A 4 V j 15 C VF (max).475 V FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES EXREMELY FAS SWICHING
IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM