IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
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1 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. G IRGB8B6KPbF IRGS8B6KPbF IRGSL8B6KPbF C E n-channel PD B V CES = 6V I C = 19A t sc >1µs, T J =175 C V CE(on) typ. = 1.8V TO-22AB IRGB8B6KPbF D 2 Pak IRGS8B6KPbF TO-262 IRGSL8B6KPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 28 I T C = 1 C Continuous Collector Current 19 I NOMINAL Nominal Current 8. A I CM Pulse Collector Current (Ref.Fig.C.T.5) 3 I LM Clamped Inductive Load current c 3 V GE Gate-to-Emitter Voltage ±2 V P T C = 25 C Maximum Power Dissipation 167 W P T C = 1 C Maximum Power Dissipation 83 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Storage Temperature Range, for 1 sec. 3 (.63 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT g.9 R θcs Case-to-Sink, flat, greased surface.5 C/W R θja Junction-to-Ambient, typical socket mount d 62 R θja Junction-to-Ambient (PCB Mount, Steady State)e Weight 1. g 1 1/25/21
2 IRGB/S/SL8B6KPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.57 V/ C V GE = V, I C = 1mA (25 C-15 C) V CE(on) Collector-to-Emitter Voltage I C = 8.A, V GE = 15V, T J = 25 C 5,6, V I C = 8.A, V GE = 15V, T J = 15 C 8,9, I C = 8.A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µA 8,9,1, V GE(th) / T J Threshold Voltage temp. coefficient -9.5 mv/ C V CE = V GE, I C = 1mA (25 C-125 C) 11 gfe Forward Transconductance 3.7 S V CE = 5V, I C = 8.A, PW = 8µs I CES Zero Gate Voltage Collector Current V GE = V, V CE = 6V 2 5 µa V GE = V, V CE = 6V, T J = 15 C V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge (turn-on) 29 I C = 8.A 17 Q ge Gate-to-Emitter Charge (turn-on) 3.7 nc V CC = 8V CT1 Q gc Gate-to-Collector Charge (turn-on) 1 V GE = 15V E on Turn-On Switching Loss I C = 8.A, V CC = V CT E off Turn-Off Switching Loss µj V GE = 15V, R G = 5Ω, L = 1.1mH E tot Total Switching Loss T J = 25 C f t d(on) Turn-On delay time I C = 8.A, V CC = V t r Rise time ns V GE = 15V, R G = 5Ω, L = 1.1mH CT t d(off) Turn-Off delay time 1 15 T J = 25 C t f Fall time 32 2 E on Turn-On Switching Loss I C = 8.A, V CC = V CT E off Turn-Off Switching Loss µj V GE = 15V, R G = 5Ω, L = 1.1mH 12,1 E tot Total Switching Loss 9 68 T J = 15 C f WF1,WF2 t d(on) Turn-On delay time I C = 8.A, V CC = V 13,15 t r Rise time ns V GE = 15V, R G = 5Ω, L = 1.1mH CT t d(off) Turn-Off delay time T J = 15 C WF1 t f Fall time 56 WF2 C ies Input Capacitance V GE = V C oes Output Capacitance 38 pf V CC = 3V 16 C res Reverse Transfer Capacitance 16 f = 1.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = 15 C, I C = 3A, Vp = 6V V CC =5V,V GE = +15V to V,R G = 5Ω T J = 15 C, Vp = 6V, R G = 1Ω SCSOA Short Circuit Safe Operating Area 1 µs V CC =36V,V GE = +15V to V WF3 CT2 CT3 Notes to are on page
3 I C (A) I C A) I C (A) P tot (W) IRGB/S/SL8B6KPbF T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µs 1 1ms 1 1ms 1.1 DC Fig. 3 - Forward SOA T C = 25 C; T J 15 C Fig. - Reverse Bias SOA T J = 15 C; V GE =15V 3
4 I CE (A) I CE (A) I CE (A) IRGB/S/SL8B6KPbF V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 8µs
5 I CE (A) IRGB/S/SL8B6KPbF I CE =.A I CE = 8.A I CE = 16A I CE =.A I CE = 8.A I CE = 16A V GE (V) V GE (V) Fig. 8 - Typical V CE vs. V GE T J = - C Fig. 9 - Typical V CE vs. V GE T J = 25 C T J = 25 C T J = 15 C I CE =.A I CE = 8.A I CE = 16A 2 T J = 15 C 2 T J = 25 C V GE (V) V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 15 C Fig Typ. Transfer Characteristics V CE = 36V; tp = 1µs 5
6 Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRGB/S/SL8B6KPbF td OFF 3 E OFF 1 2 t F 1 E ON td ON t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 15 C; L=1.1mH; V CE = V, R G = 5Ω; V GE = 15V Fig Typ. Switching Time vs. I C T J = 15 C; L=1.1mH; V CE = V R G = 5Ω; V GE = 15V E ON 5 E OFF 1 td OFF t F td ON 1 t R R G (Ω) R G (Ω) Fig. 1 - Typ. Energy Loss vs. R G T J = 15 C; L=1.1mH; V CE = V I CE = 8.A; V GE = 15V Fig Typ. Switching Time vs. R G T J = 15 C; L=1.1mH; V CE = V I CE = 8.A; V GE = 15V 6
7 Thermal Response ( Z thjc ) Capacitance (pf) V GE (V) IRGB/S/SL8B6KPbF 1 Cies 16 Coes V 1 Cres 1 V Q G, Total Gate Charge (nc) Fig. 16- Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 8.A; L = 6µH 1 1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7
8 IRGB/S/SL8B6KPbF L 1K DUT L VCC 8 V + - Rg DUT 8V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver diode clamp / DUT L DC DUT 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit 8
9 IRGB/S/SL8B6KPbF tf Vce 1 5 tr Vce 2 Vce (V) 3 2 9% Ice 5% Vce 5% Ice 8 6 Ice (A) Vce (V) 3 2 Ice 9% Ice 1% Ice Ice (A) 1 Ice 2 1 5% Vce -1 Eoff Loss Time (us) Fig. WF1- Typ. Turn-off Loss T J = 15 C using Fig. CT. -2 Eon Loss Time (us) Fig. WF2- Typ. Turn-on Loss T J = 15 C using Fig. CT Vce (V) 2 Ice (A) Time (us) Fig. WF3- Typ. S.C T C = 15 C using Fig. CT.3 9
10 IRGB/S/SL8B6KPbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27& 2'( $66(%/('21::,17+($66(%/</,1(& Note: "P" in assembly line position indicates "Lead-Free",17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB package is not recommended for Surface Mount Application. 1
11 IRGB/S/SL8B6KPbF D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$1,5)6:,7+ $66(%/('21::,17+($66(%/</,1(/ 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 11
12 IRGB/S/SL8B6KPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7+,6,6$1,5// $66(%/('21::,17+($66(%/</,1(& 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 12
13 IRGB/S/SL8B6KPbF D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59).1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.15).32 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 1.9 (.29) 1.7 (.21) 11.6 (.57) 11. (.9) 16.1 (.63) 15.9 (.626) 1.75 (.69) 1.25 (.9) 15.2 (.69) (.61) 2.3 (.957) 23.9 (.91).72 (.136).52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.5) 27. (1.79) 23.9 (.91) 33. (1.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB.. INCLUDES FLANGE OUTER EDGE. 26. (1.39) 2. (.961) 3 3. (1.197) MAX. Notes: V CC = 8% (V CES ), V GE = 15V, L = 1µH, R G = 5Ω. This is only applied to TO-22AB package. ƒ This is applied to D 2 Pak, when mounted on 1" square PCB ( FR- or G-1 Material ). For recommended footprint and soldering techniques refer to application note #AN-99. Energy losses include "tail" and diode reverse recovery, using Diode HF3D6ACE. R θ is measured at T J of approximately 9 C. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 925, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.1/
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AUTOMOTIVE GRADE AUIRGP466D1 AUIRGP466D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses G Maximum Junction temperature
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