CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

Transcription

1 CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (724) Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC C2 (Cs2) G2 E2 (Es2) Tr2 Di2 E2 C2E1 C1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C 1.67± ±.25 D 5.41± ±.25 E F 2.91±.1 74.±.25 G H J 1.5±.1 38.±.25 K L / /-.5 Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N V E2 H H H H H H G G Di1 LABEL Tr1 C1 C1 (Cs1) E1 (Es1) G1 U J AA F Tolerance Otherwise Specified (mm) Division of Dimension Tolerance.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 12 ±.8 over 12 to 4 ±1.2 Dimensions Inches Millimeters M R (9 PLACES) T M.75±.8 1.9±.2 N P R M6 Metric M6 S.8 2. T U V W X Y Z AA L Description: Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverseconnected super-fasecovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heatsinking RoHS Compliant Applications: High Power DC Power Supply Large DC Motor Drives Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1DUC-34SA is a 17V (V CES ), 1 Ampere Dual IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 5) CM /13 Rev. 3 1

2 CM1DUC-34SA 1 Amperes/17 Volts Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (V GE = V) V CES 17 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (DC, T C = 125 C) *2,*4 I C 1 Amperes Collector Current (Pulse, Repetitive) *3 I CRM 2 Amperes Total Power Dissipation (T C = 25 C) *2,*4 P tot 1, Watts Emitter Current *2 I *1 E 1 Amperes Emitter Current (Pulse, Repetitive) *3 I *1 ERM 2 Amperes Isolation Voltage (Terminals to Baseplate, RMS, f = 6Hz, AC 1 minute) V isol 4 Volts Maximum Junction Temperature T j(max) 175 C Maximum Case Temperature T C (max) 125 C Operating Junction Temperature T j(op) -4 to +15 C Storage Temperature T stg -4 to +125 C *1 Represenatings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the righor chip location. The heatsink thermal resistance should be measured just under the chips Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 2 3/13 Rev. 3

3 CM1DUC-34SA 1 Amperes/17 Volts Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current I CES V CE = V CES, V GE = V 1. ma Gate-Emitter Leakage Current I GES V GE = V GES, V CE = V 1 µa Gate-Emitter Threshold Voltage V GE(th) I C = 1mA, V CE = 1V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 1A, V GE = 15V, * Volts (Terminal = Chip) I C = 1A, V GE = 15V, *5 2.1 Volts I C = 1A, V GE = 15V, T j = 15 C * Volts Input Capacitance C ies 26 nf Output Capacitance C oes V CE = 1V, V GE = V 27 nf Reverse Transfer Capacitance C res 5 nf Gate Charge Q G V CC = 1V, I C = 1A, V GE = 15V 47 nc Turn-on Delay Time 9 ns Rise Time V CC = 1V, I C = 1A,, 35 ns Turn-off Delay Time R G = 2.Ω, 125 ns Fall Time 4 ns Emitter-Collector Voltage V *1 EC I E = 1A, V GE = V, * Volts (Terminal = Chip) I E = 1A, V GE = V, *5 2.8 Volts I E = 1A, V GE = V, T j = 15 C *5 2.6 Volts Reverse Recovery Time t *1 rr V CC = 1V, I E = 9A, 4 ns Reverse Recovery Charge Q *1 rr R G = 2.Ω, 27 µc Turn-on Switching Energy per Pulse V CC = 1V, I C = I E = 1A, 239 mj Turn-off Switching Energy per Pulse, R G = 2.Ω, T j = 15 C, 269 mj Reverse Recovery Energy per Pulse E *1 rr 13 mj Internal Lead Resistance R CC' + EE' Main Terminals-Chip,.286 mω Per Switch,T C = 25 C *4 Internal Gate Resistance r g Per Switch.56 Ω *1 Represenatings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the righor chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 3/13 Rev. 3 3

4 CM1DUC-34SA 1 Amperes/17 Volts Electrical Characteristics, unless otherwise specified (continued) Thermal Resistance Characteristics Thermal Resistance, Junction to Case *4 R th(j-c) Q Per IGBT 15 K/kW Thermal Resistance, Junction to Case *4 R th(j-c) D Per Diode 24 K/kW Contact Thermal Resistance, R th(c-f) Thermal Grease Applied 6 K/kW Case to Heatsink (Per 1 Module) *6 Mechanical Characteristics Mounting Torque M t Main Terminals, M6 Screw in-lb M s Mounting to Heatsink, M6 Screw in-lb Creepage Distance d s Terminal to Terminal 24 mm Terminal to Baseplate 33 mm Clearance d a Terminal to Terminal 14 mm Terminal to Baseplate 33 mm Weight m 145 Grams Flatness of Baseplate e c On Centerline X, Y * µm Recommended Operating Conditons, T a = 25 C (DC) Supply Voltage V CC Applied Across C1-E Volts Gate-Emitter Drive Voltage V GE(on) Applied Across G1-Es1/G2-Es Volts External Gate Resistance R G Per Switch Ω *4 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the righor chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below mm 39 mm CONVEX CONCAVE Y1 Y X 51.7 BOTTOM BOTTOM BOTTOM CONCAVE + CONVEX Tr1, Tr2: IGBT, Di1, Di2: FWDi Each mark points to the center position of each chip. 4 3/13 Rev. 3

5 CM1DUC-34SA 1 Amperes/17 Volts COLLECTOR CURRENT, I C, (AMPERES) OUTPUT CHARACTERISTICS V GE = 2V VOLTAGE, V CE, (VOLTS) SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS 4.5 V GE = 15V T j = 15 C SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 SATURATION VOLTAGE CHARACTERISTICS I C = 2A I C = 1A I C = 6A GATE-EMITTER VOLTAGE, V GE, (VOLTS) 1 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS CAPACITANCE VS. V CE 1 4 HALF-BRIDGE SWITCHING CHARACTERISTICS 1 2 V GE = 15V T j = 15 C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) C ies C oes C res V CC = 1V R G = 2.Ω V GE = V VOLTAGE, V CE, (VOLTS) 1 2 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME VS. GATE RESISTANCE SWITCHING TIME VS. GATE RESISTANCE V CC = 1V 1 1 R G = 2.Ω T j = 15 C V CC = 1V I C = 1A EXTERNAL GATE RESISTANCE, R G, (Ω) 1 4 V CC = 1V I C = 1A T j = 15 C EXTERNAL GATE RESISTANCE, R G, (Ω) 1 1 3/13 Rev. 3 5

6 CM1DUC-34SA 1 Amperes/17 Volts REVERSE RECOVERY, I rr (A), r (ns) REVERSE RECOVERY CHARACTERISTICS V CC = 1V R G = 2.Ω I rr r REVERSE RECOVERY, I rr (A), r (ns) REVERSE RECOVERY CHARACTERISTICS V CC = 1V R G = 2.Ω T j = 15 C I rr r GATE-EMITTER VOLTAGE, V GE, (VOLTS) I C = 1A V CC = 1V GATE CHARGE VS. V GE GATE CHARGE, Q G, (nc) 1 2 HALF-BRIDGE SWITCHING CHARACTERISTICS V CC = 1V R G = 2.Ω 1 2 HALF-BRIDGE SWITCHING CHARACTERISTICS V CC = 1V R G = 2.Ω T j = 15 C 1 2 HALF-BRIDGE SWITCHING CHARACTERISTICS V CC = 1V I C /I E = 1A V CC = 1V I C /I E = 1A T j = 15 C GATE RESISTANCE, R G, (Ω) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single Pulse T C = 25 C Per Unit Base = R th(j-c) = 15 K/kW (IGBT) R th(j-c) = 24 K/kW (FWDi) TIME, (s) GATE RESISTANCE, R G, (Ω) 6 3/13 Rev. 3