GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:

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1 IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS Requirement Application: 3-Level-Applications IGBT, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V CES Collector-Emitter Blocking Voltage 0 V V GES Gate-Emitter Voltage ±20 V I C Continuous Collector Current T C = 80 A T C = 25 0 A I CM Repetitive Peak Collector Current T J = 1 0 A t SC Short Circuit Withstand Time >10 μs P D Maximum Power Dissipation per IGBT T C = 25 T Jmax =1 385 W Page 1 of 9 Rev /17/20

2 Electrical Characteristics of IGBT (T C =25 unless otherwise specified) Static characteristics Symbol Description Conditions Min Typ Max Unit V GE(th) Gate-Emitter Threshold Voltage I C = 1 ma, V CE = V GE V V CE(sat) Collector-Emitter Saturation Voltage I C = A, V GE = V T J = V T J = V I CES Collector-Emitter Leakage Current V GE = 0V, V CE = V CES, T J = 25 1 ma I GES Gate-Emitter Leakage Current V GE = 0V, V CE = V CES, T J = na C ies Input Capacitance V CE = 25V, V GE = 0V, 3.6 nf C oes Output capacitance f =1MHz 0. nf Switching Characteristics t d(on) Turn-on Delay Time T J = T J = ns t r Rise Time T J = T J = 125 ns t d(off) Turn-off Delay Time V CC = 0V,I C = A, T J = 25 1 T J = ns t f Fall Time R G = Ω,V GE = ±V, Inductive Load T J = T J = 125 ns E on Turn-on Switching Loss T J = T J = mj E off Turn-off Switching Loss T J = T J = mj Q g Total Gate Charge T J = nc RBSOA Reverse Bias Safe Operation Area I C =0A,V CC =480V,Vp=0V, Rg = 4.7Ω, V GE =+V to 0V, T J =0 C Trapezoid SCSOA Short Circuit Safe Operation Area V CC = 0V, V GE = V, T J = 0 5 μs R θjc Junction-To-Case (IGBT Part, Per Leg) 0.39 /W Page 2 of 9 Rev /17/20

3 Diode, Reverse Maximum Rated Values (T C =25 unless otherwise specified) V RRM Repetitive Peak Reverse Voltage 0 V I F Diode Continuous Forward Current A I FM Diode Maximum Forward Current 0 A Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditions Min Typ Max Unit V FM Forward Voltage I C = A, V GE = V T J = T J = V I rr Q rr E rec Peak Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Energy I F =A, di/dt =670A/μs, V rr = 0V, V GE = -V T J = 25 T J = T J = T J = T J = T J = A µc mj R θjc Junction-To-Case (Diode Part, Per Leg) 0.93 /W Diode, 3-Level Maximum Rated Values (T C =25 unless otherwise specified) V RRM Repetitive Peak Reverse Voltage 0 V I F Diode Continuous Forward Current A I FM Diode Maximum Forward Current 0 A Page 3 of 9 Rev /17/20

4 Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditions Min Typ Max Unit V FM Forward Voltage I C = A, V GE = V T J = T J = V I rr Q rr E rec Peak Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Energy I F =A, di/dt =9A/μs, V rr = 0V, V GE = -V T J = T J = 125 T J = T J = T J = T J = A µc mj R θjc Junction-To-Case( Diode Part, Per Leg) 0.74 /W Internal NTC- Thermistor Characteristic R 25 T C = kω R/R T C =100,R 100 =1481 KΩ ±3 % P 25 T C = mw B 25/50 R 2 =R 25 exp[b 25/50 (1/T 2-1/(298.K))] 3950 K B 25/80 R 2 =R 25 exp[b 25/100 (1/T 2-1/(298.K))] 4000 K Page 4 of 9 Rev /17/20

5 Module Description Min Typ Max Unit V iso Isolation Voltage(All Terminals Shorted) f = 50Hz, 1minute 2500 V T J Maximum Junction Temperature 1 T JOP Maximum Operating Junction Temperature Range T stg Storage Temperature R θcs Case-To-Sink (Conductive Grease Applied) 0.1 /W T Mounting Screw:M N m G Weight 25 g Page 5 of 9 Rev /17/20

6 0 135 VGE =V TJ = VGE =17V VGE =V VGE =13V VGE =11V VGE =9V IC(A) IC(A) VCE(V) VCE(V) Fig.1 Typical Saturation Voltage Characteristics Fig.2 Typical Output Characteristics VGE =0V TJ = VGE =0V,f =1 MHz Cies Coes 4 IF(A) C(nF) VF(V) VCE(V) E(mJ) Fig.3 Forward Characteristics of Diode (Reverse) VCC=0V,VGE=+/-V, Rg= ohm, Eoff Eon Erec E(mJ) VCC=0V,VGE=+/-V, IC=A, Eoff Eon Erec Fig.4 Capacitance Characteristics IC(A) Fig.5 Typical Switching Loss vs. Collector Current Rg( ) Fig.6 Typical Switching Loss vs. Gate Resistance Page 6 of 9 Rev /17/20

7 0 Load Current(A) Duty Cycle:50% TC =80 Rg= ohm,vge =V Frequency(KHz) IC(A) Module Chip VCES(V) ZthJC:IGBT Fig.7 Typical Load Current vs. Frequency Fig.8 Reverse Bias Safe Operation Area (RBSOA) ZthJC:Diode ZthJC(K/W) ZthJC(K/W) E T(s) Fig.9 Transient thermal impedance (IGBT) TJ = T(s) Fig.10 Transient thermal impedance (Diode) Rtyp IF(A) R( ) VF(V) Fig.11 Forward Characteristics of Diode (3-Level) TC( ) Fig.12 NTC Temperature characteristics Page 7 of 9 Rev /17/20

8 Internal Circuit: Package Outline (Unit: mm): Page 8 of 9 Rev /17/20

9 Revision History Date Revision Notes 7/17/ Initial release Global Power Technologies Group Prism Place Lake Forest, CA 926 TEL (949) FAX (949) Web site: Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, RoHS Declarations for this product can be obtained from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Page 9 of 9 Rev /17/20