D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

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1 MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T E773 3 D D5 D T T5 T , Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 μsec. - very low gate charge - square 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E3-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting Optimizes pin layout 11715a 11 IXYS ll rights reserved 1 -

2 MIX 11WEH Ouput Inverter T1 - T Ratings Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 5 C GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 5 collector current T C = 5 C T C = C ± ± P tot total power dissipation T C = 5 C 5 W CE(sat) collector emitter saturation voltage = 1 ; GE = 15 = 5 C GE(th) gate emitter threshold voltage = m; GE = CE = 5 C ES collector emitter leakage current CE = CES ; GE = = 5 C.3..3 m m I GES gate emitter leakage current GE = ± 5 n Q G(on) total gate charge CE = ; GE = 15 ; = 1 95 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = ; = 1 GE = ±15 ; R G = 7 Ω RBSO reverse bias safe operating area GE = ±15 ; R G = 7 Ω; CEK = 3 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current CE = 9 ; GE = ±15 ; R G = 7 Ω; non-repetitive mj mj 1 μs R thjc thermal resistance junction to case (per IGBT).5 K/W Output Inverter D1 - D Ratings Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 5 C I F5 I F forward current T C = 5 C T C = C F forward voltage I F = 1 ; GE = = 5 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = /dt = -1 /μs I F = 1 ; GE = R thjc thermal resistance junction to case (per diode). K/W T C = 5 C unless otherwise stated μc mj 11715a 11 IXYS ll rights reserved -

3 MIX 11WEH Module Ratings Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature C C C ISOL isolation voltage I ISOL < 1 m; 5/ Hz 3 ~ CTI comparative tracking index M d mounting torque (M5) 3 Nm d S d creep distance on surface strike distance through air R pin-chip resistance pin to chip.5 m R thch thermal resistance case to heatsink with heatsink compound. K/W Weight 3 g mm mm Equivalent Circuits for Simulation I Ratings R Symbol Definitio Conditio min. typ. max. Unit R IGBT T1 - T = 15 C free wheeling diode D1 - D = 15 C 1.5 R.5 T C = 5 C unless otherwise stated mω mω 11715a 11 IXYS ll rights reserved 3 -

4 MIX 11WEH Circuit Diagram 13, , D1 D D3 T1 5 T 9 1 T3 D D5 D T 7 T5 11 T Part number M = Module I = IGBT X = XPT = standard 11 = Current Rating [] W = Six-Pack = Reverse oltage [] EH = E3-Pack Outline Drawing Dimeio in mm (1 mm =.39 ) Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX11WEH MIX11WEH Box a 11 IXYS ll rights reserved -

5 MIX 11WEH Traistor T1 - T 15 GE = GE = [] = 5 C 1 [] CE [] Fig. 1 Typ. output characteristics 1 3 CE [] Fig. Typ. output characteristics = 1 CE = 1 [] = 5 C GE [] Fig. 3 Typ. tranfer characteristics GE [] Q G [nc] Fig. Typ. turn-on gate charge R G =. CE = GE = ± = 1 CE = GE = ±15 E 1 [mj] E [mj] 1 E off E off E on E on 1 [] Fig. 5 Typ. switching energy vs. collector current 1 R G [ ] Fig. Typ. switching energy vs. gate resistance 11715a 11 IXYS ll rights reserved 5 -

6 MIX 11WEH Inverter D1 - D 15 R = I F [] 1 1 Q rr [μc] 1 5 = 5 C F [] Fig. 7 Typ. Forward current versus F /dt [/μs] Fig. Typ. reverse recov.charge Q rr vs. di/dt R = R = I RM [] t rr [] /dt [/μs] Fig. 9 Typ. peak reverse current I RM vs. di/dt /dt [/μs] Fig. 1 Typ. recovery time t rr versus di/dt E rec [mj] R = /dt [/μs] Fig. 11 Typ. recovery energy E rec versus di/dt 1 Z thjc.1 IGBT FRD [K/W] R i τ i R i τ i t p [s] Fig. Typ. traient thermal impedance Diode IGBT 11715a 11 IXYS ll rights reserved -