IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature Rated at 175 C Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. G C E n-channel V CES = V PD- 991 I C = A, T C = C t sc > µs, T J =15 C V CE(on) typ. = 1.V TO- Absolute Maximum Ratings Full-Pak Parameter Max. Units V CES Collector-to-Emitter Voltage V I T C = 5 C Continuous Collector Current 19 I T C = C Continuous Collector Current A I CM Pulse Collector Current (Ref.Fig.C.T.5) 3 I LM Clamped Inductive Load current c 3 I T C = 5 C Diode Continuous Forward Current 19 I T C = C Diode Continuous Forward Current I FM Diode Maximum Forward Current 3 V ISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 5 V V GE Gate-to-Emitter Voltage ± P T C = 5 C Maximum Power Dissipation 5 W P T C = C Maximum Power Dissipation T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature for sec. 3 (.3 in. (1.mm) from case) Mounting Torque, -3 or M3 Screw lbf.in (1.1N.m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT.9 R θjc Junction-to-Case- Diode. C/W R θcs Case-to-Sink, flat, greased surface.5 R θja Junction-to-Ambient, typical socket mount Wt Weight. g 1 /3/3
2 Electrical T J = 5 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (5 C-15 C) 1.. I C = 15A, V GE = 15V, T J = 5 C 5,,7 V CE(on) Collector-to-Emitter Voltage.5.5 V I C = 15A, V GE = 15V, T J = 15 C 9,,11.. I C = 15A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 5µA 9,,11 V GE(th) / T J Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C = 1mA (5 C-15 C) gfe Forward Transconductance S V CE = 5V, I C = 15A, PW = µs V GE = V, V CE = V I CES Zero Gate Voltage Collector Current 3 5 µa V GE = V, V CE = V, T J = 15 C 9 V GE = V, V CE = V, T J = 175 C V FM Diode Forward Voltage Drop V I F = 15A, V GE = V I F = 15A, V GE = V, T J = 15 C I F = 15A, V GE = V, T J = 175 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V, V CE = V Switching T J = 5 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge (turn-on) 5 I C = 15A 3 Q ge Gate-to-Emitter Charge (turn-on) 7. nc V CC = V CT1 Q gc Gate-to-Collector Charge (turn-on) 39 V GE = 15V E on Turn-On Switching Loss 7 I C = 15A, V CC = V CT E off Turn-Off Switching Loss 33 µj V GE = 15V, R G = Ω, L = 1.7mH E tot Total Switching Loss 1 55 Ls= 15nH, T J = 5 C d t d(on) Turn-On delay time 3 39 I C = 15A, V CC = V t r Rise time 5 35 ns V GE = 15V, R G = Ω, L = 1.7mH CT t d(off) Turn-Off delay time Ls= 15nH, T J = 5 C t f Fall time 1 53 E on Turn-On Switching Loss 5 I C = 15A, V CC = V CT E off Turn-Off Switching Loss 57 µj V GE = 15V, R G = Ω, L = 1.7mH 13,15 E tot Total Switching Loss Ls= 15nH, T J = 15 C d WF1,WF t d(on) Turn-On delay time 3 39 I C = 15A, V CC = V 1, t r Rise time 5 35 ns V GE = 15V, R G = Ω, L = 1.7mH CT t d(off) Turn-Off delay time 19 7 Ls= 15nH, T J = 15 C WF1 t f Fall time 5 73 WF L E Internal Emitter Inductance 7.5 nh Measured 5 mm from package C ies Input Capacitance 5 75 V GE = V C oes Output Capacitance 15 pf V CC = 3V C res Reverse Transfer Capacitance 3 f = 1.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = 15 C, I C = 3A, Vp = V V CC =5V,V GE = +15V to V,R G = Ω CT SCSOA Short Circuit Safe Operating Area µs T J = 15 C, Vp = V, R G = Ω CT3 V CC =3V,V GE = +15V to V WF I SC (PEAK) Peak Short Circuit Collector Current A WF E rec Reverse Recovery Energy of the Diode 7 37 µj T J = 15 C 17,1,19 t rr Diode Reverse Recovery Time 7 7 ns V CC = V, I F = 15A, L = 1.7mH,1 I rr Peak Reverse Recovery Current 3 3 A V GE = 15V, R G = Ω CT,WF3 Q rr Diode Reverse Recovery Charge 9 79 nc di/dt = 75A/µs Vcc =% (V CES ), V GE = 15V, L =µh, R G = Ω. Energy losses include "tail" and diode reverse recovery.
3 I C (A) I C A) I C (A) P tot (W) T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. - Power Dissipation vs. Case Temperature µs µs 1 1ms.1 DC 1 1 Fig. 3 - Forward SOA T C = 5 C; T J 15 C Fig. - Reverse Bias SOA T J = 15 C; V GE =15V 3
4 I CE (A) I F (A) I CE (A) I CE (A) V GE = 1V VGE = 15V VGE = V VGE = V VGE =.V 1 V GE = 1V VGE = 15V VGE = V VGE = V VGE =.V Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = µs Fig. - Typ. IGBT Output Characteristics T J = 5 C; tp = µs V GE = 1V VGE = 15V VGE = V VGE = V VGE =.V C 5 C 15 C V F (V) Fig. 7 - Typ. IGBT Output Characteristics Fig. - Typ. Diode Forward Characteristics T J = 15 C; tp = µs tp = µs
5 I CE (A) I CE = 7.5A I CE = 15A I CE = 3A I CE = 7.5A I CE = 15A I CE = 3A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = 5 C 7 1 T J = 5 C T J = 15 C 1 5 I CE = 7.5A I CE = 15A I CE = 3A 3 T J = 15 C T J = 5 C V GE (V) V GE (V) Fig Typical V CE vs. V GE Fig. - Typ. Transfer Characteristics T J = 15 C V CE = 5V; tp = µs 5
6 Energy (µj) Swiching Time (ns) Swiching Time (ns) Energy (µj) E OFF E ON td OFF t F td ON t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 15 C; L=1.7mH; V CE = V R G = Ω; V GE = 15V Fig. 1 - Typ. Switching Time vs. I C T J = 15 C; L=1.7mH; V CE = V R G = Ω; V GE = 15V E OFF E ON td OFF t F td ON t R R G (Ω) R G (Ω) Fig Typ. Energy Loss vs. R G T J = 15 C; L=1.7mH; V CE = V I CE = 15A; V GE = 15V Fig. - Typ. Switching Time vs. R G T J = 15 C; L=1.7mH; V CE = V I CE = 15A; V GE = 15V
7 I RR (A) Q RR (nc) I RR (A) I RR (A) 5 R G = Ω 15 R G = 7 Ω R G = Ω R G = Ω I F (A) R G (Ω) Fig Typical Diode I RR vs. I F T J = 15 C Fig. 1 - Typical Diode I RR vs. R G T J = 15 C; I F = 15A 15 3A 15A 7.5A 5 Ω Ω 7Ω Ω di F /dt (A/µs) di F /dt (A/µs) Fig. 19- Typical Diode I RR vs. di F /dt V CC = V; V GE = 15V; I CE = 15A; T J = 15 C Fig. - Typical Diode Q RR V CC = V; V GE = 15V;T J = 15 C 7
8 Capacitance (pf) V GE (V) Energy (µj) 1 Ω Ω 7 Ω Ω I F (A) Fig. 1 - Typical Diode E RR vs. I F T J = 15 C Cies 1 3V V Coes Cres Q G, Total Gate Charge (nc) Fig. - Typ. Capacitance vs. V CE Fig. 3 - Typical Gate Charge vs. V GE V GE = V; f = 1MHz I CE = 15A; L = 5µH
9 Thermal Response ( Z thjc ) 1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R R R 3 R 3 τ J τ J τ 1 τ 1 τ τ τ 3 τ 3 Ci= τi/ri Ci τi/ri τ C τ Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E- 1E t 1, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R R 3 R 1 R R 3 τ J τ J τ 1 τ 1 τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri R Ri ( C/W) τi (sec) R.31. τ τ τ C τ Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E- 1E t 1, Rectangular Pulse Duration (sec) Fig 5. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 9
10 L 1K DUT L VCC V + - Rg DUT V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit Driver diode clamp / DUT L DC DUT 3V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit
11 3 VCE (V) tf 9% I CE 5% V CE Eoff Loss 5% I CE time(µs) Fig. WF1- Typ. Turn-off Loss T J = 15 C using Fig. CT ICE (A) VCE (V) tr TEST CURRENT 9% test current % test current 5% V CE Eon Loss... time (µs) Fig. WF- Typ. Turn-on Loss T J = 15 C using Fig. CT ICE (A) 5 VF (V) Peak I RR Q RR t RR % Peak IRR IF (A) VCE (V) ICE (A) time (µs) Time (us) Fig. WF3- Typ. Diode Recovery T J = 15 C using Fig. CT. Fig. WF- Typ. S.C T C = 15 C using Fig. CT
12 TO- Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO- Full-Pak Part Marking Information E XAMPL E : T H IS IS AN IR F IG WITH ASSEMBLY LOT CODE 33 AS S E MB LE D ON WW 1999 IN T H E AS S E MB L Y LINE "K" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE IRFIG 9K 3 3 PART NUMBER DATE CODE YEAR 9 = 1999 WEEK LINE K TO- FullPak packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 95, USA Tel: (3) 5-75 TAC Fax: (3) Visit us at for sales contact information./3
13 Note: For the most current drawings please refer to the IR website at:
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Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
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Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD -95441 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to
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Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
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Ultrafast Soft Recovery Diode 50EBU04 Features Ultrafast Recovery 75 C Operating unction Temperature Screw Mounting Only Lead-Free Plating Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
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Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
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IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
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P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
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PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized
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