=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

Transcription

1 PD IRGP2B12U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT UltraFast Non Punch Through (NPT) Technology 1 µs Short Circuit capability Square RBSOA Positive V CE (on) Temperature Coefficient Extended lead TO-247 package G C V CES = 12V V CE(on) typ. = 3.5V Benefits Benchmark efficiency above 2KHz Optimized for Welding, UPS, and Induction Heating applications Rugged with UltraFast performance Low EMI Significantly Less Snubber required Excellent Current sharing in Parallel operation Longer leads for easier mounting E n-channel V GE = 15V, I C = 2A, C Absolute Maximum Ratings Thermal Resistance TO-247AD Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 12 V I T C = C Continuous Collector Current (Fig.1) 4 I T C = 1 C Continuous Collector Current (Fig.1) 2 A I CM Pulsed Collector Current (Fig.3, Fig. CT.5) 12 I LM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 12 V GE Gate-to-Emitter Voltage ± 2 V E T C = C Avalanche Energy, single pulse 65 I C = A, V CC = 5V, R GE = ohm L = 2µH (Fig. CT.6) mj P T C = C Maximum Power Dissipation (Fig.2) 3 P T C = 1 C Maximum Power Dissipation (Fig.2) 12 W T J Operating Junction and -55 to + 15 T STG Storage Temperature Range C Soldering Temperature, for 1 seconds 3, (.63 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 1 lbf in (1.1N m) Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.42 R θcs Case-to-Sink, flat, greased surface.24 C/W R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.21) g (oz) Z θjc Transient Thermal Impedance Junction-to-Case (Fig.18) 1 3/6/1

2 IRGP2B12U-E Electrical TJ = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V,I c = µa V (BR)CES / Tj Temperature Coeff. of Breakdown Voltage +1.2 V/ C V GE = V, I c = 1 ma ( -1 o C ) I C = 2A, V GE = 15V 5, 6 Collector-to-Emitter Saturation I C = A, V GE = 15V 7, 8 V CE(on) Voltage V I C = 4A, V GE = 15V I C = 2A, V GE = 15V, T J = 1 C I C = A, V GE = 15V, T J = 1 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = µa 8,9,1,11 V GE(th) / Tj Temperature Coeff. of Threshold Voltage mv/ o C V CE = V GE, I C = 1 ma ( -1 o C) g fe Forward Transconductance S V CE = 5V, I C = 2A, PW=8µs V GE = V, V CE = 12V I CES Zero Gate Voltage Collector Current µa V GE = V, V CE = 12V, T J =1 C V GE = V, V CE = 12V, T J =15 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. Q g Total Gate charge (turn-on) I C = 2A 17 Q ge Gate - Emitter Charge (turn-on) nc V CC = 6V CT 1 Q gc Gate - Collector Charge (turn-on) V GE = 15V E on Turn-On Switching Loss * I C = 2A, V CC = 6V CT 4 E off Turn-Off Switching Loss * 4 65 µj V GE = 15V, Rg = 5Ω, L = 2µH WF1 E tot Total Switching Loss * T J = o C, Energy losses include tail and diode reverse recovery WF2 E on Turn-on Switching Loss * Ic = 2A, V CC = 6V 12, 14 E off Turn-off Switching Loss * µj V GE = 15V, Rg = 5Ω, L = 2µH CT 4 E tot Total Switching Loss * T J = 1 o C, Energy losses include tail and diode reverse recovery td(on) Turn - on delay time 5 65 Ic = 2A, V CC = 6V 13, 15 tr Rise time 2 3 ns V GE = 15V, Rg = 5Ω, L = 2µH CT 4 td(off) Turn - off delay time T J = 1 o C WF1 tf Fall time WF2 C ies Input Capacitance 22 V GE = V C oes Output Capacitance 21 pf V CC = 3V 16 C res Reverse Transfer Capacitance 85 f = 1. MHz T J = 15 o C, Ic = 12A 4 RBSOA Reverse bias safe operating area FULL SQUARE V CC = 1V, V P = 12V CT 2 Rg = 5Ω, V GE = +15V to V T J = 15 o C CT 3 SCSOA Short Circuit Safe Operating Area µs V CC = 9V, V P = 12V WF3 Rg = 5Ω, V GE = +15V to V Le Internal Emitter Inductance 13 nh Measured 5 mm from the package. * Used Diode HF4D12ACE 2 WF1 & 2

