IRGPC40UD2 UltraFast CoPack IGBT

Transcription

1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency curve G E n-channel V ES = 6V V E(sat) GE = 5V, I = 2A Description o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. Absolute Maximum Ratings Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT.77 R θj Junction-to-ase - Diode.7 /W R θs ase-to-sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -77 TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 4 T = ontinuous ollector urrent 2 I M Pulsed ollector urrent 6 A I LM lamped Inductive Load urrent 6 I T = Diode ontinuous Forward urrent 5 I FM Diode Maximum Forward urrent 6 V GE Gate-to-Emitter Voltage ± 2 V P T = 25 Maximum Power Dissipation 6 W P T = Maximum Power Dissipation 65 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Revision

2 Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µA V (BR)ES/ T J Temp. oeff. of Breakdown Voltage.63 V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage I = 2A V GE = 5V 2.7 V I = 4A See Fig. 2, I = 2A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temp. oeff. of Threshold Voltage -3 mv/ V E = V GE, I = 25µA g fe Forward Transconductance 8 S V E = V, I = 2A I ES Zero Gate Voltage ollector urrent 25 µa V GE = V, V E = 6V 35 V GE = V, V E = 6V, T J = 5 V FM Diode Forward Voltage Drop.3.7 V I = 5A See Fig I = 5A, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 5 67 I = 2A Q ge Gate - Emitter harge (turn-on) 8.9 n V = 4V Q gc Gate - ollector harge (turn-on) 2 33 See Fig. 8 t d(on) Turn-On Delay Time 63 T J = 25 t r Rise Time 54 ns I = 2A, V = 48V t d(off) Turn-Off Delay Time 6 24 V GE = 5V, R G = Ω t f Fall Time 2 2 Energy losses include "tail" and E on Turn-On Switching Loss.65 diode reverse recovery. E off Turn-Off Switching Loss.25 mj See Fig. 9,,, 8 E ts Total Switching Loss.9 3. t d(on) Turn-On Delay Time 65 T J = 5, See Fig. 9,,, 8 t r Rise Time 53 ns I = 2A, V = 48V t d(off) Turn-Off Delay Time 28 V GE = 5V, R G = Ω t f Fall Time 2 Energy losses include "tail" and E ts Total Switching Loss 3. mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 5 V GE = V oes Output apacitance 9 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 7 ƒ =.MHz t rr Diode Reverse Recovery Time 42 6 ns T J = 25 See Fig T J = 25 4 I F = 5A I rr Diode Peak Reverse Recovery urrent A T J = 25 See Fig. 6.5 T J = 25 5 V R = 2V Q rr Diode Reverse Recovery harge 8 8 n T J = 25 See Fig T J = 25 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 88 A/µs T J = 25 See Fig. During t b 6 T J = 25 7 Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) V =8%(V ES ), V GE =2V, L=µH, R G = Ω, ( See fig. 9 ) Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -78

3 3 Load urrent (A) 2 6 % o f ra te d v o lta g e D u ty c y c le : 5 % T J = 2 5 T s in k = 9 G a te d ri v e a s s p e c ifie d T u rn -o n lo s s e s in c l u d e effects of reverse recovery P o w e r D is s ip a tio n = 3 5 W A. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-em itter urrent (A) T J = 25 T J = 5 V G E = 5V 2 µs P U LS E W IDTH V E, ollector-to-e mitter V oltage (V ) I, ollecto r-to -Em itter u rrent (A) T J = 5 T J = 2 5 V = V 5µ s P UL S E W ID TH V G E, G ate -to -E m itter V olta ge (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -79

4 Maximum D ollector urrent (A) V GE = 5V V E, ollector-to-em itter Voltage (V ) V G E = 5 V 8 µs P UL S E W ID TH I = 4 A I = 2 A I = A A T, ase Temperature ( ) T, ase Tem perature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Therm al Response (Z th J ).. D = SIN G LE P ULSE (TH ER MA L R E SP O NS E ) N otes:. D uty fac tor D = t / t t, R ectangular Pulse Duration (sec) PD M 2. P ea k T J = P D M x Z thj + T t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase -72

5 , ap ac ita nc e (pf ) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V, G a te -to -E m itte r V o lta g e (V ) G E V E = 4 V I = 2 A V E, o lle c to r-to -E m itte r V o lta g e (V ) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q, T o tal G a te h a rg e (n ) g Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 2.2 V = 48V V GE = 5V 2. T = 25 I = 2A R G, Gate Resistance (Ω) W Total Switching Losses (mj) R G = Ω V GE = 5V V = 48V. A T, ase Temperature ( ) I = 4A I = 2A I = A Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -72

6 Total Switching Losses (mj) R G = Ω T = 5 V = 48V V GE = 5V I, ollector-to-em itter urrent (A ) V G EE= 2 V T = 25 J S A FE O P E R A TING A RE A. A I, ollector-to-emitter urrent (A) V E, ollecto r-to-e m itter V oltage (V ) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SOA Instantaneous Forward urrent - I F (A) T J = 5 T J = 25 T J = Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent -722

7 V R = 2V T J = 25 T J = 25 V R = 2V T J = 25 T J = 25 8 I = 3A F t rr - (ns) 6 I F = 3A I F = 5A I IRRM - (A) I F = 5A 4 I = 5.A F I F = 5.A 2 di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 8 V R = 2V T J = 25 T J = 25 V R = 2V T J = 25 T J = 25 6 Q RR - (n) 4 I F = 5A I F = 5.A I F = 3A di(rec)m/dt - (A/µs) I F = 5.A I F = 5A I = 3A F 2 di f /dt - (A/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt -723

8 9% Vge +Vge Same type device as D.U.T. Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic dt t t Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f t2 % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTAGE AND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WAVEFORMS t4 Erec Vd id dt = t3 Vcc Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t r -724 t3 Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E rec, t rr, Q rr, I rr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 8e - Macro Waveforms for Test ircuit of Fig. 8a Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit Package Outline 3 - JEDE Outline TO-247A Section D - page D-3 t4

9 Note: For the most current drawings please refer to the IR website at: