< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
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1 CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm December HVM--D
2 CMHC-R MAXIMUM RATINGS Symbol Item Conditions Ratings Unit V CES Collector-emitter voltage V GE = V, T j = - + C V GE = V, T j = C V V GES Gate-emitter voltage V CE = V, T j = C ± V I C DC, T c = 9 C A Collector current I CRM Pulse (Note ) A I E DC A Emitter current (Note ) I ERM Pulse (Note ) A P tot Maximum power dissipation (Note ) T c = C, IGBT part W V iso Isolation voltage RMS, sinusoidal, f = Hz, t = min. V V e Partial discharge extinction voltage RMS, sinusoidal, f = Hz, Q PD pc V T j unction temperature ~ + C T jop Operating junction temperature ~ + C T stg Storage temperature ~ + C t psc Short circuit pulse width V CC = V, V CE V CES, V GE =V, T j = C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit T j = C. I CES Collector cutoff current V CE = V CES, V GE = V T j = C. ma T j = C. V GE(th) Gate-emitter threshold voltage V CE = V, I C = ma, T j = C... V I GES Gate leakage current V GE = V GES, V CE = V, T j = C.. µa C ies Input capacitance. nf V CE = V, V GE = V, f = khz C oes Output capacitance. nf T j = C C res Reverse transfer capacitance. nf Q G Total gate charge V CC = V, I C = A, V GE = ±V. µc V CEsat t d(on) t r E on(%) E on t d(off) t f E off(%) E off Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Turn-off switching energy (Note ) (Note ) (Note ) (Note ) (Note ) I C = A V GE = V V CC = V I C = A V GE = ± V R G(on) =. Ω L s = nh V CC = V I C = A V GE = ± V R G(off) =. Ω L s = nh T j = C. T j = C.. T j = C. T j = C. T j = C.9. T j = C.9. T j = C. T j = C.. T j = C.. T j = C. T j = C. T j = C. T j = C. T j = C.9 T j = C. T j = C. T j = C.. T j = C.. T j = C. T j = C.. T j = C.. T j = C. T j = C. T j = C. T j = C. T j = C. T j = C. V December (HVM--D)
3 CMHC-R ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions V EC t rr I rr Q rr E rec(%) E rec Emitter-collector voltage Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy Reverse recovery energy (Note ) (Note ) I E = A V GE = V (Note ) (Note ) (Note ) (Note ) (Note ) (Note ) (Note ) V CC = V I C = A V GE = ± V R G(on) =. Ω L s = nh Limits Min Typ Max T j = C. T j = C.. T j = C. T j = C. T j = C. T j = C. T j = C T j = C T j = C T j = C T j = C T j = C T j = C. T j = C. T j = C. T j = C. T j = C. T j = C. Unit V A µc THERMAL CHARACTERISTICS Limits Symbol Item Conditions Unit Min Typ Max R th(j-c)q unction to Case, IGBT part. K/kW Thermal resistance R th(j-c)d unction to Case, FWDi part. K/kW R th(c-s) Contact thermal resistance Case to heat sink, grease = W/m k, D (c-s) = m. K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit M t M : Main terminals screw.. N m M s Mounting torque M : Mounting screw.. N m M t M : Auxiliary terminals screw.. N m m Mass. kg CTI Comparative tracking index d a Clearance 9. mm d s Creepage distance. mm L P CE Parasitic stray inductance. nh R CC +EE Internal lead resistance T C = C. mω r g Internal gate resistance T C = C. Ω Note. Pulse width and repetition rate should be such that junction temperature (T j ) does not exceed T opmax rating( C).. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD i ).. unction temperature (T j ) should not exceed T jmax rating ( C).. Pulse width and repetition rate should be such as to cause negligible temperature rise.. E on(%) / E off(%) / E rec(%) are the integral of.v CE x.i C x dt.. Definition of all items is according to IEC, unless otherwise specified. December (HVM--D)
4 CMHC-R OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) Tj = C VCE = VGE V GE = 9V V GE = V V GE = V VGE = V V GE = 9V Tj = C Tj = C Collector - Emitter Voltage [V] Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD VGE = V Tj = C Tj = C Tj = C Tj = C Emitter Current [A] Tj = C Tj = C Collector-Emitter Saturation Voltage [V] Emitter-Collector Voltage [V] December (HVM--D)
5 CMHC-R CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) Cies VCE = V, IC = A Tj = C Capacitance [nf] Coes Cres Gate-Emitter Voltage [V] - VGE = V, Tj = C f = khz. Collector-Emitter Voltage [V] - - Gate Charge [µc] HALF-BRIDGE SWITCHING ENERGY HALF-BRIDGE SWITCHING ENERGY Switching Energies [/pulse] VCC = V, VGE = ±V RG(on) =.Ω, RG(off) =.Ω L S = nh, Tj = C Eon Eoff Erec Switching Energies [/pulse] VCC = V, VGE = ±V RG(on) =.Ω, RG(off) =.Ω L S = nh, Tj = C Eon Eoff Erec December (HVM--D)
6 CMHC-R HALF-BRIDGE SWITCHING ENERGY HALF-BRIDGE SWITCHING ENERGY VCC = V, IC = A VGE = ±V, L S = nh Tj = C, VCC = V, IC = A VGE = ±V, L S = nh Tj = C, Switching Energies [/pulse] Eon Erec Eoff Switching Energies [/pulse] Eon Erec Eoff Gate resistor [Ohm] Gate resistor [Ohm] HALF-BRIDGE SWITCHING TIME HALF-BRIDGE SWITCHING TIME V CC = V, V GE = ±V RG(on) =.Ω, RG(off) =.Ω L S = nh, Tj = C V CC = V, V GE = ±V R G(on) =.Ω, R G(off) =.Ω L S = nh, Tj = C Switching Times []. tf td(off) td(on) Switching Times []. tr td(off) td(on) tr tf.. December (HVM--D)
7 CMHC-R FREE-WHEEL DIODE REVERSE RECOVERY V CC = V, V GE = ±V RG(on) =.Ω, LS = nh Tj = C, FREE-WHEEL DIODE REVERSE RECOVERY V CC = V, V GE = ±V RG(on) =.Ω, LS = nh Tj = C, Reverse Recovery Time [] Irr trr Reverse Recovery Current [A] Reverse Recovery Time [] Irr trr Reverse Recovery Current [A]. Emitter Current [A]. Emitter Current [A] Normalized Transient Thermal impedance..... TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS R th(j-c)q =.K/kW Rth(j-c)D =.K/kW... Time [s] n t Z ( t ) ( ) exp i th j c Ri i R i [K/kW] : i [sec] :.... December (HVM--D)
8 CMHC-R REVERSE BIAS SAFE OPERATING AREA (RBSOA) VCC V, VGE = ±V Tj = C, RG(off) =.Ω SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) V CC V, V GE = ±V R G(on) =.Ω, R G(off) =.Ω Tj = C Collector Current [ka] Collector-Emitter Voltage [V] Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC V, di/dt < 9kA/ Tj = C Reverse Recovery Current [A] Emitter-Collector Voltage [V] December (HVM--D)
9 CMHC-R Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page ( When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the apanese export control restrictions, they must be exported under a license from the apanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of apan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. December (HVM--D) 9
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