MITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura

Transcription

1 SECURITY CODE Spec. NME Customer s Std. Spec. MITSUBISHI ELECTRIC CORP. PRELIMINRY MITSUBISHI ELECTRIC CORPORTION Prepared by S.Iura S.Iura B S.Iura Checked by H.Yamaguchi R I.Umezaki I.Umezaki E pproved by M.Yamamoto V Y.Konishi Y.Konishi DTE 17-Jan Feb Oct Type Number CM2HG-13H 2. Structure Flat base type (Insulated package, lsic base plate) 3. pplication & Customer High power converters & Inverters for traction application 4. Outline See Fig Related Specifications Fig. 1 - Outline drawing 1 / 7

2 6. Maximum Ratings Ratings V GE = V, T j = 4 C Collector-emitter voltage V CES V GE = V, T j = +25 C 63 V V GE = V, T j = +125 C Gate-emitter voltage V GES V CE = V, T j = 25 C ± 2 V 6.3 Collector current I C DC, T c = 8 C 2 I CM Pulse (note 1) 4 I E Emitter current (note 2) I EM Pulse (note 1) Maximum Collector dissipation P C T c = 25 C, IGBT part (note 3) 29 W 6.6 Isolation voltage V iso 6.7 Partial discharge Q pd Charged part to the baseplate RMS sinusoidal, 6Hz 1min. V 1 = 69 V rms, V 2 = 51 V rms 6 Hz (acc. to IEC 1287) 12 V 1 pc 6.8 Junction temperature T j 4 ~ +15 C 6.9 Storage temperature T stg 4 ~ +125 C 6.1 Operating temperature T op 4 ~ +125 C 6.11 Maximum turn-off switching current 6.12 Short circuit capability (maximum pulse width) V CC 45 V, V GE = ±15 V R G(off) 72 Ω, T j = 125 C [See Fig. 2 (a)] V CC 45 V, V GE = ±15 V R G(off) 72 Ω, T j = 125 C [See Fig. 2 (b)] 6.13 Maximum reverse recovery instantaneous power (note 2) V CC 45 V di e /dt 1 /µs, T j = 125 C [See Fig. 2 (a)] 4 1 µs 12 kw Note 1. Note 2. Note 3. Pulse width and repetition rate should be such that junction temperature (T j ) does not exceed T opmax rating (125 C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (T j ) should not exceed T jmax rating (15 C). 7. Electrical Characteristics V T j = 25 C Collector cutoff current I CE = V CES CES V GE = V T j = 125 C Gate-emitter threshold voltage V GE(th) 7.3 Gate leakage current I GES I C = 2 m, V CE = 1 V T j = 25 C V GE = V GES, V CE = V T j = 25 C m V.5 µ 2 / 7

3 7.4 Collector-emitter saturation voltage V CE(sat) 7.5 Input capacitance C ies 7.6 Output capacitance C oes 7.7 Reverse transfer capacitance C res 7.8 Total gate charge Q G 7.9 Emitter-collector voltage (note 2) V EC (note 4) I C = 2 T j = 25 C 5.1 V GE = 15 V T j = 125 C 5. V CE = 1 V, V GE = V f = 1 khz, T j = 25 C V CE = 1 V, V GE = V f = 1 khz, T j = 25 C V CE = 1 V, V GE = V f = 1 khz, T j = 25 C V CC = 36 V, I C = 2 V GE = 15 V, T j = 25 C V 41 nf 2.5 nf.7 nf 3.3 µc (note 4) I E = 2 T j = 25 C 4. V GE = V T j = 125 C Turn-on delay time t d(on) V CC = 36 V, I C = 2 V GE1 = V GE2 = 15 V 1.2 µs R G(on) = 3 Ω, T j = 125 C 7.11 Turn-on rise time t r (note 5) t off = 6 µs.35 µs Inductive load 7.12 Turn-on switching energy E on [See Fig. 2 (a), Fig. 3] 1.5 J/P V 7.13 Turn-off delay time t d(off) V CC = 36 V, I C = µs 7.14 Turn-off fall time t f1 V GE1 = V GE2 = 15 V R G(off) = 72 Ω, T j = 125 C.5 µs (note 5) t (IGBT_off) = 6 µs 7.15 Turn-off fall time t f2 Inductive load 3.3 µs 7.16 Turn-off switching energy E off [See Fig. 2 (a), Fig. 3] 1.2 J/P 7.17 Reverse recovery time (note 2) t rr1 V CC = 36 V, I E = 2 1. µs 7.18 Reverse recovery time (note 2) t rr2 di e /dt = 67 /µs T j = 125 C 2.4 µs (note 5) t off = 6 µs 7.19 Reverse recovery charge (note 2) Q rr Inductive load 37 µc 7.2 Reverse recovery energy (note 2) E rec [See Fig. 2 (a), Fig. 4].7 J/P Note 4. Note 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. t (IGBT_off) definition is shown as follows. I C time t (IGBT_off) 3 / 7

4 8. Thermal Characteristics 8.1 Thermal resistance R th(j-c)q 8.2 Thermal resistance (note 2) R th(j-c)r 8.3 Contact thermal resistance R th(c-f) Junction to case IGBT part Junction to case FWDi part (note 6) Case to fin Conductive grease applied 42. K/kW 66. K/kW 18. K/kW Note 6. Thermal conductivity is 1W/mK with a thickness of 1µm. 9. Mechanical Characteristics 9.1 Mounting torque Main terminal screw : M N m 9.2 Mounting torque Mounting screw : M N m 9.3 Mounting torque uxiliary terminal screw : M N m 9.4 Mass.52 kg 9.5 Comparative tracking index CTI Clearance 26. mm 9.7 Creepage distance 56. mm 9.8 Internal inductance L C-E(int) t.b.d nh 9.9 Internal lead resistance R C-E(int) T c = 25 C t.b.d mω 1. Shipping Inspection Report Item (note 7) Static characteristics : I CES [7.1], V GE(th) [7.2], I GES [7.3], V CE(sat) [7.4], V EC [7.9] Switching characteristics : t d(on) [7.1], t r [7.11], t d(off) [7.13], t f [7.14], Short circuit current [6.11] Note 7. One shipping inspection report with the above item values is submitted when modules are delivered. The conductions are defined in bracket. 4 / 7

5 11. Test Circuit & Definition of Switching Characteristics LS1 = 5 nh Rg DUT: diode V GE3 LS2 = 2 nh LLOD C = 1 mf V CC Rg DUT: IGBT V GE1 CS = 25 uf V GE2 Fig. 2 (a) Switching test circuit LS = 1 nh CS = 25 uf C = 1 mf V CC Rg DUT: IGBT V GE1 V GE2 Fig. 2 (b) Short circuit test circuit 5 / 7

6 IGBT part: turn-on switching IGBT part: turn-off switching 9%V GE 1%V GE V GE V CC I C 9%I C di 9%I C 5%I C 1%I C 1%V CE 1%V V CE CE dt 1%I C td(on) ton tr Eon = t2 ic vce dt t1 t1 t2 t3 t4 td(off) toff tf2 Eoff = t4 ic vce dt t3 tf1 = (.9ic.1ic) / (di/dt) Fig. 3 Definitions of switching times & energies of IGBT part Diode part: reverse recovery I E (I F ) di di/dt trr1 1%I E V EC (V R ) Qrr = Erec = t6 ie dt t6 ie vec dt t5 Irr dt 1%V EC trr2 t5 t6 Fig. 4 Definitions of reverse recovery charge & energy of FWDi part 6 / 7

7 Rev. No. B Original Summary of changes The following items changed. 7.4, 7.9, 7.12, 7.16, 7.2 The following items added. Fig.1, 6.2, 6.4, 6.5, 6.7, 6.1, 6.11, 6.12, 6.13, 7.1, 7.2, 7.3, 7.5, 7.6, 7.7, 7.1, 7.11, 7.13, 7.14, 7.15, 7.17, 7.18, 7.19, 8.3, 9, 1, 11 The following items changed. 6.13, 7.2, 7.4, 7.8, 7.9, 7.13, 7.15, 7.16, 7.19, 7.2, 8.2, 9.1, 9.3, 9.4 Signature & date S.Iura 7-Oct.-22 S.Iura 6-Feb.-24 S.Iura 28-Oct / 7