ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

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1 Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology 16 V, very low drop rectifiers for converter 12 V, 25 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 2 khz. Product status A2C25S12M3 Product summary Order code Marking A2C25S12M3 A2C25S12M3 Package ACPACK 2 Leads type Solder contact pins DS Rev 3 - November 218 For further information contact your local STMicroelectronics sales office.

2 lectrical ratings 1 lectrical ratings 1.1 Inverter stage Limiting values at T J = 25 C, unless otherwise specified IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V CS Collector-emitter voltage (V G = V) 12 V I C Continuous collector current (T C = 1 C) 25 A I (1) CP Pulsed collector current (t p = 1 ms) 5 A V G Gate-emitter voltage ±2 V P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) 197 W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 2. lectrical characteristics of the IGBTs, inverter stage V (BR)CS V C(sat) (terminal) Collector-emitter breakdown voltage Collector-emitter saturation voltage I C = 1 ma, V G = V 12 V V G = 15 V, I C = 25 A V V G = 15 V, I C = 25 A, T J = 15 C 2.3 V V G(th) Gate threshold voltage V C = V G, I C = 1 ma V I CS Collector cut-off current V G = V, V C = 12 V 1 μa I GS Gate-emitter leakage current V C = V, V G = ±2 V ±5 na C ies Input capacitance 155 pf C oes Output capacitance V C = 25 V, f = 1 MHz, V G = V 13 pf C res Reverse transfer capacitance 65 pf Q g Total gate charge V CC = 96 V, I C = 25 A, V G = ±15 V 8 nc t d(on) Turn-on delay time V CC = 6 V, I C = 25 A, 19 ns t r Current rise time R G = 15 Ω, V G = ±15 V, 15.3 ns (1) on Turn-on switching energy di/dt = 129 A/µs.97 mj DS Rev 3 page 2/17

3 Inverter stage t d(off) Turn-off delay time V CC = 6 V, I C = 25 A, 19 ns t f Current fall time R G = 15 Ω, V G = ±15 V, 132 ns (2) off Turn-off switching energy dv/dt = 96 V/µs 1.36 mj t d(on) Turn-on delay time V CC = 6 V, I C = 25 A, 19 ns t r Current rise time R G = 15 Ω, V G = ±15 V, 16.2 ns (1) on Turn-on switching energy di/dt = 1274 A/µs, T J = 15 C 1.49 mj t d(off) Turn-off delay time V CC = 6 V, I C = 25 A, 122 ns t f Current fall time R G = 15 Ω, V G = ±15 V, 216 ns (2) off Turn-off switching energy dv/dt = 82 V/µs, T J = 15 C 1.85 mj t SC Short-circuit withstand time V CC 6 V, V G 15 V, T Jstart 15 C 1 µs R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink ach IGBT C/W ach IGBT, λ grease = 1 W/(m C).79 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current Diode Limiting values at T J = 25 C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current (T C = 1 C) 25 A I (1) FP Pulsed forward current (t p = 1 ms) 5 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 4. lectrical characteristics of the diode, inverter stage V F (terminal) Forward voltage I F = 25 A I F = 25 A, T J = 15 C V t rr Reverse recovery time - 19 ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, µc I rrm Reverse recovery current V G = ±15 V, di F /dt = 129 A/μs - 29 A rec Reverse recovery energy -.74 mj DS Rev 3 page 3/17

4 Brake stage t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, µc I rrm Reverse recovery current V G = ±15 V, di F /dt = 1274 A/μs, T J = 15 C - 41 A rec Reverse recovery energy mj R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink ach diode C/W ach diode, λ grease = 1 W/(m C) -.85 C/W 1.2 Brake stage Limiting values at T J = 25 C, unless otherwise specified IGBT Table 5. Absolute maximum ratings of the IGBT, brake stage Symbol Parameter Value Unit V CS Collector-emitter voltage (V G = V) 12 V I C Continuous collector current (T C = 1 C) 25 A I (1) CP Pulsed collector current (t p = 1 ms) 5 A V G Gate-emitter voltage ±2 V P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) 197 W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 6. lectrical characteristics of the IGBT, brake stage V (BR)CS Collector-emitter breakdown voltage I C = 1 ma, V G = V 12 V V C(sat) (terminal) Collector-emitter saturation voltage V G = 15 V, I C = 25 A 1.95 V G = 15 V, I C = 25 A, T J = 15 C 2.3 V V G(th) Gate threshold voltage V C = V G, I C = 1mA V I CS Collector cut-off current V G = V, V C = 12 V 1 µa I GS Gate-emitter leakage current V C = V, V G = ±2 V ± 5 na C ies Input capacitance 155 pf C oes Output capacitance V C = 25 V, f = 1 MHz, V G = V 13 pf C res Reverse transfer capacitance 65 pf Q g Total gate charge V CC = 96 V, I C = 25 A, V G = ±15 V 8 nc DS Rev 3 page 4/17

5 Brake stage t d(on) Turn-on delay time V CC = 6 V, I C = 25 A, 19 ns t r Current rise time R G = 15 Ω, V G = ±15 V, 15.3 ns (1) on Turn-on switching energy di/dt = 129 A/µs.97 mj t d(off) Turn-off delay time V CC = 6 V, I C = 25 A, 19 ns t f Current fall time R G = 15 Ω, V G = ±15 V, 132 ns (2) off Turn-off switching energy dv/dt = 96 V/µs 1.36 mj t d(on) Turn-on delay time V CC = 6 V, I C = 25 A, 19 ns t r Current rise time R G = 15 Ω, V G = ±15 V, 16.2 ns (1) on Turn-on switching energy di/dt = 1274 A/µs, T J = 15 C 1.49 mj t d(off) Turn-off delay time V CC = 6 V, I C = 25 A, 122 ns t f Current fall time R G = 15 Ω, V G = ±15 V, 216 ns (2) off Turn-off switching energy dv/dt = 82 V/µs, T J = 15 C 1.85 mj t SC Short-circuit withstand time V CC 6 V, V G 15 V, T Jstart 15 C 1 µs R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink ach IGBT C/W ach IGBT, λ grease = 1 W/(m C).79 C/W Diode 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Absolute maximum ratings of the diode, brake stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current (T C = 1 C) 25 A I (1) FP Pulsed forward current (t p = 1 ms) 5 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 8. lectrical characteristics of the diode, brake stage V F (terminal) Forward voltage I F = 25 A I F = 25 A, T J = 15 C V t rr Reverse recovery time - 19 ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, µc I rrm Reverse recovery current V G = ±15 V, di/dt = 129 A/μs - 29 A rec Reverse recovery energy -.74 mj DS Rev 3 page 5/17

6 Converter stage t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, µc I rrm Reverse recovery current V G = ±15 V, di/dt = 1274 A/μs, T J = 15 C - 41 A rec Reverse recovery energy mj R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink ach diode C/W ach diode, λ grease = 1 W/(m C) -.85 C/W 1.3 Converter stage Limiting values at T J = 25 C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Symbol Description Value Unit V RRM Repetitive peak reverse voltage 16 V I F RMS forward current 5 A I Forward surge current t p = 1 ms, T C = 25 C 45 FSM Forward surge current t p = 1 ms, T C = 15 C 365 A I²t t p = 1 ms, T C = 25 C 112 t p = 1 ms, T C = 15 C 666 A²s T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C Table 1. lectrical characteristics of the bridge rectifiers V F (terminal) Forward voltage I F = 25 A I F = 25 A, T J = 15 C -.92 V I R Reverse current T J = 15 C, V R = 16 V - 1 ma R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink ach diode C/W ach diode, λ grease = 1 W/(m C) -.95 C/W DS Rev 3 page 6/17

7 NTC 1.4 NTC Table 11. NTC temperature sensor, considered as stand-alone Symbol Parameter Test condition Min. Typ. Max. Unit R 25 Resistance T = 25 C 5 kω R 1 Resistance T = 1 C 493 Ω ΔR/R Deviation of R % B 25/5 B-constant 3375 K B 25/8 B-constant 3411 K T Operating temperature range C Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG NTC R (Ω) GADG NTCZ max 6 min typ T C ( C) T C ( C) 1.5 Package Table 12. ACPACK 2 package Symbol Parameter Min. Typ. Max. Unit V isol Isolation voltage (AC voltage, t = 6 s) 25 Vrms T stg Storage temperature C CTI Comparative tracking index 2 L s Stray inductance module P1 - W loop 33.5 nh R s Module single lead resistance, terminal to chip 3.6 mω DS Rev 3 page 7/17

8 lectrical characteristics (curves) 2 lectrical characteristics (curves) Figure 3. IGBT output characteristics (V G = 15 V, terminal) Figure 4. IGBT output characteristics (T J = 15 C, terminal) Ic (A) IGBT OC15 I C (A) IGBT OC V 13 V 4 T J = 25 C 4 17 V 15 V 11 V 3 T J = 15 C V V C (V) V C (V) Figure 5. IGBT transfer characteristics (V C = 15 V, terminal) Figure 6. IGBT collector current vs case temperature I C (A) IGBT TCH I C (A) IGBT CCT T J = 15 C T J = 25 C 2 1 V CC = 15 V, T J 175 C V G (V) T C ( C) DS Rev 3 page 8/17

9 lectrical characteristics (curves) Figure 7. Switching energy vs gate resistance (mj) IGBT SLG V CC = 6 V, I C = 25 A, V G = ±15 V Figure 8. Switching energy vs collector current (mj) IGBT SLC V CC = 6 V, V G = ±15 V, R G = 15 Ω 4 on (TJ = 15 C) 3 on (TJ = 15 C) off (TJ = 25 C) 3 on (TJ = 25 C) 2 off (TJ = 15 C) 2 1 off (TJ = 25 C) off (TJ = 15 C) 1 on (TJ = 25 C) R G (Ω) I C (A) Figure 9. IGBT reverse biased safe operating area (RBSOA) I C (A) 5 IGBT FSOA T J = 125 C, V G = ±15 V, R G = 15 Ω Figure 1. Diode forward characteristics (terminal) I F (A) IGBT DVF T J = 15 C T J = 25 C V C (V) V F (V) Figure 11. Diode reverse recovery energy vs diode current slope rec (mj) V C = 6 V, I F = 25 A, V G = ±15 V IGBT RR T j = 15 C Figure 12. Diode reverse recovery energy vs forward current rec IGBT DVF (mj) V C = 6 V, R G = 15 Ω, 2.8 V G = ±15 V T j = 15 C.8.4 T j = 25 C T j = 25 C di/dt (A/μs) IF (A) DS Rev 3 page 9/17

10 lectrical characteristics (curves) Figure 13. Diode reverse recovery energy vs gate resistance Figure 14. Converter diode forward characteristics (terminal) rec (mj) IGBT STR V CC = 6 V, I F = 25 A, V G = ±15 V I F (A) IGBT DVFC 2. 4 T j = 15 C 1.6 T j =15 C T j = 25 C 2 1 T j = 25 C R G (Ω) V F (V) Figure 15. IGBT thermal impedance Figure 16. Inverter diode thermal impedance Zth( C/W) GIPG ZTH Zth( C/W) IGBT ZTHD Zth(typ)JH 1 Zth(typ)JH Zth(max)JC 1 Zth(max)JC JC RC - Foster Thermal Network i r i ( C/W) τ i(s) JH RC - Foster Thermal Network i r i ( C/W) τ i(s) t (s) JC RC - Foster Thermal Network i r i ( C/W) τ i(s) JH RC - Foster Thermal Network i r i ( C/W) τ i(s) t (s) DS Rev 3 page 1/17

11 Test circuits 3 Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit G C A A L=1 µh k k + R G B B G C 3.3 µf D.U.T 1 µf V CC k k - k k AM154v1 AM155v1 Figure 2. Diode reverse recovery waveform Figure 19. Switching waveform 9% VG 1% 9% VC Tr(Voff) 1% Tcross 9% 25 IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% AM156v1 DS Rev 3 page 11/17

12 Topology and pin description 4 Topology and pin description Figure 21. lectrical topology and pin description P P1 G1 G3 G5 L1 L2 L3 T1 GB B U V W G2 G4 G6 T2 N NB U V W Figure 22. Package top view with CIB pinout W W G3 V V G1 U U L3 L3 G5 T2 P1 P1 L2 L2 L1 T1 B L1 P P W W G6 V V G4 U U G2 NB GB N N GADG SA DS Rev 3 page 12/17

13 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of COPACK packages, depending on their level of environmental compliance. COPACK specifications, grade definitions and product status are available at: COPACK is an ST trademark. DS Rev 3 page 13/17

14 W W G3 V V G1 U U T2 T1 W G5 W G6 V V G4 U U G2 P1 B NB P1 GB L1 L1 L3 L2 L2 P N L3 P N A2C25S12M3 ACPACK 2 CIB solder pins package information 5.1 ACPACK 2 CIB solder pins package information Figure 23. ACPACK 2 CIB solder pins package outline (dimensions are in mm) BSC 15.5±.5 12±.35 Detail A 3.5 RF x45 A A 56.7±.3 51± ± ±.2 1.3± ±.5 48±.3 37 RF 42.5±.2 53± RF ±.3 2.5± BSC 4.5± RF _ACPACK2_CIB_solderable_pins The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DS Rev 3 page 14/17

15 Revision history Table 13. Document revision history Date Revision Changes 2-Oct Initial release. 7-Mar Nov Removed maturity status indication from cover page. The document status is production data. Modified features on cover page. Updated Figure 7. Switching energy vs collector current, Figure 14. IGBT thermal impedance and Figure 15. Inverter diode thermal impedance. Updated Figure 22. ACPACK 2 CIB solder pins package outline (dimensions are in mm). Minor text changes. Added Figure 6. IGBT collector current vs case temperature. Minor text changes. DS Rev 3 page 15/17

16 Contents Contents 1 lectrical ratings Inverter stage IGBTs Diode Brake stage IGBT Diode Converter stage NTC Package lectrical characteristics (curves) Test circuits Topology and pin description Package information ACPACK 2 CIB solder pins package information...14 Revision history...15 DS Rev 3 page 16/17

17 IMPORTANT NOTIC PLAS RAD CARFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 3 page 17/17

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