3 IRGP2B12U-E Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature P t o t ( W ) T C ( C) T C ( C ) 1 Fig.3 - Forw ard S O A T C = C; Tj< 15 C 1 Fig.4 - R everse B ias S O A Tj = 15 C, V GE = 15V PULSED 1 2µ s 1µ s 1µ s 1 1 1ms 1 1 1ms DC V CE (V ) V CE (V )

4 IRGP2B12U-E 6 Fig.5 - T ypical IG B T O utput Characteristics Tj= -4 C; tp=3µs 6 Fig.6 - Ty pical IGBT Output Characteristics Tj= C ; tp=3µs V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8V V CE (V ) V CE (V) Fig.7 - Ty pical IG BT O utput Characteristics Tj=1 C; tp=3µs V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8V V CE (V) 4

5 IRGP2B12U-E Fig.98 - Ty pical V CE vs V GE Fig Ty pical V CE vs V GE Tj= -4 C Tj= C V C E ( V ) I CE =1A I CE =2A I CE =4A V C E ( V ) I CE =1A I CE =2A I CE =4A V GE (V) V GE (V) Fig Ty pical V CE vs V GE Fig Ty p. Transfer Characteristics Tj= 1 C V CE =2V; tp=2µ s T j= C T j=1 C V C E ( V ) I CE =1A I CE =2A I CE =4A V GE (V) T j=1 C T j= C V GE (V)

6 IRGP2B12U-E 6 Fig Ty pical Energy Loss vs Ic Fig Ty pical Switching Tim e vs Ic Tj=1 C; L=2µH; V CE =6V; Tj=1 C; L=2µH; V CE =6V; R g =22 Ω ; V GE =15V R g =22 Ω ; V GE =15V 1 5 Eon tdoff E n e r g y ( µ J Eoff t ( n S ) 1 tr tdon tf I C (A) I C (A) E n e r g y ( u J Fig Ty pical Energy Loss vs Rg Tj=1 C; L=2µH; V CE =6V; I CE =2A; V GE =15V Fig Typical Switching Tim e vs Rg Tj=1 C; L=2µH; V CE =6V; I CE =2A; V GE =15V Eon tdoff Eoff 1 tdon 12 tr 1 tf R g (ohms) R g (ohms) t ( n S ) 6

7 IRGP2B12U-E Fig Typical Capacitance vs V CE V GE =V ; f=1m H z Fig T yp. G ate C h arg e vs. V GE I C =2A; L=6µH 1 16 C ies 14 6V C a p a c I t a n c e ( p 1 1 C oes V G E ( V ) V C res V CE (V ) Q G, T ota l G ate C h arg e (nc) 18 Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 1 θ 1 D = SINGLE PULSE t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + T C t 1, Rectangular Pulse Duration (sec) 7 P DM

8 IRGP2B12U-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L 1K DUT L VCC 8 V + - Rg DUT 1V Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit Driver DIODE CLAMP L DC 9V DUT Rg DUT / DRIVER VCC Fig. CT.5 - Resistive Load Circuit Fig. CT.6 - Unclamped Inductive Load Circuit R = VCC ICM L DUT VCC Rg DUT VCC Rg 8

9 IRGP2B12U-E Fig. WF.1 - Typ. Turn-off Loss Tj=1 C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Tj=1 C using Fig. CT % I CE % test current V C E ( V 4 t f 1 I C E ( A V C E ( V 4 t r TEST CURRENT 4 I C E ( A 2 5% V CE 5 2 1% test current 5% V CE 2 5% I CE Eon Loss E of f Loss t i m e (µs) t i m e (µs) Fig. WF.3- Typ. S.C. T C =15 C using Fig. CT V C E ( V 6 1 I C E ( A t i m e (µs) 9

10 IRGP2B12U-E TO-247AD Case Outline and Dimensions DRG. No: Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.3/1 1

11 Note: For the most current drawings please refer to the IR website at: