STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

Transcription

1 Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 I C = 4 A Co-packaged protection diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V CE(sat) temperature coefficient G(1) C(2) Applications Welding Power factor correction Description E(3) G1E3C2D The newest IGBT 65 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V CE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA4HP65FB2 Product summary Order code Marking Package Packing STGWA4HP65FB2 G4HP65FB2 TO-247 long leads Tube DS Rev 2 - July 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = V) 65 V I Continuous collector current at T C = 25 C 72 A C Continuous collector current at T C = 1 C 45 A I CP (1) Pulsed collector current 12 A V GE Gate-emitter voltage ±2 V I Continuous forward current at T C = 25 C 5 F Continuous forward current at T C = 1 C 5 A I FP Pulsed forward current 1 A P TOT Total dissipation at T C = 25 C 227 W T STG Storage temperature range -55 to 15 C T J Operating junction temperature range -55 to 175 C 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT.66 thjc Thermal resistance junction-case diode 5 C/W R thja Thermal resistance junction-ambient 5 DS Rev 2 page 2/16

3 Electrical characteristics 2 Electrical characteristics T C = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage V GE = V, I C = 1 ma 65 V V GE = 15 V, I C = 4 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 4 A, T J = 125 C V GE = 15 V, I C = 4 A, T J = 175 C V I F = 5 A V F Forward on-voltage I F = 5 A, T J = 125 C 1.85 V I F = 5 A, T J = 175 C 1.75 V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current V GE = V, V CE = 65 V 25 µa I GES Gate-emitter leakage current V CE = V, V GE = ±2 V ±25 na Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance C oes Output capacitance V CE = 25 V, f = 1 MHz, V GE = V C res Reverse transfer capacitance pf Q g Total gate charge V CC = 52 V, I C = 4 A, Q ge Gate-emitter charge V GE = to 15 V Q gc Gate-collector charge (see Figure 27. Gate charge test circuit) nc Table 5. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time V CC = 4 V, I C = 4 A, ns t f Current fall time V GE = 15 V, R G = 4.7 Ω ns E (1) off Turn-off switching energy (see Figure 26. Test circuit for inductive load switching) µj DS Rev 2 page 3/16

4 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time V CC = 4 V, I C = 4 A, t f Current fall time V GE = 15 V, R G = 4.7 Ω, ns T J = 175 C ns E (1) off Turn-off switching energy (see Figure 26. Test circuit for inductive µj load switching) 1. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 5 A, V R = 4 V, V GE = 15 V, di/dt = 1 A/µs nc A di rr /dt Peak rate of fall of reverse (see Figure 29. Diode reverse recovery recovery current during t b waveform) A/µs E rr Reverse recovery energy µj t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 5 A, V R = 4 V, nc I rrm Reverse recovery current V GE = 15 V, di/dt = 1 A/µs, A T J = 175 C di rr /dt Peak rate of fall of reverse recovery current during t (see Figure 29. Diode reverse recovery b waveform) A/µs E rr Reverse recovery energy µj DS Rev 2 page 4/16

5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature P TOT (W) IGBT PDT I C (A) IGBT CCT TJ 175 C 2 VGE 15 V, TJ 175 C T C ( C) T C ( C) Figure 3. Output characteristics (T J = 25 C) Figure 4. Output characteristics (T J = 175 C) I C (A) 1 VGE = 15 V VGE = 13 V GADG OCH VGE = 11 V I C (A) 1 GADG OCH VGE = 15 V VGE = 11 V 8 8 VGE = 13 V 6 VGE = 9 V 6 VGE = 9 V VGE = 7 V V CE (V) 2 VGE = 7 V V CE (V) Figure 5. V CE(sat) vs junction temperature Figure 6. V CE(sat) vs collector current V CE(sat) (V) 2.3 VGE = 15 V IGBT VCET IC = 8 A V CE(sat) (V) VGE = 15 V IGBT VCEC TJ = 175 C TJ = 25 C IC = 4 A IC = 2 A TJ = -4 C T J ( C) I C (A) DS Rev 2 page 5/16

6 Electrical characteristics (curves) Figure 7. Forward bias safe operating area Figure 8. Transfer characteristics I C (A) GADG SOA Single pulse, T C = 25 C, T J 175 C, V GE = 15 V I C (A) 1 V CE = 6 V GADG TCH t p = 1 µs t p = 1 µs t p = 1 µs t p = 1 ms V CE (V) 2 T J = 175 C T J = 25 C V GE (V) Figure 9. Diode V F vs forward current Figure 1. Normalized V GE(th) vs junction temperature V F (V) 2.4 T J = 25 C IGBT DVF T J = -4 C T J = 175 C V GE(th) (norm.) IGBT NVGE V CE = V GE IC = 1 ma I F (A) T J ( C) Figure 11. Normalized V (BR)CES vs junction temperature Figure 12. Capacitance variations V (BR)CES (norm.) IGBT NVBR C (pf) GADG CVR 1.8 I C = 1 ma f = 1 MHz Cies Coes Cres T J ( C) V CE (V) DS Rev 2 page 6/16

7 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current V GE (V) 15 GADG QVG V CC = 52 V, I C = 4 A, I G = 1 ma E (mj) 1.6 V CC = 4 V, R G = 4.7 Ω, V GE = 15 V, TJ = 175 C IGBT SLC E off Q g (nc) I C (A) Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage E (mj).8.7 IGBT SLT V CC = 4 V, I C = 4 A, R G = 4.7 Ω, V GE = 15 V E off E (mj) 1 I C = 4 A, R G = 4.7 Ω, VGE = 15 V, T J = 175 C IGBT SLV.6.8 E off T J ( C) V CE (V) Figure 17. Switching energy vs gate resistance Figure 18. Switching times vs collector current E (mj) 1.2 I C = 4 A, V CC = 4 V, V GE = 15 V, T J = 175 C IGBT SLG t (ns) IGBT STC 1.1 t d(off) E OFF t f V CC = 4 V, V GE = 15 V, R G = 4.7 Ω, T J = 175 C R G (Ω) I C (A) DS Rev 2 page 7/16

8 Electrical characteristics (curves) Figure 19. Switching times vs gate resistance t (ns) V CC = 4 V, V GE = 15 V, I C = 4 A, T J = 175 C IGBT SLG Figure 2. Reverse recovery current vs diode current slope Irrm IGBT RRC (A) V CC =4 V, V GE = 15 V, I F = 5 A, 12 T J =175 C 1 2 t d(off) t r R G (Ω) di/dt (A/µs) Figure 21. Reverse recovery time vs diode current slope trr (ns) IGBT RRT V CC = 4 V, V GE = 15 V, I F = 5 A, T j = 175 C Figure 22. Reverse recovery charge vs diode current slope Qrr (µc) IGBT RRQ V CC = 4 V, V GE = 15 V, I F = 5 A, T j = 175 C di/dt (A/µs) di/dt (A/µs) Figure 23. Reverse recovery energy vs diode current slope Err (μj) IGBT RRE V CC = 4 V, V GE = 15 V, I F = 5 A, T j = 175 C di/dt (A/µs) DS Rev 2 page 8/16

9 Electrical characteristics (curves) Figure 24. Thermal impedance for IGBT K δ=.5 ZthTO2T_B Zth=k Rthj-c δ=tp/t Single pulse tp(s) tp t Figure 25. Thermal impedance for diode DS Rev 2 page 9/16

10 Test circuits 3 Test circuits Figure 26. Test circuit for inductive load switching Figure 27. Gate charge test circuit C A A V CC G L=1 µh R L + E R G B B G C 3.3 µf E D.U.T 1 µf V CC V i V GMAX 22 μf I G = CONST 2.7 kω 47 kω 1 Ω D.U.T. - P W 1 kω AM154v1 GADG IG Figure 28. Switching waveform Figure 29. Diode reverse recovery waveform di/dt Q rr 9% t rr VG 1% I F t s t f VCE Tr(Voff) Tcross 9% 9% 1% I RRM I RRM 1% V RRM t IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% dv/dt AM156v1 GADG SA DS Rev 2 page 1/16

11 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 2 page 11/16

12 TO-247 long leads package information 4.1 TO-247 long leads package information Figure 3. TO-247 long leads package outline _2_F DS Rev 2 page 12/16

13 TO-247 long leads package information Table 7. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A A A b b b c D E E E e L L1 4.3 P Q S DS Rev 2 page 13/16

14 Revision history Table 8. Document revision history Date Version Changes 18-Apr Initial release. The document status is production data. 5-Jul Modified Table 5. Switching characteristics (inductive load). Modified Figure 15. Switching energy vs temperature. Minor text changes. DS Rev 2 page 14/16

15 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information TO-247 long leads package information...11 Revision history...14 DS Rev 2 page 15/16

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